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1. 发明申请

US20070090360A1 Blanket implant diode 审中-公开
标题翻译：毯式植入二极管
公开(公告)号：US20070090360A1
公开(公告)日：2007-04-26
申请号：US11415522
申请日：2006-05-02
申请人： Sheng-Huei Dai , Ya-Chin King , Chun-Jen Huang , L.C. Kao
发明人： Sheng-Huei Dai , Ya-Chin King , Chun-Jen Huang , L.C. Kao
IPC分类号： H01L29/04 , H01L21/00 , H01L29/15 , H01L29/10 , H01L31/00 , H01L31/036
CPC分类号： H01L29/8611 , H01L29/66136
摘要： Blanket implant diode which can be used for transient voltage suppression having a P+ substrate implanted with an N-type dopant blanket implant near a top surface of the substrate, creating a P− region. An oxide mask is layered adjacent to and above the P− region. The oxide mask is partially etched away from a portion of the P− region, creating an etched region. An N-type main function implant is implanted into the etched region, creating an N+ region above the P+ substrate and adjacent the P− region. And, a metal is layered above the oxide mask in the etched region to form an electrode. Terminations may be attached electrically to both sides of the P-N junction. Methods of making and using the present invention and methods for transient voltage suppression are also provided.
摘要翻译：可以用于瞬态电压抑制的毯式注入二极管，其具有在衬底的顶表面附近注入N型掺杂剂覆盖层注入的P +衬底，形成P-区。在P区附近层叠氧化物掩模。氧化物掩模被部分地蚀刻离开P-区域的一部分，产生蚀刻区域。将N型主要功能植入物注入到蚀刻区域中，在P +衬底上方形成N +区域并邻近P-区域。并且，在蚀刻区域中的氧化物掩模上方形成金属以形成电极。端子可以电连接到P-N结的两侧。还提供了制造和使用本发明的方法和用于瞬态电压抑制的方法。

2. 发明申请

US20130285737A1 Charge Pump System 有权
标题翻译：电荷泵系统
公开(公告)号：US20130285737A1
公开(公告)日：2013-10-31
申请号：US13460112
申请日：2012-04-30
申请人： Yung Feng Lin , Chun-Jen Huang , Tzeng-Huei Shiau , Chun-Hsiung Hung , Caiyun Wu , Qifang Wang
发明人： Yung Feng Lin , Chun-Jen Huang , Tzeng-Huei Shiau , Chun-Hsiung Hung , Caiyun Wu , Qifang Wang
IPC分类号： G05F3/02
CPC分类号： H02M3/07
摘要： In one aspect, a first charge pump has serially arranged charge pump stages. Inter-stage nodes between adjacent stages are pumped by a second charge pump. In another aspect, timing of the charge pump stages is controlled by at a command clock signal. The command clock signal and command data are communicated between a integrated circuit with the charge pump and an external circuit.
摘要翻译：在一个方面，第一电荷泵具有串联布置的电荷泵级。相邻级之间的阶段节点由第二电荷泵泵送。在另一方面，电荷泵级的定时由命令时钟信号控制。命令时钟信号和命令数据在与电荷泵的集成电路和外部电路之间传送。

3. 发明申请

US20080171433A1 DAMASCENE INTERCONNECTION STRUCTURE AND DUAL DAMASCENE PROCESS THEREOF 有权
标题翻译：大连互连结构及其双重破坏过程
公开(公告)号：US20080171433A1
公开(公告)日：2008-07-17
申请号：US11621996
申请日：2007-01-11
申请人： Chun-Jen Huang , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
发明人： Chun-Jen Huang , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
IPC分类号： H01L21/768
CPC分类号： H01L21/76811
摘要： A dual damascene process is disclosed. A substrate having a base dielectric layer, a lower wiring layer inlaid in the base dielectric layer, and a cap layer capping the lower wiring layer is provided. A dielectric layer is deposited on the cap layer. A silicon oxide layer is deposited on the dielectric layer. A metal hard mask is formed on the silicon oxide layer. A trench opening is etched into the metal hard mask. A partial via feature is etched into the dielectric layer within the trench opening. The trench opening and the partial via feature are etch transferred into the dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the cap layer. A liner removal step is performed to selectively remove the exposed cap layer from the dual damascene opening by employing CF4/NF3 plasma.
摘要翻译：公开了一种双镶嵌工艺。提供了具有基底电介质层，嵌入基底电介质层中的下部布线层和覆盖下部布线层的盖层的基板。介电层沉积在盖层上。氧化硅层沉积在电介质层上。在氧化硅层上形成金属硬掩模。将沟槽开口蚀刻到金属硬掩模中。部分通孔特征被蚀刻到沟槽开口内的电介质层中。沟槽开口和部分通孔特征被蚀刻转移到电介质层中，从而形成暴露盖层的一部分的双镶嵌开口。执行衬垫去除步骤以通过使用CF 4 N 3 N 3等离子体从双镶嵌开口选择性地去除暴露的盖层。

