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1. 发明授权

US07486103B2 Switching system capable of reducing noise of output signal 失效
标题翻译：能够降低输出信号噪声的开关系统
公开(公告)号：US07486103B2
公开(公告)日：2009-02-03
申请号：US11734423
申请日：2007-04-12
申请人： Shian-Sung Shiu , Chung-Che Yu , Kuo-Wei Peng
发明人： Shian-Sung Shiu , Chung-Che Yu , Kuo-Wei Peng
IPC分类号： H03K17/16
CPC分类号： H03K19/00361
摘要： A switching system capable of reducing the noise of the output signal is provided. The switching system includes a first switch and a second switch, wherein the first switch conducts a first signal according to a first control signal; the second switch conducts a second signal according to a second control signal. And the voltages of the first control signal and the second control signal are restricted within a voltage interval to reduce the noise produced during the switching of the switches.
摘要翻译：提供了能够降低输出信号的噪声的开关系统。开关系统包括第一开关和第二开关，其中第一开关根据第一控制信号传导第一信号; 第二开关根据第二控制信号传导第二信号。并且第一控制信号和第二控制信号的电压被限制在电压间隔内，以减少开关切换期间产生的噪声。

2. 发明申请

US20080111589A1 SYSTEM FOR ADJUSTING DRIVING CAPABILITY OF OUTPUT STAGE 审中-公开
标题翻译：调整输出级驱动能力的系统
公开(公告)号：US20080111589A1
公开(公告)日：2008-05-15
申请号：US11614939
申请日：2006-12-21
申请人： Shian-Sung Shiu , Kuo-Wei Peng
发明人： Shian-Sung Shiu , Kuo-Wei Peng
IPC分类号： H03K3/00
CPC分类号： H03F1/0277
摘要： A driving adjustment circuit that increases the driving capability of amplifier by adding a driving current directly to an output stage of the amplifier is provided. The driving adjustment circuit adjusts the driving capability according to an external load. Thus, the present invention not only solves the problem of insufficient driving capability of a digital-to-analog converter, but also effectively reduces unnecessary high power consumption and improves the stability of the system by adjusting the driving capability of the amplifier according to the external load.
摘要翻译：提供了一种驱动调节电路，其通过将驱动电流直接添加到放大器的输出级来增加放大器的驱动能力。驱动调整电路根据外部负载调整驱动能力。因此，本发明不仅解决了数模转换器的驱动能力不足的问题，而且通过根据外部设备调整放大器的驱动能力，有效地降低了不必要的高功耗，提高了系统的稳定性加载。

3. 发明授权

US07429945B2 Analog to digital converter 有权
标题翻译：模数转换器
公开(公告)号：US07429945B2
公开(公告)日：2008-09-30
申请号：US11622045
申请日：2007-01-11
申请人： Shian-Sung Shiu , Kuo-Wei Peng
发明人： Shian-Sung Shiu , Kuo-Wei Peng
IPC分类号： H03M1/14
CPC分类号： H03M1/1215 , H03M1/144 , H03M1/365
摘要： The invention relates to an analog-to-digital converter comprising a reference voltage generating circuit, two coarse/fine comparators and two encoders for encoding the comparison result of the two coarse/fine comparators. In the invention, the two coarse/fine comparators processes a coarse comparison procedure and a fine comparison procedure on an input voltage in different clock cycle, thus, a sampling voltage error caused by an error of sampling time decreases. In another aspect of the invention, the capacitance of the input capacitor of the analog-to-digital converter decreases because the comparators for coarse comparison and fine comparison are the same, thus, a large power amplifier is not required for driving the input capacitor.
摘要翻译：本发明涉及一种模数转换器，包括参考电压发生电路，两个粗/精比较器和两个编码器，用于对两个粗/比较器的比较结果进行编码。在本发明中，两个粗/精比较器在不同的时钟周期内对输入电压进行粗略的比较程序和精细的比较程序，因此由采样时间的误差引起的采样电压误差降低。在本发明的另一方面，由于用于粗略比较和精细比较的比较器相同，因此模数转换器的输入电容器的电容减小，因此驱动输入电容器不需要大功率放大器。

