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1. 发明授权

US09200210B2 Method for stopping operation of reactor 有权
标题翻译：停止反应器运行的方法
公开(公告)号：US09200210B2
公开(公告)日：2015-12-01
申请号：US14007473
申请日：2012-03-15
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： C07C27/00 , C10G3/00 , C10G2/00
CPC分类号： C10G3/60 , C10G2/33 , C10G2/342 , C10G2300/4031 , Y02P30/20
摘要： The method for stopping operation of a reactor is provided with a stop step of stopping supply of a synthesis gas containing a carbon monoxide gas and a hydrogen gas into the reactor; a slurry discharge step of discharging slurry from the reactor; a steam supply step of supplying steam higher in temperature than the decomposition temperatures of metal carbonyls into the reactor, thereby discharging gaseous matters inside the reactor; and a carbon monoxide gas detecting step of detecting an amount of carbon monoxide gas contained in the gaseous matters discharged from the reactor. In the steam supply step, supply of the steam is stopped when an amount of the detected carbon monoxide gas continuously declines to be lower than a predetermined reference value.
摘要翻译：停止反应器运转的方法具有停止向反应器供给包含一氧化碳气体和氢气的合成气的停止步骤; 从反应器排出浆料的浆料排出步骤; 蒸汽供给步骤，将比金属羰基化物的分解温度更高的蒸气供给到反应器中，从而将反应器内的气态物质排出; 以及一氧化碳气体检测步骤，检测从反应器排出的气态物质中所含的一氧化碳气体的量。在蒸汽供给步骤中，当检测到的一氧化碳气体的量持续下降到低于预定的参考值时，停止供给蒸汽。

2. 发明申请

US20090179300A1 Trench Sidewall Protection by a Carbon-Rich Layer in a Semiconductor Device 失效
标题翻译：半导体器件中富碳层的沟槽侧壁保护
公开(公告)号：US20090179300A1
公开(公告)日：2009-07-16
申请号：US12013683
申请日：2008-01-14
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： H01L21/76 , H01L23/48
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76831 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： When forming a trench in a porous low-K dielectric (such as an ILD) of a semiconductor device, a carbon-rich layer is formed in the sidewalls of the trench during trench etching. This carbon-rich layer may protect the trench from being excessively etched, which would otherwise form an undesirable hardmask undercut. The carbon-rich layer may be formed simultaneously with and during the etching process, by increasing the amount of carbon available to be absorbed by the ILD during the trench etching process. The existence of the extra available carbon may slow the etching of the carbon-enriched regions of the dielectric.
摘要翻译：当在半导体器件的多孔低K电介质（例如ILD）中形成沟槽时，在沟槽蚀刻期间在沟槽的侧壁中形成富碳层。该富碳层可以保护沟槽不被过度蚀刻，否则会形成不需要的硬掩模底切。可以通过增加在沟槽蚀刻工艺期间由ILD吸收的碳的量，同时和在蚀刻过程期间形成富碳层。额外可用的碳的存在可能减慢电介质的富碳区域的蚀刻。

3. 发明申请

US20080286961A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20080286961A1
公开(公告)日：2008-11-20
申请号：US12122015
申请日：2008-05-16
申请人： Shinya Arai , Akihiro Kojima
发明人： Shinya Arai , Akihiro Kojima
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/31144 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method includes: forming a via pattern in an insulating film by use of an alignment mark of a lower wiring line; forming, by use of an alignment mark of the via pattern, an upper wiring groove pattern in an upper insulating film in which the via pattern is embedded; and repeating etching in a self-aligning manner to form a via and a wiring groove in an insulating film previously stacked under the insulating film in which the via pattern has been formed.
摘要翻译：半导体器件制造方法包括：通过使用下布线的对准标记在绝缘膜中形成通孔图案; 通过所述通孔图案的对准标记形成在嵌入所述通孔图案的上绝缘膜中的上布线槽图案; 并且以自对准方式重复蚀刻，以在预先堆叠在已经形成通孔图案的绝缘膜下方的绝缘膜中形成通孔和布线槽。

4. 发明申请

US20140014089A1 TEMPERATURE CONTROL SYSTEM, HYDROCARBON SYNTHESIS REACTION APPARATUS, HYDROCARBON SYNTHESIS REACTION SYSTEM, AND TEMPERATURE CONTROL PROCESS 有权
标题翻译：温度控制系统，烃合成反应装置，烃合成反应系统和温度控制过程
公开(公告)号：US20140014089A1
公开(公告)日：2014-01-16
申请号：US14007069
申请日：2012-03-15
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： C10G3/00
CPC分类号： C10G3/60 , B01J8/001 , B01J19/0013 , B01J2219/00063 , B01J2219/00065 , B01J2219/00083 , B01J2219/00162 , B01J2219/002 , B01J2219/00238 , C10G2/33 , C10G2/34 , F01K13/00 , F22B1/1838 , F28D2021/0077 , Y02P30/20
摘要： The temperature control system is provided with a lower heat removing unit which is disposed at the bottom of a reactor inside which an exothermic reaction takes place and through which a liquid coolant is flowed, and an upper heat removing unit which is disposed in the reactor further above from the lower heat removing unit and through which the liquid coolant is flowed, recovering reaction heat inside the reactor and controlling a temperature inside the reactor. The lower heat removing unit is supplied with the liquid coolant which is adjusted for temperature by a first temperature adjustment unit, and the upper heat removing unit is supplied with the liquid coolant which is adjusted for temperature by a second temperature adjustment unit different from the first temperature adjustment unit.
摘要翻译：温度控制系统设置有下部除热单元，其设置在其内发生放热反应的反应器的底部，并且液体冷却剂流过该反应器，以及设置在反应器中的上部除热单元从下部除热单元向上方流动，液体冷却剂流过该回路，回收反应器内的反应热并控制反应器内的温度。向下部散热单元供给通过第一温度调节单元调节温度的液体冷却剂，并且向上部除热单元供给通过与第一温度调节单元不同的第二温度调节单元调节温度的液体冷却剂温度调节单元。

