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1. 发明授权

US06236062B1 Liquid crystal display and thin film transistor with capacitive electrode structure 有权
标题翻译：液晶显示器和具有电容电极结构的薄膜晶体管
公开(公告)号：US06236062B1
公开(公告)日：2001-05-22
申请号：US09166175
申请日：1998-10-05
申请人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
发明人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
IPC分类号： H01L2900
CPC分类号： H01L29/66765 , G02F1/1368 , H01L29/78669
摘要： A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+ a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+ a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+ a-Si:H film 5a.
摘要翻译：提供了一种薄膜晶体管的制造方法，其中在光刻图案中防止干斑的发生和由于干斑引起的欧姆接触层（n + a-Si：H膜）的蚀刻残留物的出现半导体层和欧姆接触层进入岛，而不用任何其他设备进一步处理。形成形成TFT的半导体层的a-Si：H膜4a和n + a-Si：H膜5a之后形成欧姆接触层，使用相同的等离子体CVD装置连续进行N2气体等离子体放电，从而在n + a-Si：H膜5a的表面层上形成具有亲水性的非常薄的氮化硅膜6。

2. 发明授权

US06621537B1 Active matrix liquid crystal display and manufacturing method of the same 有权
标题翻译：有源矩阵液晶显示及制造方法相同
公开(公告)号：US06621537B1
公开(公告)日：2003-09-16
申请号：US09412758
申请日：1999-10-05
申请人： Nobuhiro Nakamura , Kouji Yabushita , Osamu Ito
发明人： Nobuhiro Nakamura , Kouji Yabushita , Osamu Ito
IPC分类号： G02F1136
CPC分类号： G02F1/136213 , G02F2001/136295
摘要： An electrooptical element used in liquid crystal display accordance to this invention is provided with a storage capacitance wiring group and collective drawing wiring. At the time of wet etching of transparent conductor film of pixel electrodes, all wiring of the storage capacitance wiring group are electrically separated each other, and after wet etching of the pixel electrodes, all of the storage capacitance wiring group are electrically connected with collective drawing wiring. The capacitance value of the storage capacitance wiring is small at the time of wet etching of the pixel electrodes, thus preventing the corrosion of the storage capacitance wiring.
摘要翻译：在根据本发明的液晶显示器中使用的电光元件设置有存储电容布线组和集体绘图布线。在对像素电极的透明导体膜进行湿式蚀刻时，辅助电容布线组的所有布线彼此电分离，并且在湿式蚀刻像素电极之后，所有保持电容布线组与集合图形电连接接线。在湿蚀刻像素电极时，存储电容布线的电容值较小，从而防止了存储电容布线的腐蚀。

3. 发明授权

US06399428B2 Liquid crystal display and manufacturing process of thin film transistor used therein 有权
标题翻译：其中使用的薄膜晶体管的液晶显示和制造工艺
公开(公告)号：US06399428B2
公开(公告)日：2002-06-04
申请号：US09778786
申请日：2001-02-01
申请人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
发明人： Tadaki Nakahori , Tetsuya Sakoguchi , Kazuhiko Noguchi , Kouji Yabushita , Takeshi Kubota
IPC分类号： H01L2904
CPC分类号： H01L29/66765 , G02F1/1368 , H01L29/78669
摘要： A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+a-Si:H film 5a.
摘要翻译：提供了一种薄膜晶体管的制造方法，其中在光刻工艺中防止了由于干斑而出现干点和出现欧姆接触层（n + a-Si：H膜）的蚀刻残留物将半导体层和欧姆接触层图案化成岛，而不用任何其他设备进一步处理。形成形成TFT的半导体层的a-Si：H膜4a和n + a-Si：H膜 5a，其形成欧姆接触层，使用相同的等离子体CVD装置连续进行N2气体等离子体放电，从而在n + a-Si：H膜的表面层上形成具有亲水性的非常薄的氮化硅膜6 5a。

