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1. 发明授权

US09530957B2 Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：US09530957B2
公开(公告)日：2016-12-27
申请号：US13446264
申请日：2012-04-13
申请人： Shinji Sugihara , Fumihito Koike , Yasushi Watanabe , Hideto Ando
发明人： Shinji Sugihara , Fumihito Koike , Yasushi Watanabe , Hideto Ando
IPC分类号： G01R33/09 , H01L43/08 , B82Y25/00 , G01R33/02
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/0206 , G01R33/093
摘要： A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit.
摘要翻译：磁传感器包括磁阻元件和软磁体。磁阻元件具有在基板上包括磁性层和非磁性层的多层，并施加磁阻效应。软磁体与磁阻元件电气断开，并将来自外部的垂直磁场分量在水平方向上转换成磁场分量，从而为磁阻元件提供水平转换的磁场分量。磁阻元件具有固定磁化方向的固定磁性层和具有可变磁化方向的自由磁性层。自由磁性层被叠置在被钉扎的磁性层上，其中非磁性层介于自由磁性层和被钉扎的磁性层之间。磁阻元件的钉扎磁性层的磁化方向是相同的方向。磁阻元件形成桥接电路。

2. 发明授权

US09207293B2 Method for manufacturing a magnetic sensor 有权
标题翻译：磁传感器的制造方法
公开(公告)号：US09207293B2
公开(公告)日：2015-12-08
申请号：US13466887
申请日：2012-05-08
申请人： Hideto Ando , Shinji Sugihara , Fumihito Koike , Kota Asatsuma
发明人： Hideto Ando , Shinji Sugihara , Fumihito Koike , Kota Asatsuma
IPC分类号： G11B5/127 , H04R31/00 , G01R33/09 , B82Y25/00 , H01L43/08 , H01L43/12
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08 , H01L43/12
摘要： A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate.
摘要翻译：提供了灵敏度轴之间没有灵敏度差的磁传感器及其制造方法。该方法包括在基板上形成用于磁阻元件的第一层叠膜的工艺。该元件在一定方向上具有灵敏度轴，并且包括自身固定的铁磁性钉扎层，其中第一和第二铁磁性膜通过反平行耦合层，非磁性中间层和软磁性层反铁磁耦合。该方法还包括从衬底去除第一层叠膜的区域的工艺。膜的剩余区域至少包括要形成元件的区域。该方法还包括在暴露的基板上形成具有与某一方向不同的方向并且具有相同结构的灵敏度轴的用于磁阻元件的第二叠层膜的工艺。

3. 发明授权

US06995961B2 Magnetic sensing element comprising antiferromagnetic layer laminated on free magnetic layer 失效
标题翻译：磁感应元件包括层叠在自由磁性层上的反铁磁层
公开(公告)号：US06995961B2
公开(公告)日：2006-02-07
申请号：US10400946
申请日：2003-03-27
申请人： Naoya Hasegawa , Fumihito Koike , Eiji Umetsu , Masahiko Ishizone
发明人： Naoya Hasegawa , Fumihito Koike , Eiji Umetsu , Masahiko Ishizone
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909
摘要： Changes of the direction of magnetization at the central region of the free magnetic layer are facilitated by using a layer of a magnetic material having a small exchange stiffness constant such as a NiaFeb layer (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.
摘要翻译：通过使用具有小的交换刚度常数的磁性材料层，例如NiBaBeBb，可以促进自由磁性层中心区域的磁化方向的变化，（a和b以％表示，满足a> 80和a + b = 100的关系）和NiFeX层（X是选自Mn，Cu，Zn，Ti，Al中的至少一种元素， Ge，Si，Cr，V，Sn，Ir，Ru，Nb，Sb，W，Mo，Os和Ta）。

4. 发明申请

US20050157435A1 Spin-valve element having fixed layer containing nano-oxide layer 失效
标题翻译：旋转阀元件具有含有纳米氧化物层的固定层
公开(公告)号：US20050157435A1
公开(公告)日：2005-07-21
申请号：US11034386
申请日：2005-01-12
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Fumihito Koike , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39 , H01F10/30 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.
摘要翻译：使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层）接触层。此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R）电阻和单向交流偏置磁场（Hex *）都可以提高。

