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    • 3. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    • 薄膜晶体管阵列及其制造方法
    • US20110254815A1
    • 2011-10-20
    • US12910268
    • 2010-10-22
    • Jae-Sung KIMHoon KANGYang-Ho JUNG
    • Jae-Sung KIMHoon KANGYang-Ho JUNG
    • G09G5/00H01L33/08
    • G02F1/136227G02F1/00H01L27/1248H01L27/1288H01L29/41733
    • A manufacturing method of a thin film transistor array panel includes forming a gate line, forming a gate insulating layer on the gate line, forming a data line including a drain electrode on the gate insulating layer, forming a passivation layer on the gate insulating layer, the data line, and the drain electrode, forming a negative photosensitive organic layer on the passivation layer, heat treating the negative photosensitive organic layer to form an insulating layer including a first portion, and a second portion that is thinner than the first portion, and forming a pixel electrode, a first contact assistant, and a second contact assistant on the insulating layer. The pixel electrode is disposed on the first portion, the first and second contact assistants are disposed on the second portion, and the thickness of the second portion is less than about 1.5 micrometers (μm).
    • 薄膜晶体管阵列面板的制造方法包括形成栅极线,在栅极线上形成栅极绝缘层,在栅极绝缘层上形成包括漏电极的数据线,在栅极绝缘层上形成钝化层, 数据线和漏电极,在钝化层上形成负光敏有机层,对负光敏有机层进行热处理,形成包含第一部分的绝缘层和比第一部分薄的第二部分,以及 在绝缘层上形成像素电极,第一接触辅助件和第二接触辅助件。 像素电极设置在第一部分上,第一和第二接触助剂设置在第二部分上,第二部分的厚度小于约1.5微米(μm)。