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1. 发明授权

US06276803B1 Optical path converting optical element, optical path converter, and optical projector and image display apparatus using said optical element 失效
标题翻译：光路转换光学元件，光路转换器以及使用所述光学元件的光学投影仪和图像显示装置
公开(公告)号：US06276803B1
公开(公告)日：2001-08-21
申请号：US08856080
申请日：1997-05-14
申请人： Shigeru Aoyama , Masayuki Shinohara , Tsukasa Yamashita , Hiroshi Kitajima
发明人： Shigeru Aoyama , Masayuki Shinohara , Tsukasa Yamashita , Hiroshi Kitajima
IPC分类号： G03B2114
CPC分类号： G02B27/0927 , G02B5/045 , G02B27/09 , G02B27/0972 , G03B21/208 , G03F7/70058 , H04N5/7416 , H04N5/7441
摘要： A first prism array (34) formed on a prism array plate (32) is arranged so as to confront a second prism array (37) formed on a prism array plate (35). When a light ray (r) that is parallel to an optical axis is transmitted through the first prism array, the light ray r enters into the second prism array (37) while refracted. The light ray that has been refracted by the second prism array (37) becomes an original light ray (r) that is parallel to the optical axis. Therefore, the light ray (r) that has passed through an optical path converting optical element (31) becomes a light ray (r) that is shifted in a direction perpendicular to the optical axis. As a result, the light is split and shuffled by the first prism array (34), so that a luminous intensity distribution thereof is uniformed.
摘要翻译：形成在棱镜阵列板（32）上的第一棱镜阵列（34）被布置成面对形成在棱镜阵列板（35）上的第二棱镜阵列（37）。当平行于光轴的光线（r）透射通过第一棱镜阵列时，光线r在被折射的同时进入第二棱镜阵列（37）。被第二棱镜阵列（37）折射的光线成为平行于光轴的原始光线（r）。因此，通过光路转换光学元件（31）的光线（r）成为在与光轴垂直的方向上偏移的光线（r）。结果，光被第一棱镜阵列（34）分离和混洗，使得其发光强度分布均匀。

2. 发明授权

US4912519A Laser speckle velocity-measuring apparatus 失效
标题翻译：激光斑点速度测量仪
公开(公告)号：US4912519A
公开(公告)日：1990-03-27
申请号：US207864
申请日：1988-06-17
申请人： Tomio Yoshida , Nobuo Nakatsuka , Hiroshi Kitajima , Tsukasa Yamashita
发明人： Tomio Yoshida , Nobuo Nakatsuka , Hiroshi Kitajima , Tsukasa Yamashita
IPC分类号： G01P3/80
CPC分类号： G01P3/806
摘要： There is provided a laser speckle velocity-measuring apparatus comprising: a semiconductor laser to irradiate the light to a moving object; first and second photo sensing devices whose light receiving points are arranged in the moving direction of the objects at a predetermined distance so as to be away from each other; a clock signal generating and control circuit for determining a clock frequency of the clock signal so that the number of clocks of the clock signal is always set to a constant value when the delay time of the photo sensing signal of the second photo sensing device for the photo sensing signal of the first photo sensing device is measured by the clock signals; and an arithmetic operating circuit for counting the clock signals and calculating the length, moving distance, or velocity of the object on the basis of the count value. With this apparatus, the detecting time of the length or velocity of the moving object can be reduced and the measuring processes can be performed in a real-time manner.
摘要翻译：提供了一种激光散斑速度测量装置，包括：将光照射到移动物体的半导体激光器; 第一和第二感光装置，其光接收点沿物体的移动方向以预定距离布置成彼此远离; 时钟信号发生和控制电路，用于确定时钟信号的时钟频率，使得当第二感光装置的感光信号的延迟时间用于时钟信号的延迟时间时，时钟信号的时钟数总是设置为恒定值第一感光装置的感光信号由时钟信号测量; 以及算术运算电路，用于根据计数值对时钟信号进行计数并计算物体的长度，移动距离或速度。利用该装置，可以减少移动物体的长度或速度的检测时间，并且可以实时地进行测量处理。

