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1. 发明授权

US08343366B2 Fabricating a graphene nano-device 有权
标题翻译：制造石墨烯纳米器件
公开(公告)号：US08343366B2
公开(公告)日：2013-01-01
申请号：US12211006
申请日：2008-09-15
申请人： Seunghun Hong , Joohyung Lee , Tae Hyun Kim
发明人： Seunghun Hong , Joohyung Lee , Tae Hyun Kim
IPC分类号： B44C1/22
CPC分类号： H01L29/16 , B82Y10/00 , H01L21/3081 , H01L21/3083 , H01L29/0665 , H01L29/0673 , H01L29/1606
摘要： Nanoscale graphene structure fabrication techniques are provided. An oxide nanowire useful as a mask is formed on a graphene layer and then ion beam etching is performed. A nanoscale graphene structure is fabricated by removing a remaining oxide nanowire after the ion beam etching.
摘要翻译：提供了纳米级石墨烯结构制造技术。在石墨烯层上形成用作掩模的氧化物纳米线，然后进行离子束蚀刻。通过在离子束蚀刻之后去除剩余的氧化物纳米线来制造纳米尺度的石墨烯结构。

2. 发明申请

US20100032409A1 FABRICATING A GRAPHENE NANO-DEVICE 有权
标题翻译：制作石墨纳米器件
公开(公告)号：US20100032409A1
公开(公告)日：2010-02-11
申请号：US12211006
申请日：2008-09-15
申请人： Seunghun Hong , Joohyung Lee , Tae Hyun Kim
发明人： Seunghun Hong , Joohyung Lee , Tae Hyun Kim
IPC分类号： B44C1/22
CPC分类号： H01L29/16 , B82Y10/00 , H01L21/3081 , H01L21/3083 , H01L29/0665 , H01L29/0673 , H01L29/1606
摘要： Nanoscale graphene structure fabrication techniques are provided. An oxide nanowire useful as a mask is formed on a graphene layer and then ion beam etching is performed. A nanoscale graphene structure is fabricated by removing a remaining oxide nanowire after the ion beam etching.
摘要翻译：提供了纳米级石墨烯结构制造技术。在石墨烯层上形成可用作掩模的氧化物纳米线，然后进行离子束蚀刻。通过在离子束蚀刻之后去除剩余的氧化物纳米线来制造纳米尺度的石墨烯结构。

3. 发明申请

US20120012817A1 Semiconductor devices and methods of manufacturing an operating same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20120012817A1
公开(公告)日：2012-01-19
申请号：US13200363
申请日：2011-09-23
申请人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
发明人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
IPC分类号： H01L29/76 , H01L21/336 , H01L29/788
CPC分类号： H01L29/792 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L51/0048 , H01L51/0541
摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.
摘要翻译：可以公开半导体器件以及制造和操作半导体器件的方法。半导体器件可以包括不同的纳米结构。半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。纳米线可以是双极碳纳米管（CNTs）。第一元件可以是沟道层。第二元件可以是电荷陷阱层。在这方面，半导体器件可以是晶体管或存储器件。

4. 发明申请

US20100035186A1 MANUFACTURING A GRAPHENE DEVICE AND A GRAPHENE NANOSTRUCTURE SOLUTION 审中-公开
标题翻译：制造石墨装置和石墨纳米结构解决方案
公开(公告)号：US20100035186A1
公开(公告)日：2010-02-11
申请号：US12210991
申请日：2008-09-15
申请人： Seunghun Hong , Juntae Koh
发明人： Seunghun Hong , Juntae Koh
IPC分类号： G03F7/20 , H01B1/04 , H01B1/24 , H01B1/22
CPC分类号： H01B1/24 , H01B1/04
摘要： Techniques for manufacturing a graphene structure solution and a graphene device are provided. A uniform graphene nanostructure solution is produced by applying anisotropic etching on a multi-layered graphene using an oxide nanowire as a mask. A graphene device is manufactured by dipping a substrate with a pattern of a molecule layer in a graphene nanostructure solution so that graphenes are aligned on the substrate with the pattern.
摘要翻译：提供了用于制造石墨烯结构溶液和石墨烯装置的技术。通过使用氧化物纳米线作为掩模在多层石墨烯上施加各向异性蚀刻来制造均匀的石墨烯纳米结构溶液。通过将具有分子层图案的衬底浸渍在石墨烯纳米结构溶液中来制造石墨烯器件，使得石墨烯与图案在衬底上对准。

