专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10192654B2 Flat cable and manufacturing method thereof 有权
公开(公告)号：US10192654B2
公开(公告)日：2019-01-29
申请号：US15539872
申请日：2016-03-15
申请人： Thomas Engineering Co., LTD. , Moon Gyu Sung
发明人： Moon Gyu Sung
IPC分类号： H01B7/08 , F16L3/015 , H01B13/00
摘要： Provided are a flat cable and a manufacturing method thereof, and particularly, a flat cable including: a pod including pipe type insertion portions formed to be separated from each other by a predetermined distance at both side ends thereof and a central insertion portion of which both ends are integrally connected to the both pipe type insertion portions; a pair of left and right support members inserted into the pipe insertion portions; and multiple electric cables inserted into the central insertion portion and the central insertion portion of the pod is partitioned into multiple spaces separated from each other and multiple electric cables 30 are horizontally disposed in the separated spaces in one layer to minimize mutual entangling or friction of the electric cables.

2. 发明授权

US07785754B2 Defect repair method for photomask and defect-free photomask 有权
标题翻译：光掩模和无缺陷光掩模的缺陷修复方法
公开(公告)号：US07785754B2
公开(公告)日：2010-08-31
申请号：US11836256
申请日：2007-08-09
申请人： Hong-seok Sim , Moon-gyu Sung , Sang-hyeon Lee
发明人： Hong-seok Sim , Moon-gyu Sung , Sang-hyeon Lee
IPC分类号： G03F1/00
CPC分类号： G03F1/72
摘要： A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect free photomask is produced.
摘要翻译：修复具有凹陷缺陷的光掩模的方法包括在透明基板上提供包括凹陷缺陷的光掩模，形成覆盖凹陷缺陷的保护层，用保护层蚀刻光掩模的透明基板的预定深度作为蚀刻掩模，并且在未蚀刻的保护层下去除保护层和透明基板，其中制造无缺陷的光掩模。

3. 发明申请

US20100119710A1 Patterning apparatus and method using dip-pen nanolithography 审中-公开
标题翻译：使用浸笔纳米光刻的图案设备和方法
公开(公告)号：US20100119710A1
公开(公告)日：2010-05-13
申请号：US12585873
申请日：2009-09-28
申请人： Seung Hun Hong , Tae Yun Lee , Jong Han Oh , Moon Gyu Sung , Dong Min Kim
发明人： Seung Hun Hong , Tae Yun Lee , Jong Han Oh , Moon Gyu Sung , Dong Min Kim
IPC分类号： B05D5/00 , B05C11/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： An apparatus and a method according to example embodiments is capable of patterning ink on a substrate by using dip-pen nanolithography regardless of the interaction between the ink and the substrate. The patterning apparatus may includes a heat supply control device. The heat supply control device may supply heat so as to liquefy the ink and facilitate the patterning of the ink on the substrate. The melting point of the ink may be set within the predetermined temperature controlled by the heat supply control device.
摘要翻译：根据示例性实施例的装置和方法能够通过使用浸笔纳米光刻技术在基板上图案化墨，而不管油墨和基板之间的相互作用如何。图案形成装置可以包括供热控制装置。供热控制装置可以供应热量以使油墨液化并促进油墨在基板上的图案化。油墨的熔点可以设定在由供热控制装置控制的预定温度内。

4. 发明申请

US20100045610A1 TRANSPARENT CONDUCTIVE FILMS 审中-公开
标题翻译：透明导电膜
公开(公告)号：US20100045610A1
公开(公告)日：2010-02-25
申请号：US12195356
申请日：2008-08-20
申请人： Seunghun Hong , Moon Gyu Sung
发明人： Seunghun Hong , Moon Gyu Sung
IPC分类号： G06F3/041 , B32B9/00 , B05D5/00
CPC分类号： G06F3/0414 , G06F3/045 , H01B1/04 , H01B1/08
摘要： A transparent conductive film comprised of a carbon nanotube network and indium tin oxide composite and a method for manufacturing the transparent conductive film are provided.
摘要翻译：提供由碳纳米管网络和氧化铟锡复合物构成的透明导电膜和制造透明导电膜的方法。

5. 发明申请

US20060019174A1 Photo mask and method of correcting the transmissivity of a photo mask 失效
公开(公告)号：US20060019174A1
公开(公告)日：2006-01-26
申请号：US11045045
申请日：2005-01-31
申请人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
发明人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
IPC分类号： C23C14/32 , G06K9/00 , C23C14/00 , G03F1/00
CPC分类号： G03F7/70433 , G03F1/60 , G03F1/72 , G03F7/70625
摘要： A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.

6. 发明授权

US07521156B2 Photo mask and method of correcting the transmissivity of a photo mask 失效
标题翻译：照相掩模和校正透光率的方法
公开(公告)号：US07521156B2
公开(公告)日：2009-04-21
申请号：US11045045
申请日：2005-01-31
申请人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
发明人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F7/70433 , G03F1/60 , G03F1/72 , G03F7/70625
摘要： A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.
摘要翻译：校正用于形成图案（例如光致抗蚀剂图案）的光掩模，以补偿光掩模的透射率的差异，这导致图案的临界尺寸分布太大或偏离太多模式的目标关键维度。光掩模包括透明基板，限定透明基板上的透射部位的遮光层图案，并且其中至少一些位置的透射率相对较低。修正光掩模的方法包括用离子掺杂光掩模的透明基片的前表面。可以掺杂预定数量的部位以缩小使用光掩模形成的图案的临界尺寸的分布，或者可以掺杂光掩模的所有透射部位以使得图案的临界尺寸的平均值更接近模式的目标关键维度。

7. 发明申请

US20080081267A1 Defect Repair Method for Photomask and Defect-Free Photomask 有权
标题翻译：光掩模和无缺陷光掩模的缺陷修复方法
公开(公告)号：US20080081267A1
公开(公告)日：2008-04-03
申请号：US11836256
申请日：2007-08-09
申请人： Hong-seok Sim , Moon-gyu Sung , Sang-hyeon Lee
发明人： Hong-seok Sim , Moon-gyu Sung , Sang-hyeon Lee
IPC分类号： G03F1/00
CPC分类号： G03F1/72
摘要： A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect tree photomask is produced.
摘要翻译：修复具有凹陷缺陷的光掩模的方法包括在透明基板上提供包括凹陷缺陷的光掩模，形成覆盖凹陷缺陷的保护层，用保护层蚀刻光掩模的透明基板的预定深度作为蚀刻掩模，并且在未蚀刻保护层下移除保护层和透明基板，其中制造缺陷树光掩模。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式