3. 发明授权

US07034369B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07034369B2
公开(公告)日：2006-04-25
申请号：US10913551
申请日：2004-08-09
申请人： Tsunetoshi Arikado , Takaaki Kawahara , Kazuyoshi Torii , Hiroshi Kitajima , Seiichi Miyazaki
发明人： Tsunetoshi Arikado , Takaaki Kawahara , Kazuyoshi Torii , Hiroshi Kitajima , Seiichi Miyazaki
IPC分类号： H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译：硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。高k膜含有过渡金属，铝，硅和氧。高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小从这些界面，并成为高k电影中心部分中最低的。

4. 发明授权

US6164500A Method of removing air from liquid channel of liquid filling apparatus 失效
标题翻译：从液体灌装设备的液体通道中除去空气的方法
公开(公告)号：US6164500A
公开(公告)日：2000-12-26
申请号：US427040
申请日：1999-10-26
申请人： Kazuo Abe , Makoto Fukui , Hiroshi Kitajima , Michio Ueda
发明人： Kazuo Abe , Makoto Fukui , Hiroshi Kitajima , Michio Ueda
IPC分类号： B65B3/32 , B67C3/20 , B67C3/28 , B67D5/40
CPC分类号： B67C3/206 , B67C3/002 , B67C3/28
摘要： For use in a liquid filling apparatus having a liquid channel extending from a liquid tank to a filling nozzle via a metering cylinder, an upper check valve disposed upstream from the metering cylinder and a lower check valve disposed downstream from the cylinder, a method of removing air from the interior of the liquid channel comprises the liquid feeding step of closing the lower check valve, opening the upper check valve and feeding the liquid to be filled from the liquid tank to the liquid channel to an upstream side of the lower check valve; the primary air removing step of closing the upper check valve, opening the lower check valve, and causing the liquid to flow from the upstream side of the lower check valve downstream from the lower check valve while allowing air at a downstream side of the lower check valve to flow in between the valves to replace the liquid at the upstream side of the lower check valve with the air at the downstream side of the lower check valve; and the secondary air removing step of closing the lower check valve, opening the upper check valve, causing the air to flow from between the valves to an upstream side of the upper check valve and discharging the air from the interior of the liquid channel through the liquid tank.
摘要翻译：用于具有液体通道的液体填充装置，该液体通道经由计量筒从液体罐延伸至填充喷嘴，设置在计量气缸上游的上止回阀和设置在气缸下游的下止回阀，来自液体通道内部的空气包括关闭下止回阀的液体供给步骤，打开上止回阀并将待填充液体从液体槽输送到液体通道到下止回阀的上游侧; 一次空气除去步骤，关闭上止回阀，打开下止回阀，并使液体从下止回阀的下游侧从下止回阀下游流动，同时允许下检查的下游侧的空气阀门在阀门之间流动，以下单向阀下游侧的空气更换下止回阀的上游侧的液体; 以及二次空气除去步骤，其关闭下止回阀，打开上止回阀，使空气从阀之间流动到上止回阀的上游侧，并将空气从液体通道的内部排出通过液罐

5. 发明授权

US5950691A High-speed liquid filling machine 失效
标题翻译：高速液体灌装机
公开(公告)号：US5950691A
公开(公告)日：1999-09-14
申请号：US3373
申请日：1998-01-06
申请人： Kazuo Abe , Hiroshi Kitajima , Masakatsu Kondo , Michio Ueda
发明人： Kazuo Abe , Hiroshi Kitajima , Masakatsu Kondo , Michio Ueda
IPC分类号： B65B3/26 , B65B3/24 , B65B3/32 , B67C3/28 , B65B1/04
CPC分类号： B65B3/32 , B65B3/24
摘要： A high-speed liquid filling machine comprises a conveyor 11 for transporting containers C so as to stop the containers successively at a primary filling station S1 and at secondary filling station S2, a primary filling device 21 and a secondary filling device 22 arranged at the primary and secondary filling stations S1, S2 respectively, a supply device for supplying the same kind of liquid to be filled into the primary and secondary filling devices 21, 22, and a control device for controlling the amount to be filled in by the primary filling device 21 and the amount to be filled in by the secondary filling device 22 so that the combined amount to be filled in by the devices 21, 22 is equal to the capacity of each of the containers.
摘要翻译：一种高速液体灌装机包括一个用于运输容器C以便在初级加油站S1和二级加油站S2连续停止容器的输送机11，一个主要装料装置21和一个第二装料装置22，和二次加油站S1，S2，用于将相同种类的待填充液体的供给装置供应到一次和二次填充装置21,22中，以及用于控制由主填充装置填充量的控制装置 21和由二次填充装置22填充的量，使得由装置21,22填充的组合量等于每个容器的容量。