5. 发明授权

US07446324B2 Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
标题翻译：使用扫描探针显微镜尖端及其产品或由其制造的方法
公开(公告)号：US07446324B2
公开(公告)日：2008-11-04
申请号：US10951031
申请日：2004-09-28
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： G21G5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基板为“墨水”。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

6. 发明授权

US06827979B2 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US06827979B2
公开(公告)日：2004-12-07
申请号：US09866533
申请日：2001-05-24
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D500
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基板为“墨水”。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

7. 发明授权

US08247032B2 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US08247032B2
公开(公告)日：2012-08-21
申请号：US11933275
申请日：2007-10-31
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/84 , Y10S977/857 , Y10S977/863 , Y10S977/877 , Y10T428/24917 , Y10T436/24
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). The method include the following steps: (i) providing a substrate and a scanning probe microscope tip; (ii) coating the tip with a patterning compound and a solvent to form a wet tip; and (iii) contacting the coated tip with the substrate so that the compound is applied to the substrate so as to produce a desired pattern. The invention also provides substrates patterned by DPN and kits for performing DPN.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。该方法包括以下步骤：（i）提供基板和扫描探针显微镜尖端; （ii）用图案化化合物和溶剂涂覆尖端以形成湿的尖端; 和（iii）使涂覆的末端与基底接触，使得将化合物施加到基底上以产生所需的图案。本发明还提供由DPN图案化的基材和用于进行DPN的试剂盒。

8. 发明授权

US08187673B2 Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
标题翻译：使用扫描探针显微镜尖端及其产品或由其制造的方法
公开(公告)号：US08187673B2
公开(公告)日：2012-05-29
申请号：US11933251
申请日：2007-10-31
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D3/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固体底物作为“墨水”。DPN中使用分子从SPM尖端到固体基质的毛细管转运，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微米级和纳米级器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

9. 发明申请

US20100047581A1 ACTIN FILAMENT ASSOCIATED NANODEVICES 审中-公开
标题翻译： ACTIN FILAMENT相关纳米器件
公开(公告)号：US20100047581A1
公开(公告)日：2010-02-25
申请号：US12197725
申请日：2008-08-25
申请人： Seunghun Hong , Kyung-Eun Byun
发明人： Seunghun Hong , Kyung-Eun Byun
IPC分类号： B32B9/00 , G03F7/20 , B05D5/00
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0093 , Y10T428/30
摘要： Techniques for assembling actin filaments on a substrate and nanodevices including actin filaments are provided.
摘要翻译：提供了将肌动蛋白丝组装在基质和包括肌动蛋白丝的纳米装置上的技术。

10. 发明申请

US20100045610A1 TRANSPARENT CONDUCTIVE FILMS 审中-公开
标题翻译：透明导电膜
公开(公告)号：US20100045610A1
公开(公告)日：2010-02-25
申请号：US12195356
申请日：2008-08-20
申请人： Seunghun Hong , Moon Gyu Sung
发明人： Seunghun Hong , Moon Gyu Sung
IPC分类号： G06F3/041 , B32B9/00 , B05D5/00
CPC分类号： G06F3/0414 , G06F3/045 , H01B1/04 , H01B1/08
摘要： A transparent conductive film comprised of a carbon nanotube network and indium tin oxide composite and a method for manufacturing the transparent conductive film are provided.
摘要翻译：提供由碳纳米管网络和氧化铟锡复合物构成的透明导电膜和制造透明导电膜的方法。

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