4. 发明授权

US07378343B2 Dual damascence process utilizing teos-based silicon oxide cap layer having reduced carbon content 有权
标题翻译：使用具有降低的碳含量的基于硅氧烷的氧化硅盖层的双重马氏体过程
公开(公告)号：US07378343B2
公开(公告)日：2008-05-27
申请号：US11164285
申请日：2005-11-17
申请人： Jei-Ming Chen , Miao-Chun Lin , Kuo-Chih Lai , Mei-Ling Chen , Cheng-Ming Weng , Chun-Jen Huang , Yu-Tsung Lai
发明人： Jei-Ming Chen , Miao-Chun Lin , Kuo-Chih Lai , Mei-Ling Chen , Cheng-Ming Weng , Chun-Jen Huang , Yu-Tsung Lai
IPC分类号： H01L21/4763
CPC分类号： H01L21/7681 , H01L21/76829
摘要： A dual damascene process starts with providing a substrate having thereon a base layer, a lower copper wiring inlaid into the base layer, and a lower cap layer covering the inlaid lower copper wiring. A dielectric layer is deposited on the lower cap layer. A TEOS-based oxide cap layer is deposited on the dielectric layer. The TEOS-based oxide cap layer has a carbon content lower than 1×1019 atoms/cm3. A metal hard mask is deposited on the TEOS-based oxide cap layer. A trench recess is etched into the metal hard mask and the TEOS-based oxide cap layer. A partial via feature is then etched into the TEOS-based oxide cap layer and the dielectric layer through the trench recess. The trench recess and partial via feature are etch transferred into the underlying dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the lower copper wiring.
摘要翻译：双镶嵌工艺首先提供一种其上具有基底层的基底，嵌入底层的下部铜布线和覆盖嵌入的下部铜布线的下部盖层。介电层沉积在下盖层上。在电介质层上沉积TEOS基氧化物覆盖层。 TEOS基氧化物覆盖层的碳含量低于1×10 19原子/ cm 3。金属硬掩模沉积在TEOS基氧化物覆盖层上。将沟槽凹槽蚀刻到金属硬掩模和TEOS基氧化物盖层中。然后将部分通孔特征通过沟槽凹槽蚀刻到TEOS基氧化物覆盖层和电介质层中。沟槽凹槽和部分通孔特征被蚀刻转移到下面的电介质层中，从而形成一个双镶嵌开口，暴露下部铜布线的一部分。

5. 发明申请

US20070210454A1 Structure of Metal Interconnect and Fabrication Method Thereof 有权
标题翻译：金属互连结构及其制作方法
公开(公告)号：US20070210454A1
公开(公告)日：2007-09-13
申请号：US11748472
申请日：2007-05-14
申请人： Pei-Yu Chou , Chun-Jen Huang
发明人： Pei-Yu Chou , Chun-Jen Huang
IPC分类号： H01L23/52
CPC分类号： H01L21/76844 , H01L21/76802 , H01L21/76814 , H01L21/76829
摘要： A process and structure for a metal interconnect comprises providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first patterned hard mask to form a first opening and a second electric conductor, forming a second dielectric layer and a second patterned hard mask, using the second patterned hard mask as an etching mask and using a first patterned hard mask as an etch stop layer to form a second opening and a third electric conductor.
摘要翻译：用于金属互连的工艺和结构包括：使用第一图案化硬掩模提供具有第一电导体，形成第一介电层和第一图案化硬掩模的基板，以形成第一开口和第二导电体，形成第二导体电介质层和第二图案化硬掩模，使用第二图案化硬掩模作为蚀刻掩模，并使用第一图案化硬掩模作为蚀刻停止层以形成第二开口和第三导电体。

