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    • 1. 发明授权
    • Imaging apparatus
    • 成像设备
    • US08040402B2
    • 2011-10-18
    • US12317643
    • 2008-12-23
    • Shinya IshibashiToshihisa Maeda
    • Shinya IshibashiToshihisa Maeda
    • H04N5/217
    • H04N5/361
    • An imaging apparatus includes: an imaging device including first and second pixels; imaging control means for carrying out a first imaging action and a second imaging action; storage means for storing first image data acquired from the first pixels in the first imaging action and second image data acquired from the first pixels in the second imaging action; noise data acquisition means for acquiring first noise data based on pixel signals produced in the second pixels in the first imaging action and acquiring second noise data based on pixel signals produced in the second pixels in the second imaging action; noise estimation means for estimating a noise component in the first image data using the second image data and a noise ratio of the noise in an exposure period to the noise in a non-exposure period; and noise correction means for removing the noise component from the first image data.
    • 一种成像装置包括:成像装置,包括第一和第二像素; 成像控制装置,用于执行第一成像动作和第二成像动作; 存储装置,用于存储从第一成像动作中的第一像素获取的第一图像数据和从第二成像动作中的第一像素取得的第二图像数据; 噪声数据获取装置,用于基于第一成像动作中的第二像素中产生的像素信号获取第一噪声数据,并且基于第二成像动作中的第二像素产生的像素信号获取第二噪声数据; 噪声估计装置,用于使用第二图像数据估计第一图像数据中的噪声分量,以及在非曝光时段中的曝​​光周期中的噪声与噪声的噪声比; 以及用于从第一图像数据中去除噪声分量的噪声校正装置。
    • 3. 发明授权
    • Single crystal SiC
    • 单晶SiC
    • US06376900B1
    • 2002-04-23
    • US09497799
    • 2000-02-04
    • Yoshimitsu YamadaKichiya TaninoToshihisa Maeda
    • Yoshimitsu YamadaKichiya TaninoToshihisa Maeda
    • H01L2358
    • C30B1/00C30B29/36Y10S438/931
    • In single crystal SiC 1, growing single crystal SiC 3 is integrally formed on a surface of a single crystal hexagonal (6H type) &agr;-SiC substrate 2 used as a seed crystal. The number of micropipes 4A of the growing single crystal SiC 3 is less than that of the micropipes 4B of the single crystal &agr;-SiC substrate 2, and the thickness t3 thereof is less than the thickness t2 of the single crystal &agr;-SiC substrate 2, thereby making it possible to obtain the high quality-single crystal SiC wherein the number of the micropipes per unit area is less, thereby decreasing the distortion in the neighborhood of the micropipes. This can provide the high-quality single crystal SiC which can be practically used as a substrate wafer for fabricating a semiconductor device.
    • 在单晶SiC 1中,生长的单晶SiC 3一体地形成在用作晶种的单晶六方晶(6H型)α-SiC衬底2的表面上。 生长的单晶SiC 3的微管4A的数量小于单晶α-SiC衬底2的微管4B的数量,其厚度t3小于单晶α-SiC衬底2的厚度t2 ,从而可以获得每单位面积的微管数较少的高质量单晶SiC,从而减小微管附近的变形。 这可以提供可实际用作制造半导体器件的衬底晶片的高质量单晶SiC。
    • 5. 发明申请
    • Image capturing apparatus and image capturing method
    • 图像捕获装置和图像捕获方法
    • US20060077277A1
    • 2006-04-13
    • US11055443
    • 2005-02-10
    • Ryuichi KitaokaToshihisa Maeda
    • Ryuichi KitaokaToshihisa Maeda
    • H04N3/14
    • H04N5/3592
    • An image capturing apparatus includes an image sensor such as a CCD, and a timing generator for outputting electronic shutter pulse signals (SUB pulse signals) which are used for changing a potential of an overflow drain (OFD) in the image sensor. The timing generator outputs normal SUB pulses to the image sensor during live view display and outputs inverted SUB pulses obtained by inverting a phase of the normal SUB pulses to the image sensor during a time period from a time when an instruction for photographing is given (S2 state is established) to a time when exposure is started. As a result, charges can be released from the OFD for a relatively long time before exposure for photographing, so that blooming can be satisfactorily suppressed with a simple circuit configuration.
    • 包括诸如CCD的图像传感器的图像捕获设备和用于输出用于改变图像传感器中的溢出漏极(OFD)的电位的电子快门脉冲信号(SUB脉冲信号)的定时发生器。 定时发生器在实时取景显示期间向图像传感器输出正常的SUB脉冲,并且在从给定拍摄指令的时间(S2)开始的时间段内输出通过将正常SUB脉冲的相位反相到图像传感器而获得的反相SUB脉冲 状态建立)到开始曝光的时间。 结果,在曝光曝光之前相对较长时间的OFD可以释放电荷,因此可以通过简单的电路结构令人满意地抑制起霜。