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1. 发明授权

US5915172A Method for manufacturing LCD and TFT 失效
标题翻译：制造LCD和TFT的方法
公开(公告)号：US5915172A
公开(公告)日：1999-06-22
申请号：US889322
申请日：1997-07-08
申请人： Shigeaki Noumi , Kazuhiko Noguchi , Takeshi Kubota , Masami Hayashi , Takeshi Morita
发明人： Shigeaki Noumi , Kazuhiko Noguchi , Takeshi Kubota , Masami Hayashi , Takeshi Morita
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/786 , H01L21/00
CPC分类号： H01L29/66765 , H01L21/02178 , H01L21/02194 , H01L21/02244 , H01L21/02258 , H01L21/28008 , H01L21/31662 , G02F2001/136295
摘要： Method for manufacturing TFTs including steps of forming a control electrode and control electrode line on a substrate, forming insulating film on the control electrode and the control electrode line, cleaning the substrate with the insulating film formed by a chemical or physical means, forming oxide film on the surface of the control electrode and control electrode line exposed by a film lacking portion generated in the insulating film after cleaning, forming a semiconductor layer via the insulating film on the control electrode, and forming a pair of electrodes constituting a semiconductor element together with the semiconductor layer.
摘要翻译：制造TFT的方法，包括在基板上形成控制电极和控制电极线的步骤，在控制电极和控制电极线上形成绝缘膜，用化学或物理手段形成的绝缘膜清洗基板，形成氧化膜在由清洁后的绝缘膜中产生的薄膜缺失部分露出的控制电极和控制电极线的表面上，经由控制电极上的绝缘膜形成半导体层，并形成一对构成半导体元件的电极和半导体层。

2. 发明授权

US06236062B1 Liquid crystal display and thin film transistor with capacitive electrode structure 有权
标题翻译：液晶显示器和具有电容电极结构的薄膜晶体管
公开(公告)号：US06236062B1
公开(公告)日：2001-05-22
申请号：US09166175
申请日：1998-10-05
申请人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
发明人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
IPC分类号： H01L2900
CPC分类号： H01L29/66765 , G02F1/1368 , H01L29/78669
摘要： A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+ a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+ a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+ a-Si:H film 5a.
摘要翻译：提供了一种薄膜晶体管的制造方法，其中在光刻图案中防止干斑的发生和由于干斑引起的欧姆接触层（n + a-Si：H膜）的蚀刻残留物的出现半导体层和欧姆接触层进入岛，而不用任何其他设备进一步处理。形成形成TFT的半导体层的a-Si：H膜4a和n + a-Si：H膜5a之后形成欧姆接触层，使用相同的等离子体CVD装置连续进行N2气体等离子体放电，从而在n + a-Si：H膜5a的表面层上形成具有亲水性的非常薄的氮化硅膜6。

3. 发明授权

US06399428B2 Liquid crystal display and manufacturing process of thin film transistor used therein 有权
标题翻译：其中使用的薄膜晶体管的液晶显示和制造工艺
公开(公告)号：US06399428B2
公开(公告)日：2002-06-04
申请号：US09778786
申请日：2001-02-01
申请人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
发明人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
IPC分类号： H01L2904
CPC分类号： H01L29/66765 , G02F1/1368 , H01L29/78669
摘要： A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+a-Si:H film 5a.
摘要翻译：提供了一种薄膜晶体管的制造方法，其中在光刻工艺中防止了由于干斑而出现干点和出现欧姆接触层（n + a-Si：H膜）的蚀刻残留物将半导体层和欧姆接触层图案化成岛，而不用任何其他设备进一步处理。形成形成TFT的半导体层的a-Si：H膜4a和n + a-Si：H膜 5a，其形成欧姆接触层，使用相同的等离子体CVD装置连续进行N2气体等离子体放电，从而在n + a-Si：H膜的表面层上形成具有亲水性的非常薄的氮化硅膜6 5a。

4. 发明授权

US5025167A Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5025167A
公开(公告)日：1991-06-18
申请号：US533769
申请日：1990-06-06
申请人： Soichiro Okuda , Tetsuya Nakanishi , Shigeo Sasaki , Kazuhiko Noguchi
发明人： Soichiro Okuda , Tetsuya Nakanishi , Shigeo Sasaki , Kazuhiko Noguchi
IPC分类号： H01J37/09 , H01J37/304 , H01J37/317
CPC分类号： H01J37/09 , H01J37/304 , H01J37/3171
摘要： An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
摘要翻译：离子注入装置包括离子束测量装置，用于测量和分析投影在用于离子注入的基板上的光束的形状和由离子束获得的电流量，分析狭缝部件，其具有宽度可变的开口，位于离子束轨道中以仅提取注入离子;以及成形狭缝构件，其具有位于分析狭缝构件后面的宽度可变的开口，以确定要投影到用于离子注入的衬底上的光束的形状其中分析狭缝部件和成形狭缝部件的开口的宽度基于由离子束测量装置测量的结果获得的光束形状和电流量而改变。

5. 发明申请

US20080296923A1 VEHICLE DASHBOARD ACCOMMODATION STRUCTURE 有权
标题翻译：车载客舱结构
公开(公告)号：US20080296923A1
公开(公告)日：2008-12-04
申请号：US12099487
申请日：2008-04-08
申请人： Hideki Hirata , Kazuhiko Noguchi
发明人： Hideki Hirata , Kazuhiko Noguchi
IPC分类号： B60N3/10
CPC分类号： B60R7/06 , B60N3/101 , B60N3/104 , Y10S224/926
摘要： A dashboard of a vehicle includes an accommodation unit provided at a longitudinal end of the dashboard and positioned adjacent to a door and a side mirror located outside the door adjacent to the accommodation unit, the accommodation unit configured to receive an article, and the accommodation unit including a lid, wherein the lid is configured to stand up adjacent to the side mirror when in an open position.
摘要翻译：车辆的仪表板包括设置在仪表板的纵向端部并且邻近门定位的定位单元和位于邻近该住宿单元的门外侧的侧面反射镜，所述容纳单元被配置为接收物品，并且所述收纳单元包括盖，其中所述盖被构造成在处于打开位置时邻近所述侧视镜站立。

