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1. 发明授权

US06811671B1 Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed 有权
标题翻译：在铜表面电镀的铜 - 锌合金薄膜和由此形成的半导体器件中控制锌掺杂的方法
公开(公告)号：US06811671B1
公开(公告)日：2004-11-02
申请号：US10082433
申请日：2002-02-22
申请人： Sergey Lopatin , Alexander H. Nickel , Joffre F. Bernard
发明人： Sergey Lopatin , Alexander H. Nickel , Joffre F. Bernard
IPC分类号： C25D712
CPC分类号： H01L21/7685 , C25D3/58 , C25D5/50 , H01L21/2885 , H01L21/76858 , H01L21/76864 , H01L2221/1078 , Y10S428/935 , Y10T428/12528 , Y10T428/12903 , Y10T428/1291
摘要： A method of fabricating a semiconductor device, having a reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants; and annealing the electroplated Cu—Zn alloy thin film (30); and a semiconductor device thereby formed. The method controls the parameters of pH, temperature, and time in order to form a uniform reduced-oxygen Cu—Zn alloy thin film (30), having a controlled Zn content, for reducing electromigration on the Cu—Zn/Cu structure by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate, for improving device reliability, and for increasing corrosion resistance.
摘要翻译：一种制造半导体器件的方法，其具有通过使用电镀装置电镀电镀在Cu表面（20）上的还原氧的Cu-Zn合金薄膜（30），所述Cu表面（20）在独特的化学溶液中，所述溶液含有锌（Zn）和铜（Cu）的盐，它们的络合剂，pH调节剂和表面活性剂; 并对电镀Cu-Zn合金薄膜（30）退火; 并由此形成半导体器件。该方法控制pH，温度和时间的参数，以形成具有受控Zn含量的均匀的还原氧Cu-Zn合金薄膜（30），用于通过减少Cu-Zn / Cu结构的电迁移来减少其中除了降低空隙形成速率之外还减少Cu迁移速率，提高器件可靠性和提高耐腐蚀性的漂移速度。

2. 发明授权

US06630741B1 Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed 有权
标题翻译：通过在电镀铜 - 锌互连和由此形成的半导体器件中排序锌掺杂来减少电迁移的方法
公开(公告)号：US06630741B1
公开(公告)日：2003-10-07
申请号：US10016645
申请日：2001-12-07
申请人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
发明人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
IPC分类号： H01L2352
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/76849 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of reducing electromigration in a graded reduced-oxygen dual-inlaid copper interconnect line by filling a via with a graded Cu-rich Cu—Zn alloy fill electroplated on a Cu surface using a stable chemical solution, and by controlling and ordering the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a graded reduced-oxygen Cu—Zn alloy as fill for the via in forming the dual-inlaid interconnect structure. The graded alloy fill is formed by electroplating, while varying electroplating parameters, the Cu surface in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the graded fill on the Cu surface; and annealing the electroplated graded Cu—Zn alloy fill; and planarizing the Cu—Zn alloy fill, thereby forming the graded reduced-oxygen dual-inlaid copper interconnect line.
摘要翻译：通过使用稳定的化学溶液电镀在Cu表面上的分级富Cu Cu-Zn合金填充通孔，并且通过控制和排序Zn来减少分级的还原氧双嵌入铜互连线中的电迁移的方法并且还提高了互连可靠性和耐腐蚀性，并且由此形成了半导体器件。该方法包括在形成双镶嵌互连结构中使用渐变的还原氧Cu-Zn合金作为通孔的填充物。分级合金填充是通过电镀而形成的，而不同的电镀参数，Cu表面在独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂中，从而将分级填料电镀在Cu表面上; 并对电镀分级的Cu-Zn合金填料进行退火; 并且对Cu-Zn合金填充物进行平坦化，从而形成分级的还原氧双嵌入铜互连线。