6. 发明申请

US20070125750A1 METHOD FOR REMOVING POST-ETCH RESIDUE FROM WAFER SURFACE 审中-公开
标题翻译：从表面去除蚀刻后残留物的方法
公开(公告)号：US20070125750A1
公开(公告)日：2007-06-07
申请号：US11674678
申请日：2007-02-14
申请人： Cheng-Ming Weng , Miao-Chun Lin , Chun-Jen Huang
发明人： Cheng-Ming Weng , Miao-Chun Lin , Chun-Jen Huang
IPC分类号： C23F1/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/76811 , H01L21/76814 , Y10S438/906 , Y10S438/963
摘要： A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resist pattern is stripped off. A through hole is plasma etched into the low-k dielectric film by using the metal pattern as a hard mask. The plasma etching causes residues to deposit within the through hole. A wet treatment is then performed to soften the residues. A plasma dry treatment is carried out to crack the residues.
摘要翻译：低k绝缘膜沉积在晶片上。然后在低k电介质膜上沉积金属层。在金属层上形成抗蚀剂图案。然后将抗蚀剂图案转移到下面的金属层以形成金属图案。剥离抗蚀剂图案。通过使用金属图案作为硬掩模将通孔等离子体蚀刻到低k电介质膜中。等离子体蚀刻导致残留物沉积在通孔内。然后进行湿处理以软化残留物。进行等离子体干燥处理以破坏残留物。

7. 发明申请

US20070111514A1 DUAL DAMASCENE PROCESS UTILIZING TEOS-BASED SILICON OXIDE CAP LAYER HAVING REDUCED CARBON CONTENT 有权
标题翻译：使用具有减少碳含量的基于TEOS的氧化硅膜层的双重增塑工艺
公开(公告)号：US20070111514A1
公开(公告)日：2007-05-17
申请号：US11164285
申请日：2005-11-17
申请人： Jei-Ming Chen , Miao-Chun Lin , Kuo-Chih Lai , Mei-Ling Chen , Cheng-Ming Weng , Chun-Jen Huang , Yu-Tsung Lai
发明人： Jei-Ming Chen , Miao-Chun Lin , Kuo-Chih Lai , Mei-Ling Chen , Cheng-Ming Weng , Chun-Jen Huang , Yu-Tsung Lai
IPC分类号： H01L21/473
CPC分类号： H01L21/7681 , H01L21/76829
摘要： A dual damascene process starts with providing a substrate having thereon a base layer, a lower copper wiring inlaid into the base layer, and a lower cap layer covering the inlaid lower copper wiring. A dielectric layer is deposited on the lower cap layer. A TEOS-based oxide cap layer is deposited on the dielectric layer. The TEOS-based oxide cap layer has a carbon content lower than 1×1019 atoms/cm3. A metal hard mask is deposited on the TEOS-based oxide cap layer. A trench recess is etched into the metal hard mask and the TEOS-based oxide cap layer. A partial via feature is then etched into the TEOS-based oxide cap layer and the dielectric layer through the trench recess. The trench recess and partial via feature are etch transferred into the underlying dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the lower copper wiring.
摘要翻译：双镶嵌工艺首先提供一种其上具有基底层的基底，嵌入底层的下部铜布线和覆盖嵌入的下部铜布线的下部盖层。介电层沉积在下盖层上。在电介质层上沉积TEOS基氧化物覆盖层。 TEOS基氧化物覆盖层的碳含量低于1×10 19原子/ cm 3。金属硬掩模沉积在TEOS基氧化物覆盖层上。将沟槽凹槽蚀刻到金属硬掩模和TEOS基氧化物盖层中。然后将部分通孔特征通过沟槽凹槽蚀刻到TEOS基氧化物覆盖层和电介质层中。沟槽凹槽和部分通孔特征被蚀刻转移到下面的电介质层中，从而形成一个双镶嵌开口，暴露下部铜布线的一部分。