4. 发明申请

US20070252742A1 ANALOG TO DIGITAL CONVERTER 有权
标题翻译：模拟到数字转换器
公开(公告)号：US20070252742A1
公开(公告)日：2007-11-01
申请号：US11622045
申请日：2007-01-11
申请人： Shian-Sung Shiu , Kuo-Wei Peng
发明人： Shian-Sung Shiu , Kuo-Wei Peng
IPC分类号： H03M1/12
CPC分类号： H03M1/1215 , H03M1/144 , H03M1/365
摘要： The invention relates to an analog-to-digital converter comprising a reference voltage generating circuit, two coarse/fine comparators and two encoders for encoding the comparison result of the two coarse/fine comparators. In the invention, the two coarse/fine comparators processes a coarse comparison procedure and a fine comparison procedure on an input voltage in different clock cycle, thus, a sampling voltage error caused by an error of sampling time decreases. In another aspect of the invention, the capacitance of the input capacitor of the analog-to-digital converter decreases because the comparators for coarse comparison and fine comparison are the same, thus, a large power amplifier is not required for driving the input capacitor.
摘要翻译：本发明涉及一种模数转换器，包括参考电压发生电路，两个粗/精比较器和两个编码器，用于对两个粗/比较器的比较结果进行编码。在本发明中，两个粗/精比较器在不同的时钟周期内对输入电压进行粗略的比较程序和精细的比较程序，因此由采样时间的误差引起的采样电压误差降低。在本发明的另一方面，由于用于粗略比较和精细比较的比较器相同，因此模数转换器的输入电容器的电容减小，因此驱动输入电容器不需要大功率放大器。

5. 发明授权

US07439894B2 Electronic apparatus for current source array and layout method thereof 有权
标题翻译：电流源阵列电子设备及其布局方法
公开(公告)号：US07439894B2
公开(公告)日：2008-10-21
申请号：US11559905
申请日：2006-11-15
申请人： Kuo-Wei Peng , Shian-Sung Shiu
发明人： Kuo-Wei Peng , Shian-Sung Shiu
IPC分类号： H03M1/66
CPC分类号： H03M1/0648 , H03M1/0678 , H03M1/682 , H03M1/747
摘要： An electronic apparatus for current source array and the layout method thereof are provided. The current source array includes a low bit group and a plurality of high bit groups. The low bit group has a plurality of current source units and is disposed at a central block of a layout area. In addition, each of the high bit groups has a plurality of current source units respectively disposed at a plurality of peripheral blocks of the layout area.
摘要翻译：本发明提供一种电流源阵列用电子装置及其布置方法。电流源阵列包括低位组和多个高位组。低位组具有多个电流源单元，并且布置在布局区域的中央块处。此外，每个高位组具有分别设置在布局区域的多个外围块处的多个电流源单元。

6. 发明申请

US20080018512A1 ELECTRONIC APPARATUS FOR CURRENT SOURCE ARRAY AND LAYOUT METHOD THEREOF 有权
标题翻译：用于电流源阵列的电子设备及其布局方法
公开(公告)号：US20080018512A1
公开(公告)日：2008-01-24
申请号：US11559905
申请日：2006-11-15
申请人： Kuo-Wei Peng , Shian-Sung Shiu
发明人： Kuo-Wei Peng , Shian-Sung Shiu
IPC分类号： H03M1/66
CPC分类号： H03M1/0648 , H03M1/0678 , H03M1/682 , H03M1/747
摘要： An electronic apparatus for current source array and the layout method thereof are provided. The current source array includes a low bit group and a plurality of high bit groups. The low bit group has a plurality of current source units and is disposed at a central block of a layout area. In addition, each of the high bit groups has a plurality of current source units respectively disposed at a plurality of peripheral blocks of the layout area.
摘要翻译：本发明提供一种电流源阵列用电子装置及其布置方法。电流源阵列包括低位组和多个高位组。低位组具有多个电流源单元，并且布置在布局区域的中央块处。此外，每个高位组具有分别设置在布局区域的多个外围块处的多个电流源单元。

