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1. 发明申请

US20140014089A1 TEMPERATURE CONTROL SYSTEM, HYDROCARBON SYNTHESIS REACTION APPARATUS, HYDROCARBON SYNTHESIS REACTION SYSTEM, AND TEMPERATURE CONTROL PROCESS 有权
标题翻译：温度控制系统，烃合成反应装置，烃合成反应系统和温度控制过程
公开(公告)号：US20140014089A1
公开(公告)日：2014-01-16
申请号：US14007069
申请日：2012-03-15
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： C10G3/00
CPC分类号： C10G3/60 , B01J8/001 , B01J19/0013 , B01J2219/00063 , B01J2219/00065 , B01J2219/00083 , B01J2219/00162 , B01J2219/002 , B01J2219/00238 , C10G2/33 , C10G2/34 , F01K13/00 , F22B1/1838 , F28D2021/0077 , Y02P30/20
摘要： The temperature control system is provided with a lower heat removing unit which is disposed at the bottom of a reactor inside which an exothermic reaction takes place and through which a liquid coolant is flowed, and an upper heat removing unit which is disposed in the reactor further above from the lower heat removing unit and through which the liquid coolant is flowed, recovering reaction heat inside the reactor and controlling a temperature inside the reactor. The lower heat removing unit is supplied with the liquid coolant which is adjusted for temperature by a first temperature adjustment unit, and the upper heat removing unit is supplied with the liquid coolant which is adjusted for temperature by a second temperature adjustment unit different from the first temperature adjustment unit.
摘要翻译：温度控制系统设置有下部除热单元，其设置在其内发生放热反应的反应器的底部，并且液体冷却剂流过该反应器，以及设置在反应器中的上部除热单元从下部除热单元向上方流动，液体冷却剂流过该回路，回收反应器内的反应热并控制反应器内的温度。向下部散热单元供给通过第一温度调节单元调节温度的液体冷却剂，并且向上部除热单元供给通过与第一温度调节单元不同的第二温度调节单元调节温度的液体冷却剂温度调节单元。

2. 发明申请

US20130228892A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130228892A1
公开(公告)日：2013-09-05
申请号：US13590311
申请日：2012-08-21
申请人： Shinya ARAI
发明人： Shinya ARAI
IPC分类号： H01L27/04 , H01L21/76
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/10873 , H01L27/10891 , H01L27/10894 , H01L27/11521
摘要： In one embodiment, a semiconductor device includes a semiconductor substrate, isolation regions disposed in the semiconductor substrate, and device regions disposed between the isolation regions in the semiconductor substrate. The device further includes a first line disposed on the device regions and the isolation regions, a line width of the first line on the isolation regions being larger than a line width of the first line on the device regions.
摘要翻译：在一个实施例中，半导体器件包括半导体衬底，设置在半导体衬底中的隔离区和设置在半导体衬底中的隔离区之间的器件区。该装置还包括设置在器件区域和隔离区域上的第一线，隔离区域上的第一线的线宽大于器件区域上第一条线的线宽。

3. 发明申请

US20120148652A1 METHOD FOR INCORPORATING MEDICINE INTO A PLANT 审中-公开
标题翻译：将药物并入植物的方法
公开(公告)号：US20120148652A1
公开(公告)日：2012-06-14
申请号：US13391459
申请日：2010-08-20
申请人： Masanaga Yamaguchi , Shinya Arai , Atsushi Sato
发明人： Masanaga Yamaguchi , Shinya Arai , Atsushi Sato
IPC分类号： A01N25/08 , A01N25/04 , A01P7/04 , B82Y5/00
CPC分类号： A01N25/04 , A01N25/00 , A01N25/18 , A01N25/30 , A01N27/00 , A01N53/00 , A01N65/18
摘要： A method of allowing a chemical agent to absorb into a plant body, comprising a step of obtaining a dispersion which disperses aggregates in an aqueous solvent, in which the aggregate has a particle size of 100 nm or less and comprises a chemical agent contained within an amphiphilic substance; and a step of bringing the dispersion obtained in step (1) into contact with at least part of a plant body to thereby allow the aggregates to absorb into the plant body.
摘要翻译：一种允许化学试剂吸收到植物体内的方法，包括获得将聚集体分散在水性溶剂中的分散体的步骤，其中聚集体的粒径为100nm以下，并且包含在两亲物质以及使步骤（1）中得到的分散体与植物体的至少一部分接触从而允许聚集体吸收到植物体内的步骤。