8. 发明授权

US08080877B2 Damascene interconnection structure and dual damascene process thereof 有权
标题翻译：大马士革互连结构及其双镶嵌工艺
公开(公告)号：US08080877B2
公开(公告)日：2011-12-20
申请号：US12821136
申请日：2010-06-23
申请人： Chun-Jen Huang , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
发明人： Chun-Jen Huang , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76811
摘要： A dual damascene process is disclosed. A substrate having a base dielectric layer, a lower wiring layer inlaid in the base dielectric layer, and a cap layer capping the lower wiring layer is provided. A dielectric layer is deposited on the cap layer. A silicon oxide layer is deposited on the dielectric layer. A metal hard mask is formed on the silicon oxide layer. A trench opening is etched into the metal hard mask. A partial via feature is etched into the dielectric layer within the trench opening. The trench opening and the partial via feature are etch transferred into the dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the cap layer. A liner removal step is performed to selectively remove the exposed cap layer from the dual damascene opening by employing CF4/NF3 plasma.
摘要翻译：公开了一种双镶嵌工艺。提供了具有基底电介质层，嵌入基底电介质层中的下部布线层和覆盖下部布线层的盖层的基板。介电层沉积在盖层上。氧化硅层沉积在电介质层上。在氧化硅层上形成金属硬掩模。将沟槽开口蚀刻到金属硬掩模中。部分通孔特征被蚀刻到沟槽开口内的电介质层中。沟槽开口和部分通孔特征被蚀刻转移到电介质层中，从而形成暴露盖层的一部分的双镶嵌开口。执行衬垫去除步骤以通过使用CF4 / NF3等离子体从双镶嵌开口选择性地去除暴露的盖层。

9. 发明申请

US20110248747A1 ZERO-TEMPERATURE-COEFFICIENT VOLTAGE OR CURRENT GENERATOR 有权
标题翻译：零点温度系数电压或电流发生器
公开(公告)号：US20110248747A1
公开(公告)日：2011-10-13
申请号：US13081472
申请日：2011-04-06
申请人： Chun-Jen Huang
发明人： Chun-Jen Huang
IPC分类号： H02M1/00
CPC分类号： G05F3/30
摘要： General speaking, a resistor of high resistivity has a negative-temperature-coefficient and a resistor of low resistivity has a positive-temperature-coefficient. Utilizing this characteristic, an appropriate proportion between the above resistors can be found to make a combined resistor with an approximate zero-temperature-coefficient. The combined resistor can be used to design a circuit for generating voltage and current with approximate zero-temperature-coefficients.
摘要翻译：一般来说，高电阻率的电阻器具有负温度系数，低电阻率的电阻器具有正温度系数。利用该特性，可以发现上述电阻器之间的适当比例使得具有近似零温度系数的组合电阻器。组合电阻器可用于设计用于产生具有近似零温度系数的电压和电流的电路。

10. 发明申请

US20100258941A1 DAMASCENE INTERCONNECTION STRUCTURE AND DUAL DAMASCENE PROCESS THEREOF 有权
标题翻译：大连互连结构及其双重破坏过程
公开(公告)号：US20100258941A1
公开(公告)日：2010-10-14
申请号：US12821136
申请日：2010-06-23
申请人： Chun-Jen Huang , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
发明人： Chun-Jen Huang , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
IPC分类号： H01L23/532
CPC分类号： H01L21/76811
摘要： A dual damascene process is disclosed. A substrate having a base dielectric layer, a lower wiring layer inlaid in the base dielectric layer, and a cap layer capping the lower wiring layer is provided. A dielectric layer is deposited on the cap layer. A silicon oxide layer is deposited on the dielectric layer. A metal hard mask is formed on the silicon oxide layer. A trench opening is etched into the metal hard mask. A partial via feature is etched into the dielectric layer within the trench opening. The trench opening and the partial via feature are etch transferred into the dielectric layer, thereby forming a dual damascene opening, which exposes a portion of the cap layer. A liner removal step is performed to selectively remove the exposed cap layer from the dual damascene opening by employing CF4/NF3 plasma.
摘要翻译：公开了一种双镶嵌工艺。提供了具有基底电介质层，嵌入基底电介质层中的下部布线层和覆盖下部布线层的盖层的基板。介电层沉积在盖层上。氧化硅层沉积在电介质层上。在氧化硅层上形成金属硬掩模。将沟槽开口蚀刻到金属硬掩模中。部分通孔特征被蚀刻到沟槽开口内的电介质层中。沟槽开口和部分通孔特征被蚀刻转移到电介质层中，从而形成暴露盖层的一部分的双镶嵌开口。执行衬垫去除步骤以通过使用CF4 / NF3等离子体从双镶嵌开口选择性地去除暴露的盖层。

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