5. 发明申请

US20120148652A1 METHOD FOR INCORPORATING MEDICINE INTO A PLANT 审中-公开
标题翻译：将药物并入植物的方法
公开(公告)号：US20120148652A1
公开(公告)日：2012-06-14
申请号：US13391459
申请日：2010-08-20
申请人： Masanaga Yamaguchi , Shinya Arai , Atsushi Sato
发明人： Masanaga Yamaguchi , Shinya Arai , Atsushi Sato
IPC分类号： A01N25/08 , A01N25/04 , A01P7/04 , B82Y5/00
CPC分类号： A01N25/04 , A01N25/00 , A01N25/18 , A01N25/30 , A01N27/00 , A01N53/00 , A01N65/18
摘要： A method of allowing a chemical agent to absorb into a plant body, comprising a step of obtaining a dispersion which disperses aggregates in an aqueous solvent, in which the aggregate has a particle size of 100 nm or less and comprises a chemical agent contained within an amphiphilic substance; and a step of bringing the dispersion obtained in step (1) into contact with at least part of a plant body to thereby allow the aggregates to absorb into the plant body.
摘要翻译：一种允许化学试剂吸收到植物体内的方法，包括获得将聚集体分散在水性溶剂中的分散体的步骤，其中聚集体的粒径为100nm以下，并且包含在两亲物质以及使步骤（1）中得到的分散体与植物体的至少一部分接触从而允许聚集体吸收到植物体内的步骤。

6. 发明授权

US09441165B2 Temperature control system, hydrocarbon synthesis reaction apparatus, hydrocarbon synthesis reaction system, and temperature control process 有权
标题翻译：温度控制系统，烃合成反应装置，烃合成反应系统和温度控制过程
公开(公告)号：US09441165B2
公开(公告)日：2016-09-13
申请号：US14007069
申请日：2012-03-15
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： B01J8/00 , B01J19/00 , B01J19/24 , C10G2/00 , C10G3/00 , F22B1/18 , F01K13/00 , F22B1/00 , F28D21/00
CPC分类号： C10G3/60 , B01J8/001 , B01J19/0013 , B01J2219/00063 , B01J2219/00065 , B01J2219/00083 , B01J2219/00162 , B01J2219/002 , B01J2219/00238 , C10G2/33 , C10G2/34 , F01K13/00 , F22B1/1838 , F28D2021/0077 , Y02P30/20
摘要： The temperature control system is provided with a lower heat removing unit which is disposed at the bottom of a reactor inside which an exothermic reaction takes place and through which a liquid coolant is flowed, and an upper heat removing unit which is disposed in the reactor further above from the lower heat removing unit and through which the liquid coolant is flowed, recovering reaction heat inside the reactor and controlling a temperature inside the reactor. The lower heat removing unit is supplied with the liquid coolant which is adjusted for temperature by a first temperature adjustment unit, and the upper heat removing unit is supplied with the liquid coolant which is adjusted for temperature by a second temperature adjustment unit different from the first temperature adjustment unit.
摘要翻译：温度控制系统设置有下部除热单元，其设置在其内发生放热反应的反应器的底部，并且液体冷却剂流过该反应器，以及设置在反应器中的上部除热单元从下部除热单元向上方流动，液体冷却剂流过该回路，回收反应器内的反应热并控制反应器内的温度。向下部散热单元供给通过第一温度调节单元调节温度的液体冷却剂，并且向上部除热单元供给通过与第一温度调节单元不同的第二温度调节单元调节温度的液体冷却剂温度调节单元。

7. 发明授权

US09196494B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09196494B2
公开(公告)日：2015-11-24
申请号：US13590311
申请日：2012-08-21
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： H01L21/8239 , H01L27/108 , H01L21/28 , H01L27/115 , H01L21/762
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/10873 , H01L27/10891 , H01L27/10894 , H01L27/11521
摘要： In one embodiment, a semiconductor device includes a semiconductor substrate, isolation regions disposed in the semiconductor substrate, and device regions disposed between the isolation regions in the semiconductor substrate. The device further includes a first line disposed on the device regions and the isolation regions, a line width of the first line on the isolation regions being larger than a line width of the first line on the device regions.
摘要翻译：在一个实施例中，半导体器件包括半导体衬底，设置在半导体衬底中的隔离区和设置在半导体衬底中的隔离区之间的器件区。该装置还包括设置在器件区域和隔离区域上的第一线，隔离区域上的第一线的线宽大于器件区域上第一条线的线宽。