6. 发明申请

US20070161197A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070161197A1
公开(公告)日：2007-07-12
申请号：US11640892
申请日：2006-12-19
申请人： Tomoko Matsuda , Hiroshi Kitajima
发明人： Tomoko Matsuda , Hiroshi Kitajima
IPC分类号： H01L21/336
CPC分类号： H01L29/665 , H01L21/28079 , H01L29/495 , H01L29/66545 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A junction leak current of a transistor including a silicide layer provided on a source/drain region is to be suppressed. After forming a gate electrode over a chip-side surface of a silicon substrate, an insulating layer is formed over the gate electrode. The insulating layer is etched back so as to form a sidewall that covers the sidewall of the gate electrode, and a region adjacent to the sidewall on the chip-side surface of the silicon substrate, where a source/drain region is to be formed, is etched so as to form a generally horizontal scraped section on the chip-side surface. Then a dopant is implanted to the silicon substrate around the gate electrode, to thereby form the source/drain region. On the chip-side surface of the silicon substrate where the gate electrode is provided, a Ni layer is formed, so that the Ni layer is reacted with the silicon substrate thus to form a Ni-silicide layer.
摘要翻译：要抑制设置在源/漏区上的包含硅化物层的晶体管的结漏电流。在硅衬底的芯片侧表面上形成栅电极之后，在栅极上形成绝缘层。蚀刻绝缘层以形成覆盖栅电极的侧壁的侧壁和与要在其上形成源极/漏极区的硅衬底的芯片侧表面上的侧壁相邻的区域，被蚀刻以在芯片侧表面上形成大致水平的刮削部分。然后将掺杂剂注入到围绕栅电极的硅衬底中，从而形成源/漏区。在设置有栅电极的硅衬底的芯片侧表面上形成Ni层，使Ni层与硅衬底反应形成Ni-硅化物层。

7. 发明申请

US20050045970A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050045970A1
公开(公告)日：2005-03-03
申请号：US10913551
申请日：2004-08-09
申请人： Tsunetoshi Arikado , Takaaki Kawahara , Kazuyoshi Torii , Hiroshi Kitajima , Seiichi Miyazaki
发明人： Tsunetoshi Arikado , Takaaki Kawahara , Kazuyoshi Torii , Hiroshi Kitajima , Seiichi Miyazaki
IPC分类号： C23C16/42 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译：硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。高k膜包含过渡金属，铝，硅和氧。高k膜中的硅的浓度高于与SiO 2膜的界面附近和与栅电极的界面附近的过渡金属和铝的浓度。此外，优选的是，至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着与这些界面的距离而逐渐减小，并且变得最低在高k电影的中心部分。

8. 发明授权

US5824200A Generation of electrolytically active water and wet process of a semiconductor substrate 失效
标题翻译：生成电解活性水和半导体衬底的湿法
公开(公告)号：US5824200A
公开(公告)日：1998-10-20
申请号：US832199
申请日：1997-04-08
申请人： Hiroshi Kitajima , Yoshimi Shiramizu
发明人： Hiroshi Kitajima , Yoshimi Shiramizu
IPC分类号： H01L21/306 , B08B3/08 , C02F1/46 , C02F1/461 , C02F1/467 , H01L21/00 , H01L21/30 , H01L21/304 , H01L21/3063 , H01L21/308 , C25B9/00
CPC分类号： C02F1/4618 , C02F1/4674 , C02F2201/46115 , C02F2201/4619 , C02F2201/46195 , H01L21/00
摘要： There is provided a method of, and an apparatus for obtaining electrolytically activated water having stable characteristics comprising steps of bringing a gas containing at least one of chlorine, hydrogen chloride, hydrogen bromide and hydrogen iodide into contact with a liquid in an anode cell of an electrolytic cell or a liquid supplied thereto and/or bringing ammonia into contact with a liquid in a cathode cell of the electrolytic cell, or a liquid supplied thereto to dissolve the gas to thereby electrolyze this liquid. The resulting electrolytically activated water is optimal as the wet treating solution adapted for semiconductor substrate.
摘要翻译：提供了一种获得具有稳定特性的电解活化水的方法和装置，包括以下步骤：将含有氯，氯化氢，溴化氢和碘化氢中的至少一种的气体与阳极池中的液体接触电解槽或供给到其中的液体和/或使氨与电解槽的阴极单元中的液体接触或供给到其中的液体溶解气体，从而电解该液体。所得到的电解活化水是适用于半导体衬底的湿处理溶液最佳的。

