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1. 发明授权

US06353078B1 Polyurethane adhesive, method for use in bonding, and use of mixture 失效
标题翻译：聚氨酯胶粘剂，粘合方法和混合物的使用
公开(公告)号：US06353078B1
公开(公告)日：2002-03-05
申请号：US09463793
申请日：2000-01-27
申请人： Shigeru Murata , Masahiko Yasuda , Tetsuya Nakajima
发明人： Shigeru Murata , Masahiko Yasuda , Tetsuya Nakajima
IPC分类号： C08G1842
CPC分类号： C09J175/06 , C08G18/4216 , C08L2666/36 , C09J167/02 , Y10S528/905
摘要： The present invention provides an adhesive comprising a polyester polyol or polyurethane polyol possessing structural units represented by the following general formula (I) within its molecular structure, and an organic polyisocyanate in which the isocyanate groups may be protected: wherein R1 and R2 are the same or different and each represents lower alkyl. The adhesive of the present invention exhibits an excellent initial adhesion strength; and provides adhered objects that exhibit an excellent permanent adhesion strength, hot water resistance, flexibility, flexibility at a low temperature, and fatigue resistance, and is useful in adhering plastic, metal, and the like. In addition, the present invention provides a method of mixing the aforementioned components and using the mixture for adhesion, and a use of the mixture of the aforementioned components.
摘要翻译：本发明提供一种粘合剂，其包含在其分子结构中具有由以下通式（I）表示的结构单元的聚酯多元醇或聚氨酯多元醇，其中异氰酸酯基可被保护的有机多异氰酸酯：其中R1和R2相同或不同，并且各自表示低级烷基。本发明的粘合剂表现出优异的初始粘合强度; 并且提供具有优异的永久粘合强度，耐热水性，柔软性，低温柔韧性和耐疲劳性的粘合物，并且可用于粘附塑料，金属等。此外，本发明提供了混合上述组分并使用该混合物进行粘合的方法，以及上述组分的混合物的用途。

2. 发明授权

US06087466A Polyurethane and polyester polyol 失效
标题翻译：聚氨酯和聚酯多元醇
公开(公告)号：US06087466A
公开(公告)日：2000-07-11
申请号：US194394
申请日：1998-11-25
申请人： Shigeru Murata , Yukio Inaba , Masahiko Yasuda , Tetsuya Nakajima
发明人： Shigeru Murata , Yukio Inaba , Masahiko Yasuda , Tetsuya Nakajima
IPC分类号： C08G18/42 , C08G18/66 , C08G63/16 , C07C69/34
CPC分类号： C08G18/664 , C08G18/4238 , C08G63/16
摘要： The present invention provides a polyester polyol comprising within its molecular structure both structural units respectively represented by the following general formula (I) and general formula (II). In addition, the present invention provides a polyurethane using the polyester polyol of the present invention. This polyurethane exhibits excellent resistance to hydrolysis, resistance to alkali, mechanical strength, and the like. ##STR1## (wherein R.sup.1 and R.sup.2 are the same or different and each represents lower alkyl having 1 to 8 carbon atoms), ##STR2## (wherein R.sup.3 and R.sup.4 are the same or different and each represents lower alkyl having 1 to 8 carbon atoms).
摘要翻译： PCT No.PCT / JP98 / 01061 Sec。 371日期：1998年11月25日 102（e）1998年11月25日日期PCT提交1998年3月13日PCT公布。 WO98 / 44014 PCT公开号日本1998年8月10日本发明提供了一种聚酯多元醇，其分子结构包含分别由以下通式（I）和通式（II）表示的两个结构单元。此外，本发明提供使用本发明的聚酯多元醇的聚氨酯。该聚氨酯具有优异的耐水解性，耐碱性，机械强度等优点。（其中R 1和R 2相同或不同，并且各自表示具有1至8个碳原子的低级烷基），（其中R 3和R 4相同或不同并且各自表示具有1至8个碳原子的低级烷基）。

