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1. 发明授权

US08247823B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08247823B2
公开(公告)日：2012-08-21
申请号：US12923384
申请日：2010-09-17
申请人： Kosuke Yahata , Naoki Nakajo , Masao Kamiya
发明人： Kosuke Yahata , Naoki Nakajo , Masao Kamiya
IPC分类号： H01L27/15 , H01L27/148 , H01L21/00
CPC分类号： H01L33/382 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction.
摘要翻译：发光元件包括：半导体层叠结构，包括第一半导体层，发光层和第二半导体层，设置在半导体层叠结构上的绝缘层，第一布线，包括第一垂直导电部分和第一平面导电部分并且电连接到第一半导体层，第一垂直导电部分在垂直方向上在绝缘层，发光层和第二半导体层的内部延伸，并且第一平面导电部分在绝缘层内部延伸平面方向，第二布线包括第二垂直导电部分和第二平面导电部分，并且电连接到第二半导体层，第二垂直导电部分在垂直方向上延伸在绝缘层内部，第二平面导电部分延伸里面 e绝缘层在平面方向上。

2. 发明申请

US20110068359A1 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US20110068359A1
公开(公告)日：2011-03-24
申请号：US12923384
申请日：2010-09-17
申请人： Kosuke Yahata , Naoki Nakajo , Masao Kamiya
发明人： Kosuke Yahata , Naoki Nakajo , Masao Kamiya
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction.
摘要翻译：发光元件包括：半导体层叠结构，包括第一半导体层，发光层和第二半导体层，设置在半导体层叠结构上的绝缘层，第一布线，包括第一垂直导电部分和第一平面导电部分并且电连接到第一半导体层，第一垂直导电部分在垂直方向上在绝缘层，发光层和第二半导体层的内部延伸，并且第一平面导电部分在绝缘层内部延伸平面方向，第二布线包括第二垂直导电部分和第二平面导电部分，并且电连接到第二半导体层，第二垂直导电部分在垂直方向上延伸在绝缘层内部，第二平面导电部分延伸里面 e绝缘层在平面方向上。

3. 发明申请

US20090039374A1 Flip chip type light-emitting element 有权
标题翻译：倒装芯片型发光元件
公开(公告)号：US20090039374A1
公开(公告)日：2009-02-12
申请号：US12222366
申请日：2008-08-07
申请人： Kosuke Yahata , Naoki Nakajo
发明人： Kosuke Yahata , Naoki Nakajo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/44 , H01L33/46
摘要： In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.
摘要翻译：在本发明的倒装型发光元件中，n型接触电极14形成在以梳齿形状露出的n层11上，在整个表面上形成由ITO制成的透光电极15 在透光电极15上以规定的间隔形成p层13的上表面和20个焊盘电极16.焊盘电极16的平面形状具有从圆形中心部16a以十字形突出的四个分支16b 以及通过分支16b彼此连接的相邻的焊盘电极16。

4. 发明授权

US08148736B2 Flip chip type light-emitting element 有权
标题翻译：倒装芯片型发光元件
公开(公告)号：US08148736B2
公开(公告)日：2012-04-03
申请号：US12222366
申请日：2008-08-07
申请人： Kosuke Yahata , Naoki Nakajo
发明人： Kosuke Yahata , Naoki Nakajo
IPC分类号： H01L27/15
CPC分类号： H01L33/387 , H01L33/44 , H01L33/46
摘要： In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.
摘要翻译：在本发明的倒装型发光元件中，n型接触电极14形成在以梳齿形状露出的n层11上，在整个表面上形成由ITO制成的透光电极15 在透光电极15上以规定的间隔形成p层13的上表面和20个焊盘电极16.焊盘电极16的平面形状具有从圆形中心部16a以十字形突出的四个分支16b 以及通过分支16b彼此连接的相邻的焊盘电极16。

5. 发明授权

US08653502B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08653502B2
公开(公告)日：2014-02-18
申请号：US13433195
申请日：2012-03-28
申请人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
发明人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/20 , H01L33/42 , H01L33/46 , H01L2933/0083
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics.
摘要翻译：本发明提供了在特定方向上显示高强度光输出并且提高光提取性能的III族氮化物半导体发光器件。 III族氮化物半导体发光器件包括蓝宝石衬底和具有设置在蓝宝石衬底上并由III族氮化物半导体形成的发光层的层状结构。在蓝宝石衬底的层状结构侧的表面上，以从发光层发出的光产生光强度干涉图案的周期形成台面的二维周期结构。由二维周期结构反射或透射的光具有干涉图案。因此，聚焦在干涉图案中的光强度高的区域的光可以有效地输出到外部，导致光提取性能的提高以及实现期望的方向特性。

