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1. 发明授权

US5754915A Automatic photosensitive material developing machine and photographic processing solution replenishing apparatus 失效
标题翻译：自动感光材料显影机和摄影处理液补充装置
公开(公告)号：US5754915A
公开(公告)日：1998-05-19
申请号：US750676
申请日：1996-12-13
申请人： Shigeru Masuda , Tsukasa Nakano , Masayuki Kojima , Masayuki Nakanishi , Toshihiko Nakano , Haruo Hakamada , Hideo Ishii
发明人： Shigeru Masuda , Tsukasa Nakano , Masayuki Kojima , Masayuki Nakanishi , Toshihiko Nakano , Haruo Hakamada , Hideo Ishii
IPC分类号： G03D3/06
CPC分类号： G03D3/065
摘要： An automatic photosensitive material developing machine supplies a solid processing solution to be dissolved according to consumption of processing solution for a silver halide photosensitive material to be treated. The developing machine includes a solid processing solution supplying section for supplying the solid processing solution from a solid processing solution cartridge containing the solid processing solution, and a solid processing solution transferring section for receiving the solid processing solution supplied by the solid processing solution supplying section in a bucket, and for transferring the bucket upward.
摘要翻译： PCT No.PCT / JP95 / 01188 Sec。 371日期1996年12月13日第 102（e）日期1996年12月13日PCT提交1995年6月12日PCT公布。 WO95 / 34844 PCT出版物日期1995年12月21日自动感光材料显影机根据消费用于待处理的卤化银感光材料的处理溶液提供待溶解的固体处理溶液。显影机包括：固体处理剂供给部，用于从固体处理溶液的固体处理液筒供给固体处理液;固体处理液转移部，其用于接收由固体处理剂供给部供给的固体处理液一个铲斗，并将铲斗向上传送。

2. 发明授权

US5779185A Film splicing device 失效
标题翻译：胶片拼接装置
公开(公告)号：US5779185A
公开(公告)日：1998-07-14
申请号：US712544
申请日：1996-09-11
申请人： Shigeru Masuda , Masayuki Kojima
发明人： Shigeru Masuda , Masayuki Kojima
IPC分类号： G03D13/00 , B65H19/18
CPC分类号： G03D13/003
摘要： A splicing device which can automatically connect films to a leader, includes a table for supporting the leader. The table has an opening over which is provided a support portion for supporting a film cartridge. A fixed guide and a movable guide are provided under the opening. Defined between the fixed and movable guides is a film turning passage having a film outlet and inlet that face the opening. A feed roller and a press roller are provided at the inlet of the film turning passage. With the leader set in position on the table, a swing arm is pivoted to catch the film end protruding from the film cartridge supported by the support portion. The swing arm is further pivoted to guide the film end through a second hole formed in the leader into the film turning passage. In this state, the feed roller is rotated to feed the film through the film turning passage and into the first hole formed in the leader while resiliently deforming prongs extending across the first hole. Then, the feed roller is reversed to pull the film backward until the prongs engage in holes formed in the film at its leading end. The film is thus connected to the leader.
摘要翻译：可以自动地将电影连接到领导者的拼接装置，包括用于支撑领导者的桌子。该台具有开口，在该开口上设置有用于支撑暗盒的支撑部分。一个固定的导向件和一个活动的导向件设置在开口的下面。定义在固定和可移动导向件之间的是具有面向开口的胶片出口和入口的胶片转动通道。馈送辊和压辊设置在胶片转动通道的入口处。当引导件设置在桌子上的位置时，摆臂枢转以捕捉从由支撑部分支撑的暗盒突出的胶片端部。摆臂进一步枢转以将胶片端引导通过形成在引导件中的第二孔引导到胶片转动通道中。在这种状态下，馈送辊被旋转以将膜通过胶片转动通道进入并形成在引导件中的第一孔中，同时弹性地使穿过第一孔延伸的叉头变形。然后，进给辊反转，向后拉动胶片，直到叉头在其前端接合形成在胶片中的孔中。因此，电影连接到领导者。

3. 发明授权

US5565953A Photographic processing machine 失效
标题翻译：摄影加工机
公开(公告)号：US5565953A
公开(公告)日：1996-10-15
申请号：US313573
申请日：1994-09-23
申请人： Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga , Shigeru Masuda
发明人： Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga , Shigeru Masuda
IPC分类号： G03D3/13 , G03B27/46 , G03D13/00 , G03D3/08
CPC分类号： G03D13/003
摘要： Extra printing is made possible during a set of ordinary processing operations such as film development and printing. A film is developed and dried while being fed by a leader attached thereto. After cutting the leader from the film, it is fed to the printing unit to print the images on the film onto photographic paper. A plurality of film stocking units are provided in a path from the film drying unit to the printing unit. Each stocking unit can selectively stock a single film or allow it to pass without stocking. A second film stocking unit can move laterally to change the film track. If a film requiring a long exposure time is present in the printing unit, the subsequent films that have been developed and dried can be stocked in the other film stocking units. Thus, continuous film developing operations are not interrupted.
摘要翻译：在一系列普通的加工操作（如胶片显影和印刷）中可以进行额外的印刷。在由连接在其上的引导器供给时，开发并干燥薄膜。从胶片上切割引导件后，将其送入打印单元，将胶片上的图像打印到相纸上。在从胶片干燥单元到打印单元的路径中设置多个胶片存放单元。每个放养单元可以选择性地储存单个胶片，或者使其不经过放样即可通过。第二个放卷单元可以横向移动以改变胶片轨迹。如果在印刷单元中存在需要长时间曝光时间的薄膜，那么已经开发和干燥的后续薄膜可以存放在其它薄片放养单元中。因此，连续的成膜操作不会中断。