3. 发明授权

US06624074B1 Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution 有权
标题翻译：使用化学溶液通过钙掺杂铜表面制造半导体器件的方法
公开(公告)号：US06624074B1
公开(公告)日：2003-09-23
申请号：US10218532
申请日：2002-08-13
申请人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
发明人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
IPC分类号： H01L2144
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device having contaminant-reduced Ca-doped Cu surfaces formed on Cu interconnects by cost-effectively depositing a Cu—Ca—X surface and subsequently removing the contaminant layer contained therein; and a device thereby formed. In the Cu—Ca—X surface, where contaminant X═C, S, and O, removal of the contaminant from such surface is achieved by (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Cu—Ca—X surface under vacuum onto the underlying Cu interconnect material to form a Cu—Ca film on Cu interconnect structure, thereby producing a uniform Cu—Ca film (i.e., Cu-rich with 0.2-5% Ca) on the Cu surface of an interconnect for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：通过成本有效地沉积Cu-Ca-X表面并随后除去其中包含的污染物层，制造在Cu互连上形成的具有污染减少的Ca掺杂的Cu表面的半导体器件的方法; 和由此形成的装置。在污染物X = C，S和O的Cu-Ca-X表面中，通过（a）将Cu互连表面浸入包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和用于促进Cu互连材料的Ca掺杂的至少一种表面活性剂; （b）将Cu-Ca-X表面在真空下退火到下面的Cu互连材料上，以在Cu互连结构上形成Cu-Ca膜，从而产生均匀的Cu-Ca膜（即富含Cu- 5％Ca）在铜互连的Cu表面，以最大限度地提高Ca-Cu / Cu互连结构的可靠性，抗电迁移和防腐蚀。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

4. 发明授权

US06621165B1 Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface 有权
标题翻译：通过在掺杂钙的铜表面中还原碳，硫和氧杂质制造的半导体器件
公开(公告)号：US06621165B1
公开(公告)日：2003-09-16
申请号：US10154871
申请日：2002-05-23
申请人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
发明人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
IPC分类号： H01L2348
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76838 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having contaminant-reduced calcium-copper (Ca—Cu) alloy surfaces formed on Cu interconnects fabricated by cost-effectively removing the contaminant layer. Contaminant removal from a Cu—Ca—X surface, where contaminant X═C, S, or O, is achieved by sputtering the Cu—Ca—X surface in an argon (Ar) atmosphere between the steps of (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Ca—Cu alloy surface onto the underlying Cu interconnect material to form a Ca—Cu/Cu interconnect structure, whereby the sputtering step, under Ar, selectively and effectively removes contaminants from the Cu—Ca—X layer containing higher concentrations of C, S, or O, thereby minimizing the post-annealed contaminant level, and thereby producing a uniform Ca—Cu alloy surface (i.e., Cu-rich with 0.2-5% Ca) on the Cu interconnect material for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：具有通过成本有效地去除污染物层而制造的Cu互连上形成污染物降低的钙 - 铜（Ca-Cu）合金表面的半导体器件。污染物X = C，S或O的Cu-Ca-X表面的污染物去除是通过在氩（Ar）气氛中溅射Cu-Ca-X表面，在（a）浸渍Cu 将互连表面连接成包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和至少一种用于促进Cu互连材料的Ca掺杂的表面活性剂的化学镀溶液; 和（b）将Ca-Cu合金表面退火到下面的Cu互连材料上以形成Ca-Cu / Cu互连结构，由此在Ar下的溅射步骤选择性且有效地从Cu-Ca-X层去除污染物含有较高浓度的C，S或O，从而使退火后的污染物水平最小化，从而在Cu互连材料上产生均匀的Ca-Cu合金表面（即，具有0.2-5％Ca的富含Cu的Cu），以使 Ca-Cu / Cu互连结构的可靠性，电迁移性和防腐蚀性。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

