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    • 10. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07081641B2
    • 2006-07-25
    • US10786097
    • 2004-02-26
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • H01L29/08
    • H01L51/0545H01L51/0021H01L51/0037H01L51/0052H01L51/0516
    • An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
    • 本发明的目的是通过使用底接触型有机TFT作为开关元件,以低成本提供诸如显示装置,ID标签,传感器等的半导体器件。 在本发明中,底部接触型有机TFT的半导体层由多晶材料形成,TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者,底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者,在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层,其厚度不大于 并且不小于1。