4. 发明授权

US5455653A Photographic processing machine 失效
标题翻译：摄影加工机
公开(公告)号：US5455653A
公开(公告)日：1995-10-03
申请号：US310082
申请日：1994-09-22
申请人： Yasunobu Shimamura , Shigeru Masuda , Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga
发明人： Yasunobu Shimamura , Shigeru Masuda , Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga
IPC分类号： G03B27/46 , G03D13/00 , G03D3/08
CPC分类号： G03D13/003
摘要： The films are developed and printed continuously and automatically even if the film feed direction in the film processor and the one in the printer are not in the same vertical plane. A film stocking unit is provided downstream of the film driving unit. The film stocking unit is movable to a position aligned with the film feed path extending to the printing unit. This increases the freedom or flexibility in arranging the film processor and the printer.
摘要翻译：即使胶片处理器中的胶片输送方向和打印机中的胶片进给方向不在同一垂直平面，也可以连续自动地显影和打印胶片。在胶片驱动单元的下游设置胶片存放单元。胶片放置单元可移动到与延伸到打印单元的胶片馈送路径对准的位置。这增加了布置胶片处理器和打印机的自由度或灵活性。

5. 发明申请

US20100132392A1 INDOOR UNIT OF AIR CONDITIONER 失效
标题翻译：空调室内单位
公开(公告)号：US20100132392A1
公开(公告)日：2010-06-03
申请号：US12095107
申请日：2006-11-26
申请人： Masanao Yasutomi , Masayuki Kojima , Masuzou Takahashi , Toshihiro Wakamatsu
发明人： Masanao Yasutomi , Masayuki Kojima , Masuzou Takahashi , Toshihiro Wakamatsu
IPC分类号： F25D21/14 , F25D17/06
CPC分类号： F24F1/0007 , F24F1/0025 , F24F13/222
摘要： Grooves are formed on a back surface 22 of a tongue part 21 of a rear plate 3 which surface does not guide a flow of air.
摘要翻译：凹槽形成在后板3的舌部21的后表面22上，该表面不引导空气流。

6. 发明授权

US07081649B2 Semiconductor integrated circuitry and method for manufacturing the circuitry 有权
标题翻译：半导体集成电路和制造电路的方法
公开(公告)号：US07081649B2
公开(公告)日：2006-07-25
申请号：US10920389
申请日：2004-08-18
申请人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
发明人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
IPC分类号： H01L29/76
CPC分类号： H01L27/10852 , H01L27/105 , H01L27/10814 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L27/10894 , Y10S257/90
摘要： A technology for a semiconductor integrated circuitry allows each of the DRAM memory cells to be divided finely so as to be more highly integrated and operate faster. In a method of manufacturing such a semiconductor integrated circuit, at first, gate electrodes 7 are formed via a gate insulating film 6 on the main surface of a semiconductor substrate 1, and on side surfaces of each of the gate electrodes there is formed a first side wall spacer 14 composed of silicon nitride and a second side wall spacer 15 composed of silicon oxide. Then, in the selecting MISFET Qs in the DRAM memory cell area there are opened connecting holes 19 and 21 in a self-matching manner with respect to the first side wall spacers 14 and connecting portion is formed connecting a conductor 20 to a bit line BL. In addition, in the N channel MISFETs Qn1 and Qn2, and in the P channel MISFET Qp1 in areas other than the DRAM memory cell area, high density N-type semiconductor areas 16 and 16b are formed, as well as a high density P-type semiconductor area 17 is formed in a self-matching manner with respect to the second side wall spacers 15.
摘要翻译：用于半导体集成电路的技术允许每个DRAM存储单元被细分，以便更高度地集成并且操作更快。在制造这样的半导体集成电路的方法中，首先，在半导体衬底1的主表面上经由栅极绝缘膜6形成栅电极7，并且在每个栅电极的侧表面上形成第一由氮化硅构成的侧壁隔板14和由氧化硅构成的第二侧壁间隔物15。然后，在DRAM存储单元区域中的选择MISFET Qs中，相对于第一侧壁间隔件14以自匹配的方式打开连接孔19和21，并且连接部分形成为将导体20连接到位线BL 。此外，在N沟道MISFET Qn 1和Q n 2以及在DRAM存储单元区域以外的区域中的P沟道MISFET Qp 1中，形成高密度N型半导体区域16和16b，以及高密度P型半导体区域17相对于第二侧壁间隔件15以自匹配的方式形成。

