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1. 发明申请

US20120055612A1 ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES 审中-公开
标题翻译：镓和镓合金膜的电沉积方法和相关的光伏结构
公开(公告)号：US20120055612A1
公开(公告)日：2012-03-08
申请号：US12874496
申请日：2010-09-02
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： C25D7/12 , B32B38/00 , C25D5/10
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process.
摘要翻译：用于制备用于光伏器件的p型半导体层的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触来将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲烷磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。还公开了通过电镀工艺形成镓或镓合金的热界面的工艺。

2. 发明申请

US20130008798A1 ELECTRODEPOSITION METHODS OF GALLIUM AND GALLIUM ALLOY FILMS AND RELATED PHOTOVOLTAIC STRUCTURES 审中-公开
标题翻译：镓和镓合金膜的电沉积方法和相关的光伏结构
公开(公告)号：US20130008798A1
公开(公告)日：2013-01-10
申请号：US13604054
申请日：2012-09-05
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： C25D5/10 , C25D5/50 , C25D5/48
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.
摘要翻译：用于制备p型半导体的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。还公开了形成镓或镓合金的热界面的方法。

3. 发明授权

US09401443B2 Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures 有权
标题翻译：镓和镓合金膜和相关光伏结构的电沉积方法
公开(公告)号：US09401443B2
公开(公告)日：2016-07-26
申请号：US13604054
申请日：2012-09-05
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： C25D3/38 , C25D3/54 , C25D3/56 , C25D3/58 , C25D7/12 , C25D5/10 , H01L31/032 , C25D5/56 , H01L21/02 , H01L31/0749 , H01L23/373
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.
摘要翻译：用于制备p型半导体的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。还公开了形成镓或镓合金的热界面的方法。

4. 发明授权

US09647151B2 Checking the stoichiometry of I-III-VI layers for use in photovoltaic using improved electrolysis conditions 有权
公开(公告)号：US09647151B2
公开(公告)日：2017-05-09
申请号：US13879703
申请日：2011-10-10
申请人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan , Qiang Huang , Shafaat Ahmed
发明人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan , Qiang Huang , Shafaat Ahmed
IPC分类号： H01L31/0264 , C25D5/10 , C25D7/06 , C25D21/12 , H01L31/032 , H01L21/02
CPC分类号： H01L31/0264 , C25D5/10 , C25D7/0692 , C25D21/12 , H01L21/02521 , H01L31/0322 , Y02E10/541
摘要： The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

5. 发明申请

US20130269780A1 INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE 审中-公开
标题翻译： I-III-VI2材料层与莫氏体基板之间的界面
公开(公告)号：US20130269780A1
公开(公告)日：2013-10-17
申请号：US13995269
申请日：2011-12-20
申请人： Pierre-Philippe Grand , Jesus Salvadoe Jaime Ferrer , Emmanuel Roche , Hariklia Deligianni , Raman Vaidyanathan , Kathleen B. Reuter , Qiang Huang , Lubomyr Romankiw , Maurice Mason , Donna S. Zupanski-Nielsen
发明人： Pierre-Philippe Grand , Jesus Salvadoe Jaime Ferrer , Emmanuel Roche , Hariklia Deligianni , Raman Vaidyanathan , Kathleen B. Reuter , Qiang Huang , Lubomyr Romankiw , Maurice Mason , Donna S. Zupanski-Nielsen
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
摘要翻译：本发明涉及一种由合金制成并具有光伏特性的薄层制造方法。根据本发明的方法包括第一步骤：a）在衬底（SUB）上沉积适应层（MO）; b）在所述适配层上沉积包含至少元件I和/或III的至少一层（SEED）层。适应层沉积在接近真空条件下，步骤b）包括在与适应层的沉积相同的条件下沉积I和/或III元素的第一层的第一操作，而不暴露于空气中的适配层。

6. 发明申请

US20110108115A1 Forming a Photovoltaic Device 审中-公开
标题翻译：形成光伏器件
公开(公告)号：US20110108115A1
公开(公告)日：2011-05-12
申请号：US12616745
申请日：2009-11-11
申请人： Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/0322 , C25D3/56 , H01L31/18 , Y02E10/541
摘要： Methods for forming photovoltaic devices, methods for forming semiconductor compounds, photovoltaic device and chemical solutions are presented. For example, a method for forming a photovoltaic device comprising a semiconductor layer includes forming the semiconductor layer by electrodeposition from an electrolyte solution. The electrolyte solution includes copper, indium, gallium, selenous acid (H2SeO3) and water.
摘要翻译：提出了形成光伏器件的方法，形成半导体化合物的方法，光伏器件和化学溶液。例如，形成包含半导体层的光电器件的方法包括通过电解液的电沉积来形成半导体层。电解质溶液包括铜，铟，镓，硒酸（H 2 SeO 3）和水。

