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1. 发明申请

US20050024612A1 Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method 失效
标题翻译：投影光学系统调整方法，预测方法，评价方法，调整方法，曝光方法和曝光装置，程序和装置制造方法
公开(公告)号：US20050024612A1
公开(公告)日：2005-02-03
申请号：US10927287
申请日：2004-08-27
申请人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
发明人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
IPC分类号： G03F7/20 , G03B27/68
CPC分类号： G03F7/706 , G03F7/70258 , G03F7/70625 , G03F7/70883
摘要： Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).
摘要翻译：测量投影光学系统的波前像差，获得关于波前像差的信息（步骤102）。此外，通过投影光学系统将标线图案转印到晶片上（步骤104至108）。然后，显影图案的摇动器，对形成在晶片上的抗蚀剂图像进行线宽测量，并且对沿预定方向延伸的第一线图案和第二线图案的图像的线宽差测量与第一线图案正交的（步骤112至118）。并且，根据作为波前像差的扩展的线性宽度差的Zernike多项式的第12项的值和线宽差，调整投影光学系统，使得第9项（低阶球面像差项）（步骤120至124）。

2. 发明申请

US20060227306A1 Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method 审中-公开
标题翻译：投影光学系统调整方法，预测方法，评价方法，调整方法，曝光方法和曝光装置，程序和装置制造方法
公开(公告)号：US20060227306A1
公开(公告)日：2006-10-12
申请号：US11447004
申请日：2006-06-06
申请人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
发明人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
IPC分类号： G03B27/68
CPC分类号： G03F7/706 , G03F7/70258 , G03F7/70625 , G03F7/70883
摘要： Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).
摘要翻译：测量投影光学系统的波前像差，获得关于波前像差的信息（步骤102）。此外，通过投影光学系统将标线图案转印到晶片上（步骤104至108）。然后，显影图案的摇动器，对形成在晶片上的抗蚀剂图像进行线宽测量，并且对沿预定方向延伸的第一线图案和第二线图案的图像的线宽差测量与第一线图案正交的（步骤112至118）。并且，根据作为波前像差的扩展的线性宽度差的Zernike多项式的第12条项的值和线宽差，调整投影光学系统，使得9 （低阶球面像差项）被控制（步骤120至124）。

3. 发明申请

US20060119823A1 PROJECTION OPTICAL SYSTEM ADJUSTMENT METHOD, PREDICTION METHOD, EVALUATION METHOD, ADJUSTMENT METHOD, EXPOSURE METHOD AND EXPOSURE APPARATUS, PROGRAM, AND DEVICE MANUFACTURING METHOD 失效
标题翻译：投影光学系统调整方法，预测方法，评估方法，调整方法，曝光方法和曝光装置，程序和装置制造方法
公开(公告)号：US20060119823A1
公开(公告)日：2006-06-08
申请号：US11336947
申请日：2006-01-23
申请人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
发明人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
IPC分类号： G03B27/52
CPC分类号： G03F7/706 , G03F7/70258 , G03F7/70625 , G03F7/70883
摘要： Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).
摘要翻译：测量投影光学系统的波前像差，获得关于波前像差的信息（步骤102）。此外，通过投影光学系统将标线图案转印到晶片上（步骤104至108）。然后，显影图案的摇动器，对形成在晶片上的抗蚀剂图像进行线宽测量，并且对沿预定方向延伸的第一线图案和第二线图案的图像的线宽差测量与第一线图案正交的（步骤112至118）。并且，根据作为波前像差的扩展的线性宽度差的Zernike多项式的第12条项的值和线宽差，调整投影光学系统，使得9 （低阶球面像差项）被控制（步骤120至124）。

4. 发明授权

US07102731B2 Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method 失效
公开(公告)号：US07102731B2
公开(公告)日：2006-09-05
申请号：US11336947
申请日：2006-01-23
申请人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
发明人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
IPC分类号： G03B27/52 , G03B27/42 , G03B27/32
CPC分类号： G03F7/706 , G03F7/70258 , G03F7/70625 , G03F7/70883
摘要： Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).

