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1. 发明授权

US08093636B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US08093636B2
公开(公告)日：2012-01-10
申请号：US12633435
申请日：2009-12-08
申请人： Dong-Hyuk Park
发明人： Dong-Hyuk Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H01L27/14643
摘要： A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode, a gate pattern of a transfer transistor contacting one side of the photodiode, a gate pattern of a drive transistor disposed to have a predetermined spacing distance from the gate pattern of the transfer transistor, and a floating diffusion node disposed between the gate pattern of the transfer transistor and the gate pattern of the drive transistor.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括光电二极管，与光电二极管的一侧接触的转移晶体管的栅极图案，驱动晶体管的栅极图案，被设置成与转印的栅极图案具有预定的间隔距离晶体管，以及设置在传输晶体管的栅极图案与驱动晶体管的栅极图案之间的浮动扩散节点。

2. 发明申请

US20120257093A1 PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME AND METHOD FOR OPERATING THE IMAGE SENSOR 有权
标题翻译：像素，像素阵列，包括它们的图像传感器和操作图像传感器的方法
公开(公告)号：US20120257093A1
公开(公告)日：2012-10-11
申请号：US13097704
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3559 , H04N5/37452
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储光电转换单元的第一电荷量的第一电容器; 用于存储光电转换单元的第二数量的电荷的第二电容器; 以及输出单元，用于输出第一和第二数量的电荷。

3. 发明申请

US20100075145A1 METAL-POLYMER HYBRID NANOMATERIALS, METHOD FOR PREPARING THE SAME METHOD FOR CONTROLLING OPTICAL PROPERTY OF THE SAME OPTOELECTRONIC DEVICE USING THE SAME 审中-公开
标题翻译：金属聚合物混合纳米材料，用于制备相同方法的方法，用于控制使用其的相同光电装置的光学性质
公开(公告)号：US20100075145A1
公开(公告)日：2010-03-25
申请号：US12312264
申请日：2008-09-16
申请人： Jinsoo Joo , Dong-Hyuk Park
发明人： Jinsoo Joo , Dong-Hyuk Park
IPC分类号： C09K11/02 , C25D5/56 , C25D21/12
CPC分类号： H01L51/0036 , C09K11/06 , C09K2211/14 , H01B1/12 , H01L51/0006 , H01L51/5012 , Y02E10/549 , Y10T428/2935
摘要： Metal-polymer hybrid nanomaterials are provided. The hybrid nanomaterials comprise nanotubes or nanowires and metal layers formed on the inner or outer surfaces of the nanotubes or the outer surfaces of the nanowires. The nanotubes or nanowires include a light-emitting π-conjugated polymer and the metal layers are composed of a metal whose surface plasmon energy level is close to the energy band gap of the nanotubes or nanowires. Further provided are a method for preparing the hybrid nanomaterials, a method for controlling the optical properties of the hybrid nanomaterials, and an optoelectronic device using the hybrid nanomaterials. Energy transfer and electron transfer based on surface plasmon resonance increases the number of excitons in the conduction band of the nanotubes or nanowires including the light- emitting polymer, resulting in a remarkable increase in the luminescence intensity of the metal-polymer hybrid nanomaterials. The metal-polymer hybrid nanomaterials are easy to prepare and inexpensive while possessing inherent electrical and optical properties of carbon nanotubes. In addition, the electrical and optical properties of the metal-polymer hybrid nanomaterials can be easily controlled. Based on these advantages, the metal-polymer hybrid nanomaterials can be applied to a variety of optoelectronic devices, including light-emitting diodes, solar cells and photosensors.
摘要翻译：提供金属 - 聚合物混合纳米材料。混合纳米材料包括形成在纳米管的内表面或外表面上的纳米管或纳米线和金属层，或纳米线的外表面。纳米管或纳米线包括发光和共轭聚合物，并且金属层由其表面等离子体激发能级接近于纳米管或纳米线的能带隙的金属组成。还提供了制备混合纳米材料的方法，用于控制混合纳米材料的光学性质的方法以及使用混合纳米材料的光电子器件。基于表面等离子体共振的能量转移和电子转移增加了包括发光聚合物在内的纳米管或纳米线的导带中的激子的数量，导致金属 - 聚合物混合纳米材料的发光强度显着增加。金属 - 聚合物混合纳米材料易于制备和便宜，同时具有碳纳米管的固有电学和光学性质。此外，可以容易地控制金属 - 聚合物混合纳米材料的电学和光学性质。基于这些优点，金属 - 聚合物混合纳米材料可以应用于各种光电子器件，包括发光二极管，太阳能电池和光电传感器。

