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1. 发明授权

US06407421B1 DRAM having a guard ring and process of fabricating the same 有权
标题翻译：具有保护环的DRAM及其制造方法
公开(公告)号：US06407421B1
公开(公告)日：2002-06-18
申请号：US09658685
申请日：2000-09-08
申请人： Sheng M. Liu , Tzu-Ching Tsai
发明人： Sheng M. Liu , Tzu-Ching Tsai
IPC分类号： H01L27108
CPC分类号： H01L27/10894 , H01L27/1087 , H01L29/945
摘要： A DRAM having a guard ring comprises a semiconductor substrate having a memory array area and a guard ring area; a first trench disposed on said memory array area; a second trench disposed on said guard ring area; a first doped strap disposed on the upper surface of said semiconductor substrate around said first trench; a second doped strap disposed on the upper surface of said semiconductor substrate around said second trench. Furthermore, the DRAM comprises a first doped plate disposed on said semiconductor substrate around the bottom of said first trench, and is separated from said first doped strap by a predetermined distance; and a second doped plate disposed on said semiconductor substrate around the bottom of said second trench, and is connected to said second doped strap.
摘要翻译：具有保护环的DRAM包括具有存储器阵列区域和保护环区域的半导体衬底; 设置在所述存储器阵列区域上的第一沟槽; 设置在所述保护环区域上的第二沟槽; 第一掺杂带，设置在所述半导体衬底的围绕所述第一沟槽的上表面上; 第二掺杂带，设置在所述半导体衬底的围绕所述第二沟槽的上表面上。此外，DRAM包括设置在所述半导体衬底周围所述第一沟槽的底部的第一掺杂板，并且与所述第一掺杂带隔开预定距离; 以及第二掺杂板，设置在所述第二沟槽的底部周围的所述半导体衬底上，并且连接到所述第二掺杂带。

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