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1. 发明授权

US06291307B1 Method and structure to make planar analog capacitor on the top of a STI structure 失效
标题翻译：在STI结构顶部制作平面模拟电容的方法和结构
公开(公告)号：US06291307B1
公开(公告)日：2001-09-18
申请号：US09368863
申请日：1999-08-06
申请人： Shao-Fu Sanford Chu , Yang Pan , Wang Yimin , Kai Shao
发明人： Shao-Fu Sanford Chu , Yang Pan , Wang Yimin , Kai Shao
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/76224 , H01L27/0629
摘要： A new method is provided to create a capacitor over the surface of STI regions. The STI regions are first created in the surface of the substrate, a layer of sacrificial oxide is next blanket deposited over the substrate (thereby including the surface of the created STI regions). A depletion stop region overlying densely spaced STI regions is formed in the surface of the substrate by N+ ion implantation, N-well and P-well regions are formed surrounding the depletion stop region. An insulation layer is deposited. The sacrificial oxide and insulation layers are patterned and etched leaving the sacrificial oxide and the insulation layer in place where the capacitor is to be created. A layer of gate oxide is formed over the surface of the substrate, a layer of poly 2 is deposited for the bottom plate and the gate electrode. The conductivity of the gate electrode and the bottom plate of the capacitor is established by performing a selective N+ implant into the layer of poly 2 where the gate electrode and the bottom plate of the capacitor are to be formed. A layer of dielectric is deposited for the capacitor dielectric, a layer of in-situ doped poly 3 is deposited for the top plate of the capacitor. The layers of poly 3, dielectric and poly 2 are etched forming the capacitor structure and the gate electrode structure.
摘要翻译：提供了一种新的方法来在STI区域的表面上形成电容器。首先在衬底的表面中形成STI区，然后在衬底上沉积一层牺牲氧化物（从而包括所产生的STI区的表面）。通过N +离子注入在衬底的表面中形成覆盖密集间隔的STI区的耗尽阻挡区，在耗尽阻挡区周围形成N阱和P阱区。沉积绝缘层。牺牲氧化物和绝缘层被图案化和蚀刻，留下牺牲氧化物和绝缘层到位于要产生电容器的位置。在衬底的表面上形成栅极氧化层，为了沉积底层和栅电极，淀积一层聚二氧化硅。通过对形成电容器的栅电极和底板的poly 2层进行选择性N +注入来建立电容器的栅电极和底板的导电性。为电容器电介质沉积一层电介质，为电容器的顶板沉积一层原位掺杂的poly 3。蚀刻形成电容器结构和栅极电极结构的聚3，电介质和聚合物2的层。

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