发明申请
US20050024612A1 Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method
失效
![Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method](/abs-image/US/2005/02/03/US20050024612A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method
- 专利标题(中):投影光学系统调整方法,预测方法,评价方法,调整方法,曝光方法和曝光装置,程序和装置制造方法
- 申请号:US10927287 申请日:2004-08-27
- 公开(公告)号:US20050024612A1 公开(公告)日:2005-02-03
- 发明人: Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
- 申请人: Shigeru Hirukawa , Toshiharu Nakashima , Kenji Higashi
- 申请人地址: JP Chiyoda-ku
- 专利权人: Nikon Corporation
- 当前专利权人: Nikon Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 优先权: JP2002-056116 20020301; JP2003-043682 20030221
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03B27/68
摘要:
Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).
摘要(中):
测量投影光学系统的波前像差,获得关于波前像差的信息(步骤102)。 此外,通过投影光学系统将标线图案转印到晶片上(步骤104至108)。 然后,显影图案的摇动器,对形成在晶片上的抗蚀剂图像进行线宽测量,并且对沿预定方向延伸的第一线图案和第二线图案的图像的线宽差 测量与第一线图案正交的(步骤112至118)。 并且,根据作为波前像差的扩展的线性宽度差的Zernike多项式的第12项的值和线宽差,调整投影光学系统,使得第9项( 低阶球面像差项)(步骤120至124)。