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1. 发明授权

US08599294B2 Pixel, pixel array, image sensor including the same and method for operating the image sensor 有权
标题翻译：像素像素阵列，图像传感器包括与图像传感器相同的操作方法
公开(公告)号：US08599294B2
公开(公告)日：2013-12-03
申请号：US13097704
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon II Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon II Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3559 , H04N5/37452
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储光电转换单元的第一电荷量的第一电容器; 用于存储光电转换单元的第二数量的电荷的第二电容器; 以及输出单元，用于输出第一和第二数量的电荷。

2. 发明申请

US20120257092A1 PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME AND METHOD FOR OPERATING THE IMAGE SENSOR 有权
标题翻译：像素，像素阵列，包括它们的图像传感器和操作图像传感器的方法
公开(公告)号：US20120257092A1
公开(公告)日：2012-10-11
申请号：US13097681
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H04N5/355 , H04N5/35536 , H04N5/37457
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a capacitor for storing charges converted by the photo-electro conversion unit; an output switching device for outputting an electric potential of the capacitor; and a removal unit for removing a part of the charges converted by the photo-electro conversion unit.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储由光电转换单元转换的电荷的电容器; 用于输出电容器的电位的输出开关装置; 以及去除由光电转换单元转换的电荷的一部分的去除单元。

3. 发明申请

US20120257093A1 PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME AND METHOD FOR OPERATING THE IMAGE SENSOR 有权
标题翻译：像素，像素阵列，包括它们的图像传感器和操作图像传感器的方法
公开(公告)号：US20120257093A1
公开(公告)日：2012-10-11
申请号：US13097704
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3559 , H04N5/37452
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储光电转换单元的第一电荷量的第一电容器; 用于存储光电转换单元的第二数量的电荷的第二电容器; 以及输出单元，用于输出第一和第二数量的电荷。

4. 发明授权

US08704928B2 Pixel, pixel array, image sensor including the same and method for operating the image sensor 有权
标题翻译：像素像素阵列，图像传感器包括与图像传感器相同的操作方法
公开(公告)号：US08704928B2
公开(公告)日：2014-04-22
申请号：US13097681
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H04N5/355 , H04N5/35536 , H04N5/37457
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a capacitor for storing charges converted by the photo-electro conversion unit; an output switching device for outputting an electric potential of the capacitor; and a removal unit for removing a part of the charges converted by the photo-electro conversion unit.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储由光电转换单元转换的电荷的电容器; 用于输出电容器的电位的输出开关装置; 以及去除由光电转换单元转换的电荷的一部分的去除单元。

5. 发明授权

US09287304B2 Image sensor including a pixel array each pixel comprising a variable capacitor and a capacitor 有权
标题翻译：图像传感器包括像素阵列，每个像素包括可变电容器和电容器
公开(公告)号：US09287304B2
公开(公告)日：2016-03-15
申请号：US13098030
申请日：2011-04-29
申请人： Seong Hyung Park , Woon Il Choi , Seung Hoon Sa , Cheong Yong Park , Dong Gyu Lee , Hyun Jong Ji
发明人： Seong Hyung Park , Woon Il Choi , Seung Hoon Sa , Cheong Yong Park , Dong Gyu Lee , Hyun Jong Ji
IPC分类号： H01J40/14 , H01L27/00 , H01L27/146 , H04N5/355
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3559
摘要： Provided are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a photoelectric converter, a capacitor, a variable capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The variable capacitor is connected to the capacitor, and has capacitance varied according to a potential of the capacitor. The switching element outputs the potential of the capacitor.
摘要翻译：提供了像素，像素阵列和包括像素阵列的图像传感器。像素包括光电转换器，电容器，可变电容器和开关元件。电容器累积由光电转换器转换的电荷。可变电容器连接到电容器，并且具有根据电容器的电位而变化的电容。开关元件输出电容器的电位。

6. 发明授权

US06709939B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06709939B2
公开(公告)日：2004-03-23
申请号：US10409964
申请日：2003-04-09
申请人： Hi Deok Lee , Seong Hyung Park
发明人： Hi Deok Lee , Seong Hyung Park
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L29/665 , H01L29/7833
摘要： A method for fabricating a semiconductor device is disclosed. In a high speed device structure consisting of a salicide, in order to fabricate a device having at least two gate oxide structures in the identical chip, an LDD region of a core device region is formed, and an ion implant process for forming the LDD region of an input/output device region having a thick gate oxide and a process for forming a source/drain region at the rim of a field oxide of the core device region having a thin gate oxide are performed at the same time, thereby increasing a depth of a junction region. Thus, the junction leakage current is decreased in the junction region of the peripheral circuit region, and the process is simplified. As a result, a process yield and reliability of the device are improved.
摘要翻译：公开了一种制造半导体器件的方法。在由自对准硅化物组成的高速装置结构中，为了制造在同一芯片中具有至少两个栅极氧化物结构的器件，形成芯部器件区域的LDD区域，形成LDD区域的离子注入工艺具有厚栅极氧化物的输入/输出器件区域和用于在具有薄栅极氧化物的芯器件区域的场氧化物的边缘处形成源极/漏极区域的工艺同时进行，从而增加深度的连接区域。因此，在外围电路区域的结区域中结漏电流减小，并且处理简化。结果，改善了设备的工艺成品率和可靠性。

