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1. 发明申请

US20160363920A1 INTELLIGENT CONTROL MODULE, INTELLIGENT LIGHTING CEILING FAN, INTELLIGENT LIGHTING CEILING FAN REMOTE CONTROLLER AND INTELLIGENT LIGHTING CEILING FAN CONTROL METHOD 审中-公开
标题翻译：智能控制模块，智能照明天花灯，智能照明天花灯遥控器和智能照明天花灯风扇控制方法
公开(公告)号：US20160363920A1
公开(公告)日：2016-12-15
申请号：US14737777
申请日：2015-06-12
申请人： Shih-Yun CHEN , Chi-Han JAO , Chun-Hung CHEN
发明人： Shih-Yun CHEN , Chi-Han JAO , Chun-Hung CHEN
IPC分类号： G05B19/042 , H05B37/02
CPC分类号： G05B19/0426 , H05B37/0272 , Y02B20/48
摘要： An intelligent lighting ceiling fan control method comprises following steps: receiving a first lighting ceiling fan control signal; transferring first lighting ceiling fan control signal to a lighting ceiling fan control module for adjusting the brightness of a lighting device or the rotation rate of a fan device; configuring a timing control profile data according to a user operation; generating and transferring a second lighting ceiling fan control signal to the lighting ceiling fan control module according to the timing control profile data for adjusting the brightness of the lighting device or the rotation rate of the fan device when a trigger time is past. This application can effectively make the lighting ceiling fan automatically operate according to the trigger time, and provide better user experiences to the user.
摘要翻译：一种智能照明吊扇控制方法，包括以下步骤：接收第一吊灯吊扇控制信号; 将第一照明吊扇控制信号传送到照明吊扇控制模块，用于调节照明装置的亮度或风扇装置的转速; 根据用户操作配置定时控制简档数据; 根据用于调节照明装置的亮度的定时控制简档数据或者当触发时间过去时风扇装置的旋转速率，将第二照明吊扇控制信号发送到照明吊扇控制模块。该应用可以有效地使照明吊扇根据触发时间自动运行，为用户提供更好的用户体验。

2. 发明申请

US20200086071A1 RESPIRATORY MASK 审中-公开
公开(公告)号：US20200086071A1
公开(公告)日：2020-03-19
申请号：US16563966
申请日：2019-09-09
申请人： Shu-Chi LIN , Chih-Tsan CHIEN , Chun-Hung CHEN , Sheng-Wei LIN , Pi-Kai LEE , Yu-Chen LIU , Chia-Wei HUANG
发明人： Shu-Chi LIN , Chih-Tsan CHIEN , Chun-Hung CHEN , Sheng-Wei LIN , Pi-Kai LEE , Yu-Chen LIU , Chia-Wei HUANG
IPC分类号： A61M16/06 , A61M16/08
摘要： Herein disclosed is a respiratory mask comprising a nose cushion assembly. The nose cushion assembly comprises a base body and a buffering piece. The base body is defined as having a base intake portion and a base connection portion. The base body comprises an air routing piece disposed at the inside of the base body and having a partitioning wall and a wall connection piece. The inside of the partitioning wall encloses an air intake zone. The wall connection piece is disposed outside the partitioning wall and connects with the base intake portion. Between the partitioning wall and the base intake portion there is defined an air outtake zone. The air intake zone is approximately at the center of the base intake portion. The buffering piece connects with the base connection portion and encloses a nose containing room, which in turn connects with the inside of the base body.

