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    • 2. 发明申请
    • AUTOMATIC IDENTIFICATION OF SYSTEMATIC REPEATING DEFECTS IN SEMICONDUCTOR PRODUCTION
    • 自动识别半导体生产中的系统重复缺陷
    • US20120023464A1
    • 2012-01-26
    • US13007556
    • 2011-01-14
    • Paul Kuang Chi LinDong KangYong Gang WangYulei Zhang
    • Paul Kuang Chi LinDong KangYong Gang WangYulei Zhang
    • G06F17/50
    • G03F1/84G01N21/8851G01N21/9501G01N21/956G01N2021/8877
    • A method includes capturing an image of the pattern using one or more scans across a surface of the partially completed wafer. The method includes processing information associated with the captured image of the pattern in a first format (e.g., pixel domain) into a second format, e.g., transform domain. The method includes determining defect information associated with the image of the pattern in the second format and processing the defect information (e.g., wafer identification, product identification, layer information, x-y die scanned) to identify at least one defect associated with a spatial location of a repeating pattern on the partially completed wafer provided by a reticle. The method includes identifying the reticle associated with the defect and a stepper associated with the reticle having the defect and ceasing operation of the stepper. The damaged reticle is replaced, and the process resumes using a replaced reticle.
    • 一种方法包括使用在部分完成的晶片的表面上的一次或多次扫描来捕获图案的图像。 该方法包括以与第一格式(例如,像素域)中的图案的捕获图像相关联的信息处理成第二格式,例如变换域。 该方法包括确定与第二格式的图案的图像相关联的缺陷信息,并处理缺陷信息(例如,晶片识别,产品识别,层信息,xy模扫描),以识别与空间位置相关联的至少一个缺陷 在由光罩提供的部分完成的晶片上的重复图案。 所述方法包括识别与所述缺陷相关联的掩模版和与所述掩模版相关联的具有所述缺陷并且所述步进器停止操作的步进器。 损坏的标线被更换,并且使用更换的掩模版恢复工艺。
    • 4. 发明授权
    • Automatic identification of systematic repeating defects in semiconductor production
    • 自动识别半导体生产中的系统重复缺陷
    • US08312395B2
    • 2012-11-13
    • US13007556
    • 2011-01-14
    • Paul Kuang Chi LinDong KangYong Gang WangYulei Zhang
    • Paul Kuang Chi LinDong KangYong Gang WangYulei Zhang
    • G06F17/50
    • G03F1/84G01N21/8851G01N21/9501G01N21/956G01N2021/8877
    • A method includes capturing an image of the pattern using one or more scans across a surface of the partially completed wafer. The method includes processing information associated with the captured image of the pattern in a first format (e.g., pixel domain) into a second format, e.g., transform domain. The method includes determining defect information associated with the image of the pattern in the second format and processing the defect information (e.g., wafer identification, product identification, layer information, x-y die scanned) to identify at least one defect associated with a spatial location of a repeating pattern on the partially completed wafer provided by a reticle. The method includes identifying the reticle associated with the defect and a stepper associated with the reticle having the defect and ceasing operation of the stepper. The damaged reticle is replaced, and the process resumes using a replaced reticle.
    • 一种方法包括使用在部分完成的晶片的表面上的一次或多次扫描来捕获图案的图像。 该方法包括以与第一格式(例如,像素域)中的图案的捕获图像相关联的信息处理成第二格式,例如变换域。 该方法包括确定与第二格式的图案的图像相关联的缺陷信息,并处理缺陷信息(例如,晶片识别,产品识别,层信息,xy模扫描),以识别与空间位置相关联的至少一个缺陷 在由光罩提供的部分完成的晶片上的重复图案。 所述方法包括识别与所述缺陷相关联的掩模版和与所述掩模版相关联的具有所述缺陷并且所述步进器停止操作的步进器。 损坏的标线被更换,并且使用更换的掩模版恢复工艺。