7. 发明授权

US06586306B2 Method for fabricating semiconductor device 有权
公开(公告)号：US06586306B2
公开(公告)日：2003-07-01
申请号：US10125271
申请日：2002-04-18
申请人： Hi Deok Lee , Seong Hyung Park
发明人： Hi Deok Lee , Seong Hyung Park
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L29/665 , H01L29/7833
摘要： A method for fabricating a semiconductor device is disclosed. In a high speed device structure consisting of a salicide, in order to fabricate a device having at least two gate oxide structures in the identical chip, an LDD region of a core device region is formed, and an ion implant process for forming the LDD region of an input/output device region having a thick gate oxide and a process for forming a source/drain region at the rim of a field oxide of the core device region having a thin gate oxide are performed at the same time, thereby increasing a depth of a junction region. Thus, the junction leakage current is decreased in the junction region of the peripheral circuit region, and the process is simplified. As a result, a process yield and reliability of the device are improved.

8. 发明申请

US20140117205A1 PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING PIXEL ARRAY, AND METHOD OF DRIVING PIXEL ARRAY 有权
标题翻译：像素，像素阵列，包括像素阵列的图像传感器和驱动像素阵列的方法
公开(公告)号：US20140117205A1
公开(公告)日：2014-05-01
申请号：US14111618
申请日：2011-04-29
申请人： Seong Hyung Park
发明人： Seong Hyung Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14609 , H01L27/14643 , H04N5/35572 , H04N5/3559
摘要： Provided are a pixel, a pixel array, an image sensor including the pixel array, and a method of driving the pixel array. The pixel includes a photoelectric converter, a capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The switching element outputs a potential of the capacitor. The switching element includes a transfer switching element transferring the electric charges, converted in the photoelectric converter, to the capacitor. The capacitor serves as a storage through multi-clocking of the transfer switching element.
摘要翻译：提供像素，像素阵列，包括像素阵列的图像传感器以及驱动像素阵列的方法。像素包括光电转换器，电容器和开关元件。电容器累积由光电转换器转换的电荷。开关元件输出电容器的电位。开关元件包括将在光电转换器中转换的电荷转移到电容器的转移开关元件。电容器通过转换开关元件的多时钟作为存储器。

9. 发明授权

US09966397B2 Pixel, pixel array, image sensor including pixel array, and method of driving pixel array having a capacitor 有权
公开(公告)号：US09966397B2
公开(公告)日：2018-05-08
申请号：US14111618
申请日：2011-04-29
申请人： Seong Hyung Park
发明人： Seong Hyung Park
IPC分类号： H01L27/00 , H01L27/146 , H04N5/355
CPC分类号： H01L27/14612 , H01L27/14609 , H01L27/14643 , H04N5/35572 , H04N5/3559
摘要： Provided are a pixel, a pixel array, an image sensor including the pixel array, and a method of driving the pixel array. The pixel includes a photoelectric converter, a capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The switching element outputs a potential of the capacitor. The switching element includes a transfer switching element transferring the electric charges, converted in the photoelectric converter, to the capacitor. The capacitor serves as a storage through multi-clocking of the transfer switching element.

10. 发明授权

US09881953B2 Pixel array, image sensor including the same, and method of driving the same 有权
公开(公告)号：US09881953B2
公开(公告)日：2018-01-30
申请号：US14111628
申请日：2011-04-29
申请人： Seong Hyung Park
发明人： Seong Hyung Park
IPC分类号： H01L27/146 , H04N5/355
CPC分类号： H01L27/14612 , H01L27/14609 , H04N5/35572 , H04N5/3559
摘要： Disclosed are a pixel array, an image sensor including the same, and a method of driving the same. In a WDR (Wide Dynamic Range) pixel employing a storage region (FD node) including a varactor, a reset voltage, which is less than a voltage applied to a reset transistor according to the related art, that is, a partial reset voltage is applied to the reset transistor to read out a reset signal level for a CDS (Correlated Double Sampling) operation, thereby adjusting the operating voltage range of the storage region. The operating voltage range of the storage region is shifted into a range suitable for remarkably varying the capacitance of the varactor, thereby expanding the dynamic range.

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