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    • 1. 发明授权
    • Thin film fabrication method and thin film fabrication apparatus
    • 薄膜制造方法和薄膜制造装置
    • US06872289B2
    • 2005-03-29
    • US09799609
    • 2001-03-07
    • Shigeru MizunoMakoto SatouManabu TagamiHideki Satou
    • Shigeru MizunoMakoto SatouManabu TagamiHideki Satou
    • C23C14/34C23C14/35C23C16/52H01J37/34H01L21/285C23C16/00
    • H01J37/32706C23C14/354H01J37/3405
    • A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.
    • 制造薄膜,同时使等离子体P中的离子通过相对于等离子体P的空间电位施加偏置而入射,通过赋予衬底9的表面设定电位。偏置系统6使衬底表面电位Vs 通过在介质块22中的偏置电极23上施加脉冲形式的电极施加的电压Ve来改变脉冲形式。脉冲频率低于等离子体P中的离子的振荡频率,脉冲周期T, 脉冲宽度t和脉冲高度h由控制部分62以使得离子的入射被优化的方式控制。 施加的脉冲以使得在脉冲周期T结束时基板表面电位Vs恢复到浮动电位Vf的方式被控制,并且离子入射能量在脉冲周期T中暂时跨越薄膜溅射阈值。
    • 2. 发明授权
    • Thin film fabrication method and thin film fabrication apparatus
    • 薄膜制造方法和薄膜制造装置
    • US06348238B1
    • 2002-02-19
    • US09453883
    • 2000-02-15
    • Shigeru MizunoMakoto SatouManabu TagamiHideki Satou
    • Shigeru MizunoMakoto SatouManabu TagamiHideki Satou
    • C23C1432
    • H01J37/32706C23C14/354H01J37/3405
    • A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.
    • 制造薄膜,同时使等离子体P中的离子通过相对于等离子体P的空间电位施加偏置而入射,通过给基板9的表面赋予设定电位。偏置系统6使基板表面电位Vs 通过在介质块22中的偏置电极23上施加脉冲形式的电极施加的电压Ve来改变脉冲形式。脉冲频率低于等离子体P中的离子的振荡频率,脉冲周期T, 脉冲宽度t和脉冲高度h由控制部分62以使得离子的入射被优化的方式控制。 施加的脉冲以使得在脉冲周期T结束时基板表面电位Vs恢复到浮动电位Vf的方式被控制,并且离子入射能量在脉冲周期T中暂时跨越薄膜溅射阈值。
    • 4. 发明申请
    • ALUMINUM NITRIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF
    • 氮化铝烧结体及其制造方法
    • US20090311162A1
    • 2009-12-17
    • US12376158
    • 2007-07-26
    • Tatsuo EsakiHideki Satou
    • Tatsuo EsakiHideki Satou
    • C01B21/072
    • C04B35/581C04B35/645C04B37/005C04B2235/3217C04B2235/3869C04B2235/3873C04B2235/5436C04B2235/5445C04B2235/656C04B2235/6567C04B2235/725C04B2235/786C04B2235/80C04B2235/9607C04B2237/08C04B2237/366
    • An aluminum nitride sintered body in which the ratio of a peak area S2 of a diffraction peak at 2θ=34° or more and 35° or less corresponding to an aluminum oxynitride phase to a peak area S1 of a diffraction peak of an aluminum nitride crystal face [100] in X-ray diffraction, i.e. S2/S1, is 0.01 or more and 0.3 or less, and the spin concentration at a magnetic field between 336 mT and 342 mT as measured by an electron spin resonance method is 1×1015 spins/cm3 or more and 1×1020 spins/cm3 or less. This is manufactured by: mixing a predetermined amount of the aluminum nitride powder and the α-alumina powder whose ratio of average particle diameter to that of aluminum nitride powder is within the range of 0.3 or more and 0.8 or less; and sintering the mixed powder at ambient-pressure. Accordingly, it is possible to provide the aluminum nitride sintered body whose volume resistivity is controlled within the range of 1×108 Ω·cm or more and 1×1012 Ω·cm or less, and the volume resistivity can be stably maintained even heated up to 1950° C. for jointing.
