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1. 发明授权

US08253892B2 Liquid crystal display and method for manufacturing the same 失效
标题翻译：液晶显示器及其制造方法
公开(公告)号：US08253892B2
公开(公告)日：2012-08-28
申请号：US12547039
申请日：2009-08-25
申请人： Seung-Hwan Shim , Gug-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi , Yang-Ho Jung
发明人： Seung-Hwan Shim , Gug-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi , Yang-Ho Jung
IPC分类号： G02F1/1335
CPC分类号： G02F1/136227 , G02F1/133514 , G02F2001/133565 , G02F2001/133567 , H01L27/1248
摘要： A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.
摘要翻译：液晶显示器包括：设置在第一基板上的第一基板，栅线和数据线，包括与数据线对准的突起和凹陷的滤色器，滤色器设置在数据线上，设置在滤色器上的像素电极，面对第一基板的第二基板，设置在第二基板上的公共电极以及插在第一基板和第二基板之间的液晶层。

2. 发明授权

US08822995B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08822995B2
公开(公告)日：2014-09-02
申请号：US12486542
申请日：2009-06-17
申请人： Chun-Gi You , Kap-Soo Yoon , Gug-Rae Jo , Sung-Hoon Yang , Ki-Hun Jeong , Seung-Hwan Shim , Jae-Ho Choi
发明人： Chun-Gi You , Kap-Soo Yoon , Gug-Rae Jo , Sung-Hoon Yang , Ki-Hun Jeong , Seung-Hwan Shim , Jae-Ho Choi
IPC分类号： H01L29/04 , H01L27/12 , H01L27/32 , H01L29/786
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3262 , H01L29/7869
摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.
摘要翻译：显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案，电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

3. 发明授权

US08384871B2 Liquid crystal display apparatus and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08384871B2
公开(公告)日：2013-02-26
申请号：US12686012
申请日：2010-01-12
申请人： Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
发明人： Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1339
CPC分类号： G02F1/1345 , G02F2001/133519
摘要： In a liquid crystal display (LCD) apparatus and a method for manufacturing the LCD apparatus, the LCD apparatus includes first and second substrates, and a liquid crystal layer disposed between the first and second substrates. The first substrate includes a transparent insulating substrate, a conductive layer formed over an entire surface of the transparent insulating substrate, and a transparent conductive electrode formed on the conductive layer.
摘要翻译：在液晶显示（LCD）装置和LCD装置的制造方法中，LCD装置包括第一和第二基板以及设置在第一和第二基板之间的液晶层。第一基板包括透明绝缘基板，形成在透明绝缘基板的整个表面上的导电层和形成在导电层上的透明导电电极。

4. 发明授权

US08237878B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08237878B2
公开(公告)日：2012-08-07
申请号：US12536693
申请日：2009-08-06
申请人： Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要： A liquid crystal display (LCD) includes a gate wiring, a first insulating substrate, an oxide active layer pattern, a data wiring, a floating electrode, and an upper gate electrode. The gate wiring includes a gate line formed on the first insulating substrate and a lower gate electrode extending from the gate line. The oxide active layer pattern is formed on the gate wiring. The data wiring includes a data line intersecting the gate line. The floating electrode generates a coupling capacitance by overlapping the gate wiring. The upper gate electrode is capacitively coupled to the lower gate electrode.
摘要翻译：液晶显示器（LCD）包括栅极布线，第一绝缘基板，氧化物活性层图案，数据布线，浮动电极和上部栅电极。栅极布线包括形成在第一绝缘基板上的栅极线和从栅极线延伸的下部栅电极。氧化物有源层图案形成在栅极布线上。数据线包括与栅极线相交的数据线。浮动电极通过重叠栅极布线而产生耦合电容。上栅电极电容耦合到下栅电极。

5. 发明申请

US20100053486A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20100053486A1
公开(公告)日：2010-03-04
申请号：US12536693
申请日：2009-08-06
申请人： Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： G02F1/1343 , G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136213 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要： A liquid crystal display (LCD) includes a gate wiring, a first insulating substrate, an oxide active layer pattern, a data wiring, a floating electrode, and an upper gate electrode. The gate wiring includes a gate line formed on the first insulating substrate and a lower gate electrode extending from the gate line. The oxide active layer pattern is formed on the gate wiring. The data wiring includes a data line intersecting the gate line. The floating electrode generates a coupling capacitance by overlapping the gate wiring. The upper gate electrode is capacitively coupled to the lower gate electrode.
摘要翻译：液晶显示器（LCD）包括栅极布线，第一绝缘基板，氧化物活性层图案，数据布线，浮动电极和上部栅电极。栅极布线包括形成在第一绝缘基板上的栅极线和从栅极线延伸的下部栅电极。氧化物有源层图案形成在栅极布线上。数据线包括与栅极线相交的数据线。浮动电极通过重叠栅极布线而产生耦合电容。上栅电极电容耦合到下栅电极。

6. 发明授权

US08642367B2 Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same 失效
标题翻译：具有改进的可制造性的薄膜晶体管和用于制造包含它的显示面板的方法
公开(公告)号：US08642367B2
公开(公告)日：2014-02-04
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

7. 发明申请

US20090152635A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 有权
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20090152635A1
公开(公告)日：2009-06-18
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

8. 发明申请

US20110159622A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 失效
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20110159622A1
公开(公告)日：2011-06-30
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L33/62
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

9. 发明授权

US07923732B2 Thin film transistor and method for manufacturing a display panel 有权
标题翻译：薄膜晶体管及制造显示面板的方法
公开(公告)号：US07923732B2
公开(公告)日：2011-04-12
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

10. 发明授权

US08184251B2 Thin film transistor array and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US08184251B2
公开(公告)日：2012-05-22
申请号：US12498526
申请日：2009-07-07
申请人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
发明人： Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
IPC分类号： G02F1/1333
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

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