3. 发明申请

US20150202681A1 UP-DRAWING CONTINUOUS CASTING APPARATUS AND UP-DRAWING CONTINUOUS CASTING METHOD 审中-公开
标题翻译：上图连续铸造装置和上拉连续铸造方法
公开(公告)号：US20150202681A1
公开(公告)日：2015-07-23
申请号：US14416163
申请日：2013-10-11
申请人： Yuichi Furukawa , Tsukasa Kato , Keiichi Morita , Tetsuya Nakajima , Jun Yaokawa , Yasushi Iwata , Yoshio Sugiyama
发明人： Yuichi Furukawa , Tsukasa Kato , Keiichi Morita , Tetsuya Nakajima , Jun Yaokawa , Yasushi Iwata , Yoshio Sugiyama
IPC分类号： B22D11/14 , B22D11/12 , B22D11/041 , B22D11/124
CPC分类号： B22D11/141 , B22D11/01 , B22D11/041 , B22D11/12 , B22D11/124 , B22D11/145
摘要： An up-drawing continuous casting apparatus includes a holding furnace which holds molten metal, a guide-out member which guides the molten metal out from a surface of the molten metal held in the holding furnace, a shape determining member which is arranged to adjoin the surface of the molten metal and allows the molten metal guided out by the guide-out member to pass through the shape determining member to define a shape of a cross section of a casting, a cooling portion which cools the molten metal after the molten metal passes through the shape determining member, and an impact imparting portion which imparts an impact to the guide-out member or the casting.
摘要翻译：上拉式连续铸造装置包括保持熔融金属的保持炉，将熔融金属从保持在保持炉中的熔融金属的表面引出的导出构件，形状确定构件，其布置成邻接熔融金属的表面，并且允许由引导构件引出的熔融金属通过形状确定构件以限定铸件的横截面的形状，在熔融金属通过之后冷却熔融金属的冷却部分通过形状确定构件和对引导构件或铸件施加冲击的冲击赋予部分。

4. 发明授权

US08417424B2 Control system for working machine 有权
标题翻译：作业机控制系统
公开(公告)号：US08417424B2
公开(公告)日：2013-04-09
申请号：US12532536
申请日：2008-09-12
申请人： Yasuo Fujii , Tetsuya Nakajima , Tamaki Naka , Shigeki Hayashi , Yukifum Yamanaka
发明人： Yasuo Fujii , Tetsuya Nakajima , Tamaki Naka , Shigeki Hayashi , Yukifum Yamanaka
IPC分类号： G06F7/00
CPC分类号： A01D41/1274 , A01B79/005 , F02D29/02 , G05B2219/25072 , G05B2219/25094
摘要： A plurality of control units capable of communicating with each other via a data communication network (TU) are disposed in distribution. One of the plurality of control units is set as an information management control unit (H1) having writable nonvolatile storing means. Upon activation with power supply thereof, the information management control unit (H1) executes a control management information distributing process for transmitting control management information stored in a memory (50) to storage object control units (H2-H6) via the communication network (TU). Upon activation with power supply thereto, each of the storage object control units (H2-H6) executes a control management information obtaining process for obtaining the control management information transmitted from the control management information control unit (H1).
摘要翻译：配置能够经由数据通信网络（TU）进行通信的多个控制单元。将多个控制单元中的一个设置为具有可写入非易失性存储装置的信息管理控制单元（H1）。信息管理控制单元（H1）在通过电力供应激活时执行控制管理信息分配处理，用于通过通信网络（TU）将存储在存储器（50）中的控制管理信息发送到存储对象控制单元（H2-H6））。在通过电力供应激活时，各个存储对象控制单元（H2-H6）执行用于获得从控制管理信息控制单元（H1）发送的控制管理信息的控制管理信息获取处理。