4. 发明申请

US20100181682A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100181682A1
公开(公告)日：2010-07-22
申请号：US12563934
申请日：2009-09-21
申请人： Shinya ARAI
发明人： Shinya ARAI
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/02126 , H01L21/02164 , H01L21/3105 , H01L21/31144 , H01L21/76829 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes forming an insulating film of a material having a low relative dielectric constant on a substrate, forming an SiOCH film on the insulating film in a chamber, forming an SiO2 film continuously on the SiOCH film by reducing a carbon concentration therein in the chamber in which plasma is being generated, performing a plasma etching on the insulating film by using the SiOCH film and the SiO2 film as a hardmask layer, to form a trench in the insulating film, and performing wet etching on a surface of the trench formed in the insulating film, to remove a layer damaged by the plasma etching and process residues.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成具有低相对介电常数的材料的绝缘膜，在室中的绝缘膜上形成SiOCH膜，通过减少SiOCH膜在SiOCH膜上连续形成SiO 2膜在其中产生等离子体的腔室中的碳浓度，通过使用SiOCH膜和SiO 2膜作为硬掩模层对绝缘膜进行等离子体蚀刻，以在绝缘膜中形成沟槽，并且在在绝缘膜中形成的沟槽的表面，以去除由等离子体蚀刻和工艺残留物损坏的层。

5. 发明授权

US09421509B2 Hydrocarbon production apparatus and hydrocarbon production process 有权
标题翻译：烃生产设备和碳氢化合物生产过程
公开(公告)号：US09421509B2
公开(公告)日：2016-08-23
申请号：US14004954
申请日：2012-03-13
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： B01J8/00 , B01J8/08 , B01J19/00 , B01J19/24 , C10G2/00 , C07C1/00 , C07C1/02
CPC分类号： B01J8/08 , B01J2208/00796 , C07C1/02 , C10G2/00 , C10G2300/1022 , C10G2300/304 , C10G2300/4031
摘要： The hydrocarbon production apparatus is provided with a gas-liquid separator for cooling gaseous state hydrocarbons drawn out from a gas phase portion of a reactor for the Fischer-Tropsch synthesis reaction and liquefying a portion of the hydrocarbons. A light liquid hydrocarbon supply line for supplying light hydrocarbons is disposed between a downstream side line which is downstream from the last stage of a gas-liquid separating unit of the gas-liquid separator, and an upstream side line which is upstream from the last stage of the gas-liquid separating unit of the gas-liquid separator, wherein the downstream side line is a liquid hydrocarbon line on the downstream side through which the light hydrocarbons having cloud points lower than the temperature at an outlet of a cooler in the last stage of the gas-liquid separating unit are flowed.
摘要翻译：烃制造装置设置有用于冷却从费 - 托合成反应的反应器的气相部分抽出的气态烃并液化一部分烃的气液分离器。用于供给轻质烃的轻液态碳氢化合物供给管路配置在气液分离器的气液分离装置的最后级的下游侧的下游侧管线和最后级的上游侧的上游侧管线气液分离器的气液分离单元，其中下游侧线是下游侧的液体碳氢化合物管线，其中浊点低于最后阶段的冷却器出口处的温度的气液分离装置。

6. 发明授权

US08378488B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08378488B2
公开(公告)日：2013-02-19
申请号：US12512265
申请日：2009-07-30
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76867 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has an interlayer insulating film that is formed on a semiconductor substrate and has a trench formed therein; a first diffusion barrier film formed on an inner surface of the trench; a Cu wiring layer buried in the trench with the first diffusion barrier film interposed between the Cu wiring layer and the inner surface of the trench; a second diffusion barrier film formed on top of the interlayer insulating film and the Cu wiring layer; an alloy layer primarily containing Cu formed at a first interface between the Cu wiring layer and the second diffusion barrier film; a first reaction layer that is formed at a second interface between the interlayer insulating film and the second diffusion barrier film; and a second reaction layer that is formed on the alloy layer and the first reaction layer.
摘要翻译：半导体器件具有层间绝缘膜，其形成在半导体衬底上并形成有沟槽; 形成在所述沟槽的内表面上的第一扩散阻挡膜; 埋设在沟槽中的Cu布线层，其中第一扩散阻挡膜置于Cu布线层和沟槽的内表面之间; 形成在所述层间绝缘膜和所述Cu布线层的顶部上的第二扩散阻挡膜; 在Cu配线层和第二扩散阻挡膜之间的第一界面形成有主要含有Cu的合金层; 第一反应层，形成在所述层间绝缘膜和所述第二扩散阻挡膜之间的第二界面处; 以及形成在合金层和第一反应层上的第二反应层。

7. 发明申请

US20120126414A1 Semiconductor Device and Manufacturing Method Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120126414A1
公开(公告)日：2012-05-24
申请号：US13363253
申请日：2012-01-31
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： H01L23/48
CPC分类号： H01L21/76802 , H01L21/02126 , H01L21/02164 , H01L21/3105 , H01L21/31144 , H01L21/76829 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes forming an insulating film of a material having a low relative dielectric constant on a substrate, forming an SiOCH film on the insulating film in a chamber, forming an SiO2 film continuously on the SiOCH film by reducing a carbon concentration therein in the chamber in which plasma is being generated, performing a plasma etching on the insulating film by using the SiOCH film and the SiO2 film as a hardmask layer, to form a trench in the insulating film, and performing wet etching on a surface of the trench formed in the insulating film, to remove a layer damaged by the plasma etching and process residues.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成具有低相对介电常数的材料的绝缘膜，在室中的绝缘膜上形成SiOCH膜，通过减少SiOCH膜在SiOCH膜上连续形成SiO 2膜在其中产生等离子体的腔室中的碳浓度，通过使用SiOCH膜和SiO 2膜作为硬掩模层对绝缘膜进行等离子体蚀刻，以在绝缘膜中形成沟槽，并且在在绝缘膜中形成的沟槽的表面，以去除由等离子体蚀刻和工艺残留物损坏的层。

