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1. 发明授权

US06759337B1 Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate 有权
标题翻译：使用氮等离子体和等离子体在半导体衬底上的集成电路结构上蚀刻可控厚度的氧化物和施加到衬底的rf偏压的工艺
公开(公告)号：US06759337B1
公开(公告)日：2004-07-06
申请号：US09464297
申请日：1999-12-15
申请人： Sheldon Aronowitz , Valeriy Sukharev , John Haywood , James P. Kimball , Helmut Puchner , Ravindra Manohar Kapre , Nicholas Eib
发明人： Sheldon Aronowitz , Valeriy Sukharev , John Haywood , James P. Kimball , Helmut Puchner , Ravindra Manohar Kapre , Nicholas Eib
IPC分类号： H01L21302
CPC分类号： H01L21/31105 , H01L21/28176
摘要： A process for etching oxide is disclosed wherein a reproducibly accurate and uniform amount of silicon oxide can be removed from a surface of an oxide previously formed over a semiconductor substrate by exposing the oxide to a nitrogen plasma in an etch chamber while applying an rf bias to a substrate support on which the substrate is supported in the etch chamber. The thickness of the oxide removed in a given period of time may be changed by changing the amount of rf bias applied to the substrate through the substrate support.
摘要翻译：公开了一种用于蚀刻氧化物的方法，其中可以通过在蚀刻室中暴露氧化物到氮等离子体，同时将rf偏压施加到半导体衬底上，通过在半导体衬底上预先形成的氧化物的表面，可再现性地精确和均匀的量的氧化硅衬底支撑件，衬底支撑在蚀刻室中。在给定时间段内去除的氧化物的厚度可以通过改变通过衬底支撑件施加到衬底的rf偏置量来改变。

2. 发明授权

US06413881B1 PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NITRIDATION OF UPPER SURFACE OF GATE OF OXIDE TO FORM BARRIER OF NITROGEN ATOMS IN UPPER SURFACE REGION OF GATE OXIDE, AND RESULTING PRODUCT 有权
标题翻译：通过将氧化物的上层表面氧化成形成氮氧化物的上部表面区域的氮化物的氮化物和结果产物来形成具有增强的可靠性的方法
公开(公告)号：US06413881B1
公开(公告)日：2002-07-02
申请号：US09521312
申请日：2000-03-09
申请人： Sheldon Aronowitz , John Haywood , James P. Kimball , Helmut Puchner , Ravindra Manohar Kapre , Nicholas Eib
发明人： Sheldon Aronowitz , John Haywood , James P. Kimball , Helmut Puchner , Ravindra Manohar Kapre , Nicholas Eib
IPC分类号： H01L2131
CPC分类号： H01L21/28176 , H01L21/28202 , H01L21/28211 , H01L21/2822 , H01L21/3144 , H01L29/518
摘要： A process for inhibiting the passage of dopant from a gate electrode into a thin gate oxide comprises nitridation of the upper surface of the thin gate oxide, prior to formation of the gate electrode over the gate oxide, to thereby form a barrier of nitrogen atoms in the upper surface region of the gate oxide adjacent the interface between the gate oxide and the gate electrode to inhibit passage of dopant atoms from the gate electrode into the thin gate oxide during annealing of the structure. In one embodiment, a selective portion of silicon oxide on a silicon substrate may be etched to thin the oxide to the desired thickness using a nitrogen plasma with a bias applied to the silicon substrate. Nitridation of the surface of the etched silicon oxide is then carried out in the same apparatus by removing the bias from the silicon substrate.
摘要翻译：抑制掺杂剂从栅电极通入薄栅氧化物的方法包括在栅极氧化物上形成栅电极之前，对薄栅极氧化物的上表面进行氮化，从而形成氮原子的势垒栅极氧化物的上表面区域与栅极氧化物和栅电极之间的界面相邻，以在结构退火期间抑制掺杂剂原子从栅电极到薄栅氧化层的通过。在一个实施例中，可以蚀刻硅衬底上的氧化硅的选择性部分，以使用施加到硅衬底的偏压的氮等离子体将氧化物稀释至期望的厚度。然后通过从硅衬底去除偏压，在相同的装置中进行蚀刻的氧化硅的表面的氮化。

