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1. 发明申请

US20120132948A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120132948A1
公开(公告)日：2012-05-31
申请号：US13229972
申请日：2011-09-12
申请人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
发明人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.
摘要翻译：根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。第二电极层与第一半导体层电连接。焊盘电极与第一电极层电连接。辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

2. 发明申请

US20120056155A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056155A1
公开(公告)日：2012-03-08
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/06 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

3. 发明授权

US09444012B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09444012B2
公开(公告)日：2016-09-13
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和第一和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部各自具有不小于10纳米且不大于1微米的圆当量直径。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

4. 发明申请

US20120056232A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056232A1
公开(公告)日：2012-03-08
申请号：US13037937
申请日：2011-03-01
申请人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/38 , H01L33/42 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括结构体，第一电极层，中间层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。第二电极层电连接到第一半导体层。

5. 发明授权

US08680561B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08680561B2
公开(公告)日：2014-03-25
申请号：US13037914
申请日：2011-03-01
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Eishi Tsutsumi , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Eishi Tsutsumi , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。发光层位于第一半导体层和第二半导体层之间。第一电极层位于与第一半导体层相对的第二半导体层的一侧。第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。金属部分接触第二半导体层。沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

6. 发明授权

US08853711B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08853711B2
公开(公告)日：2014-10-07
申请号：US13037937
申请日：2011-03-01
申请人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/00 , H01L33/38 , B82Y20/00 , H01L33/42
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括结构体，第一电极层，中间层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。第二电极层电连接到第一半导体层。

7. 发明申请

US20120061640A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120061640A1
公开(公告)日：2012-03-15
申请号：US13037864
申请日：2011-03-01
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0016
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括第一导电类型的第一半导体层，第一电极层，第二导电类型的第二半导体层，发光层和第二电极层。第一电极层包括具有多个开口部的金属部。开口部具有不小于10纳米且不大于50微米的当量圆直径。第二半导体层设置在第一半导体层和第一电极层之间，并且包括与第一电极层接触的第一部分。第一部分的杂质浓度不小于1×1019立方厘米，不大于1×1021立方厘米。发光层设置在第一半导体层和第二半导体层之间。第二电极层连接到第一半导体层。

8. 发明申请

US20120070958A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120070958A1
公开(公告)日：2012-03-22
申请号：US13238715
申请日：2011-09-21
申请人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
发明人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
IPC分类号： H01L21/762
CPC分类号： H01L21/185 , H01L21/76251 , H01L33/0079
摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.
摘要翻译：在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。因此，第一基板和第二基板结合在一起。第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

9. 发明申请

US20120240903A1 EVAPORATED FUEL TREATMENT DEVICE FOR MOTORCYCLE 有权
标题翻译：用于摩托车的蒸发燃料处理装置
公开(公告)号：US20120240903A1
公开(公告)日：2012-09-27
申请号：US13424849
申请日：2012-03-20
申请人： Nobuyuki Kondo , Hiroshi Inaoka , Teruhide Yamanishi , Kazuo Fujihara , Toshinao Takigawa , Toshiyuki Hyodo , Masaaki Ogawa
发明人： Nobuyuki Kondo , Hiroshi Inaoka , Teruhide Yamanishi , Kazuo Fujihara , Toshinao Takigawa , Toshiyuki Hyodo , Masaaki Ogawa
IPC分类号： F02M33/02
CPC分类号： F02M35/10222 , B62J35/00 , B62J37/00 , B62K2202/00 , F02M25/0872 , F02M35/162
摘要： A charge pipe passage includes: a first engine-side pipe passage part which extends vertically; a second engine-side pipe passage part which is connected to a lower end of the first engine-side pipe passage part on one side in the vehicle widthwise direction and extends from one side to the other side in the vehicle widthwise direction above the engine body; and a third engine-side pipe passage part which is communicably connected to the second engine-side pipe passage part on the other side in the vehicle widthwise direction and is connected to the engine body, and at least a part of the charge pipe passage between a frame-side support part and an engine-side support part is formed of an elastic tube.
摘要翻译：充气管通道包括：垂直延伸的第一发动机侧管道通道部分; 第二发动机侧管路通路部，其在车宽方向的一侧与第一发动机侧管路部的下端连接，并且沿着车宽方向从发动机主体的一侧向另一侧延伸 ; 以及第三发动机侧管道通道部分，其在车辆宽度方向上的另一侧可连接地连接到第二发动机侧管道通道部分，并且连接到发动机主体，并且至少一部分充电管通道在框架侧支撑部和发动机侧支撑部由弹性管形成。

10. 发明授权

US07550792B2 Solid-state imaging device and manufacturing method thereof 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07550792B2
公开(公告)日：2009-06-23
申请号：US11778314
申请日：2007-07-16
申请人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
发明人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
IPC分类号： H01L27/148 , H01L31/101
CPC分类号： H01L27/14625 , H01L27/14623 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.
摘要翻译：固态成像装置包括：在其表面的至少一部分上形成有第一导电类型的区域的基板; 形成在所述第一导电类型的区域的表面的至少一部分上的第二导电类型的区域; 形成在所述基板上的多层布线层; 以及在所述多层布线层中直接形成在所述第二导电类型的区域上方的第二导电类型的层，连接到所述第二导电类型的区域。第二导电类型的层中的杂质浓度随着第二导电类型的区域的接近而降低。

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