6. 发明授权

US5387843A Ion source having plasma chamber, an electron source, and a plasma power supply 失效
标题翻译：具有等离子体室的离子源，电子源和等离子体电源
公开(公告)号：US5387843A
公开(公告)日：1995-02-07
申请号：US978372
申请日：1992-11-18
申请人： Takahisa Nagayama , Naomitsu Fujishita , Kazuhiko Noguchi , Hidenobu Murakami
发明人： Takahisa Nagayama , Naomitsu Fujishita , Kazuhiko Noguchi , Hidenobu Murakami
IPC分类号： H01J27/16 , H01J27/18 , H01J37/08 , H01J7/24
CPC分类号： H01J27/18 , H01J2237/082 , H01J2237/317
摘要： The present invention aims to extract a large electron beam and extend the service life of an electron source by effectively radiating an electron beam with low energy from a plasma chamber toward an ion extraction port, and optimally neutralizing space charges of ions in the vicinity of the ion extraction port. An electron source is installed behind a plasma chamber to control an extraction power supply, an electron accelerating power supply, and a lens power supply. Thereby, an electron beam is extracted from the power source, and accelerated. Then, the electron beam is carried through an electric field lens at a high speed, decelerated in the vicinity of the plasma chamber, then converged to radiate toward the ion extraction port. An aperture is installed at a crossover point of the electron beam to diminish backward flow of ionic gas from the plasma chamber to the electron source.
摘要翻译：本发明的目的是通过从等离子体室向离子提取口有效地辐射低能量的电子束，从而提取大电子束并延长电子源的使用寿命，并最佳地中和离子附近的离子的空间电荷离子提取口。电子源安装在等离子体室后面以控制提取电源，电子加速电源和透镜电源。由此，从电源提取电子束，并加速。然后，电子束被高速运送通过电场透镜，在等离子体室附近减速，然后会聚而向离子提取口辐射。孔径安装在电子束的交叉点处，以减少离子气体从等离子体腔向电子源的向后流动。

7. 发明授权

US5329129A Electron shower apparatus including filament current control 失效
标题翻译：电子淋浴设备包括灯丝电流控制
公开(公告)号：US5329129A
公开(公告)日：1994-07-12
申请号：US849238
申请日：1992-03-10
申请人： Kazuhiro Shono , Naomitsu Fujishita , Kazuhiko Noguchi , Takahisa Nagayama , Shigeo Sasaki
发明人： Kazuhiro Shono , Naomitsu Fujishita , Kazuhiko Noguchi , Takahisa Nagayama , Shigeo Sasaki
IPC分类号： H01J37/02 , H01J37/317 , H01J37/04
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0045
摘要： There is disclosed an electron shower apparatus which eliminates the adverse effect of a magnetic field on electrons and which provides electrons in sufficient quantity when primary electrons having low energy are employed. In the apparatus, the magnetic field generated by a filament current is decreased or eliminated by pulsing the filament current or by passing a current opposite in direction to the filament current in the vicinity of the filament current.
摘要翻译：公开了一种电子喷淋装置，其消除了磁场对电子的不利影响，并且当使用具有低能量的一次电子时，其提供足够量的电子。在该装置中，由灯丝电流产生的磁场通过脉冲灯丝电流或通过在灯丝电流附近通过与灯丝电流相反的方向的电流来减小或消除。

8. 发明授权

US07780212B2 Vehicle dashboard accommodation structure 有权
标题翻译：车辆仪表板住宿结构
公开(公告)号：US07780212B2
公开(公告)日：2010-08-24
申请号：US12099487
申请日：2008-04-08
申请人： Hideki Hirata , Kazuhiko Noguchi
发明人： Hideki Hirata , Kazuhiko Noguchi
IPC分类号： B60R7/06
CPC分类号： B60R7/06 , B60N3/101 , B60N3/104 , Y10S224/926
摘要： A dashboard of a vehicle includes an accommodation unit provided at a longitudinal end of the dashboard and positioned adjacent to a door and a side mirror located outside the door adjacent to the accommodation unit, the accommodation unit configured to receive an article, and the accommodation unit including a lid, wherein the lid is configured to stand up adjacent to the side mirror when in an open position.
摘要翻译：车辆的仪表板包括设置在仪表板的纵向端部并且邻近门定位的定位单元和位于邻近该住宿单元的门外侧的侧面反射镜，所述容纳单元被配置为接收物品，并且所述收纳单元包括盖，其中所述盖被构造成在处于打开位置时邻近所述侧视镜站立。

9. 发明授权

US5132545A Ion implantation apparatus 失效
标题翻译：离子植入装置
公开(公告)号：US5132545A
公开(公告)日：1992-07-21
申请号：US568191
申请日：1990-08-16
申请人： Kazuhiro Shono , Shigeo Sasaki , Susumu Katoh , Masao Naitou , Tetsuya Nakanishi , Naomitsu Fujishita , Kazuhiko Noguchi , Masayasu Tanjo
发明人： Kazuhiro Shono , Shigeo Sasaki , Susumu Katoh , Masao Naitou , Tetsuya Nakanishi , Naomitsu Fujishita , Kazuhiko Noguchi , Masayasu Tanjo
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/302 , H01J37/3171 , H01J2237/24542
摘要： An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

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