5. 发明授权

US07088426B2 Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method 失效
标题翻译：投影光学系统调整方法，预测方法，评价方法，调整方法，曝光方法和曝光装置，程序和装置制造方法
公开(公告)号：US07088426B2
公开(公告)日：2006-08-08
申请号：US10927287
申请日：2004-08-27
申请人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
发明人： Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
IPC分类号： G03B27/52 , G03B27/42 , G03B27/32
CPC分类号： G03F7/706 , G03F7/70258 , G03F7/70625 , G03F7/70883
摘要： When a pattern is transferred via a projection optical system, a size of an image of the pattern varies depending on a defocus amount of a transferring position from the best focus position, and a flucuation curve showing the variation (the so-called CD-focus curve) varies depending on wavefront aberration of the projection optical system. There is a close relation between a linear combination value of a plurality of terms that each have a coefficient (an aberration component) of a plurality of Zernike terms (aberration component terms) into which the wavefront aberration of the projection optical system is decomposed using a Zernike polynomial in series expansion, and the variation of the flucuation curve. Accordingly, by using the above relation, the CD-focus curve related to the pattern via a projection optical system whose aberration state is predetermined exposed under predetermined exposure conditions can be predicted within a short period of time by a simple calculation of obtaining the linear combination value of a plurality of terms that each have an aberration component.
摘要翻译：当通过投影光学系统传送图案时，图案的尺寸根据从最佳对焦位置的转印位置的散焦量而变化，并且显示变化的流感曲线（所谓的CD焦点曲线）根据投影光学系统的波前像差而变化。多个项目的线性组合值之间存在密切关系，每个项目的线性组合值各自具有使用以下方式分解投影光学系统的波前像差的多个泽尼克项（像差分量项）的系数（像差分量） Zernike多项式的串联膨胀，以及流变曲线的变化。因此，通过使用上述关系，可以通过简单的计算获得线性组合，在短时间内预测通过经过预定曝光条件下曝光的像差状态的投影光学系统与图案相关的CD聚焦曲线每个具有像差分量的多个项的值。

6. 发明授权

US09146474B2 Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger and different linear polarization states in an on-axis area and a plurality of off-axis areas 有权
标题翻译：曝光方法和装置以及在轴上区域和多个离轴区域中制造具有光线大小和不同线偏振状态的光量分布的装置的方法
公开(公告)号：US09146474B2
公开(公告)日：2015-09-29
申请号：US12382277
申请日：2009-03-12
申请人： Takehito Kudo , Shigeru Hirukawa
发明人： Takehito Kudo , Shigeru Hirukawa
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70191 , G03B27/42 , G03F7/70091 , G03F7/701 , G03F7/70108 , G03F7/70158 , G03F7/70566
摘要： An exposure method and apparatus that illuminates a pattern with an illumination system to expose a substrate through a projection system are provided. The pattern is illuminated with illumination light having a light amount distribution, which is set such that an amount of light is larger in an on-axis area substantially including an optical axis and in a plurality of off-axis areas arranged out of the optical axis than in an area other than the on-axis area and the plurality of off-axis areas on a pupil plane of the illumination system. The polarization states of the illumination light are different between the on-axis area and the off-axis areas.
摘要翻译：提供了利用照明系统照亮图案以通过投影系统曝光基板的曝光方法和装置。用具有光量分布的照明光照射图案，该光量被设定为使得在基本上包括光轴的轴上区域中的光量以及布置在光轴外的多个离轴区域中的光量较大而不是在照明系统的光瞳平面上的除了轴上区域和多个离轴区域之外的区域中。照明光的偏振状态在轴上区域和离轴区域之间是不同的。

7. 发明授权

US08698998B2 Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device 有权
标题翻译：曝光装置，其清洁部件的方法，曝光装置的维护方法，维护装置及其制造方法
公开(公告)号：US08698998B2
公开(公告)日：2014-04-15
申请号：US11822964
申请日：2007-07-11
申请人： Hiroyuki Nagasaka , Kenichi Shiraishi , Soichi Owa , Shigeru Hirukawa
发明人： Hiroyuki Nagasaka , Kenichi Shiraishi , Soichi Owa , Shigeru Hirukawa
IPC分类号： G03B27/52 , G03B27/42 , G03B27/54 , G03B27/32 , G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341 , G03F7/707 , G03F7/7085 , G03F7/7095 , G03F7/70958 , G03F7/70975
摘要： An exposure apparatus EXS forms an immersion area AR2 of a liquid LQ on the side of the image plane of a projection optical system PL and performs exposure of a substrate P via the projection optical system PL and the liquid LQ of the immersion region AR2. The exposure apparatus EXS has an optical cleaning unit (80) which irradiates a predetermined irradiation light Lu, having an optical cleaning effect, onto, for example, the upper surface (31) of the substrate stage PST which makes contact with the liquid LQ for forming the immersion area AR2. Thus, it is possible to prevent deterioration of the exposure accuracy and measurement accuracy due to pollution of the member in contact with the liquid in the immersion region.
摘要翻译：曝光装置EXS在投影光学系统PL的像面一侧形成液体LQ的浸渍区域AR2，经由投影光学系统PL和浸渍区域AR2的液体LQ进行基板P的曝光。曝光装置EXS具有光学清洁单元（80），其将具有光学清洁效果的预定照射光Lu照射到例如与液体LQ接触的基板台PST的上表面（31）形成浸渍区域AR2。因此，可以防止由于与浸没区域中的液体接触的构件的污染导致的曝光精度和测量精度的劣化。

