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    • 2. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20120018762A1
    • 2012-01-26
    • US13260750
    • 2010-04-05
    • Osamu Abe
    • Osamu Abe
    • H01L33/60H01L31/0232
    • H01L33/62H01L23/49568H01L33/60H01L33/642H01L33/647H01L2224/48091H01L2224/48247H01L2933/0075H01L2924/00014
    • This disclosure provides a semiconductor device that can demonstrate an efficient heat releasing effect. The device includes a mount part 11 having a mount surface 6 on which a semiconductor device 3 is mounted, and a reflection part 12 having a reflection surface 7 on which light is reflected around the semiconductor device 3, and a heat releasing part 13 having a first heat releasing surface 8 for releasing heat. The mount part 11, the reflection part 12, and the heat releasing part 13 are integrally formed of metal. Therefore, heat generated in the semiconductor device 3 is promptly conducted to the heat releasing part 13 that is integrally formed with the mount part 11, thereby the heat is effectively released from the first heat releasing surface 8. In addition, heat accumulated in the reflection part 12 by light being irradiated to the reflection surface 7 is also promptly conducted to the heat releasing part 13 that is integrally formed with the reflection part 12, thereby the heat is effectively released from the first heat releasing surface 8.
    • 本公开提供了可以显示出有效的散热效果的半导体器件。 该装置包括具有安装表面6的安装部分11,半导体装置3安装在该安装表面6上,反射部分12具有反射表面7,反射表面7在半导体器件3周围反射光;散热部分13具有 第一放热表面8用于释放热量。 安装部11,反射部12和散热部13由金属一体形成。 因此,半导体装置3中产生的热量迅速地传导到与安装部分11一体形成的散热部分13,从而有效地从第一散热表面8释放热量。此外,积聚在反射中的热量 部分12被照射到反射表面7的光也被迅速地传导到与反射部分12一体形成的散热部分13,从而有效地从第一散热表面8释放热量。
    • 4. 发明授权
    • Band gap circuit
    • 带隙电路
    • US07098729B2
    • 2006-08-29
    • US10647468
    • 2003-08-26
    • Osamu Abe
    • Osamu Abe
    • G05F1/575G05F1/46
    • G05F3/30
    • A band gap circuit, including a differential amplifier. In response to fluctuation of the voltage on the band gap circuit output terminal VOUT, a potential difference occurs at an inverting input terminal and a noninverting input terminal of the differential amplifier. A transistor, connected to the output terminal VOUT, ground, an output terminal of the differential amplifier, causes excess current from the output terminal VOUT to flow to ground in response to fluctuation of the potential at the output terminal of the differential amplifier. A transistor that has a resistive component and a resistor that has a capacitive component are connected between a power supply voltage VDD and the output terminal VOUT.
    • 带隙电路,包括差分放大器。 响应于带隙电路输出端子VOUT上的电压的波动,在差分放大器的反相输入端子和同相输入端子处产生电位差。 连接到输出端子VOUT的晶体管接地,差分放大器的输出端子使得来自输出端子VOUT的过大电流响应于差分放大器的输出端子处的电位的波动而流到地。 具有电阻分量的晶体管和具有电容分量的电阻器连接在电源电压VDD和输出端子VOUT之间。
    • 6. 发明授权
    • Light emitting gallium phosphide device
    • 发光磷化镓器件
    • US3997907A
    • 1976-12-14
    • US545347
    • 1975-01-30
    • Tadao NakamuraTetsuo SadamasaOsamu Abe
    • Tadao NakamuraTetsuo SadamasaOsamu Abe
    • H01L33/00H01L33/44
    • H01L33/44H01L33/00
    • A light emitting gallium phosphide device comprising a gallium phosphide (GaP) substrate of one conductivity type and at least one GaP layer of the opposite conductivity type formed on said substrate so as to form a P-N junction, wherein, the GaP layer, when impressed with forward voltage, forms light emitting regions, as viewed from above; and a light absorbing layer prepared from noncrystalline (amorphous) or polycrystalline silicon is mounted on at least one plane selected from the group consisting of the back side of the GaP substrate, those portions of the surface of the GaP substrate on which the GaP layer is not formed and the other portions of the surface of the GaP layer than the light emitting regions thereof, thereby attaining a very favorably acceptable monolithic display in high luminance and distinct contrast.
    • 一种发光磷化镓器件,包括一种导电类型的磷化镓(GaP)衬底和形成在所述衬底上的至少一个具有相反导电类型的GaP层,以便形成PN结,其中,GaP层当被 正向电压,从上方观察形成发光区域; 并且从非晶(非晶)或多晶硅制备的光吸收层安装在选自GaP衬底的背面,GaP衬底的其上GaP层的表面的那些部分的至少一个平面 没有形成GaP层的表面的其它部分比其发光区域,从而在高亮度和明显的对比度下获得非常有利的可接受的单片显示器。