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    • 2. 发明授权
    • Capacitive type semiconductor accelerometer
    • 电容式半导体加速度计
    • US5243861A
    • 1993-09-14
    • US755838
    • 1991-09-06
    • Benjamin KloeckSeiko SuzukiShigeki TsuchitaniMasayuki MikiMasahiro MatsumotoKazuo SatoAkira KoideNorio IchikawaYukiko KawaiHiromichi Ebine
    • Benjamin KloeckSeiko SuzukiShigeki TsuchitaniMasayuki MikiMasahiro MatsumotoKazuo SatoAkira KoideNorio IchikawaYukiko KawaiHiromichi Ebine
    • B81B3/00B81B7/00G01P15/08G01P15/125
    • B81B7/007G01P15/0802G01P15/125G01P2015/0828H01L2224/45144H01L2224/48463
    • A capacitive type semiconductor accelerometer has an intermediate silicon plate of n type conductivity including a movable electrode constituting a pendulum mass formed within the intermediate silicon plate and supported thereby via a beam so as to permit movement in a direction perpendicular to its plane. A first conductive island is formed within the intermediate plate and is immovably supported thereby via a first insulating leg so as to be isolated therefrom, and an upper glass plate is anodic bonded to the intermediate silicon plate. A first stationary electrode is formed on the upper glass plate at the position facing one face of the movable electrode with a predetermined gap. A lower glass plate is anodic bonded to the intermediate silicon plate and a second stationary electrode is formed on the lower glass plate at the position facing the other face of the movable electrode with a predetermined gap. First, second and third pads are disposed in common on the lower glass plate at the outside of the intermediate silicon plate, the first pad being electrically connected to the first stationary electrode via a first thin film lead formed on the lower glass plate and the first conductive island, the second pad being electrically connected to the movable electrode via a second thin film lead formed on the lower glass plate and the intermediate silicon plate and the third pad being electrically connected to the second stationary electrode via a third thin film lead formed on the lower glass plate.
    • 电容式半导体加速度计具有n型导电性的中间硅板,其包括形成在中间硅板内的摆锤块的可动电极,并通过光束被支撑,以允许沿垂直于其平面的方向移动。 第一导电岛形成在中间板内,并通过第一绝缘腿不可移动地支撑,以便与之隔离,并且上玻璃板阳极接合到中间硅板。 第一固定电极形成在上玻璃板上,以与预定间隙相对的可移动电极的一个面的位置。 下玻璃板阳极接合到中间硅板上,并且在与可移动电极的另一面相对的位置处以预定间隙形成在下玻璃板上的第二固定电极。 首先,第二和第三焊盘共同设置在中间硅板的外侧的下玻璃板上,第一焊盘通过形成在下玻璃板上的第一薄膜引线和第一焊盘电连接到第一固定电极 所述第二焊盘通过形成在所述下玻璃板上的第二薄膜引线电连接到所述可动电极,并且所述中间硅板和所述第三焊盘通过形成在所述导电岛上的第三薄膜引线电连接到所述第二固定电极, 下玻璃板。