4. 发明授权

US06353464B1 TFT array substrate, liquid crystal display using TFT array substrate, and manufacturing method thereof in which the interlayer insulating film covers the guard resistance and the short ring 有权
标题翻译： TFT阵列基板，使用TFT阵列基板的液晶显示器及其制造方法，其中层间绝缘膜覆盖防护电阻和短环
公开(公告)号：US06353464B1
公开(公告)日：2002-03-05
申请号：US09437090
申请日：1999-11-09
申请人： Shigeaki Noumi , Kouji Yabushita
发明人： Shigeaki Noumi , Kouji Yabushita
IPC分类号： G02F1136
CPC分类号： G02F1/136204 , G02F1/1345 , G02F1/136227
摘要： A manufacturing method of a liquid crystal display is provided. The liquid crystal display having a picture element electrode formed on the uppermost layer of a structure is capable of reducing connection resistance between picture element electrode and drain electrode through interlayer insulating film. At the time of forming the picture element electrode, ITO film can be patterned into a desirable pattern without short circuit between assembled terminals in one etching process. In the process of forming a contact hole 112 for connecting the picture element electrode 113 and the drain electrode 108 on the interlayer insulating film 111 and on the passivation film 110, a dry etching condition is established so that after the ashing process using O2 gas to remove residue on the bottom of the contact hole 112, an etching process using fluorine gas +O2 gas etc. is performed to reduce irregularity on the surface of the interlayer insulating film 111.
摘要翻译：提供了一种液晶显示器的制造方法。具有形成在结构的最上层的像素电极的液晶显示器能够通过层间绝缘膜降低像素电极和漏电极之间的连接电阻。在形成像素电极时，可以在一个蚀刻工艺中将ITO膜图案化成期望的图案，而不会在组装端子之间发生短路。在形成用于连接层间绝缘膜111和钝化膜110上的像素电极113和漏电极108的接触孔112的过程中，建立干蚀刻条件，使得在使用O 2气体去除接触孔112的底部残留物，进行使用氟气+ O 2气体等的蚀刻处理，以减少层间绝缘膜111的表面的凹凸。

5. 发明授权

US5999235A Liquid crystal displaying apparatus and method of manufacturing TFT array 失效
标题翻译：液晶显示装置及制造TFT阵列的方法
公开(公告)号：US5999235A
公开(公告)日：1999-12-07
申请号：US879617
申请日：1997-06-20
申请人： Tooru Takeguchi , Kouji Yabushita , Masami Hayashi
发明人： Tooru Takeguchi , Kouji Yabushita , Masami Hayashi
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/308 , H01L21/336 , H01L29/786
CPC分类号： G02F1/1362
摘要： A method of manufacturing TFT array substrate comprises forming a control electrode and a control electrode line on a transparent insulating substrate, forming an insulating film on the control electrode and the control electrode line, forming a semiconductor layer through the insulating film on the control electrode and the control electrode line, forming a transparent conductive film on the insulating film, forming a picture element electrode by etching the transparent conductive film with an etchant including concentrated hydrochloric acid mixed with concentrated sulfuric acid and having water as main component, and forming a pair of electrodes on the semiconductor layer.
摘要翻译：一种制造TFT阵列基板的方法包括在透明绝缘基板上形成控制电极和控制电极线，在控制电极和控制电极线上形成绝缘膜，通过控制电极上的绝缘膜形成半导体层，以及所述控制电极线在所述绝缘膜上形成透明导电膜，通过用包含与浓硫酸混合并以水为主要成分的浓盐酸的蚀刻剂蚀刻所述透明导电膜，形成像素电极，形成一对半导体层上的电极。

6. 发明授权

US06317174B1 TFT array substrate, liquid crystal display using TFT array substrate, and manufacturing method thereof 有权
标题翻译： TFT阵列基板，使用TFT阵列基板的液晶显示器及其制造方法
公开(公告)号：US06317174B1
公开(公告)日：2001-11-13
申请号：US09667492
申请日：2000-09-22
申请人： Shigeaki Noumi , Kouji Yabushita
发明人： Shigeaki Noumi , Kouji Yabushita
IPC分类号： G02F1136
CPC分类号： H01L27/1259 , G02F1/136227 , H01L27/1214 , H01L27/1244
摘要： A manufacturing method of a liquid crystal display is provided. The liquid crystal display having a picture element electrode formed on the uppermost layer of a structure is capable of reducing connection resistance between picture element electrode and drain electrode through interlayer insulating film. At the time of forming the picture element electrode, ITO film can be patterned into a desirable pattern without short circuit between assembled terminals in one etching process. In the process of forming a contact hole 112 for connecting the picture element electrode 113 and the drain electrode 108 on the interlayer insulating film 111 and on the passivation film 110, a dry etching condition is established so that after the ashing process using O2 gas to remove residue on the bottom of the contact hole 112, an etching process using fluorine gas+O2 gas etc. is performed to reduce irregularity on the surface of the interlayer insulating film 111.
摘要翻译：提供了一种液晶显示器的制造方法。具有形成在结构的最上层的像素电极的液晶显示器能够通过层间绝缘膜降低像素电极和漏电极之间的连接电阻。在形成像素电极时，可以在一个蚀刻工艺中将ITO膜图案化成期望的图案而不会在组装端子之间发生短路。在形成用于连接像素电极113和漏电极的接触孔112的过程中 108在层间绝缘膜111上以及钝化膜110上，建立干蚀刻条件，使得在使用O 2气体进行灰化处理以除去接触孔112的底部上的残留物之后，使用氟气+ O 2气体进行层间绝缘膜111的表面的不规则化。

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