4. 发明授权

US08599294B2 Pixel, pixel array, image sensor including the same and method for operating the image sensor 有权
标题翻译：像素像素阵列，图像传感器包括与图像传感器相同的操作方法
公开(公告)号：US08599294B2
公开(公告)日：2013-12-03
申请号：US13097704
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon II Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon II Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3559 , H04N5/37452
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储光电转换单元的第一电荷量的第一电容器; 用于存储光电转换单元的第二数量的电荷的第二电容器; 以及输出单元，用于输出第一和第二数量的电荷。

5. 发明申请

US20120257092A1 PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME AND METHOD FOR OPERATING THE IMAGE SENSOR 有权
标题翻译：像素，像素阵列，包括它们的图像传感器和操作图像传感器的方法
公开(公告)号：US20120257092A1
公开(公告)日：2012-10-11
申请号：US13097681
申请日：2011-04-29
申请人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
发明人： Seung Hoon Sa , Woon Il Choi , Seong Hyung Park , Chun Hee Jeong , Dong Hyuk Park , Cheong Yong Park , Jung Chan Kyoung , Jung Wan Jeong , Dong Gyu Lee , Jong Min You , Hyun Jong Ji
IPC分类号： H04N5/335
CPC分类号： H04N5/355 , H04N5/35536 , H04N5/37457
摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a capacitor for storing charges converted by the photo-electro conversion unit; an output switching device for outputting an electric potential of the capacitor; and a removal unit for removing a part of the charges converted by the photo-electro conversion unit.
摘要翻译：公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。像素包括光电转换单元; 用于存储由光电转换单元转换的电荷的电容器; 用于输出电容器的电位的输出开关装置; 以及去除由光电转换单元转换的电荷的一部分的去除单元。

6. 发明申请

US20100066768A1 PLASMA DISPLAY DEVICE 失效
标题翻译：等离子体显示设备
公开(公告)号：US20100066768A1
公开(公告)日：2010-03-18
申请号：US12560762
申请日：2009-09-16
申请人： Moon Shick Chung , Choon Sub Kim , Dong Hyuk Park
发明人： Moon Shick Chung , Choon Sub Kim , Dong Hyuk Park
IPC分类号： G09G5/10
CPC分类号： G09G3/2927 , G09G3/2003 , G09G3/2022 , G09G2310/066 , G09G2320/0238
摘要： A plasma display device is provided. The plasma display device includes a plasma display panel (PDP) having an upper substrate, a lower substrate, a plurality of scan electrodes and a plurality of sustain electrodes formed on the upper substrate, and a plurality of address electrodes formed on the lower substrate; and a driver applying driving signals to the plurality of electrodes, wherein a reset discharge occurs in a part of discharge cells. The plasma display device can contribute to the reduction of dark-area luminance and the improvement of dark-room contrast ratio.
摘要翻译：提供等离子体显示装置。等离子体显示装置包括具有上基板，下基板，多个扫描电极和形成在上基板上的多个维持电极的等离子体显示面板（PDP）和形成在下基板上的多个寻址电极。以及向多个电极施加驱动信号的驱动器，其中在放电单元的一部分中发生复位放电。等离子体显示装置可以有助于暗区亮度的降低和暗室对比度的提高。

7. 发明授权

US08541480B2 Apparatus and method for modifying physical properties of nanostructure using focused electron beam, and nano-barcode and serial-junction nanowire fabricated thereby 有权
标题翻译：使用聚焦电子束改变纳米结构的物理性能的装置和方法，以及由此制造的纳米条形码和串联结纳米线
公开(公告)号：US08541480B2
公开(公告)日：2013-09-24
申请号：US13104444
申请日：2011-05-10
申请人： Jinsoo Joo , Young Ki Hong , Dong Hyuk Park , Seong Gi Jo , Min Ho Koo
发明人： Jinsoo Joo , Young Ki Hong , Dong Hyuk Park , Seong Gi Jo , Min Ho Koo
IPC分类号： H05B6/68 , C08G61/04
CPC分类号： H01J37/3056 , B82Y40/00 , C08G2261/3221 , H01J37/26 , H01J37/317 , H01J2237/31735
摘要： According to one embodiment of the present invention, a portion of a light-emitting polymer material or a conductive polymer material can be irradiated with a focused electron beam, so that the physical properties of that portion can be modified. For this purpose, one embodiment of the present invention comprises an apparatus for modifying the physical properties of a nanostructure using a focused electron beam, the apparatus comprising: a nanostructure; a focused electron beam-irradiating unit that serves to irradiate a nanoscale electron beam such that it is focused on the nanostructure; and a focused electron beam-controlling unit that serves to control the irradiation position of the nanoscale electron beam so as to modify the physical property of a portion of the nanostructure.
摘要翻译：根据本发明的一个实施例，可以用聚焦电子束照射发光聚合物材料或导电聚合物材料的一部分，从而可以改变该部分的物理性质。为此目的，本发明的一个实施方案包括用于使用聚焦电子束修饰纳米结构的物理性质的装置，该装置包括：纳米结构; 聚焦电子束照射单元，其用于照射纳米级电子束，使得其聚焦在纳米结构上; 以及聚焦电子束控制单元，其用于控制纳米级电子束的照射位置，以便改变纳米结构的一部分的物理性质。

