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    • 1. 发明授权
    • Apparatus for defreezing frozen foods
    • 解冻冷冻食品的设备
    • US4913223A
    • 1990-04-03
    • US322395
    • 1989-03-13
    • Shigeo MizunoYuji WakatukiNobuya Suzuki
    • Shigeo MizunoYuji WakatukiNobuya Suzuki
    • A23L3/365A47J39/00F25D21/00
    • F25D21/002A23L3/365A47J39/003F25B2700/21172F25B2700/21173Y10S165/918
    • A defrosting apparatus comprises a housing defining therein a frozen food storage space. Within the housing, air is heated and supplied to the storage space through a hot-air entrance passage formed between a side wall of the housing and one of paired shelf receiving members which cooperate to define the storage space. The hot-air entrance passage incorporates a guide plate having a communication aperture provided at a lower end. The guide plate cooperates with the side wall of the housing and one of the shelf receiving members to force the hot air fed from a ventilating fan to flow first downwardly along the hot-air inlet passage. The hot-air flow is then changed in the flow direction upon passing through the communication aperture so as to flow upwardly. In the course of flowing upwardly, the hot air is fed into the storage space successively through a plurality of inlet ports formed in one of the shelf receiving members.
    • 除霜装置包括在其中限定冷冻食品储存空间的壳体。 在壳体内,空气通过形成在壳体的侧壁和协作以限定存储空间的成对的货架接收构件中的一个之间的热空气入口通道被加热并供应到存储空间。 热空气入口通道包括具有设置在下端的连通孔的引导板。 引导板与壳体的侧壁和搁架接收构件中的一个协作以迫使从通风扇供给的热空气沿着热空气入口通道首先向下流动。 然后,热气流在通过连通孔时沿流动方向改变以向上流动。 在向上流动的过程中,热空气依次通过形成在一个搁架接收构件中的多个入口端口进入存储空间。
    • 3. 发明授权
    • Quartz glass crucible for the pulling up of silicon single crystal
    • 石英玻璃坩埚用于提升硅单晶
    • US07299658B2
    • 2007-11-27
    • US10559086
    • 2004-05-21
    • Yasuo OhamaTakayuki TogawaShigeo Mizuno
    • Yasuo OhamaTakayuki TogawaShigeo Mizuno
    • C03B11/08C30B35/00
    • C03B19/095C03B2201/03C30B15/10Y02P40/57Y10S65/08Y10S117/90Y10T117/10
    • A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
    • 一种用于拉起单晶硅的石英玻璃坩埚,其中至少在其弯曲部分中具有由合成石英玻璃构成的具有低Al浓度的透明内层的三层结构, 透明或不透明的中间层由天然石英玻璃或天然和合成石英玻璃的混合物组成,具有高Al浓度,不透明的外层由天然石英玻璃组成,Al浓度高于 中间层。 石英玻璃坩埚在透明内层的变形中减少,并且抑制与单晶上拉相关联的石英玻璃坩埚的溶解量的变化,并且实现均匀的氧浓度 在单晶的纵向上。
    • 4. 发明申请
    • Quartz glass crucible for the pulling up of silicon single crystal
    • 用于提升硅单晶的石英玻璃坩埚
    • US20060144327A1
    • 2006-07-06
    • US10559086
    • 2004-05-21
    • Yasuo OhamaTakayuki TogawaShigeo Mizuno
    • Yasuo OhamaTakayuki TogawaShigeo Mizuno
    • C30B11/00
    • C03B19/095C03B2201/03C30B15/10Y02P40/57Y10S65/08Y10S117/90Y10T117/10
    • A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
    • 一种用于拉起单晶硅的石英玻璃坩埚,其中至少在其弯曲部分中具有由合成石英玻璃构成的具有低Al浓度的透明内层的三层结构, 透明或不透明的中间层由天然石英玻璃或天然和合成石英玻璃的混合物组成,具有高的Al浓度,不透明的外层由天然石英玻璃组成,Al浓度高于 中间层。 石英玻璃坩埚在透明内层的变形中减少,并且抑制与单晶上拉相关联的石英玻璃坩埚的溶解量的变化,并且实现均匀的氧浓度 在单晶的纵向上。
    • 9. 发明授权
    • Quart crucible with large diameter for pulling single crystal and method
of producing the same
    • 大直径拉拔单晶的art坩埚及其制造方法
    • US6136092A
    • 2000-10-24
    • US377103
    • 1999-08-19
    • Tatsuhiro SatoShigeo MizunoMitsuo MatsumuraHiroyuki Watanabe
    • Tatsuhiro SatoShigeo MizunoMitsuo MatsumuraHiroyuki Watanabe
    • C03B20/00C03B19/09C30B15/10C30B29/06C30B35/00C30B23/00
    • C30B15/10C03B19/095C30B35/002Y10T428/1317
    • A crucible with 22 inches or more in inner diameter, which has a small deformation of the body under exposure to abundant heat radiation during pulling a single crystal, and which has no practical problem, and a method of producing the same are disclosed. The method comprises the steps of: feeding first silicon dioxide powder along an inner surface of a rotating mold having a gas permeable wall to form a piled up layer of the first silicon dioxide powder; heating the piled up layer from the inside space of the mold to have the first silicon dioxide powder molten to provide the opaque outer layer as a substrate, while vacuum suction is effected through the wall; generating a high temperature gas atmosphere in an inside space of the substrate during or after the formation of the opaque outer layer; feeding second silicon dioxide powder into the high temperature gas atmosphere to have the second silicon dioxide powder molten at least partly; and directing the second silicon dioxide powder in an at least partly molten form toward an inner surface of the substrate to have the second silicon dioxide powder deposited on the inner surface of the substrate to thereby form the transparent inner layer thereon, the transparent inner layer being of a predetermined thickness and substantially free of bubbles.
    • 一种内径为22英寸或更大的坩埚,其在牵引单晶时在暴露于大量热辐射的同时具有较小的变形,并且没有实际的问题,并且公开了其制造方法。 该方法包括以下步骤:沿着具有透气壁的旋转模具的内表面供给第一二氧化硅粉末以形成第一二氧化硅粉末的堆积层; 从模具的内部空间加热堆叠层以使第一二氧化硅粉末熔融,以提供不透明外层作为基底,同时通过壁进行真空吸力; 在形成不透明外层期间或之后在基板的内部空间中产生高温气体气氛; 将第二二氧化硅粉末进料到高温气体气氛中以使第二二氧化硅粉末至少部分熔融; 并且将所述第二二氧化硅粉末以至少部分熔融的形式引导到所述基板的内表面,以使所述第二二氧化硅粉末沉积在所述基板的内表面上,从而在其上形成所述透明内层,所述透明内层为 具有预定厚度并且基本上没有气泡。