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    • 4. 发明授权
    • UV light generator
    • 紫外光发生器
    • US08270069B2
    • 2012-09-18
    • US12841941
    • 2010-07-22
    • Hsin-Chia SuChien-Ming HuangYao-Wun JhangChih-Li Chen
    • Hsin-Chia SuChien-Ming HuangYao-Wun JhangChih-Li Chen
    • G02F1/37G02F1/355
    • G02F1/37G02F2201/16G02F2201/17
    • A UV light generator for receiving a baseband light beam from a baseband light source is provided. The UV light generator includes a first lens unit, a second lens unit, a first frequency doubling crystal and a second frequency doubling crystal. The baseband light beam from the baseband light source passes through the first lens unit. The first lens unit and the second lens unit control a minimum of baseband light spot position and a minimum of second harmonic light spot position. The first frequency doubling crystal is disposed between the first lens unit and the second lens unit, and located on the minimum of baseband light spot position. The second frequency doubling crystal is disposed between the first lens unit and the second lens unit, and located on the minimum of second harmonic light spot position.
    • 提供了用于从基带光源接收基带光束的UV光发生器。 UV光发生器包括第一透镜单元,第二透镜单元,第一倍频晶体和第二倍频晶体。 来自基带光源的基带光束通过第一透镜单元。 第一透镜单元和第二透镜单元控制最小的基带光点位置和最小二次谐波光点位置。 第一倍频晶体设置在第一透镜单元和第二透镜单元之间,并且位于基带光点位置的最小值上。 第二倍频晶体设置在第一透镜单元和第二透镜单元之间,并且位于第二谐波光点位置的最小值上。
    • 10. 发明申请
    • Method of forming three-dimensional lithographic pattern
    • 形成三维光刻图案的方法
    • US20070178410A1
    • 2007-08-02
    • US11453764
    • 2006-06-14
    • Chiang-Lin ShihChih-Li Chen
    • Chiang-Lin ShihChih-Li Chen
    • G03F7/20
    • G03F7/2002G03F1/50H01L21/0274H01L21/76807
    • A method of forming a three-dimensional lithographic pattern is provided. The method includes providing a substrate. A first photoresist layer is formed on the substrate. The first photoresist layer corresponds to a first exposure removal dose. A second photoresist layer is formed on the first photoresist layer. The second photoresist layer corresponds to a second exposure removal dose, which is different from the first exposure removal dose. A reticle with multiple regions of different light transmittances is provided. Through the reticle, the first and second photoresist layers are exposed to form a first removable region in the first photoresist layer and a second removable region in the second photoresist layer. The second removable region is different from the first removable region. The first and second photoresist layers are then developed to remove the first and second removable regions.
    • 提供了形成三维光刻图案的方法。 该方法包括提供基板。 在基板上形成第一光致抗蚀剂层。 第一光致抗蚀剂层对应于第一曝光去除剂量。 在第一光致抗蚀剂层上形成第二光致抗蚀剂层。 第二光致抗蚀剂层对应于与第一曝光去除剂量不同的第二曝光去除剂量。 提供具有不同透光率的多个区域的掩模版。 通过掩模版,第一和第二光致抗蚀剂层被暴露以在第一光致抗蚀剂层中形成第一可移除区域,并在第二光致抗蚀剂层中形成第二可除去区域。 第二可移除区域与第一可移除区域不同。 然后显影第一和第二光致抗蚀剂层以除去第一和第二可除去区域。