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    • 3. 发明授权
    • Light emitting diode and method of fabricating the same
    • 发光二极管及其制造方法
    • US07482189B2
    • 2009-01-27
    • US11896634
    • 2007-09-04
    • Jeong-wook LeeVassili LeniachineMi-jeong SongSuk-ho YoonHyun-soo Kim
    • Jeong-wook LeeVassili LeniachineMi-jeong SongSuk-ho YoonHyun-soo Kim
    • H01L27/25H01L29/22
    • H01L33/24H01L33/0075
    • A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.
    • 提供了一种发光二极管(LED)和方法,用于制造具有改进结构的LED,以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层,以具有多个突起,从而具有不平坦表面,其中突起的侧表面以第一倾斜角α(35°<=α<= 90°)倾斜 )相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层,其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β(35°,β=α)倾斜, 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层,其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ(20°,γ= 相对于衬底的上表面<=β); 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。
    • 4. 发明申请
    • Light emitting diode and method of fabricating the same
    • 发光二极管及其制造方法
    • US20080032436A1
    • 2008-02-07
    • US11896634
    • 2007-09-04
    • Jeong-wook LeeVassili LeniachineMi-jeong SongSuk-ho YoonHyun-soo Kim
    • Jeong-wook LeeVassili LeniachineMi-jeong SongSuk-ho YoonHyun-soo Kim
    • H01L33/00
    • H01L33/24H01L33/0075
    • A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.
    • 提供了一种发光二极管(LED)和方法,用于制造具有改进结构的LED,以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层,以具有多个突起,从而具有不平坦表面,其中突起的侧表面以第一倾斜角α(35°<=α<= 90°)倾斜 )相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层,其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β(35°,β=α)倾斜, 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层,其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ(20°,γ= 相对于衬底的上表面<=β); 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。
    • 5. 发明申请
    • Light emitting diode and method of fabricating the same
    • 发光二极管及其制造方法
    • US20070012933A1
    • 2007-01-18
    • US11448832
    • 2006-06-08
    • Jeong-wook LeeVassili LeniachineMi-jeong SongSuk-ho YoonHyun-soo Kim
    • Jeong-wook LeeVassili LeniachineMi-jeong SongSuk-ho YoonHyun-soo Kim
    • H01L33/00
    • H01L33/24H01L33/0075
    • A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ
    • 提供了一种发光二极管(LED)和方法,用于制造具有改进结构的LED,以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层,以具有多个突起,从而具有不平坦表面,其中突起的侧表面以第一倾斜角α(35°<=α<= 90°)倾斜 )相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层,其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β(35°,β=α)倾斜, 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层,其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ(20°,γ= β)相对于所述基板的上表面; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。
    • 6. 发明申请
    • ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 有机发光装置及其制造方法
    • US20070270072A1
    • 2007-11-22
    • US11834949
    • 2007-08-07
    • Mu-Gyeom KIMSang-Yeol KIMVassili LeniachineMi-jeong Song
    • Mu-Gyeom KIMSang-Yeol KIMVassili LeniachineMi-jeong Song
    • H01J9/00
    • H01L51/5271H01L51/52H01L51/5203H01L51/524H01L51/5253Y10S428/917
    • An organic light emitting device can includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.
    • 有机发光器件可以包括在基板上用作电极的第一和第二金属层,第一金属层上的电子传输层,将第一金属层与第二金属层绝缘并延伸到电子传输层上的第一分隔壁 沿着第一金属层,围绕电子传输层的第一金属层上的第二分隔壁,与第一分隔壁和第二金属层分离的第三隔壁,电子传输层上的有机发光层, 空穴传输层,并且与第二金属层接触,覆盖空穴传输层并延伸到超过第二和第三隔壁的第一和第二金属层的保护层,以及填充保护层之间的空间的密封材料 以及第一层和第二层。