3. 发明申请

US20120215322A1 ARTIFICIAL DURA BIOMEDICAL DEVICE AND BRAIN SURGERY METHOD UTILIZING THE SAME 有权
标题翻译：人造DURA生物医学装置和使用其的脑手术方法
公开(公告)号：US20120215322A1
公开(公告)日：2012-08-23
申请号：US13458903
申请日：2012-04-27
申请人： Chun-Jen LIAO , Sheng-Hong TSENG , Huang-Chien LIANG , Chun-Hung CHEN , Yi-Chun SU
发明人： Chun-Jen LIAO , Sheng-Hong TSENG , Huang-Chien LIANG , Chun-Hung CHEN , Yi-Chun SU
IPC分类号： A61F2/02
CPC分类号： A61F2/2875 , A61B17/688 , A61F2/2846 , A61F2/30907 , A61F2002/285 , A61F2002/30433 , A61F2002/30448 , A61F2002/30462 , A61F2220/0041 , A61F2220/005 , A61F2220/0075 , A61L27/3675
摘要： An artificial dura biomedical device and a brain surgery method utilizing the same are disclosed. The steps includes: fixing an artificial dura to a partial skull; and fixing the partial skull with the artificial dura to a cut hole of a whole skull. The artificial dura biomedical device includes an artificial dura and a connecting element. The connecting element fixes the partial skull with the artificial dura.
摘要翻译：公开了一种人造硬脑膜生物医学装置和利用其的脑手术方法。步骤包括：将人造硬膜固定在部分头骨上; 并将具有人造硬脑膜的部分头骨固定到整个头骨的切割孔。人造硬脑膜生物医学装置包括人造硬膜和连接元件。连接元件用人造硬脑膜固定部分头骨。

4. 发明申请

US20120174917A1 PRESS-TYPE MEDICAL NEBULIZER AND PRESSING MEANS THEREOF 有权
标题翻译：新闻类型医疗基础设施及其压力装置
公开(公告)号：US20120174917A1
公开(公告)日：2012-07-12
申请号：US13267858
申请日：2011-10-06
申请人： Chun-Hung CHEN , Mu-Hua Huang
发明人： Chun-Hung CHEN , Mu-Hua Huang
IPC分类号： A61M11/02
CPC分类号： A61M11/06 , A61M15/0015 , A61M15/0018 , A61M15/002
摘要： In a press-type medical nebulizer and a pressing means thereof, the nebulizer includes a medicament container having an intake channel and a medical spray generator. The pressing means includes a base, a pressing element and a switching element. The base has a gas-delivering tube, a gas-releasing hole and a trough. The pressing element comprises an operating arm pivotally connected into the trough and a valve for closing the gas-releasing hole. The switching element is slidingly provided on the operating arm to be selectively engaged into the trough for fixing the operating arm. When the switching element is engaged into the trough, the switching element causes the valve to close the gas-releasing hole, so that the pressurized gas can continuously flow through the gas-delivering tube and enter the intake channel. By this arrangement, the user needs not to press the pressing means repeatedly, which is convenient and labor-saving.
摘要翻译：在压力式医用雾化器及其按压装置中，喷雾器包括具有进气通道和医用喷雾发生器的药物容器。按压装置包括基座，按压元件和开关元件。底座具有气体输送管，气体释放孔和槽。按压元件包括枢转地连接到槽中的操作臂和用于关闭气体释放孔的阀。开关元件滑动地设置在操作臂上，以选择性地接合到用于固定操作臂的槽中。当开关元件接合到槽中时，开关元件使阀关闭气体释放孔，使得加压气体可以连续地流过气体输送管并进入进气通道。通过这种布置，用户不需要重复按压按压装置，这是方便和省力的。