7. 发明授权

US09085829B2 Electrodeposition of thin-film cells containing non-toxic elements 有权
标题翻译：含有无毒元素的薄膜电池的电沉积
公开(公告)号：US09085829B2
公开(公告)日：2015-07-21
申请号：US13222266
申请日：2011-08-31
申请人： Hariklia Deligianni , Lian Guo , Raman Vaidyanathan
发明人： Hariklia Deligianni , Lian Guo , Raman Vaidyanathan
IPC分类号： H01L21/00 , C25D5/10 , C25D3/58 , C25D5/48 , C25D5/50 , H01L31/032
CPC分类号： C25D5/006 , C25D3/58 , C25D5/06 , C25D5/10 , C25D5/48 , C25D5/50 , C25D7/12 , H01L31/032 , H01L31/0326 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： A structure and method of making a thin-film solar cell. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.
摘要翻译：制造薄膜太阳能电池的结构和方法。薄膜太阳能电池包括基板，吸收层和缓冲层。吸收层通过单步本体电化学方法或多层电化学方法沉积。通过诸如多层沉积或原子层沉积的电化学沉积工艺沉积缓冲层。吸收器和缓冲层是无毒材料，其可以包括在沉积过程中引入的硫或通过退火步骤沉积后结合的硫。

8. 发明申请

US20120048378A1 ELECTRODEPOSITION OF THIN-FILM CELLS CONTAINING NON-TOXIC ELEMENTS 有权
标题翻译：含有非毒性元素的薄膜电池的电沉积
公开(公告)号：US20120048378A1
公开(公告)日：2012-03-01
申请号：US13222266
申请日：2011-08-31
申请人： Hariklia Deligianni , Lian Guo , Raman Vaidyanathan
发明人： Hariklia Deligianni , Lian Guo , Raman Vaidyanathan
IPC分类号： C25D5/10 , H01L31/0272 , H01L31/02
CPC分类号： C25D5/006 , C25D3/58 , C25D5/06 , C25D5/10 , C25D5/48 , C25D5/50 , C25D7/12 , H01L31/032 , H01L31/0326 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： A structure and method of making a thin-film solar cell. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.
摘要翻译：制造薄膜太阳能电池的结构和方法。薄膜太阳能电池包括基板，吸收层和缓冲层。吸收层通过单步本体电化学方法或多层电化学方法沉积。通过诸如多层沉积或原子层沉积的电化学沉积工艺沉积缓冲层。吸收器和缓冲层是无毒材料，其可以包括在沉积过程中引入的硫或通过退火步骤沉积后结合的硫。

9. 发明授权

US07923628B2 Method of controlling the composition of a photovoltaic thin film 有权
标题翻译：控制光伏薄膜组成的方法
公开(公告)号：US07923628B2
公开(公告)日：2011-04-12
申请号：US12556335
申请日：2009-09-09
申请人： Hariklia Deligianni , Harold J. Hovel , Raman Vaidyanathan
发明人： Hariklia Deligianni , Harold J. Hovel , Raman Vaidyanathan
IPC分类号： H01L31/0216 , H01L31/18 , H01L21/3205 , H01L21/31
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.
摘要翻译：一种在退火工艺中减少光伏薄膜结构元件损耗的方法，包括在衬底上沉积薄膜，其中薄膜包括单一化学元素或化合物，用保护层涂覆薄膜以形成涂覆的薄膜结构，其中所述保护层防止在退火过程期间所述单一化学元素或所述化学化合物的一部分的部分逸出，并且使所述涂覆的薄膜结构退火以形成涂覆的光伏薄膜结构，其中涂覆的光伏薄膜保留在保护层退火期间防止单一化学元素或化学化合物部分逸出的部分。

10. 发明授权

US08633633B2 Piezoelectric based energy supply using independent piezoelectric components 有权
标题翻译：使用独立压电元件的压电式能量供应
公开(公告)号：US08633633B2
公开(公告)日：2014-01-21
申请号：US13570692
申请日：2012-08-09
申请人： Raman Vaidyanathan
发明人： Raman Vaidyanathan
IPC分类号： H02N2/18
CPC分类号： H02N2/18
摘要： A piezoelectric based energy supply includes a multiplicity of mechanical actuators able to be displaced through operation by an operator from a first position and a second position. A multiplicity of independent piezoelectric components is disposed below the multiplicity of actuators. Each independent piezoelectric component within the multiplicity of independent piezoelectric components is associated with at least one respective actuator in the multiplicity of actuators and is adapted to be deformed by displacement of the at least one respective actuator within the plurality of actuators from a first position and a second position. An electrical coupler electrically couples each of the multiplicity of independent piezoelectric components.
摘要翻译：基于压电的能量供应包括多个可由操作者从第一位置和第二位置移动的机械致动器。多个独立的压电元件设置在多个致动器的下方。多个独立压电元件内的每个独立的压电元件与多个致动器中的至少一个相应的致动器相关联，并且适于通过在多个致动器内的至少一个相应致动器从第一位置和第二名电耦合器电耦合多个独立压电元件中的每一个。

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