5. 发明授权

US06469387B1 Semiconductor device formed by calcium doping a copper surface using a chemical solution 失效
标题翻译：使用化学溶液通过钙掺杂铜表面形成的半导体器件
公开(公告)号：US06469387B1
公开(公告)日：2002-10-22
申请号：US09728314
申请日：2000-11-30
申请人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
发明人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
IPC分类号： H01L2348
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device having contaminant-reduced Ca-doped Cu surfaces formed on Cu interconnects by cost-effectively depositing a Cu—Ca—X surface and subsequently removing the contaminant layer contained therein; and a device thereby formed. In the Cu—Ca—X surface, where contaminant X=C, S, and O, removal of the contaminant from such surface is achieved by (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Cu—Ca—X surface under vacuum onto the underlying Cu interconnect material to form a Cu—Ca film on Cu interconnect structure, thereby producing a uniform Cu—Ca film (i.e., Cu-rich with 0.2-5% Ca) on the Cu surface of an interconnect for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：通过成本有效地沉积Cu-Ca-X表面并随后除去其中包含的污染物层，制造在Cu互连上形成的具有污染减少的Ca掺杂的Cu表面的半导体器件的方法; 和由此形成的装置。在污染物X = C，S和O的Cu-Ca-X表面中，通过（a）将Cu互连表面浸入包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和用于促进Cu互连材料的Ca掺杂的至少一种表面活性剂; （b）将Cu-Ca-X表面在真空下退火到下面的Cu互连材料上，以在Cu互连结构上形成Cu-Ca膜，从而产生均匀的Cu-Ca膜（即富含Cu- 5％Ca）在铜互连的Cu表面，以最大限度地提高Ca-Cu / Cu互连结构的可靠性，抗电迁移和防腐蚀。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

6. 发明授权

US06444580B1 Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed 有权
标题翻译：由此形成的钙掺杂铜表面和半导体器件中的碳，硫和氧杂质的还原方法
公开(公告)号：US06444580B1
公开(公告)日：2002-09-03
申请号：US09728312
申请日：2000-11-30
申请人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
发明人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
IPC分类号： H01L2144
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76838 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device having contaminant-reduced calcium-copper (Ca—Cu) alloy surfaces formed on Cu interconnects by cost-effectively removing the contaminant layer and a device thereby formed. Contaminant removal from a Cu—Ca—X surface, where contaminant X=C, S, or O, is achieved by sputtering the Cu—Ca—X surface in an argon (Ar) atmosphere between the steps of (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Ca—Cu alloy surface onto the underlying Cu interconnect material to form a Ca—Cu/Cu interconnect structure, whereby the sputtering step, under Ar, selectively and effectively removes contaminants from the Cu—Ca—X layer containing higher concentrations of C, S, or O, thereby minimizing the post-annealed contaminant level, and thereby producing a uniform Ca—Cu alloy surface (i.e., Cu-rich with 0.2-5% Ca) on the Cu interconnect material for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：通过成本有效地去除污染物层和由此形成的器件，制造在Cu互连上形成的具有污染物降低的钙 - 铜（Ca-Cu）合金表面的半导体器件的方法。污染物X = C，S或O的Cu-Ca-X表面的污染物去除是通过在氩（Ar）气氛中溅射Cu-Ca-X表面，在（a）浸渍Cu 将互连表面连接成包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和至少一种用于促进Cu互连材料的Ca掺杂的表面活性剂的化学镀溶液; 和（b）将Ca-Cu合金表面退火到下面的Cu互连材料上以形成Ca-Cu / Cu互连结构，由此在Ar下的溅射步骤选择性且有效地从Cu-Ca-X层去除污染物含有较高浓度的C，S或O，从而使退火后的污染物水平最小化，从而在Cu互连材料上产生均匀的Ca-Cu合金表面（即，具有0.2-5％Ca的富含Cu的Cu），以使 Ca-Cu / Cu互连结构的可靠性，电迁移性和防腐蚀性。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

