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1. 发明申请

US20120132948A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120132948A1
公开(公告)日：2012-05-31
申请号：US13229972
申请日：2011-09-12
申请人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
发明人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.
摘要翻译：根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。第二电极层与第一半导体层电连接。焊盘电极与第一电极层电连接。辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

2. 发明申请

US20120056155A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056155A1
公开(公告)日：2012-03-08
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/06 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

3. 发明授权

US08853711B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08853711B2
公开(公告)日：2014-10-07
申请号：US13037937
申请日：2011-03-01
申请人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/00 , H01L33/38 , B82Y20/00 , H01L33/42
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括结构体，第一电极层，中间层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。第二电极层电连接到第一半导体层。

4. 发明申请

US20120061640A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120061640A1
公开(公告)日：2012-03-15
申请号：US13037864
申请日：2011-03-01
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0016
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括第一导电类型的第一半导体层，第一电极层，第二导电类型的第二半导体层，发光层和第二电极层。第一电极层包括具有多个开口部的金属部。开口部具有不小于10纳米且不大于50微米的当量圆直径。第二半导体层设置在第一半导体层和第一电极层之间，并且包括与第一电极层接触的第一部分。第一部分的杂质浓度不小于1×1019立方厘米，不大于1×1021立方厘米。发光层设置在第一半导体层和第二半导体层之间。第二电极层连接到第一半导体层。

5. 发明授权

US09444012B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09444012B2
公开(公告)日：2016-09-13
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和第一和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部各自具有不小于10纳米且不大于1微米的圆当量直径。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

6. 发明申请

US20120056232A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056232A1
公开(公告)日：2012-03-08
申请号：US13037937
申请日：2011-03-01
申请人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/38 , H01L33/42 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括结构体，第一电极层，中间层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。第二电极层电连接到第一半导体层。

7. 发明授权

US08680561B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08680561B2
公开(公告)日：2014-03-25
申请号：US13037914
申请日：2011-03-01
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Eishi Tsutsumi , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Eishi Tsutsumi , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。发光层位于第一半导体层和第二半导体层之间。第一电极层位于与第一半导体层相对的第二半导体层的一侧。第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。金属部分接触第二半导体层。沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

8. 发明授权

US08921887B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08921887B2
公开(公告)日：2014-12-30
申请号：US13221319
申请日：2011-08-30
申请人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/62 , H01L33/38
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

9. 发明授权

US08835954B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08835954B2
公开(公告)日：2014-09-16
申请号：US13221326
申请日：2011-08-30
申请人： Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Tsutomu Nakanishi , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Tsutomu Nakanishi , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/60 , H01L33/40 , H01L33/38 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

10. 发明申请

US20120223355A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120223355A1
公开(公告)日：2012-09-06
申请号：US13222281
申请日：2011-08-31
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Takanobu Kamakura , Shinji Nunotani
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/62 , H01L33/36
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。第一电极层设置在该结构的第一半导体层一侧。第一电极层由金属制成并且包含接触第一半导体层的部分。第二电极层设置在该结构的第二半导体层一侧。第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米，不超过5微米。

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