5. 发明申请

US20120092806A1 PROTECTION STRUCTURE FOR METAL-OXIDE-METAL CAPACITOR 有权
标题翻译：金属氧化物电容器的保护结构
公开(公告)号：US20120092806A1
公开(公告)日：2012-04-19
申请号：US12984731
申请日：2011-01-05
申请人： Wei-Chun HUA , Chung-Long CHANG , Chun-Hung CHEN , Chih-Ping CHAO , Jye-Yen CHENG , Hua-Chou TSENG
发明人： Wei-Chun HUA , Chung-Long CHANG , Chun-Hung CHEN , Chih-Ping CHAO , Jye-Yen CHENG , Hua-Chou TSENG
IPC分类号： H01G4/005 , H01G7/00
CPC分类号： H01G4/005 , H01L23/5223 , H01L28/60 , H01L2924/0002 , Y10T29/43 , H01L2924/00
摘要： A capacitor structure includes first and second sets of electrodes and a plurality of line plugs. The first set of electrodes has a first electrode and a second electrode formed in a first metallization layer among a plurality of metallization layers, wherein the first electrode and the second electrode are separated by an insulation material. The second set of electrodes has a third electrode and a fourth electrode formed in a second metallization layer among the plurality of metallization layers, wherein the third electrode and the fourth electrode are separated by the insulation material. The line plugs connect the second set of electrodes to the first set of electrodes.
摘要翻译：电容器结构包括第一和第二组电极和多个线插头。第一组电极具有形成在多个金属化层中的第一金属化层中的第一电极和第二电极，其中第一电极和第二电极被绝缘材料分开。第二组电极具有形成在多个金属化层之间的第二金属化层中的第三电极和第四电极，其中第三电极和第四电极被绝缘材料隔开。线插头将第二组电极连接到第一组电极。

6. 发明申请

US20120104471A1 CONTACT STRUCTURE FOR REDUCING GATE RESISTANCE AND METHOD OF MAKING THE SAME 有权
标题翻译：用于降低栅极电阻的接触结构及其制造方法
公开(公告)号：US20120104471A1
公开(公告)日：2012-05-03
申请号：US12913982
申请日：2010-10-28
申请人： Chung-Long CHANG , Chih-Ping CHAO , Chun-Hung CHEN , Hua-Chao TSENG , Jye-Yen CHENG , Harry-Hak-Lay CHUANG
发明人： Chung-Long CHANG , Chih-Ping CHAO , Chun-Hung CHEN , Hua-Chao TSENG , Jye-Yen CHENG , Harry-Hak-Lay CHUANG
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/76838 , H01L21/76807 , H01L21/76816 , H01L23/485 , H01L23/53228 , H01L23/53242 , H01L23/53257 , H01L29/665 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a gate on a substrate with source/drain (S/D) regions adjacent to the gate. A first dielectric layer overlays the gate and the S/D regions, the first dielectric layer having first contact holes over the S/D regions with first contact plugs formed of a first material and the first contact plugs coupled to respective S/D regions. A second dielectric layer overlays the first dielectric layer and the first contact plugs. A second contact hole formed in the first and second dielectric layers is filled with a second contact plug formed of a second material. The second contact plug is coupled to the gate and interconnect structures formed in the second dielectric layer, the interconnect structures coupled to the first contact plugs. The second material is different from the first material, and the second material has an electrical resistance lower than that of the first material.
摘要翻译：一种具有栅极的半导体器件，具有与栅极相邻的源极/漏极（S / D）区域的衬底。第一介电层覆盖栅极和S / D区域，第一介电层在S / D区域上具有第一接触孔，第一接触插塞由第一材料形成，第一接触插塞连接到相应的S / D区域。第二电介质层覆盖第一电介质层和第一接触插塞。形成在第一和第二电介质层中的第二接触孔填充有由第二材料形成的第二接触插塞。第二接触插塞耦合到形成在第二介电层中的栅极和互连结构，互连结构耦合到第一接触插塞。第二材料与第一材料不同，第二材料的电阻低于第一材料的电阻。