5. 发明授权

US06787412B2 Dielectric element and method for fabricating the same 失效
标题翻译：介电元件及其制造方法
公开(公告)号：US06787412B2
公开(公告)日：2004-09-07
申请号：US10458199
申请日：2003-06-11
申请人： Akira Hashimoto , Yoshimi Sato , Atsushi Kawakami , Hideya Kobari , Tetsuya Nakajima
发明人： Akira Hashimoto , Yoshimi Sato , Atsushi Kawakami , Hideya Kobari , Tetsuya Nakajima
IPC分类号： H01L218242
CPC分类号： H01L28/75 , H01L28/55 , Y10S438/957
摘要： It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.
摘要翻译：公开了一种介电元件，其包括设置在基板上的下电极，电介质层和上电极，其中至少一个电极为Pt层，Ru层用作基极层 Pt层。在电介质元件的制造中，通过电镀形成Pt层，使用光致抗蚀剂图案作为电镀掩模，并且形成Ru层作为籽晶层。本发明使得可以提供使用Pt作为电极材料的电介质元件，其能够容易地形成能够形成精细图案的电气特性优异的Pt电极而不产生空隙或接缝，并且不在处理室中发生污染，以及具有上述特征的制造电介质元件的方法。

6. 发明授权

US5500542A Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor 失效
公开(公告)号：US5500542A
公开(公告)日：1996-03-19
申请号：US194988
申请日：1994-02-14
申请人： Takashi Iida , Satoru Sumi , Hiroshi Shimizu , Akinori Tahara , Isao Amano , Tetsuya Nakajima
发明人： Takashi Iida , Satoru Sumi , Hiroshi Shimizu , Akinori Tahara , Isao Amano , Tetsuya Nakajima
IPC分类号： H01L21/82 , H01L21/822 , H01L27/02 , H01L27/04 , H01L27/118 , H01L27/10 , H01L23/62
CPC分类号： H01L27/0255 , H01L27/11803 , H01L2924/0002
摘要： Diodes rows are arranged at interval L in the same direction as that of arrangement of cell rows. Each of the diodes rows has a row of pn junctions each formed on a substrate and arranged along a track vertical to interconnection tracks. The interconnection between cells automatically connect the gates of MOS transistors to the diodes without the need for considering which gate should be connected to the diode. The length of wiring between the gate of MOS transistor and a diode is less than an upper limit value for preventing electrostatic breakdown at a gate oxide in a process of fabricating the semiconductor integrated circuit. Each of the pn junctions may be formed under necessary input signal lines, necessary ground line, the bottom of the drain of MOS transistor or under the power supply line outside of macrocell.

7. 发明授权

US4971469A Automatic paper loading mechanism and method for printer 失效
标题翻译：自动纸张装载机构和打印机方法
公开(公告)号：US4971469A
公开(公告)日：1990-11-20
申请号：US472585
申请日：1990-01-30
申请人： Tetsuya Nakajima
发明人： Tetsuya Nakajima
IPC分类号： B41J13/02 , B41J13/20 , B41J19/00
CPC分类号： B41J13/20
摘要： In a printer in which a paper is pressed against a platen by a bail roller, the bail roller is automatically released from the platen, during paper loading, so as not to obstruct the paper feeding.The bail roller is pivotally moved between a loading position and a release position by a pivoting unit. The pivotal movement of the bail roller is performed by a paper feed motor so that the drive force of the paper feed motor is transmitted to the pivoting unit via a clutch unit. The connecting and disconnection of the clutch unit is controlled as a printing head carriage is moved to an outer area outside the printing area.
摘要翻译：在纸张通过吊环滚轮压靠在压板上的打印机中，在纸张装入期间，吊环自动从压盘释放，以免妨碍送纸。吊环辊通过枢转单元在装载位置和释放位置之间枢转运动。引纸辊的枢转运动由进纸电机执行，使得供纸马达的驱动力经由离合器单元传递到枢转单元。当打印头托架移动到打印区域外部的外部区域时，离合器单元的连接和断开被控制。

8. 发明授权

US4747083A Semiconductor memory with segmented word lines 失效
标题翻译：具有分段字线的半导体存储器
公开(公告)号：US4747083A
公开(公告)日：1988-05-24
申请号：US625674
申请日：1984-06-28
申请人： Tetsuya Nakajima , Masaki Nagahara
发明人： Tetsuya Nakajima , Masaki Nagahara
IPC分类号： G11C11/414 , G11C5/06 , G11C8/08 , G11C8/14 , G11C8/00
CPC分类号： G11C8/14 , G11C5/063 , G11C8/08
摘要： A semiconductor memory device including at least word lines and bit lines with memory cells located at each cross point therebetween. Each of the word lines is divided to form segmented word lines and each of the word line segments is driven by an individual private word driver. The individual private word drivers are activated together in response to a word selection signal. Level shifting diodes are employed in the bit line drivers to offset a voltage level change caused by the segment word drivers.
摘要翻译：半导体存储器件至少包括字线和位线，存储单元位于它们之间的每个交叉点处。每个字线被划分以形成分割的字线，并且每个字线段由单个专用字驱动器驱动。各个专用字驱动器响应于字选择信号一起被激活。在位线驱动器中采用电平移位二极管以抵消由段字驱动器引起的电压电平变化。