    • 氮化铝烧结体,其中在2θ= 34°以上且35°以下的衍射峰的峰面积S2对应于氮氧化铝相与氮化铝晶体的衍射峰的峰面积S1的比率 X射线衍射中的面[100],即S2 / S1为0.01以上且0.3以下,通过电子自旋共振法测定的336mT〜342mT之间的磁场的自旋浓度为1×10 15个旋转/ cm3以上,1×1020自旋/ cm3以下。 这是通过以下方式制造的:将预定量的氮化铝粉末和平均粒径与氮化铝粉末的比例在0.3以上至0.8以下的α-氧化铝粉末混合; 并在环境压力下烧结混合粉末。 因此,可以提供其体积电阻率控制在1×10 8Ω·cm以上至1×10 12Ω·cm以下的氮化铝烧结体,并且可以将体积电阻率稳定地维持甚至加热至1950℃ 联合。
    • 5. 发明授权
    • Viscous fluid supply control apparatus and method thereof
    • 粘性流体供给控制装置及其方法
    • US6089469A
    • 2000-07-18
    • US109730
    • 1998-07-02
    • Masaki FusamaOsamu NakagawaHideki Satou
    • Masaki FusamaOsamu NakagawaHideki Satou
    • B05B12/00B05C11/10B05D3/00B67D5/08
    • B05C11/1002B05C11/1013
    • A viscous fluid supply control apparatus reduces a difference between a primary side pressure of a feeding pump and a secondary side pressure thereof to lessen an internal leak of the feeding pump. The viscous fluid supply control apparatus comprises a viscous fluid supply source, a discharge nozzle for discharging a viscous fluid, a feeding pump for feeding the viscous fluid from the viscous fluid supply source to the discharge nozzle, a first pressure sensor for detecting the primary side pressure of the feeding pump, a second pressure sensor for detecting the secondary side pressure of the feeding pump, and pressure regulation control means for controlling actuation of pressure regulating means regulating the primary side pressure based on detection values obtained by the first and second pressure sensors. The pressure regulation control means controls the actuation of the pressure regulating means such that the primary side pressure of the feeding pump converges on the secondary side pressure thereof.
    • 粘性流体供给控制装置减小了供给泵的初级侧压力和二次侧压力之间的差异,以减少供给泵的内部泄漏。 粘性流体供给控制装置包括粘性流体供给源,用于排出粘性流体的排出喷嘴,用于将粘性流体从粘性流体供给源供给到排出喷嘴的供给泵,用于检测初级侧的第一压力传感器 供给泵的压力,用于检测供给泵的二次侧压力的第二压力传感器,以及压力调节控制单元,其根据第一和第二压力传感器得到的检测值,控制调节一次侧压力的压力调节机构的动作 。 压力调节控制装置控制压力调节装置的致动,使得供给泵的初级侧压力在其二次侧压力上收敛。
    • 6. 发明授权
    • Method of polymerizing olefin
    • 聚合烯烃的方法
    • US06818708B2
    • 2004-11-16
    • US10221166
    • 2002-09-18
    • Hideki SatouShinji ArakiHiromi Adachi
    • Hideki SatouShinji ArakiHiromi Adachi
    • C08F234
    • C08F297/083C08F10/00C08F110/06C08F210/06C08F297/08C08L23/02C08L2308/00Y10S526/901Y10S526/905C08F2/001C08F2/34C08F4/6543C08L2666/04C08F210/16C08F2500/17
    • The process for polymerizing olefins uses a plurality of series-connected polymerization reactors in which at least one of second and subsequent reactors is a vapor-phase polymerization reactor containing a multicomponent gas. The process comprises the steps of: taking the multicomponent gas out of the vapor-phase polymerization reactor; mixing the multicomponent gas with an inert gas which is lighter than at least one component of the multicomponent gas, thereby obtaining a mixed gas; compressing and/or cooling the mixed gas to liquefy a part of the multicomponent gas; discharging at least a part of a gaseous mixture comprising the inert gas and an unliquefied multicomponent gas out of a reaction system; and returning a fluid comprising the remainder of the gaseous mixture and the liquefied multicomponent gas to the vapor-phase polymerization reactor. By mixing the multicomponent gas taken out of the vapor-phase polymerization reactor with the inert gas, the composition of gas in the vapor-phase polymerization reactor is effectively controlled, thereby ensuring a stable production of olefin polymers of a desired molecular weight distribution and composition.
    • 聚合烯烃的方法使用多个串联聚合反应器,其中第二和随后的反应器中的至少一个是含有多组分气体的气相聚合反应器。 该方法包括以下步骤:将多组分气体从气相聚合反应器中取出; 将多组分气体与比多组分气体的至少一种组分轻的惰性气体混合,从而获得混合气体; 压缩和/或冷却所述混合气体以液化所述多组分气体的一部分; 将包含惰性气体的气态混合物的至少一部分和从反应体系排出的未液化的多组分气体排出; 并将包含剩余的气态混合物和液化的多组分气体的流体返回到气相聚合反应器中。 通过将从气相聚合反应器中取出的多组分气体与惰性气体混合,气相聚合反应器中气体的组成被有效地控制,从而确保了所需分子量分布和组成的烯烃聚合物的稳定生产 。