8. 发明申请

US20150011662A1 HYDROCARBON PRODUCTION APPARATUS AND HYDROCARBON PRODUCTION PROCESS 有权
标题翻译：石油生产设备和油气生产过程
公开(公告)号：US20150011662A1
公开(公告)日：2015-01-08
申请号：US14004954
申请日：2012-03-13
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： B01J8/08 , C07C1/02
CPC分类号： B01J8/08 , B01J2208/00796 , C07C1/02 , C10G2/00 , C10G2300/1022 , C10G2300/304 , C10G2300/4031
摘要： The hydrocarbon production apparatus is provided with a gas-liquid separator for cooling gaseous state hydrocarbons drawn out from a gas phase portion of a reactor for the Fischer-Tropsch synthesis reaction and liquefying a portion of the hydrocarbons. A light liquid hydrocarbon supply line for supplying light hydrocarbons is disposed between a downstream side line which is downstream from the last stage of a gas-liquid separating unit of the gas-liquid separator, and an upstream side line which is upstream from the last stage of the gas-liquid separating unit of the gas-liquid separator, wherein the downstream side line is a liquid hydrocarbon line on the downstream side through which the light hydrocarbons having cloud points lower than the temperature at an outlet of a cooler in the last stage of the gas-liquid separating unit are flowed.
摘要翻译：烃制造装置设置有用于冷却从费 - 托合成反应的反应器的气相部分抽出的气态烃并液化一部分烃的气液分离器。用于供给轻质烃的轻液态碳氢化合物供给管路配置在气液分离器的气液分离装置的最后级的下游侧的下游侧管线和最后级的上游侧的上游侧管线气液分离器的气液分离单元，其中下游侧线是下游侧的液体碳氢化合物管线，其中浊点低于最后阶段的冷却器出口处的温度的气液分离装置。

9. 发明申请

US20140011896A1 METHOD FOR STOPPING OPERATION OF REACTOR 有权
标题翻译：停止反应器运行的方法
公开(公告)号：US20140011896A1
公开(公告)日：2014-01-09
申请号：US14007473
申请日：2012-03-15
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： C10G3/00
CPC分类号： C10G3/60 , C10G2/33 , C10G2/342 , C10G2300/4031 , Y02P30/20
摘要： The method for stopping operation of a reactor is provided with a stop step of stopping supply of a synthesis gas containing a carbon monoxide gas and a hydrogen gas into the reactor; a slurry discharge step of discharging slurry from the reactor; a steam supply step of supplying steam higher in temperature than the decomposition temperatures of metal carbonyls into the reactor, thereby discharging gaseous matters inside the reactor; and a carbon monoxide gas detecting step of detecting an amount of carbon monoxide gas contained in the gaseous matters discharged from the reactor. In the steam supply step, supply of the steam is stopped when an amount of the detected carbon monoxide gas continuously declines to be lower than a predetermined reference value.
摘要翻译：停止反应器运转的方法具有停止向反应器供给包含一氧化碳气体和氢气的合成气的停止步骤; 从反应器排出浆料的浆料排出步骤; 蒸汽供给步骤，将比金属羰基化物的分解温度更高的蒸气供给到反应器中，从而将反应器内的气态物质排出; 以及一氧化碳气体检测步骤，检测从反应器排出的气态物质中所含的一氧化碳气体的量。在蒸汽供给步骤中，当检测到的一氧化碳气体的量持续下降到低于预定的参考值时，停止供给蒸汽。

10. 发明授权

US08018023B2 Trench sidewall protection by a carbon-rich layer in a semiconductor device 失效
标题翻译：通过半导体器件中的富碳层进行沟槽侧壁保护
公开(公告)号：US08018023B2
公开(公告)日：2011-09-13
申请号：US12013683
申请日：2008-01-14
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： H01L29/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76831 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： When forming a trench in a porous low-K dielectric (such as an ILD) of a semiconductor device, a carbon-rich layer is formed in the sidewalls of the trench during trench etching. This carbon-rich layer may protect the trench from being excessively etched, which would otherwise form an undesirable hardmask undercut. The carbon-rich layer may be formed simultaneously with and during the etching process, by increasing the amount of carbon available to be absorbed by the ILD during the trench etching process. The existence of the extra available carbon may slow the etching of the carbon-enriched regions of the dielectric.
摘要翻译：当在半导体器件的多孔低K电介质（例如ILD）中形成沟槽时，在沟槽蚀刻期间在沟槽的侧壁中形成富碳层。该富碳层可以保护沟槽不被过度蚀刻，否则会形成不需要的硬掩模底切。可以通过增加在沟槽蚀刻工艺期间由ILD吸收的碳的量，同时和在蚀刻过程期间形成富碳层。额外可用的碳的存在可能减慢电介质的富碳区域的蚀刻。

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