9. 发明授权

US6120969A Polyphenol compound, quinonediazide ester and positive photoresist composition 失效
标题翻译：多酚化合物，醌二叠氮化物酯和正性光致抗蚀剂组合物
公开(公告)号：US6120969A
公开(公告)日：2000-09-19
申请号：US269881
申请日：1999-04-02
申请人： Mitsuo Hagihara , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama , Tetsuya Nakajima
发明人： Mitsuo Hagihara , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama , Tetsuya Nakajima
IPC分类号： C07C39/15 , C07C309/71 , C07C309/74 , C07C309/76 , G03F7/004 , G03F7/022 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： Disclosed is, for example, bis(2,5-dimethyl-3-(2-hydroxy-5-ethylbenzyl)-4-hydroxyphenyl)methane and quinonediazide ester thereof. These are used for positive photoresist compositions. According to the invention, positive photoresist compositions having a high definition, a high sensitivity and a large exposure margin can be provided.
摘要翻译： PCT No.PCT / JP99 / 03472 Sec。一九九九年四月二日 102（e）1999年4月2日PCT 1998年8月4日提交的PCT是例如双（2,5-二甲基-3-（2-羟基-5-乙基苄基）-4-羟基苯基）甲烷和醌二叠氮化物其中。这些用于正性光致抗蚀剂组合物。根据本发明，可以提供具有高清晰度，高灵敏度和大曝光裕度的正性光致抗蚀剂组合物。

10. 发明授权

US5672895A Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor 失效
标题翻译：具有防静电保护电路的半导体集成电路及其布局设计方法
公开(公告)号：US5672895A
公开(公告)日：1997-09-30
申请号：US575030
申请日：1995-12-19
申请人： Takashi Iida , Satoru Sumi , Hiroshi Shimizu , Akinori Tahara , Isao Amano , Tetsuya Nakajima
发明人： Takashi Iida , Satoru Sumi , Hiroshi Shimizu , Akinori Tahara , Isao Amano , Tetsuya Nakajima
IPC分类号： H01L21/82 , H01L21/822 , H01L27/02 , H01L27/04 , H01L27/118 , H01L27/01 , H01L23/62 , H01L27/12 , H01L31/0392
CPC分类号： H01L27/0255 , H01L27/11803 , H01L2924/0002
摘要： Diodes rows are arranged at interval L in the same direction as that of arrangement of cell rows. Each of the diodes rows has a row of pn junctions each formed on a substrate and arranged along a track vertical to interconnection tracks. The interconnection between cells automatically connect the gates of MOS transistors to the diodes without the need for considering which gate should be connected to the diode. The length of wiring between the gate of MOS transistor and a diode is less than an upper limit value for preventing electrostatic breakdown at a gate oxide in a process of fabricating the semiconductor integrated circuit. Each of the pn junctions may be formed under necessary input signal lines, necessary ground line, the bottom of the drain of MOS transistor or under the power supply line outside of macrocell.
摘要翻译：二极管行以与单元行的排列方向相同的方向以间隔L布置。每个二极管行具有一排pn结，每一个pn结形成在衬底上并且沿垂直于互连轨道的轨道布置。单元之间的互连将MOS晶体管的栅极自动连接到二极管，而不需要考虑哪个栅极应连接到二极管。在制造半导体集成电路的过程中，MOS晶体管的栅极和二极管之间的布线长度小于防止栅极氧化物的静电击穿的上限值。每个pn结可以形成在必要的输入信号线，必要的接地线，MOS晶体管的漏极的底部或者在宏单元之外的电源线下。

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