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1. 发明授权

US08963050B2 Apparatus for and method of heat-treating thin film on surface of substrate 有权
标题翻译：薄膜表面热处理设备及方法
公开(公告)号：US08963050B2
公开(公告)日：2015-02-24
申请号：US13272657
申请日：2011-10-13
申请人： Shinichi Kato , Hiroki Kiyama
发明人： Shinichi Kato , Hiroki Kiyama
IPC分类号： F27D11/00 , H05B7/18 , H05B3/68 , F26B3/30 , F27B17/00 , F27D7/02 , H01L21/67
CPC分类号： F27B17/0025 , F27D7/02 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.
摘要翻译：将其上形成有薄膜的表面的半导体晶片输送到室中并由保持器保持。在更换室内提供的气氛之后，将闪光灯从光照射部分中的闪光灯朝向半导体晶片引导，以对薄膜进行烘烤处理。用光照射部分的卤素灯的光照射半导体晶片也是在与闪光的照射的同时开始的。在非常短的时间内发射的光并且具有高强度的闪光使得薄膜的表面温度瞬间上升。这防止了由于膜中长时间烘烤而导致的异常晶粒生长的发生。

2. 发明授权

US08852966B2 Heat treatment method and heat treatment apparatus of thin film 有权
标题翻译：薄膜的热处理方法和热处理装置
公开(公告)号：US08852966B2
公开(公告)日：2014-10-07
申请号：US13609947
申请日：2012-09-11
申请人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
发明人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/26 , H01L21/02 , H01L21/268 , H01L21/67
CPC分类号： H01L21/2686 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要翻译：在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间为0.01毫秒以上且1毫秒以下。由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

3. 发明授权

US08145046B2 Heat treatment apparatus and method for heating substrate by light irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08145046B2
公开(公告)日：2012-03-27
申请号：US12421896
申请日：2009-04-10
申请人： Hiroki Kiyama , Kenichi Yokouchi
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F26B3/30 , C33C16/00 , A21B1/00
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.
摘要翻译：在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。第二阶段的排放量是峰值的三分之二以上。第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

4. 发明申请

US20090263112A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION 有权
标题翻译：热处理装置和通过光照射加热基板的方法
公开(公告)号：US20090263112A1
公开(公告)日：2009-10-22
申请号：US12421896
申请日：2009-04-10
申请人： Hiroki Kiyama , Kenichi Yokouchi
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F26B3/30
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.
摘要翻译：在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。第二阶段的排放量是峰值的三分之二以上。第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

5. 发明授权

US08041198B2 Heat treatment apparatus and method for heating substrate by photo-irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08041198B2
公开(公告)日：2011-10-18
申请号：US12424192
申请日：2009-04-15
申请人： Hiroki Kiyama , Kenichi Yokouchi
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F26B3/30 , C23C16/00 , A21B1/00
CPC分类号： H01L21/67115
摘要： In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer.
摘要翻译：在总光照照射时间为1秒以下的光照射加热中，在将发光输出增加到目标值的同时进行半导体晶片的初始光照射之后，进行半导体晶片的后续光照射，同时将排放量保持在与目标值的±20％范围内。初始光照射的光照射时间为0.1〜10毫秒，后续光照射的光照射时间为5毫秒至小于1秒。这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大体上恒定的处理温度，从而实现注入离子的激活和修复引入了对半导体晶片没有任何热损伤的缺陷。

6. 发明申请

US20060291835A1 Susceptor for heat treatment and heat treatment apparatus 审中-公开
标题翻译：受体用于热处理和热处理设备
公开(公告)号：US20060291835A1
公开(公告)日：2006-12-28
申请号：US11473847
申请日：2006-06-23
申请人： Yoshihide Nozaki , Hideo Nishihara , Hiroki Kiyama
发明人： Yoshihide Nozaki , Hideo Nishihara , Hiroki Kiyama
IPC分类号： A21B2/00
CPC分类号： H01L21/67115 , H01L21/68735
摘要： A susceptor for holding a semiconductor wafer when flash heating is performed by exposing the semiconductor wafer to a flash of light from flash lamps is formed with a recessed portion of a concave configuration having an outer diameter greater than the diameter of the semiconductor wafer, as seen in plan view. When the susceptor is viewed from above, the concave configuration of the recessed portion is greater in plan view size than the semiconductor wafer. The susceptor formed with the recessed portion holds the semiconductor wafer in such a manner that an inner wall surface of the recessed portion supports a peripheral portion of the semiconductor wafer. As a result, a gap filled with a layer of gas is formed between the lower surface of the semiconductor wafer and the upper surface of the susceptor, to prevent a crack in the semiconductor wafer when the semiconductor wafer is exposed to a flash of light from the flash lamps.
摘要翻译：当通过将半导体晶片暴露于来自闪光灯的闪光来进行闪光加热时，用于保持半导体晶片的感受体形成有具有大于半导体晶片的直径的外径的凹形构造的凹部，如图所示在平面图。当从上方观察基座时，凹部的凹形构造的平面图尺寸大于半导体晶片。形成有凹部的基座以这样的方式保持半导体晶片，使得凹部的内壁表面支撑半导体晶片的周边部分。结果，在半导体晶片的下表面和基座的上表面之间形成填充有气体层的间隙，以防止当半导体晶片暴露于闪光时的半导体晶片中的裂纹闪光灯。

7. 发明授权

US08498525B2 Heat treatment apparatus and method for heating substrate by light irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08498525B2
公开(公告)日：2013-07-30
申请号：US13293641
申请日：2011-11-10
申请人： Hiroki Kiyama , Kenichi Yokouchi
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F24C7/00
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.
摘要翻译：在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。第二阶段的排放量是峰值的三分之二以上。第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。

8. 发明申请

US20120114316A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION 有权
标题翻译：热处理装置和通过光照射加热基板的方法
公开(公告)号：US20120114316A1
公开(公告)日：2012-05-10
申请号：US13293641
申请日：2011-11-10
申请人： Hiroki Kiyama , Kenichi Yokouchi
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F27D11/12
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.
摘要翻译：在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。第二阶段的排放量是峰值的三分之二以上。第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。

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