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1. 发明申请

US20080066987A1 MOTORCYCLE 有权
标题翻译：摩托车
公开(公告)号：US20080066987A1
公开(公告)日：2008-03-20
申请号：US11898901
申请日：2007-09-17
申请人： Shinji Ito , Toshiyuki Iwai , Toshihiko Ichikawa
发明人： Shinji Ito , Toshiyuki Iwai , Toshihiko Ichikawa
IPC分类号： B62K11/00
CPC分类号： B62M17/00 , B62K25/283
摘要： A motorcycle is provided with a rear fork attached to a body frame so as to swing up and down freely. A rear wheel is attached to the rear end portion of the rear fork, a gear case is attached to a side of the rear wheel, and a drive shaft is provided between the gear case and an output shaft of a power unit. The output of the power unit is transmitted to the rear wheel via the drive shaft and the gear case. In the motorcycle, the gear case is supported by a rear-wheel axle provided in the rear end portion of the rear fork. A torque rod, which links an outer periphery portion of the gear case with the rear fork, serves as a stopper for rotation of the gear case. The resulting configuration provides a shaft-drive system that reduces the assembling time of the torque rod, and improves the productivity of the main line.
摘要翻译：摩托车具有附接到车体框架以便自由上下摆动的后叉。后轮安装在后叉的后端部，齿轮箱安装在后轮的一侧，驱动轴设置在齿轮箱与动力单元的输出轴之间。动力单元的输出通过驱动轴和齿轮箱传递到后轮。在摩托车中，齿轮箱由设置在后叉的后端部的后轮轴支撑。将齿轮箱的外周部与后叉连接的扭矩杆用作齿轮箱的旋转止动件。所得到的配置提供了一种轴驱动系统，其减小了转矩杆的组装时间，并且提高了主线的生产率。

2. 发明授权

US07717213B2 Motorcycle 有权
标题翻译：摩托车
公开(公告)号：US07717213B2
公开(公告)日：2010-05-18
申请号：US11898901
申请日：2007-09-17
申请人： Shinji Ito , Toshiyuki Iwai , Toshihiko Ichikawa
发明人： Shinji Ito , Toshiyuki Iwai , Toshihiko Ichikawa
IPC分类号： B62K11/02
CPC分类号： B62M17/00 , B62K25/283
摘要： A motorcycle is provided with a rear fork attached to a body frame so as to swing up and down freely. A rear wheel is attached to the rear end portion of the rear fork, a gear case is attached to a side of the rear wheel, and a drive shaft is provided between the gear case and an output shaft of a power unit. The output of the power unit is transmitted to the rear wheel via the drive shaft and the gear case. In the motorcycle, the gear case is supported by a rear-wheel axle provided in the rear end portion of the rear fork. A torque rod, which links an outer periphery portion of the gear case with the rear fork, serves as a stopper for rotation of the gear case. The resulting configuration provides a shaft-drive system that reduces the assembling time of the torque rod, and improves the productivity of the main line.
摘要翻译：摩托车具有附接到车体框架以便自由上下摆动的后叉。后轮安装在后叉的后端部，齿轮箱安装在后轮的一侧，驱动轴设置在齿轮箱与动力单元的输出轴之间。动力单元的输出通过驱动轴和齿轮箱传递到后轮。在摩托车中，齿轮箱由设置在后叉的后端部的后轮轴支撑。将齿轮箱的外周部与后叉连接的扭矩杆用作齿轮箱的旋转止动件。所得到的配置提供了一种轴驱动系统，其减小了转矩杆的组装时间，并且提高了主线的生产率。

3. 发明授权

US06655363B2 Fuel supply system for vehicle 失效
公开(公告)号：US06655363B2
公开(公告)日：2003-12-02
申请号：US09961274
申请日：2001-09-25
申请人： Koki Kobayashi , Toshihiko Ichikawa , Hiroyuki Kido , Hiroshi Nakano
发明人： Koki Kobayashi , Toshihiko Ichikawa , Hiroyuki Kido , Hiroshi Nakano
IPC分类号： F02M3704
CPC分类号： B62J35/00 , F02M35/162 , F02M37/10 , Y10T137/86043
摘要： A fuel supply system for a vehicle is provided with a fuel pump disposed in a fuel tank sitting astride a vehicle body frame. The fuel pump is disposed along a side surface of the fuel tank in a position opposed to a portion of the vehicle body frame. This fuel supply system for a vehicle provides a system in which a fuel pump can be disposed even in a fuel tank of a saddle-ridden vehicle with minimum modifications required in size and shape.

