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    • 3. 发明申请
    • MAGNETRON SPUTTERING METHOD, AND MAGNETRON SPUTTERING APPARATUS
    • MAGNETRON溅射方法和MAGNETRON SPUTTERING装置
    • US20110186425A1
    • 2011-08-04
    • US12999985
    • 2009-06-17
    • Tadahiro OhmiTetsuya GotoNobuaki SekiSatoru KawakamiTakaaki Matsuoka
    • Tadahiro OhmiTetsuya GotoNobuaki SekiSatoru KawakamiTakaaki Matsuoka
    • C23C14/35
    • C23C14/35H01J37/3405H01J37/3423
    • A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer.
    • 溅射方法包括设置多个薄且长的沉积区域,使得薄且长的沉积区域各自在第一方向上与具有与半导体晶片的直径相等的直径的圆形参考区域交叉,并且以预定间隔布置在 第二方向垂直于第一方向; 设置所述多个薄且长的沉积区域中的一个,使得其沿着所述第一方向延伸的侧面的一侧穿过所述圆形参考区域的大致中心; 设置多个薄且长的沉积区域中的另一个,使得其沿着第一方向延伸的侧面的一侧通过圆形参考区域的实质边缘; 设置多个薄和长沉积区域的宽度,使得通过将第二方向上的多个薄沉积区域和长沉积区域的宽度求和而获得的值基本上等于圆形参考区域的半径; 设置多个薄且长的靶以面对相应的薄和长沉积区域,使得从多个薄且长的靶发射的溅射颗粒入射到相应的薄和长的沉积区域; 在与圆形参考区域重叠的同时设置半导体晶片; 限制在靶附近由磁控管放电产生的等离子体,并从靶中发射溅射粒子; 并且通过使用通过圆形基准区域的中心的法线作为旋转中心轴以预定转速旋转半导体晶片,以在半导体晶片的表面上沉积膜。