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1. 发明授权

US07794922B2 Pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US07794922B2
公开(公告)日：2010-09-14
申请号：US11431823
申请日：2006-05-11
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

2. 发明申请

US20060263726A1 Pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20060263726A1
公开(公告)日：2006-11-23
申请号：US11431823
申请日：2006-05-11
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

3. 发明申请

US20110039214A1 Pattern Forming Method and Method of Manufacturing Semiconductor Device 审中-公开
标题翻译：图案形成方法及制造半导体器件的方法
公开(公告)号：US20110039214A1
公开(公告)日：2011-02-17
申请号：US12857710
申请日：2010-08-17
申请人： Shinichi ITO , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi ITO , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/20 , H01L21/308
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

4. 发明申请

US20070190462A1 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20070190462A1
公开(公告)日：2007-08-16
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

5. 发明授权

US07742150B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07742150B2
公开(公告)日：2010-06-22
申请号：US11654566
申请日：2007-01-18
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura
IPC分类号： G03B27/32
CPC分类号： G03D3/08 , G03B27/42 , G03F7/70341
摘要： A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.
摘要翻译：一种半导体器件的制造方法，包括在曝光对象基板和曝光装置的投影光学系统之间插入液体的液浸式移动曝光，并对相对于设置在表面上的多个曝光区域进行曝光处理在相对于所述系统相对移动所述衬底的同时，在所述每个曝光区域的相邻曝光区域中相对于所述衬底相对地移动所述衬底同时在所述衬底和所述系统之间插入液体的第一液浸动作，以及第二液浸移动，其以比第一移动中的移动速度低的速度相对于所述系统移动所述基板，同时在所述基板和所述系统之间以比移动距离长的距离在第一动作。

6. 发明申请

US20070188733A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070188733A1
公开(公告)日：2007-08-16
申请号：US11654566
申请日：2007-01-18
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura
IPC分类号： G03B27/32
CPC分类号： G03D3/08 , G03B27/42 , G03F7/70341
摘要： A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.
摘要翻译：一种半导体器件的制造方法，包括在曝光对象基板和曝光装置的投影光学系统之间插入液体的液浸式移动曝光，并对相对于设置在表面上的多个曝光区域进行曝光处理在相对于所述系统相对移动所述衬底的同时，在所述每个曝光区域的相邻曝光区域中相对于所述衬底相对地移动所述衬底同时在所述衬底和所述系统之间插入液体的第一液浸动作，以及第二液浸移动，其以比第一移动中的移动速度低的速度相对于所述系统移动所述基板，同时在所述基板和所述系统之间以比移动距离长的距离在第一动作。

7. 发明授权

US07794923B2 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

8. 发明授权

US06225033B1 Method of forming a resist pattern 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US06225033B1
公开(公告)日：2001-05-01
申请号：US09413543
申请日：1999-10-06
申请人： Yasunobu Onishi , Kentaro Matsunaga , Shoji Mimotogi , Katsuya Okumura
发明人： Yasunobu Onishi , Kentaro Matsunaga , Shoji Mimotogi , Katsuya Okumura
IPC分类号： G03F730
CPC分类号： G03F7/38
摘要： An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.
摘要翻译：在形成在硅晶片上的硅衬底上的SiO 2膜上形成防反射膜。在抗反射膜上形成化学放大正光刻胶。抗蚀剂曝光。强碱的蒸气被施加到化学放大正性抗蚀剂的表面。整个抗蚀剂用显影液显影，从而形成抗蚀剂图案。

9. 发明授权

US07973907B2 Method for treating substrate, method for conveying substrate, and apparatus for conveying substrate 失效
标题翻译：处理基板的方法，输送基板的方法以及输送基板的装置
公开(公告)号：US07973907B2
公开(公告)日：2011-07-05
申请号：US12261596
申请日：2008-10-30
申请人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
发明人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
IPC分类号： G03B27/52
CPC分类号： G03F7/16
摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.
摘要翻译：在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。气氛基本上不含湿气，直到将基板输送到曝光装置。

10. 发明申请

US20100081091A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100081091A1
公开(公告)日：2010-04-01
申请号：US12556425
申请日：2009-09-09
申请人： Koji HASHIMOTO , Daisuke Kawamura , Kentaro Matsunaga , Iwao Higashikawa
发明人： Koji HASHIMOTO , Daisuke Kawamura , Kentaro Matsunaga , Iwao Higashikawa
IPC分类号： G03F7/20
CPC分类号： H01L21/32139 , H01L21/0337
摘要： According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including; sequentially forming a first film and a second film on a base film; processing the second film, thereby forming a second pattern; processing the first film with the second pattern, thereby forming a first pattern; removing the second pattern; depositing a third film on the base film and the first pattern; processing the third film, thereby forming a third pattern on side walls of the first pattern; removing the first pattern; and processing the base film with the third pattern; wherein, when processing the third film, a process condition is adjusted based on at least one information of a size of the second pattern and a size of the first pattern.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件的制造方法，该方法包括：在基膜上依次形成第一膜和第二膜; 处理第二膜，从而形成第二图案; 用第二图案处理第一胶片，从而形成第一图案; 去除第二模式; 在基膜和第一图案上沉积第三膜; 处理第三膜，从而在第一图案的侧壁上形成第三图案; 去除第一个模式; 并用第三图案处理基膜; 其中，当处理所述第三胶片时，基于所述第二图案的尺寸和所述第一图案的尺寸的至少一个信息来调整处理条件。

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