9. 发明授权

US5309010A Semiconductor device having improved thin film transistors 失效
标题翻译：具有改进的薄膜晶体管的半导体器件
公开(公告)号：US5309010A
公开(公告)日：1994-05-03
申请号：US888806
申请日：1992-05-27
申请人： Hiroshi Kitajima
发明人： Hiroshi Kitajima
IPC分类号： H01L21/8244 , H01L27/11 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/785 , H01L27/1108 , H01L27/1211 , Y10S257/904
摘要： A semiconductor device comprising a MOS transistor made at the surface of a p-type silicon substrate with a ridge on the surface of it and covered with an insulating film. The gate electrode of the MOS transistor has a configuration of the ridge covered with the insulating film. The semiconductor further comprises a TFT build under the utilization of the ridge. The channel region of the TFT is formed only on the side face(s) of the gate electrode. The source and drain regions extending across the ridge are disposed on the opposite sides of, and connect to, the channel region. Thus the channel region of the TFT is perpendicular to the surface of the silicon substrate, and the channel current flows parallel to the surface of the silicon substrate. The channel width of the TFT is determined substantially by the height of the gate electrode of MOS transistor, and hence becomes narrower than the minimum processible size. This TFT therefore is capable of size reduction. It has further advantages of reduced short channel effect and less leak current particularly when turned off.
摘要翻译：一种半导体器件，包括在p型硅衬底的表面上形成有在其表面上具有脊并被绝缘膜覆盖的MOS晶体管。 MOS晶体管的栅电极具有被绝缘膜覆盖的脊的构造。半导体还包括在脊的利用下的TFT构造。 TFT的沟道区仅形成在栅电极的侧面上。延伸穿过脊的源极和漏极区域设置在沟道区域的相对侧并且连接到沟道区域。因此，TFT的沟道区域垂直于硅衬底的表面，并且沟道电流平行于硅衬底的表面流动。 TFT的通道宽度基本上由MOS晶体管的栅电极的高度确定，因此变得比最小可加工尺寸窄。因此，该TFT能够减小尺寸。具有减少短通道效应和更少泄漏电流的优点，特别是在关闭时。

10. 发明授权

US4213228A Device for cutting off the neck meat of a fowl 失效
标题翻译：用于切断家禽脖子肉的装置
公开(公告)号：US4213228A
公开(公告)日：1980-07-22
申请号：US956802
申请日：1978-11-01
申请人： Seigi Komatsu , Hiroshi Kitajima
发明人： Seigi Komatsu , Hiroshi Kitajima
IPC分类号： A22C21/00
CPC分类号： A22C21/0069 , Y10T83/364 , Y10T83/6667
摘要： A device for cutting off the neck meat of a fowl in which the neck of the fowl is held on a support equipped with a suction hole for attracting the meat and the meat is cut by a blade disposed movably to face said suction holes of said support. Said cutting blade is a straight member and is allowed to reciprocate along the length of the suction hole.
摘要翻译：一种用于切断将家禽颈部保持在具有用于吸引肉和肉的吸入孔的支撑物的支架上的家禽颈部的装置由可移动地设置以面对所述支撑件的所述吸入孔的刀片切割。所述切割刀片是直的部件，并允许其沿吸入孔的长度往复运动。

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