8. 发明申请

US20110282021A1 Apparatus and Method for Modifying Physical Properties of Nanostructure Using Focused Electron Beam, and Nano-Barcode and Serial-Junction Nanowire Fabricated Thereby 有权
标题翻译：使用聚焦电子束改变纳米结构物理性能的装置和方法，以及由此制造的纳米条形码和串联型纳米线
公开(公告)号：US20110282021A1
公开(公告)日：2011-11-17
申请号：US13104444
申请日：2011-05-10
申请人： Jinsoo JOO , Young Ki HONG , Dong Hyuk PARK , Seong Gi JO , Min Ho KOO
发明人： Jinsoo JOO , Young Ki HONG , Dong Hyuk PARK , Seong Gi JO , Min Ho KOO
IPC分类号： B01J19/08 , H01J37/26 , G06K19/06 , C08G75/06 , C08G73/06 , C08F38/00 , C08F28/06 , C08G61/02 , C08F32/08 , H01J37/28 , C08G61/10 , B82Y99/00 , B82Y40/00
CPC分类号： H01J37/3056 , B82Y40/00 , C08G2261/3221 , H01J37/26 , H01J37/317 , H01J2237/31735
摘要： According to one embodiment of the present invention, a portion of a light-emitting polymer material or a conductive polymer material can be irradiated with a focused electron beam, so that the physical properties of that portion can be modified. For this purpose, one embodiment of the present invention comprises an apparatus for modifying the physical properties of a nanostructure using a focused electron beam, the apparatus comprising: a nanostructure; a focused electron beam-irradiating unit that serves to irradiate a nanoscale electron beam such that it is focused on the nanostructure; and a focused electron beam-controlling unit that serves to control the irradiation position of the nanoscale electron beam so as to modify the physical property of a portion of the nanostructure.
摘要翻译：根据本发明的一个实施例，可以用聚焦电子束照射发光聚合物材料或导电聚合物材料的一部分，从而可以改变该部分的物理性质。为此目的，本发明的一个实施方案包括用于使用聚焦电子束修饰纳米结构的物理性质的装置，该装置包括：纳米结构; 聚焦电子束照射单元，其用于照射纳米级电子束，使得其聚焦在纳米结构上; 以及聚焦电子束控制单元，其用于控制纳米级电子束的照射位置，以便改变纳米结构的一部分的物理性质。

9. 发明申请

US20100127315A1 CMOS IMAGE SENSOR 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20100127315A1
公开(公告)日：2010-05-27
申请号：US12633435
申请日：2009-12-08
申请人： Dong-Hyuk Park
发明人： Dong-Hyuk Park
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H01L27/14643
摘要： A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode, a gate pattern of a transfer transistor contacting one side of the photodiode, a gate pattern of a drive transistor disposed to have a predetermined spacing distance from the gate pattern of the transfer transistor, and a floating diffusion node disposed between the gate pattern of the transfer transistor and the gate pattern of the drive transistor.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括光电二极管，与光电二极管的一侧接触的转移晶体管的栅极图案，驱动晶体管的栅极图案，被设置成与转印的栅极图案具有预定的间隔距离晶体管，以及设置在传输晶体管的栅极图案与驱动晶体管的栅极图案之间的浮动扩散节点。

10. 发明申请

US20070090423A1 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US20070090423A1
公开(公告)日：2007-04-26
申请号：US11584554
申请日：2006-10-23
申请人： Dong-Hyuk Park
发明人： Dong-Hyuk Park
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H01L27/14643
摘要： A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode, a gate pattern of a transfer transistor contacting one side of the photodiode, a gate pattern of a drive transistor disposed to have a predetermined spacing distance from the gate pattern of the transfer transistor, and a floating diffusion node disposed between the gate pattern of the transfer transistor and the gate pattern of the drive transistor.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括光电二极管，与光电二极管的一侧接触的转移晶体管的栅极图案，驱动晶体管的栅极图案，被设置成与转印的栅极图案具有预定的间隔距离晶体管，以及设置在传输晶体管的栅极图案与驱动晶体管的栅极图案之间的浮动扩散节点。

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