8. 发明授权

US08129254B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08129254B2
公开(公告)日：2012-03-06
申请号：US12563934
申请日：2009-09-21
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： H01L21/76
CPC分类号： H01L21/76802 , H01L21/02126 , H01L21/02164 , H01L21/3105 , H01L21/31144 , H01L21/76829 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, includes forming an insulating film of a material having a low relative dielectric constant on a substrate, forming an SiOCH film on the insulating film in a chamber, forming an SiO2 film continuously on the SiOCH film by reducing a carbon concentration therein in the chamber in which plasma is being generated, performing a plasma etching on the insulating film by using the SiOCH film and the SiO2 film as a hardmask layer, to form a trench in the insulating film, and performing wet etching on a surface of the trench formed in the insulating film, to remove a layer damaged by the plasma etching and process residues.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成具有低相对介电常数的材料的绝缘膜，在室中的绝缘膜上形成SiOCH膜，通过减少SiOCH膜在SiOCH膜上连续形成SiO 2膜在其中产生等离子体的腔室中的碳浓度，通过使用SiOCH膜和SiO 2膜作为硬掩模层对绝缘膜进行等离子体蚀刻，以在绝缘膜中形成沟槽，并且在在绝缘膜中形成的沟槽的表面，以去除由等离子体蚀刻和工艺残留物损坏的层。

9. 发明授权

US09200210B2 Method for stopping operation of reactor 有权
标题翻译：停止反应器运行的方法
公开(公告)号：US09200210B2
公开(公告)日：2015-12-01
申请号：US14007473
申请日：2012-03-15
申请人： Shinya Arai
发明人： Shinya Arai
IPC分类号： C07C27/00 , C10G3/00 , C10G2/00
CPC分类号： C10G3/60 , C10G2/33 , C10G2/342 , C10G2300/4031 , Y02P30/20
摘要： The method for stopping operation of a reactor is provided with a stop step of stopping supply of a synthesis gas containing a carbon monoxide gas and a hydrogen gas into the reactor; a slurry discharge step of discharging slurry from the reactor; a steam supply step of supplying steam higher in temperature than the decomposition temperatures of metal carbonyls into the reactor, thereby discharging gaseous matters inside the reactor; and a carbon monoxide gas detecting step of detecting an amount of carbon monoxide gas contained in the gaseous matters discharged from the reactor. In the steam supply step, supply of the steam is stopped when an amount of the detected carbon monoxide gas continuously declines to be lower than a predetermined reference value.
摘要翻译：停止反应器运转的方法具有停止向反应器供给包含一氧化碳气体和氢气的合成气的停止步骤; 从反应器排出浆料的浆料排出步骤; 蒸汽供给步骤，将比金属羰基化物的分解温度更高的蒸气供给到反应器中，从而将反应器内的气态物质排出; 以及一氧化碳气体检测步骤，检测从反应器排出的气态物质中所含的一氧化碳气体的量。在蒸汽供给步骤中，当检测到的一氧化碳气体的量持续下降到低于预定的参考值时，停止供给蒸汽。

10. 发明申请

US20100038787A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100038787A1
公开(公告)日：2010-02-18
申请号：US12512265
申请日：2009-07-30
申请人： Shinya ARAI
发明人： Shinya ARAI
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76867 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has an interlayer insulating film that is formed on a semiconductor substrate and has a trench formed therein; a first diffusion barrier film formed on an inner surface of the trench; a Cu wiring layer buried in the trench with the first diffusion barrier film interposed between the Cu wiring layer and the inner surface of the trench; a second diffusion barrier film formed on top of the interlayer insulating film and the Cu wiring layer; an alloy layer primarily containing Cu formed at a first interface between the Cu wiring layer and the second diffusion barrier film; a first reaction layer that is formed at a second interface between the interlayer insulating film and the second diffusion barrier film; and a second reaction layer that is formed on the alloy layer and the first reaction layer.
摘要翻译：半导体器件具有层间绝缘膜，其形成在半导体衬底上并形成有沟槽; 形成在所述沟槽的内表面上的第一扩散阻挡膜; 埋设在沟槽中的Cu布线层，其中第一扩散阻挡膜置于Cu布线层和沟槽的内表面之间; 形成在所述层间绝缘膜和所述Cu布线层的顶部上的第二扩散阻挡膜; 在Cu配线层和第二扩散阻挡膜之间的第一界面形成有主要含有Cu的合金层; 第一反应层，形成在所述层间绝缘膜和所述第二扩散阻挡膜之间的第二界面处; 以及形成在合金层和第一反应层上的第二反应层。

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