7. 发明授权

US06838388B2 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US06838388B2
公开(公告)日：2005-01-04
申请号：US09893577
申请日：2001-06-29
申请人： Masahiro Tadokoro , Masahiro Shioya , Masayuki Kojima , Takenobu Ikeda
发明人： Masahiro Tadokoro , Masahiro Shioya , Masayuki Kojima , Takenobu Ikeda
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/60 , H01L21/768 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/31144 , H01L27/10855 , H01L27/10888
摘要： A fabrication method of a semiconductor integrated circuit device comprises, in an SAC process or HARC process, subjecting a semiconductor substrate to plasma etching to make contact holes in an oxide film made of a silicon oxide film formed on the semiconductor substrate. For improving the ease-in-etching property of the silicon oxide film and selectivity to a nitride film, a residence time of an etching gas within a chamber is so set as to be in a range where selectivity to an insulating film made of silicon nitride is improved by using etching conditions of a low pressure and a large flow rate of the etching gas of C5H8/O2/Ar.

8. 发明授权

US06743673B2 Semiconductor integrated circuitry and method for manufacturing the circuitry 有权
标题翻译：半导体集成电路和制造电路的方法
公开(公告)号：US06743673B2
公开(公告)日：2004-06-01
申请号：US10145810
申请日：2002-05-16
申请人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
发明人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/105 , H01L27/10814 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L27/10894 , Y10S257/90
摘要： A technology for a semiconductor integrated circuitry allows each of the DRAM memory cells to be divided finely so as to be more highly integrated and operate faster. In a method of manufacturing such a semiconductor integrated circuit, at first, gate electrodes 7 are formed via a gate insulating film 6 on the main surface of a semiconductor substrate 1, and on side surfaces of each of the gate electrodes there is formed a first side wall spacer 14 composed of silicon nitride and a second side wall spacer 15 composed of silicon oxide. Then, in the selecting MISFET Qs in the DRAM memory cell area there are opened connecting holes 19 and 21 in a self-matching manner with respect to the first side wall spacers 14 and connecting portion is formed connecting a conductor 20 to a bit line BL. In addition, in the N channel MISFETs Qn1 and Qn2, and in the P channel MISFET Qp1 in areas other than the DRAM memory cell area, high density N-type semiconductor areas 16 and 16b are formed, as well as a high density P-type semiconductor area 17 is formed in a self-matching manner with respect to the second side wall spacers 15.
摘要翻译：用于半导体集成电路的技术允许每个DRAM存储单元被细分，以便更高度地集成并且操作更快。在制造这样的半导体集成电路的方法中，首先，在半导体衬底1的主表面上经由栅极绝缘膜6形成栅电极7，并且在每个栅电极的侧表面上形成第一由氮化硅构成的侧壁隔板14和由氧化硅构成的第二侧壁间隔物15。然后，在DRAM存储单元区域中的选择MISFET Qs中，相对于第一侧壁间隔件14以自匹配的方式打开连接孔19和21，并且连接部分形成为将导体20连接到位线BL 。此外，在N沟道MISFET Qn1和Qn2以及在DRAM存储单元区域以外的区域中的P沟道MISFET Qp1中，形成高密度N型半导体区域16和16b以及高密度P- 型半导体区域17相对于第二侧壁间隔件15以自匹配的方式形成。

9. 发明授权

US06537415B2 Apparatus for processing samples 失效
公开(公告)号：US06537415B2
公开(公告)日：2003-03-25
申请号：US09942707
申请日：2001-08-31
申请人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
发明人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
IPC分类号： H01L213065
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/185 , H01L21/67017 , H01L21/67028 , H01L21/67069 , H01L21/67161 , H01L21/67207 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

10. 发明授权

US06254721B1 Method and apparatus for processing samples 失效
标题翻译：样品处理方法和装置
公开(公告)号：US06254721B1
公开(公告)日：2001-07-03
申请号：US09504083
申请日：2000-02-15
申请人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
发明人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
IPC分类号： H01L21306
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/185 , H01L21/67017 , H01L21/67028 , H01L21/67069 , H01L21/67161 , H01L21/67207 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.
摘要翻译：公开了用于处理样品的装置以及使用该装置的方法。该设备包括用于处理样品（例如，等离子体蚀刻设备）的处理设备（a），（b）用于除去由样品处理形成的残余腐蚀性化合物，（c）用于湿法处理样品和（d）干燥处理样品。可以进行多个样品的湿法处理。湿式处理装置可以包括多个湿加工站。样品可以通过多个湿处理站串联通过，或者可以通过湿处理站并行通过。

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