3. 发明授权

US5756369A Rapid thermal processing using a narrowband infrared source and feedback 失效
标题翻译：快速热处理采用窄带红外源和反馈
公开(公告)号：US5756369A
公开(公告)日：1998-05-26
申请号：US678718
申请日：1996-07-11
申请人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
发明人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
IPC分类号： H01L21/20 , H01L21/00 , H01L21/268 , H01L21/285 , H01L21/316 , H01L21/324 , H01L21/66 , H01L23/34 , G01R31/26
CPC分类号： B24B37/013 , H01L21/02238 , H01L21/02255 , H01L21/28518 , H01L21/31662 , H01L21/324 , H01L21/67115 , H01L22/26 , H01L23/34 , H01L2924/0002 , Y10S148/093 , Y10S148/094 , Y10S148/095
摘要： Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
摘要翻译：通过扫描与晶片表面接触的二氧化硅膜的激光束来进行半导体晶片的快速热处理。二氧化硅膜吸收激光束的能量并将能量转换成热量。热又转移到晶片上。可以获得温度反馈以增加跨晶片温度的控制和均匀性。

4. 发明授权

US5897381A Method of forming a layer and semiconductor substrate 失效
标题翻译：形成层和半导体衬底的方法
公开(公告)号：US5897381A
公开(公告)日：1999-04-27
申请号：US955384
申请日：1997-10-21
申请人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
发明人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
IPC分类号： H01L21/20 , H01L21/00 , H01L21/268 , H01L21/285 , H01L21/316 , H01L21/324 , H01L21/66 , H01L23/34 , H01L21/26 , H01L21/42 , H01L21/477
CPC分类号： B24B37/013 , H01L21/02238 , H01L21/02255 , H01L21/28518 , H01L21/31662 , H01L21/324 , H01L21/67115 , H01L22/26 , H01L23/34 , H01L2924/0002 , Y10S148/093 , Y10S148/094 , Y10S148/095
摘要： Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
摘要翻译：通过扫描与晶片表面接触的二氧化硅膜的激光束来进行半导体晶片的快速热处理。二氧化硅膜吸收激光束的能量并将能量转换成热量。热又转移到晶片上。可以获得温度反馈以增加跨晶片温度的控制和均匀性。

5. 发明授权

US5893952A Apparatus for rapid thermal processing of a wafer 失效
标题翻译：用于晶片快速热处理的装置
公开(公告)号：US5893952A
公开(公告)日：1999-04-13
申请号：US954791
申请日：1997-10-21
申请人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
发明人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
IPC分类号： H01L21/20 , H01L21/00 , H01L21/268 , H01L21/285 , H01L21/316 , H01L21/324 , H01L21/66 , H01L23/34 , C23C16/00
CPC分类号： B24B37/013 , H01L21/02238 , H01L21/02255 , H01L21/28518 , H01L21/31662 , H01L21/324 , H01L21/67115 , H01L22/26 , H01L23/34 , H01L2924/0002 , Y10S148/093 , Y10S148/094 , Y10S148/095
摘要： Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
摘要翻译：通过扫描与晶片表面接触的二氧化硅膜的激光束来进行半导体晶片的快速热处理。二氧化硅膜吸收激光束的能量并将能量转换成热量。热又转移到晶片上。可以获得温度反馈以增加跨晶片温度的控制和均匀性。

6. 发明授权

US07313508B2 Process window compliant corrections of design layout 有权
标题翻译：过程窗口符合设计布局校正
公开(公告)号：US07313508B2
公开(公告)日：2007-12-25
申请号：US10330929
申请日：2002-12-27
申请人： Ebo Croffie , Colin Yates , Nicholas Eib , Christopher Neville , Mario Garza , Neal Callan
发明人： Ebo Croffie , Colin Yates , Nicholas Eib , Christopher Neville , Mario Garza , Neal Callan
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.
摘要翻译：本发明提供了一种执行设计布局的兼容过程窗口校正的方法。本发明包括一个操作员执行以下步骤：（1）使用提供的原始布局模式在最佳曝光条件下模拟发现检查临界尺寸（DI CD）; （2）使用提供的原始布局图案在预定边界曝光条件下模拟DI CD; （3）如果来自步骤（1）的DI CD符合目标DI CD定义，并且步骤（2）的DI CD符合过程窗口规范，则会发生收敛; （4）如果没有实现步骤（3）的任何部分，则修改布局图案并重复步骤（2）至（3），直到来自步骤（2）的DI CD达到规格极限。

