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1. 发明授权

US08472150B2 Magneto-resistive effect device and magnetic disk system 有权
标题翻译：磁阻效应器和磁盘系统
公开(公告)号：US08472150B2
公开(公告)日：2013-06-25
申请号：US11968911
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3993 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01L43/10
摘要： A giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of the spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.
摘要翻译：具有包括间隔层的CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），以及间隔层彼此叠置的第一铁磁层和第二铁磁层，其中所述间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及插入在所述第一非磁性金属层和所述第二非磁性金属层之间的半导体氧化物层非磁性金属层，形成间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，添加金属不太可能被氧化成锌。

2. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

3. 发明授权

US08240025B2 Method for manufacturing head including light source unit for thermal assist 有权
标题翻译：制造头部的方法，包括用于热辅助的光源单元
公开(公告)号：US08240025B2
公开(公告)日：2012-08-14
申请号：US12888916
申请日：2010-09-23
申请人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
发明人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/105 , G11B5/314 , G11B5/6088 , G11B2005/0021 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/53165 , Y10T29/53265 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： Provided is a method and apparatus to manufacture a thermally-assisted magnetic recording head in which a light source unit including a light source and a slider including an optical system are joined. The method comprises steps of: adhering by suction the light source unit with a back holding jig; bringing the light into contact with a slider back surface; applying a load to a load application surface of the light source unit by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; positioning the light source unit apart from the slider, and then aligning the light source with the optical system; bringing again the light source unit into contact with the slider; and applying a load again to the load application surface.
摘要翻译：提供了一种制造热辅助磁记录头的方法和装置，其中包括光源的光源单元和包括光学系统的滑块相连接。该方法包括以下步骤：用后保持夹具吸附光源单元; 使光与滑块背面接触; 通过加载装置将负载施加到光源单元的负载施加表面，以使光源单元的接合表面与滑块背面一致; 将光源单元与滑块分开，然后将光源与光学系统对准; 使光源单元再次与滑块接触; 并将负载再次施加到负载施加表面。

4. 发明授权

US08194363B2 Thin film magnetic head provided with dual synthetic free layers 有权
标题翻译：薄膜磁头配有双层合成自由层
公开(公告)号：US08194363B2
公开(公告)日：2012-06-05
申请号：US12379624
申请日：2009-02-26
申请人： Shinji Hara , Yoshihiro Tsuchiya
发明人： Shinji Hara , Yoshihiro Tsuchiya
IPC分类号： G11B21/24
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996
摘要： A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration.
摘要翻译：薄膜磁头包括第一至第四自由层，间隔层和偏置磁场施加层。当偏置磁场施加到第一和第二自由层时，第一自由层和第二自由层在与ABS的正交方向彼此相反的方向上被磁化，并且被交换耦合，使得磁化方向偏置磁场和第一自由层是锐角的，使得偏置磁场的磁化方向与第二自由层之间的角度是锐角的。类似地，第三层和第四层具有相同的构造。

5. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

6. 发明授权

US08031444B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US08031444B2
公开(公告)日：2011-10-04
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译：在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有至少一种选自以下的金属元素的掺杂剂：的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

7. 发明授权

US07944650B2 Magnetoresistive element including layered film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括层间膜接触间隔层的周边
公开(公告)号：US07944650B2
公开(公告)日：2011-05-17
申请号：US11898335
申请日：2007-09-11
申请人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.
摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。磁阻元件还包括接触间隔层的周边的层状膜。间隔层包括使用氧化物半导体作为材料形成的半导体层。层叠膜包括依次堆叠的第一层，第二层和第三层。第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。第三层是绝缘层。

8. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

9. 发明申请

US20100232066A1 Magneto-resistive effect element provided with GaN spacer layer 有权
标题翻译：具有GaN间隔层的磁阻效应元件
公开(公告)号：US20100232066A1
公开(公告)日：2010-09-16
申请号：US12382137
申请日：2009-03-10
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/60 , G11B5/127 , G11B5/48
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.
摘要翻译：磁阻效应（MR）元件包括第一磁性层和第二磁性层，其中第一和第二磁性层的磁化方向的相对角度根据外部磁场而改变; 以及设置在第一磁性层和第二磁性层之间的间隔层。间隔层包含氮化镓（GaN）作为主要成分。根据本发明的一个实施例的薄膜磁头具有以下结构：上述具有第一磁性层和第二磁性层作为自由层的MR元件，其中两层中的磁化方向根据外部磁场变化; 偏置磁场施加层，其在与空气轴承表面（ABS）正交的方向上对第一和第二磁性层施加偏置磁场; 偏置磁场施加层形成在从ABS看到的MR元件的后侧; 并且感测电流在与MR元件的层表面正交的方向上流动。

10. 发明申请

US20100214701A1 Magnetoresistive effect element in cpp-type structure and magnetic disk device 有权
标题翻译： cpp型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US20100214701A1
公开(公告)日：2010-08-26
申请号：US12379625
申请日：2009-02-26
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/127
CPC分类号： G01R33/098 , B82Y25/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T29/49021 , Y10T428/1114 , Y10T428/1171
摘要： An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
摘要翻译：根据本发明的MR元件具有进一步提高MR比的优越效果，因为间隔层40的结构由具有某些材料的特定三层结构构成，并且第一铁磁层30和第二铁磁层50含有一定量的选自氮（N），碳（C）和氧（O）的元素。

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