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1. 发明申请

US20120252729A1 PTH-CONTAINING THERAPEUTIC/PROPHYLACTIC AGENT FOR OSTEOPOROSIS, CHARACTERIZED IN THAT PTH IS ADMINISTERED ONCE A WEEK IN A UNIT DOSE OF 100 TO 200 UNITS 审中-公开
标题翻译：含PTH的治疗/预防药物用于治疗OSTEOPOSOSIS，其特征在于每周一次给予100至200单位的单位剂量
公开(公告)号：US20120252729A1
公开(公告)日：2012-10-04
申请号：US13395000
申请日：2010-09-08
申请人： Shinichiro Shirae , Yasuo Nakamura , Yuiko Oya , Yoshihide Nozaki , Nobuyuki Kobayashi , Tatsuhiko Kuroda , Hiroki Kato , Masashi Serada , Kazuyoshi Hori
发明人： Shinichiro Shirae , Yasuo Nakamura , Yuiko Oya , Yoshihide Nozaki , Nobuyuki Kobayashi , Tatsuhiko Kuroda , Hiroki Kato , Masashi Serada , Kazuyoshi Hori
IPC分类号： A61K38/29 , C07K14/635 , A61P19/10
CPC分类号： A61K38/29 , A61K33/10 , A61K45/06 , A61K2300/00
摘要： A method of treating osteoporosis by PTH that has excellent safety and high efficacy is disclosed, along with a method for inhibiting/preventing bone fractures by PTH that has excellent safety, as well as providing a drug to do this. A drug containing PTH as the active ingredient is disclosed, characterized in that a unit dose of PTH of 100 to 200 units is administered weekly in the above method.
摘要翻译：公开了一种通过PTH治疗骨质疏松症的方法，其具有优异的安全性和高效力，以及通过PTH抑制/预防骨折的方法，其具有优异的安全性，以及提供药物。公开了含有PTH作为活性成分的药物，其特征在于，以上述方法每周施用100〜200单位的PTH单位剂量。

2. 发明授权

US07068926B2 Heat treatment apparatus of light-emission type and method of cleaning same 有权
标题翻译：发光型热处理装置及其清洗方法
公开(公告)号：US07068926B2
公开(公告)日：2006-06-27
申请号：US10926639
申请日：2004-08-26
申请人： Yoshihide Nozaki
发明人： Yoshihide Nozaki
IPC分类号： F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D5/0037
摘要： After the maintenance of a heat treatment apparatus, a susceptor and a heating plate are moved upwardly and a nitrogen gas flow from an inlet toward an outlet passage is produced prior to heat treating a semiconductor wafer. In this state, flash lamps are turned on to cause momentary expansion and contraction of the gas in a chamber, thereby scattering particles deposited on a bottom plate, etc. The scattered particles are removed by the nitrogen gas passing through a bottom portion of the chamber and discharged through the outlet passage. The particles are easily removed due to the flash lamps being turned on a predetermined number of times at fixed time intervals while folowing the nitrogen gas. The heat treatment apparatus has a light-emission characteristic and easily removes the particles in the chamber.
摘要翻译：在热处理设备的维护之后，在对半导体晶片进行热处理之前，使基座和加热板向上移动并且从入口到出口通道的氮气流动。在这种状态下，闪光灯被打开以引起腔室中的气体的瞬间膨胀和收缩，从而散射沉积在底板等上的颗粒。散射的颗粒被通过室的底部的氮气除去并通过出口通道排出。由于闪光灯以固定的时间间隔转动预定次数，同时吹过氮气，因此容易去除颗粒。热处理装置具有发光特性，容易除去室内的粒子。

3. 发明申请

US20050047767A1 Heat treatment apparatus of light-emission type and method of cleaning same 有权
标题翻译：发光型热处理装置及其清洗方法
公开(公告)号：US20050047767A1
公开(公告)日：2005-03-03
申请号：US10926639
申请日：2004-08-26
申请人： Yoshihide Nozaki
发明人： Yoshihide Nozaki
IPC分类号： F27B17/00 , F27B5/14 , F27D5/00 , F27D11/00 , F27D11/02 , F27D17/00 , H01L21/00 , H01L21/26
CPC分类号： H01L21/67115 , F27B17/0025 , F27D5/0037
摘要： After the maintenance of a heat treatment apparatus, a susceptor and a heating plate are moved upwardly and a flow of nitrogen gas from an inlet passage toward an outlet passage is produced prior to the heat treatment of a semiconductor wafer. In this state, flash lamps are turned on to cause the momentary expansion and contraction of the gas in a chamber, thereby scattering particles deposited on a bottom plate and the like. The scattered particles are removed by the flow of nitrogen gas passing through a bottom portion of the chamber and discharged outwardly through the outlet passage. The particles in the chamber are easily removed only by turning on the flash lamps a predetermined number of times at fixed time intervals while producing such a flow of nitrogen gas. This provides the heat treatment apparatus of a light-emission type and a method of cleaning the heat treatment apparatus capable of easily removing the particles in the chamber.
摘要翻译：在热处理设备的维护之后，基座和加热板向上移动，并且在半导体晶片的热处理之前产生从入口通道到出口通道的氮气流。在这种状态下，闪光灯被打开以引起腔室中气体的瞬间膨胀和收缩，从而散射沉积在底板等上的颗粒。散落的颗粒被通过室的底部的氮气流除去，并通过出口通道向外排出。只有通过在产生这样的氮气流的同时以固定的时间间隔开启闪光灯预定次数才能容易地去除室中的颗粒。这提供了一种发光型热处理装置和清洁能够容易地除去腔室中的颗粒的热处理装置的方法。

4. 发明申请

US20060291835A1 Susceptor for heat treatment and heat treatment apparatus 审中-公开
标题翻译：受体用于热处理和热处理设备
公开(公告)号：US20060291835A1
公开(公告)日：2006-12-28
申请号：US11473847
申请日：2006-06-23
申请人： Yoshihide Nozaki , Hideo Nishihara , Hiroki Kiyama
发明人： Yoshihide Nozaki , Hideo Nishihara , Hiroki Kiyama
IPC分类号： A21B2/00
CPC分类号： H01L21/67115 , H01L21/68735
摘要： A susceptor for holding a semiconductor wafer when flash heating is performed by exposing the semiconductor wafer to a flash of light from flash lamps is formed with a recessed portion of a concave configuration having an outer diameter greater than the diameter of the semiconductor wafer, as seen in plan view. When the susceptor is viewed from above, the concave configuration of the recessed portion is greater in plan view size than the semiconductor wafer. The susceptor formed with the recessed portion holds the semiconductor wafer in such a manner that an inner wall surface of the recessed portion supports a peripheral portion of the semiconductor wafer. As a result, a gap filled with a layer of gas is formed between the lower surface of the semiconductor wafer and the upper surface of the susceptor, to prevent a crack in the semiconductor wafer when the semiconductor wafer is exposed to a flash of light from the flash lamps.
摘要翻译：当通过将半导体晶片暴露于来自闪光灯的闪光来进行闪光加热时，用于保持半导体晶片的感受体形成有具有大于半导体晶片的直径的外径的凹形构造的凹部，如图所示在平面图。当从上方观察基座时，凹部的凹形构造的平面图尺寸大于半导体晶片。形成有凹部的基座以这样的方式保持半导体晶片，使得凹部的内壁表面支撑半导体晶片的周边部分。结果，在半导体晶片的下表面和基座的上表面之间形成填充有气体层的间隙，以防止当半导体晶片暴露于闪光时的半导体晶片中的裂纹闪光灯。

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