7. 发明申请

US20110253134A1 PRESS-TYPE MEDICAL AEROSOL GENERATING DEVICE AND PRESSING MECHANISM FOR THE SAME 审中-公开
标题翻译：新型医用气雾发生装置及其相应的压力机构
公开(公告)号：US20110253134A1
公开(公告)日：2011-10-20
申请号：US13034766
申请日：2011-02-25
申请人： Chun-Hung CHEN , Mu-Hua Huang
发明人： Chun-Hung CHEN , Mu-Hua Huang
IPC分类号： A61M11/00
CPC分类号： A61M11/06 , A61M15/0015 , A61M15/0018 , A61M16/1055 , A61M16/1065
摘要： A press-type medical aerosol generating device includes a medicament storage container (100), a nebulizer (200) provided in the medicament storage container (100) and a pressing mechanism (300). The pressing mechanism (300) includes a base (310) and a pressing element (320). The base (310) has a gas conduit (311) inserted into the nebulizer (200) and a pressure relief hole (312) communicating with the gas conduit (311). The pressing element (320) includes an operating arm (321), a valve (322) and an elastic arm (323) abutting the medicament storage container (100). When the operating arm (321) is turned to rotate, the valve (322) closes the pressure relief hole (312), so that the nebulizer (200) aerosolizes the medicament. When the operating arm (321) is released, the elastic arm (323) causes the valve (322) to open the pressure relief hole (312), so that the compressed gas can be exhausted to the outside to thereby stop the aerosolizing of the medicament. Thus, the waste of medicament is reduced and the medicament-delivering efficiency is increased with a better therapeutic effect.
摘要翻译：一种按压型医用气溶胶发生装置，包括药剂储存容器（100），设置在药剂储存容器（100）中的喷雾器（200）和按压机构（300）。按压机构（300）包括基座（310）和按压元件（320）。基部（310）具有插入喷雾器（200）中的气体导管（311）和与气体导管（311）连通的压力释放孔（312）。按压元件（320）包括操作臂（321），阀（322）和抵靠药剂储存容器（100）的弹性臂（323）。当操作臂（321）旋转时，阀（322）关闭压力释放孔（312），使得喷雾器（200）使药物雾化。当操作臂（321）被释放时，弹性臂（323）使阀（322）打开压力释放孔（312），使得压缩气体可以排出到外部，从而停止药物。因此，减少药物的浪费，并且以更好的治疗效果增加药物递送效率。

8. 发明申请

US20100193469A1 METHOD FOR MANUFACTURING MICRO/NANO THREE-DIMENSIONAL STRUCTURE 审中-公开
标题翻译：制造微米/纳米三维结构的方法
公开(公告)号：US20100193469A1
公开(公告)日：2010-08-05
申请号：US12699892
申请日：2010-02-04
申请人： Yung-Chun LEE , Chun-Hung CHEN , Te-Hui YU
发明人： Yung-Chun LEE , Chun-Hung CHEN , Te-Hui YU
IPC分类号： B44C1/22
CPC分类号： B44C1/22 , B81C1/0046
摘要： A method for manufacturing a micro/nano three-dimensional structure including the following steps is described. A mold is provided, and a pattern structure including a plurality of convex portions and concave portions is set in the mold. A transfer material layer including a first portion on the convex portions and a second portion on the concave portions is formed. A flexible substrate is disposed on the mold and contacts with the first portion of the transfer material layer. A heating step is performed to partially heat the flexible substrate through the first portion. A pressure is applied on the flexible substrate to adhere or press the first portion to the flexible substrate. The mold is removed. An etching step is performed on the flexible substrate by using the first portion of the transfer material layer as a mask to form a micro/nano three-dimensional structure in the flexible substrate.
摘要翻译：描述了包括以下步骤的微/纳米三维结构的制造方法。设置模具，并且在模具中设置包括多个凸部和凹部的图案结构。形成包括在凸部上的第一部分和凹部上的第二部分的转印材料层。柔性基板设置在模具上并与转印材料层的第一部分接触。执行加热步骤以通过第一部分部分地加热柔性基板。在柔性基板上施加压力以将第一部分粘附或压到柔性基板上。去除模具。通过使用转印材料层的第一部分作为掩模在柔性基板上进行蚀刻步骤，以在柔性基板中形成微/纳米三维结构。

