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1. 发明申请

US20110094881A1 SENSOR CARTRIDGE AND MEASURING DEVICE 有权
标题翻译：传感器和测量装置
公开(公告)号：US20110094881A1
公开(公告)日：2011-04-28
申请号：US12910685
申请日：2010-10-22
申请人： Shinichi WATANABE
发明人： Shinichi WATANABE
IPC分类号： G01N27/28
CPC分类号： G01N33/4875 , G01N27/3271 , G01N27/3273 , G01N33/48757
摘要： A sensor cartridge for supplying a sensor is used. The sensor cartridge includes a casing within which the plurality of sensors can be arranged, and that allows a sample to be introduced to a sensor located at a preset location, and a connection structure. The connection structure electrically connects an external device and a sensor electrode of the sensor located at the preset location. The casing is formed so as to be held by the external device when the external device and the sensor electrode of the sensor are electrically connected via the connection structure.
摘要翻译：使用用于供应传感器的传感器盒。传感器盒包括壳体，多个传感器可以在该壳体内布置，并且允许将样品引入位于预设位置的传感器和连接结构。连接结构将外部设备和位于预设位置的传感器的传感器电极电连接。当外部装置和传感器的传感器电极经由连接结构电连接时，壳体被形成为被外部装置保持。

2. 发明申请

US20080315280A1 SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL UNIT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有存储单元的半导体存储器件及其制造方法
公开(公告)号：US20080315280A1
公开(公告)日：2008-12-25
申请号：US12142274
申请日：2008-06-19
申请人： Shinichi WATANABE , Fumitaka Arai , Makoto Mizukami , Hirofumi Inoue , Masaki Kondo
发明人： Shinichi WATANABE , Fumitaka Arai , Makoto Mizukami , Hirofumi Inoue , Masaki Kondo
IPC分类号： H01L29/423 , H01L21/336
CPC分类号： H01L27/115 , H01L27/11526 , H01L27/11529
摘要： A semiconductor memory device includes a silicon substrate including a first region which has a buried insulating layer below a single-crystal silicon layer and a second region which does not have the buried insulating layer below the single-crystal silicon layer, at least one memory cell transistor which has a first gate electrode, the first gate electrode being provided on the single-crystal silicon layer in the first region, and at least one selective gate transistor which has a second gate electrode and is provided on the single-crystal silicon layer in the first region. The one selective gate transistor is provided in such a manner that a part of the second gate electrode is placed on the single-crystal silicon layer in the second region.
摘要翻译：一种半导体存储器件包括：硅衬底，其包括在单晶硅层下方具有掩埋绝缘层的第一区域和在单晶硅层下方不具有掩埋绝缘层的第二区域;至少一个存储单元晶体管，其具有第一栅极电极，第一栅电极设置在第一区域中的单晶硅层上，以及至少一个选择栅极晶体管，其具有第二栅电极，并设置在单晶硅层上第一个地区。一个选择栅极晶体管被设置成使得第二栅电极的一部分被放置在第二区域中的单晶硅层上。

3. 发明申请

US20110233680A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110233680A1
公开(公告)日：2011-09-29
申请号：US12886007
申请日：2010-09-20
申请人： Saku HASHIURA , Shinichi WATANABE , Takeshi SHIMANE , Norihisa ARAI
发明人： Saku HASHIURA , Shinichi WATANABE , Takeshi SHIMANE , Norihisa ARAI
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L21/823462 , H01L21/823412 , H01L27/115
摘要： According to one embodiment, a nonvolatile memory device including MOS transistors formed in a surface of one semiconductor substrate is provided. The device includes a first and second MOS transistors. The first MOS transistor includes a first source and drain regions spaced from each other, a first gate insulating film provided on the surface, a first gate electrode provided on the first gate insulating film, and a first channel region located immediately below the first gate insulating film and containing impurities of both conductivity types. The second MOS transistor includes a second source and drain regions spaced from each other, a second gate insulating film provided on the surface, a second gate electrode provided on the second gate insulating film, and a second channel region located immediately below the second gate insulating film and having an identical concentration profile of the impurity to the first channel region.
摘要翻译：根据一个实施例，提供一种包括形成在一个半导体衬底的表面中的MOS晶体管的非易失性存储器件。该器件包括第一和第二MOS晶体管。第一MOS晶体管包括彼此间隔开的第一源极和漏极区域，设置在表面上的第一栅极绝缘膜，设置在第一栅极绝缘膜上的第一栅极电极和位于第一栅极绝缘膜正下方的第一沟道区域膜和含有两种导电类型的杂质。第二MOS晶体管包括彼此间隔开的第二源极和漏极区域，设置在表面上的第二栅极绝缘膜，设置在第二栅极绝缘膜上的第二栅极电极和位于第二栅极绝缘膜正下方的第二沟道区域并且具有与第一通道区域相同的杂质浓度分布。

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