4. 发明授权

US06248669B1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06248669B1
公开(公告)日：2001-06-19
申请号：US09302039
申请日：1999-04-29
申请人： Toshihiko Ichikawa , Hiroshi Ogawa
发明人： Toshihiko Ichikawa , Hiroshi Ogawa
IPC分类号： H01L2100
CPC分类号： G03F7/09 , H01L21/0274 , H01L21/31144
摘要： A method of manufacturing a semiconductor device comprises forming a composite film which is etched on a base substrate. The composite film includes nitrogen atoms but, at the surface portion thereof, does not substantially include nitrogen atoms. The method further comprises forming a chemically amplified photo resist film on the composite film, exposing the photo resist film according to predetermined patterns, developing the photo resist film to form a patterned resist film, and etching the composite film by using the patterned resist film as a mask. According to this method, deterioration of throughput can be avoided, and the phenomenon of deactivation of proton acid generated on the resist exposure can be suppressed even after long time storage or even when the reconstruction is required.
摘要翻译：一种制造半导体器件的方法包括形成在基底衬底上蚀刻的复合膜。复合膜包括氮原子，但在其表面部分基本上不包括氮原子。该方法还包括在复合膜上形成化学放大的光致抗蚀剂膜，根据预定图案曝光光致抗蚀剂膜，显影光致抗蚀膜以形成图案化的抗蚀剂膜，并通过使用图案化的抗蚀剂膜蚀刻复合膜一个面具根据该方法，可以避免通过量的劣化，即使在长时间保存后甚至在需要重构时也可以抑制在抗蚀剂曝光时产生的质子酸的失活现象。

5. 发明授权

US06451640B1 Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same 失效
标题翻译：在公共衬底上具有NMOS和PMOS晶体管的半导体器件及其制造方法
公开(公告)号：US06451640B1
公开(公告)日：2002-09-17
申请号：US09609352
申请日：2000-07-05
申请人： Toshihiko Ichikawa
发明人： Toshihiko Ichikawa
IPC分类号： H01L218238
CPC分类号： H01L27/0922 , H01L21/823892 , H01L27/088 , H01L27/0928
摘要： There is provided a method of fabricating a semiconductor device, including the steps of (a) forming first well regions in a semiconductor substrate in all regions in which high-voltage and low-voltage MOS transistors are to be formed, the semiconductor At e having a first conductivity and the first well regions having a second conductivity, (b) forming an isolation layer on the semiconductor substrate for isolating the first well regions from each other, (c) forming high-voltage well regions having a first conductivity and low-voltage well regions one of which has a first conductivity and another of which has a second conductivity, and (d) forming MOS transistors on the high-voltage and low-voltage well regions. The high-voltage and low-voltage well regions are formed with the isolation layer being used as a mark. The above-mentioned method makes it possible to form low-voltage and high-voltage MOS transistors on a common semiconductor substrate in the smallest number of fabrication steps.
摘要翻译：提供了一种制造半导体器件的方法，包括以下步骤：（a）在要形成高压和低压MOS晶体管的所有区域中在半导体衬底中形成第一阱区，所述半导体具有第一导电性和第一阱区具有第二导电性，（b）在所述半导体衬底上形成用于将所述第一阱区彼此隔离的隔离层，（c）形成具有第一导电性的高电压阱区，电压阱区域中的一个具有第一导电性，另一个具有第二导电性，以及（d）在高电压和低电压阱区上形成MOS晶体管。形成高电压和低电压阱区，隔离层用作标记。上述方法使得可以在最小数量的制造步骤中在公共半导体衬底上形成低电压和高压MOS晶体管。

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