5. 发明授权

US06639762B2 Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor 失效
标题翻译：具有亚铁磁性状态的自由磁性层的旋转阀薄膜磁性装置及其制造方法
公开(公告)号：US06639762B2
公开(公告)日：2003-10-28
申请号：US09764003
申请日：2001-01-17
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Fumihito Koike , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3948 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3263 , H01F10/3268 , H01F41/302 , Y10T29/49034 , Y10T29/49043
摘要： A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.
摘要翻译：提供了一种自旋阀薄膜磁性器件，其中可以减小不对称性。自旋阀薄膜磁性装置包括自由磁性层和第一和第二固定磁性层，它们分别设置在自由磁性层的厚度方向的每一侧。在自旋阀薄膜磁性器件中，自由磁性层由第一和第二铁磁性自由层构成，其中整个自由磁性层处于亚铁磁状态，第一固定磁性层由第一和第二铁磁性层组成，第二固定铁磁层，其中整个第一固定磁性层处于亚铁磁状态，并且第二固定磁性层由第三和第四钉扎铁磁层构成，其中整个第二固定磁性层处于铁磁性州。此外，更靠近自由磁性层的第二和第三固定铁磁层的磁化方向彼此反平行。

6. 发明授权

US06500570B2 Spin-valve magnetoresistive element and method for making the same 失效
标题翻译：旋转阀磁阻元件及其制造方法
公开(公告)号：US06500570B2
公开(公告)日：2002-12-31
申请号：US09730955
申请日：2000-12-05
申请人： Naoya Hasegawa , Fumihito Koike , Yosuke Ide
发明人： Naoya Hasegawa , Fumihito Koike , Yosuke Ide
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T428/1121
摘要： A spin-valve magnetoresistive element includes an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic interlayer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a pair of longitudinal biasing layers, and a pair of lead layers. When a detecting current is applied from the lead layers, the magnetization vector of the free magnetic layer is aligned in a direction intersecting the magnetization vector of the second pinned magnetic layer, and the magnetization vector of the second pinned magnetic layer is tilted by an angle &thgr; from the normal of a track width direction toward a direction opposite to a longitudinal biasing magnetic field, in order to reduce asymmetry of the output.
摘要翻译：自旋阀磁阻元件包括反铁磁层，第一钉扎磁性层，非磁性中间层，第二钉扎磁性层，非磁性导电层，自由磁性层，一对纵向偏置层和一对引线层。当从引线层施加检测电流时，自由磁性层的磁化矢量在与第二被钉扎磁性层的磁化矢量交叉的方向上对准，并且第二被钉扎磁性层的磁化矢量倾斜一定角度 θ从轨道宽度方向的法线朝向与纵向偏置磁场相反的方向，以减小输出的不对称性。

7. 发明授权

US06346338B1 Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method 有权
标题翻译：组合磁阻/感应薄膜磁头及其制造方法
公开(公告)号：US06346338B1
公开(公告)日：2002-02-12
申请号：US09685435
申请日：2000-10-10
申请人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Kobayashi , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
发明人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Kobayashi , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
IPC分类号： G11B539
CPC分类号： G11B5/3967 , G11B5/112 , G11B5/3106 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/3163 , G11B5/3903 , H01F10/131 , H01F10/265 , Y10S428/90 , Y10T428/1143 , Y10T428/1171 , Y10T428/12465 , Y10T428/12472 , Y10T428/12576 , Y10T428/1259 , Y10T428/1266 , Y10T428/12674 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12931
摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.
摘要翻译：薄膜磁头包括由Fe-Mo合金，Fe-MTO合金或NI-Fe-X合金制成的上芯层和下芯层，使得上芯层具有高的饱和磁通量密度低，矫顽力低，电阻率高，下芯层具有比上芯层低的饱和磁通密度，低矫顽力，高电阻率和低磁致伸缩常数。此外，下芯层形成为使得厚度朝向两个侧端逐渐减小，并且可以在下芯层上形成间隙层以具有均匀的厚度。由于通过溅射形成下芯层，因此可以使用具有优异的软磁性材料的材料，从而能够以高频进行记录。