6. 发明授权

US08124999B2 Light emitting element and method of making the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08124999B2
公开(公告)日：2012-02-28
申请号：US12458362
申请日：2009-07-09
申请人： Kosuke Yahata , Naoki Nakajo
发明人： Kosuke Yahata , Naoki Nakajo
IPC分类号： H01L33/38
CPC分类号： H01L33/58 , H01L33/44 , H01L33/62 , H01L2224/05001 , H01L2224/05022 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05548 , H01L2224/0557 , H01L2224/05571 , H01L2224/05624 , H01L2224/16 , H01L2924/00014
摘要： A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.
摘要翻译：发光元件包括：第一电极，与第一电极形成在同一侧上的第二电极，并且包括小于第一电极的面积;形成在第一电极上的第一凸起;以及形成在第二电极上的第二凸起;以及包括其顶部的高度高于第一凸起的高度。倒装型发光元件包括扩展电极，扩展电极包括延伸部分，以及形成在扩展电极上的多个中间电极，沿延伸部分的纵向方向布置并且在延伸部分的宽度方向上居中。中间电极被设置为使得其纵向方向上的间距的一半距离等于或短于从中间电极之一到延伸部分的边缘的距离。

7. 发明申请

US20120248406A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20120248406A1
公开(公告)日：2012-10-04
申请号：US13433195
申请日：2012-03-28
申请人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
发明人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
IPC分类号： H01L33/06
CPC分类号： H01L33/20 , H01L33/42 , H01L33/46 , H01L2933/0083
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics.
摘要翻译：本发明提供了在特定方向上显示高强度光输出并且提高光提取性能的III族氮化物半导体发光器件。 III族氮化物半导体发光器件包括蓝宝石衬底和具有设置在蓝宝石衬底上并由III族氮化物半导体形成的发光层的层状结构。在蓝宝石衬底的层状结构侧的表面上，以从发光层发出的光产生光强度干涉图案的周期形成台面的二维周期结构。由二维周期结构反射或透射的光具有干涉图案。因此，聚焦在干涉图案中的光强度高的区域的光可以有效地输出到外部，导致光提取性能的提高以及实现期望的方向特性。

8. 发明申请

US20100012968A1 Light emitting element and method of making the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20100012968A1
公开(公告)日：2010-01-21
申请号：US12458362
申请日：2009-07-09
申请人： Kosuke Yahata , Naoki Nakajo
发明人： Kosuke Yahata , Naoki Nakajo
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/44 , H01L33/62 , H01L2224/05001 , H01L2224/05022 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05548 , H01L2224/0557 , H01L2224/05571 , H01L2224/05624 , H01L2224/16 , H01L2924/00014
摘要： A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.
摘要翻译：发光元件包括：第一电极，与第一电极形成在同一侧上的第二电极，并且包括小于第一电极的面积;形成在第一电极上的第一凸起;以及形成在第二电极上的第二凸起;以及包括其顶部的高度高于第一凸起的高度。倒装型发光元件包括扩展电极，扩展电极包括延伸部分，以及形成在扩展电极上的多个中间电极，沿延伸部分的纵向方向布置并且在延伸部分的宽度方向上居中。中间电极被设置为使得其纵向方向上的间距的一半距离等于或短于从中间电极之一到延伸部分的边缘的距离。

9. 发明授权

US08936950B2 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08936950B2
公开(公告)日：2015-01-20
申请号：US13636392
申请日：2011-03-14
申请人： Naoki Nakajo , Masao Kamiya , Akihiro Honma
发明人： Naoki Nakajo , Masao Kamiya , Akihiro Honma
IPC分类号： H01L21/00 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.
摘要翻译：提高发光效率和可靠性。在第二半导体层108的整个顶表面上形成透明导电膜10，并且在其上施加光刻胶。当去除与第一半导体层104的电极形成部分16对应的上表面上的光致抗蚀剂时，除去光致抗蚀剂以在要去除的部分的边界处逐渐变薄。使用剩余的光致抗蚀剂作为掩模对透明导电膜进行湿式蚀刻，以暴露第二半导体层的一部分。使用剩余的光致抗蚀剂和透明导电膜作为掩模进行干法蚀刻，以暴露形成第一半导体层的一部分的电极。在使用剩余光刻胶作为掩模的干蚀刻中曝光的透明导电膜的一部分被湿式蚀刻。剩下的光刻胶被消除。

10. 发明授权

US07244957B2 Group III nitride compound semiconductor light-emitting device and method for producing the same 有权
标题翻译： III族氮化物化合物半导体发光器件及其制造方法
公开(公告)号：US07244957B2
公开(公告)日：2007-07-17
申请号：US11063747
申请日：2005-02-24
申请人： Naoki Nakajo , Masao Kamiya , Tetsuya Taki
发明人： Naoki Nakajo , Masao Kamiya , Tetsuya Taki
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/32
摘要： In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.
摘要翻译：在从具有Mg掺杂的Mg掺杂的p型GaN制成的III族氮化物化合物半导体投影部150的半导体平面的高度为1.5μm的III族氮化物化合物半导体发光装置中， 8×10 9 / cm 3，并且通过选择性生长形成，形成在p型接触层（第二p层）108上。并且通过金属沉积在其上形成透光性电极110。 III族氮化物化合物半导体投影部150形成用于输出光的坚固的表面，并且实际临界角被加宽，这能够提高发光效率。并且由于不采用蚀刻来形成耐磨性，所以驱动电压不增加。

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