7. 发明申请

US20050151949A1 Process and apparatus for applying apodization to maskless optical direct write lithography processes 审中-公开
标题翻译：用于将无切削光学直写式光刻工艺进行变迹的工艺和设备
公开(公告)号：US20050151949A1
公开(公告)日：2005-07-14
申请号：US10988087
申请日：2004-11-12
申请人： Nicholas Eib , Ebo Croffie , Christopher Neville , Neal Callan
发明人： Nicholas Eib , Ebo Croffie , Christopher Neville , Neal Callan
IPC分类号： G03F7/20 , G03B27/42 , G03B27/54
CPC分类号： G03F7/7025 , G03F7/70283 , G03F7/70291 , G03F7/70325
摘要： The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a blocker to block zero order light to improve image quality for phase shift lithography systems and methodologies. A maskless lithography system is provided. The lithography system provided uses a phase shift pattern generator which projects a phase shift image pattern along an optical path onto a photoimageable layer of a substrate in order to facilitate pattern transfer. A blocking element is interposed in the optical path to block zero order light in the image pattern, thereby improving image quality.
摘要翻译：本发明提供了用于完成相移光刻工艺的方法和装置，该方法和装置使用阻滞剂来阻挡零级光以改善相移光刻系统和方法的图像质量。提供无掩模光刻系统。提供的光刻系统使用相移图案发生器，其将沿着光路的相移图像图案投影到基板的可光成像层上，以便于图案转印。阻挡元件插入在光路中以阻挡图像图案中的零级光，从而提高图像质量。

8. 发明申请

US20060203220A1 Lithographic apparatus and device manufacturing method, an integrated circuit, a flat panel display, and a method of compensating for cupping 有权
公开(公告)号：US20060203220A1
公开(公告)日：2006-09-14
申请号：US11252877
申请日：2005-10-19
申请人： Kars Troost , Johannes Baselmans , Arno Bleeker , Louis Markoya , Neal Callan , Nicholas Eib
发明人： Kars Troost , Johannes Baselmans , Arno Bleeker , Louis Markoya , Neal Callan , Nicholas Eib
IPC分类号： G03B27/54
CPC分类号： G03F7/70291 , G03F7/70275 , G03F7/70358
摘要： The tilt and position of individually controllable element are simultaneously adjusted to allow a greater range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and tilt of the individually controllable elements can be achieved by two electrodes operable over a range of values.

9. 发明授权

US07634389B2 Reflectivity optimization for multilayer stacks 失效
标题翻译：多层堆叠的反射率优化
公开(公告)号：US07634389B2
公开(公告)日：2009-12-15
申请号：US10718824
申请日：2003-11-21
申请人： Lav Ivanovic , Nicholas Eib , Xudong Xu
发明人： Lav Ivanovic , Nicholas Eib , Xudong Xu
IPC分类号： G06F7/60 , H01L21/00 , H01L21/469 , G06F19/00
CPC分类号： G02B5/0833 , G02B27/0012
摘要： A method for obtaining an optimal reflectivity value for complex multilayer stacks is disclosed. Aspects of the present invention include generating a model of a multilayer stack and parameterizing each layer by a thickness and an index of refraction; allowing a user to input values for the parameters; calculating an extrema for a cost function of reflectivity R using the input parameter values; calculating sensitivity values S for the extrema points; and obtaining an optimal value by calculating a cost function R+S.
摘要翻译：公开了一种用于获得复杂多层堆叠的最佳反射率值的方法。本发明的方面包括生成多层堆叠的模型，并且通过厚度和折射率将每层参数化; 允许用户输入参数的值; 使用输入参数值计算反射率R的成本函数的极值; 计算极值点的灵敏度值S; 并通过计算成本函数R + S获得最优值。

10. 发明申请

US20050196681A1 OPC based illumination optimization with mask error constraints 有权
标题翻译：基于OPC的照明优化与掩模误差约束
公开(公告)号：US20050196681A1
公开(公告)日：2005-09-08
申请号：US10794683
申请日：2004-03-05
申请人： Ebo Croffle , Nicholas Eib , Mario Garza , Paul Filseth , Lav Ivanovic
发明人： Ebo Croffle , Nicholas Eib , Mario Garza , Paul Filseth , Lav Ivanovic
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/705
摘要： A method and system of optimizing the illumination of a mask in a photolithography process. A specific, preferred method includes the steps of: loading minimum design rules of a layout, loading exposure latitude constraints, loading mask error constraints, loading initial illumination conditions, simulating current illumination conditions, obtaining dose-to-print threshold from the minimum design rules (i.e., lines-and-space feature), applying OPC on the layout using the dose-to-print threshold, calculating DOF using the exposure latitude and mask error constraints, changing the illumination conditions in order to attempt to maximize common DOF with the exposure latitude and mask error constraints, and continuing the process until maximum common DOF is obtained.
摘要翻译：一种在光刻工艺中优化掩模照明的方法和系统。具体的，优选的方法包括以下步骤：加载布局的最小设计规则，加载曝光宽容约束，加载掩码误差约束，加载初始照明条件，模拟当前照明条件，从最小设计规则获得剂量到打印阈值（即线和空间特征），使用剂量到打印阈值在布局上应用OPC，使用曝光宽容度和掩模误差约束计算DOF，改变照明条件，以便尝试最大化常见DOF 曝光宽容度和掩模误差约束，并持续该过程，直到获得最大共同DOF。

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