7. 发明授权

US08487377B2 MOSFET layout and structure with common source 有权
标题翻译： MOSFET布局和结构具有共同的来源
公开(公告)号：US08487377B2
公开(公告)日：2013-07-16
申请号：US13092992
申请日：2011-04-25
申请人： Chung-Che Yu , Kuo-Wei Peng , Li-Min Lee
发明人： Chung-Che Yu , Kuo-Wei Peng , Li-Min Lee
IPC分类号： H01L27/02
CPC分类号： H01L29/7816 , H01L27/0266 , H01L29/0696 , H01L29/4238 , H01L29/7802
摘要： A MOSFET layout is disclosed. The MOSFET comprises a drain region, a gate region, a source region and a body region. The gate region is disposed outside the drain region and adjacent to the drain region. The source region has a plurality of source sections, which are disposed outside of the gate region and adjacent to the gate region. Each of two adjacent source sections has a source blank zone there between. The body region has at least two body portions, which are disposed at the source blank zones and adjacent to the gate region.
摘要翻译：公开了MOSFET布局。 MOSFET包括漏极区域，栅极区域，源极区域和体区域。栅极区域设置在漏极区域的外侧并与漏极区域相邻。源极区域具有多个源极区域，其设置在栅极区域的外部并且与栅极区域相邻。两个相邻源段中的每一个在其间具有源空白区。身体区域具有至少两个主体部分，其被设置在源空白区域并且邻近门区域。

8. 发明授权

US08138557B2 Layout structure of MOSFET and layout method thereof 有权
标题翻译： MOSFET的布局结构及其布局方法
公开(公告)号：US08138557B2
公开(公告)日：2012-03-20
申请号：US12616142
申请日：2009-11-11
申请人： Kuo-Wei Peng , Zhong-Wei Liu , Qian-Hua Zhou
发明人： Kuo-Wei Peng , Zhong-Wei Liu , Qian-Hua Zhou
IPC分类号： H01L29/41
CPC分类号： G06F17/5068 , H01L29/0696 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： A layout structure of a MOSFET is provided. The layout structure of the MOSFET includes a plurality of MOSFET cells, a first source/drain metal bus structure and a second source/drain metal bus structure. The first source/drain metal bus structure is electrically connected to first sources/drains of the MOSFET cells, and a width thereof is gradually decreased in a predetermined direction. The second source/drain metal bus structure is electrically connected to second sources/drains of the MOSFET cells, and a width thereof is gradually increased in the predetermined direction.
摘要翻译：提供了MOSFET的布局结构。 MOSFET的布局结构包括多个MOSFET单元，第一源极/漏极金属总线结构和第二源/漏极金属总线结构。第一源极/漏极金属总线结构电连接到MOSFET单元的第一源极/漏极，并且其宽度在预定方向上逐渐减小。第二源极/漏极金属总线结构电连接到MOSFET单元的第二源极/漏极，并且其宽度在预定方向上逐渐增加。

9. 发明申请

US20110113397A1 LAYOUT STRUCTURE OF MOSFET AND LAYOUT METHOD THEREOF 有权
标题翻译： MOSFET的布局结构及其布局方法
公开(公告)号：US20110113397A1
公开(公告)日：2011-05-12
申请号：US12616142
申请日：2009-11-11
申请人： Kuo-Wei Peng , Zhong-Wei Liu , Qian-Hua Zhou
发明人： Kuo-Wei Peng , Zhong-Wei Liu , Qian-Hua Zhou
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , H01L29/0696 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： A layout structure of a MOSFET is provided. The layout structure of the MOSFET includes a plurality of MOSFET cells, a first source/drain metal bus structure and a second source/drain metal bus structure. The first source/drain metal bus structure is electrically connected to first sources/drains of the MOSFET cells, and a width thereof is gradually decreased in a predetermined direction. The second source/drain metal bus structure is electrically connected to second sources/drains of the MOSFET cells, and a width thereof is gradually increased in the predetermined direction.
摘要翻译：提供了MOSFET的布局结构。 MOSFET的布局结构包括多个MOSFET单元，第一源极/漏极金属总线结构和第二源/漏极金属总线结构。第一源极/漏极金属总线结构电连接到MOSFET单元的第一源极/漏极，并且其宽度在预定方向上逐渐减小。第二源极/漏极金属总线结构电连接到MOSFET单元的第二源极/漏极，并且其宽度在预定方向上逐渐增加。

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