8. 发明授权

US07193411B2 Angle sensor having low waveform distortion 失效
标题翻译：角度传感器具有低波形失真
公开(公告)号：US07193411B2
公开(公告)日：2007-03-20
申请号：US11445124
申请日：2006-05-31
申请人： Yoshihiro Sudo , Ichiro Tokunaga , Yoshikazu Shimizu , Naoya Hasegawa , Fumihito Koike
发明人： Yoshihiro Sudo , Ichiro Tokunaga , Yoshikazu Shimizu , Naoya Hasegawa , Fumihito Koike
IPC分类号： G01B7/30 , G01R33/09 , H01L43/08
CPC分类号： G01D5/145
摘要： A magnetoresistive element includes a meandering X-axis array that is constituted by X-axis segments alternately connected, and a meandering Y-axis array that is constituted by Y-axis segments alternately connected. When rotated 90°, the Y-axis array has the same layout as the X-axis array. Such a structure cancels the electrical resistance change due to the AMR effect, thus reducing the waveform distortion of output voltage.
摘要翻译：磁阻元件包括由交替连接的X轴段构成的曲折X轴阵列和由交替连接的Y轴分段构成的曲折Y轴阵列。旋转90°时，Y轴阵列的布局与X轴阵列相同。这样的结构抵消了由于AMR效应引起的电阻变化，从而降低了输出电压的波形失真。

9. 发明授权

US06387550B1 Giant magnetoresistive material film, method of producing the same and magnetic head using the same 失效
标题翻译：巨磁阻材料膜，其制造方法和使用其的磁头
公开(公告)号：US06387550B1
公开(公告)日：2002-05-14
申请号：US09547705
申请日：2000-04-11
申请人： Fumihito Koike , Naoya Hasegawa
发明人： Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , C23C14/085 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1129 , Y10T428/1157 , Y10T428/1193 , Y10T428/12958 , Y10T428/26 , Y10T428/265
摘要： A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic layers is pinned by a coercive force increasing layer of &agr;-Fe2O3 provided adjacent thereto and having a thickness of 200 to 1000 Å so as to increase coercive force of the ferromagnetic layer, and the other ferromagnetic layer has free magnetization so as to produce a change in magnetic resistance at a low magnetic field. The present invention also provides a method of producing the giant magnetoresistive material film and a magnetic head provided with the giant magnetoresistive material film.
摘要翻译：巨磁阻材料薄膜包括NiFe合金或NiFeCo合金的至少两个铁磁层，它们通过Au，Ag，Cu或Cr的非磁性层形成在衬底上，其中至少一个铁磁层的磁化被固定通过与其相邻设置的厚度为200〜1000的α-Fe2O3矫顽力增加层，以增加铁磁层的矫顽力，另一个铁磁层具有自由磁化，从而产生磁阻的变化在低磁场下。本发明还提供了制造巨磁阻材料膜的方法和设置有巨磁阻材料膜的磁头。

10. 发明授权

US07567412B2 Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same 有权
标题翻译：具有改善的磁敏度稳定性的磁传感元件及其制造方法
公开(公告)号：US07567412B2
公开(公告)日：2009-07-28
申请号：US11266956
申请日：2005-10-26
申请人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
发明人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3295 , H01F41/303 , H01L43/08 , Y10T428/1107 , Y10T428/1143 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.
摘要翻译：磁传感元件包括具有包括与非磁性材料层接触的第一增强层，第二增强层和低矫顽力层的三层结构的自由磁性层。第二增强层具有比第一增强层更低的磁致伸缩系数λ。如果使用具有双层结构的这种增强层，而不是已知的单层结构，并且第二增强层具有比第一增强层更低的磁致伸缩系数λ，则可以增加磁传感元件的磁阻的变化率而自由磁性层的磁致伸缩系数λ则没有增加。

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