9. 发明申请

US20120148069A1 MICROPHONE ARRAY STRUCTURE ABLE TO REDUCE NOISE AND IMPROVE SPEECH QUALITY AND METHOD THEREOF 有权
标题翻译：麦克风阵列结构可以减少噪音并提高语音质量及其方法
公开(公告)号：US20120148069A1
公开(公告)日：2012-06-14
申请号：US13210620
申请日：2011-08-16
申请人： Mingsian R. BAI , Chun-Hung CHEN
发明人： Mingsian R. BAI , Chun-Hung CHEN
IPC分类号： H04B15/00
CPC分类号： H04R1/1083 , H04R3/005 , H04R2430/20
摘要： The present invention discloses a microphone array structure able to reduce noise and improve speech quality and a method thereof. The method of the present invention comprises steps: using at least two microphone to receive at least two microphone signals each containing a noise signal and a speech signal; using FFT modules to transform the microphone signals into frequency-domain signals; calculating an included angle between a speech signal and a noise signal of the microphone signal, and selecting a phase difference estimation algorithm, a noise reduction algorithm or both to reduce noise according to the included angle; if the phase difference estimation algorithm is used, calculating phase difference of the microphone signals to obtain a time-space domain mask signal; and multiplying the mask signal and the average of the microphone signals to obtain the speech signals of the microphone signals. Thereby is eliminated noise and improve speech quality.
摘要翻译：本发明公开了一种能够降低噪声并提高语音质量的麦克风阵列结构及其方法。本发明的方法包括以下步骤：使用至少两个麦克风接收至少两个包含噪声信号和语音信号的麦克风信号; 使用FFT模块将麦克风信号转换为频域信号; 计算麦克风信号的语音信号和噪声信号之间的夹角，并且选择相位差估计算法，降噪算法或两者以根据夹角来减少噪声; 如果使用相位差估计算法，则计算麦克风信号的相位差以获得时空域掩码信号; 并且将掩模信号和麦克风信号的平均值相乘以获得麦克风信号的语音信号。从而消除噪音，提高语音质量。

10. 发明申请

US20120119306A1 METAL GATE TRANSISTOR, INTEGRATED CIRCUITS, SYSTEMS, AND FABRICATION METHODS THEREOF 有权
标题翻译：金属栅极晶体管，集成电路，系统及其制造方法
公开(公告)号：US20120119306A1
公开(公告)日：2012-05-17
申请号：US12948184
申请日：2010-11-17
申请人： Chien-Chih HO , Chih-Ping CHAO , Hua-Chou TSENG , Chun-Hung CHEN , Chia-Yi SU , Alex KALNITSKY , Jye-Yen CHENG , Harry-Hak-Lay CHUANG
发明人： Chien-Chih HO , Chih-Ping CHAO , Hua-Chou TSENG , Chun-Hung CHEN , Chia-Yi SU , Alex KALNITSKY , Jye-Yen CHENG , Harry-Hak-Lay CHUANG
IPC分类号： H01L27/088 , H01L21/28
CPC分类号： H01L23/481 , H01L21/76802 , H01L21/76816 , H01L21/76895 , H01L21/823425 , H01L21/823475 , H01L21/823842 , H01L21/823871 , H01L27/088 , H01L29/0653 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A method of forming an integrated circuit structure includes providing a gate strip in an inter-layer dielectric (ILD) layer. The gate strip comprises a metal gate electrode over a high-k gate dielectric. An electrical transmission structure is formed over the gate strip and a conductive strip is formed over the electrical transmission structure. The conductive strip has a width greater than a width of the gate strip. A contact plug is formed above the conductive strip and surrounded by an additional ILD layer.
摘要翻译：形成集成电路结构的方法包括在层间电介质（ILD）层中提供栅极条。栅极条包括在高k栅极电介质上的金属栅电极。在栅极条上形成电传输结构，并且在电传输结构上形成导电条。导电条的宽度大于栅极条的宽度。接触塞形成在导电条的上方并被另外的ILD层包围。

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