8. 发明授权

US08233133B2 Exposure method, exposure apparatus, and method for producing device 有权
标题翻译：曝光方法，曝光装置及其制造方法
公开(公告)号：US08233133B2
公开(公告)日：2012-07-31
申请号：US11312478
申请日：2005-12-21
申请人： Shigeru Hirukawa
发明人： Shigeru Hirukawa
IPC分类号： G03B27/52 , G03B27/42 , G03B27/58
CPC分类号： G03F7/70341 , G03F7/70258 , G03F7/70433 , G03F7/7085 , G03F7/70858 , G03F7/70875 , G03F7/70891
摘要： A liquid immersion photolithography system has an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. In addition, a plurality of nozzles are arranged so as to provide a substantially uniform velocity distribution of the liquid flow between the substrate and the projection optical system.
摘要翻译：液浸光刻系统具有用电磁辐射使基板曝光的曝光系统，并且包括将电磁辐射聚焦在基板上的投影光学系统。液体供应系统在投影光学系统和基板之间提供液体流动。此外，多个喷嘴被布置成在基板和投影光学系统之间提供基本均匀的液体流速分布。

9. 发明授权

US07713889B2 Substrate processing method, photomask manufacturing method, photomask, and device manufacturing method 有权
标题翻译：基板加工方法，光掩模制造方法，光掩模和器件制造方法
公开(公告)号：US07713889B2
公开(公告)日：2010-05-11
申请号：US11600151
申请日：2006-11-16
申请人： Shigeru Hirukawa
发明人： Shigeru Hirukawa
IPC分类号： H01L21/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70108
摘要： A device linewidth characteristic is predicted based on a sharp-edged feature of a projected image of a predetermined pattern (steps 104 to 110), and an exposure condition of the pattern is adjusted based on the device linewidth characteristic that has been predicted (step 112). Then, exposure is performed under the adjusted exposure condition. That is, patterning of a resist on a substrate is performed with the projected image of the pattern (step 114). And, by developing the substrate after patterning, a resist pattern that satisfies a desired device linewidth characteristic is formed on the substrate. Accordingly, by performing etching of the substrate with the resist pattern serving as a mask, a pattern after etching can be formed with a desired linewidth.
摘要翻译：基于预定图案的投影图像的尖锐特征预测装置线宽特性（步骤104至110），并且基于已经预测的装置线宽特性来调整图案的曝光条件（步骤112 ）。然后，在调整后的曝光条件下进行曝光。也就是说，利用图案的投影图像来执行基板上的抗蚀剂的图案化（步骤114）。并且，通过在图案化之后显影衬底，在衬底上形成满足所需器件线宽特性的抗蚀剂图案。因此，通过用抗蚀剂图案作为掩模进行基板的蚀刻，可以以期望的线宽形成蚀刻后的图案。

10. 发明申请

US20090218653A1 Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device 有权
标题翻译：曝光装置，其清洁部件的方法，曝光装置的维护方法，维护装置及其制造方法
公开(公告)号：US20090218653A1
公开(公告)日：2009-09-03
申请号：US12453269
申请日：2009-05-05
申请人： Hiroyuki Nagasaka , Kenichi Shiraishi , Soichi Owa , Shigeru Hirukawa
发明人： Hiroyuki Nagasaka , Kenichi Shiraishi , Soichi Owa , Shigeru Hirukawa
IPC分类号： H01L35/00 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341 , G03F7/707 , G03F7/7085 , G03F7/7095 , G03F7/70958 , G03F7/70975
摘要： A lithography apparatus includes a part having a photocatalytic coating. The lithography apparatus can be an extreme ultraviolet lithography apparatus or an immersion lithography apparatus.
摘要翻译：光刻设备包括具有光催化涂层的部件。光刻设备可以是极紫外光刻设备或浸没光刻设备。

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