7. 发明授权

US06515368B1 Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper 有权
标题翻译：具有铜填充通孔的半导体器件包括用于减少铜的电迁移的铜 - 锌/合金膜
公开(公告)号：US06515368B1
公开(公告)日：2003-02-04
申请号：US10016410
申请日：2001-12-07
申请人： Sergey Lopatin , Alexander H. Nickel
发明人： Sergey Lopatin , Alexander H. Nickel
IPC分类号： H01L23532
CPC分类号： H01L21/76843 , H01L21/2885 , H01L21/76846 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method of reducing electromigration in copper interconnect lines by restricting Cu-diffusion pathways along a Cu surface via doping the Cu surface with Zn from an interim copper-zinc alloy (Cu—Zn) thin film electroplated on the copper (Cu) surface from a stable chemical solution, and controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using interim reduced-oxygen Cu—Zn alloy thin films for forming an encapsulated dual-inlaid interconnect structure. The films are formed by electroplating a Cu surface via by electroplating, the Cu surface in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin films and a Cu-fill; and planarizing the interconnect structure.
摘要翻译：一种通过在铜（Cu）表面上电镀铜离子铜（Cu）的中间铜 - 锌合金（Cu-Zn）薄膜上，通过用Zn掺杂Cu表面来限制沿Cu表面的Cu扩散路径来减少铜互连线中的电迁移的方法稳定的化学溶液，并且控制其Zn掺杂，这也提高了互连可靠性和耐腐蚀性，以及由此形成的半导体器件。该方法包括使用临时还原氧Cu-Zn合金薄膜来形成封装的双镶嵌互连结构。通过电镀电镀Cu表面，通过电镀Cu晶体，以独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂形成Cu表面; 并对中间电镀Cu-Zn合金薄膜和Cu填充进行退火; 并平坦化互连结构。

8. 发明授权

US06528424B1 Method of electroplating a copper-zinc alloy thin film on a copper surface using a chemical solution 有权
标题翻译：使用化学溶液在铜表面上电镀铜锌合金薄膜的方法
公开(公告)号：US06528424B1
公开(公告)日：2003-03-04
申请号：US10082432
申请日：2002-02-22
申请人： Sergey Lopatin , Alexander H. Nickel
发明人： Sergey Lopatin , Alexander H. Nickel
IPC分类号： H01L2144
CPC分类号： H01L21/7685 , C25D3/58 , C25D5/18 , C25D7/12 , C25D17/001 , H01L21/2885
摘要： A method of fabricating a semiconductor device, having a Cu-rich Cu—Zn alloy thin film (30) formed on a cathode-wafer such as a Cu surface (20) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants; and a semiconductor device thereby formed. The method controls the parameters of pH, temperature, and time in order to form a uniform Cu-rich Cu—Zn alloy thin film (30) for reducing electromigration on the cathode-wafer by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate, for improving device reliability, and for increasing corrosion resistance.
摘要翻译：一种制造半导体器件的方法，所述半导体器件具有通过使用电镀设备在所述Cu表面（20）的阴极晶片（20）上形成的富Cu Cu-Zn合金薄膜（30），所述Cu表面（20）在含有锌（Zn）和铜（Cu）的盐，其络合剂，pH调节剂和表面活性剂的独特的化学溶液中; 并由此形成半导体器件。该方法控制pH，温度和时间的参数，以形成均匀的富Cu Cu-Zn合金薄膜（30），用于通过降低其中的漂移速度来减小阴极晶片上的电迁移，从而降低Cu迁移率除了降低空隙形成速率，提高装置的可靠性和提高耐腐蚀性之外，

9. 发明授权

US06936925B1 Semiconductor device having copper lines with reduced electromigration using an electroplated interim copper-zinc alloy film on a copper surface 失效
标题翻译：具有在铜表面上使用电镀的中间铜 - 锌合金膜的具有减少的电迁移的铜线的半导体器件
公开(公告)号：US06936925B1
公开(公告)日：2005-08-30
申请号：US10626371
申请日：2003-07-23
申请人： Sergey Lopatin , Alexander H. Nickel
发明人： Sergey Lopatin , Alexander H. Nickel
IPC分类号： C25D3/58 , C25D5/18 , C25D7/12 , H01L21/288 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76846 , C25D3/58 , C25D5/18 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L2221/1089
摘要： The present invention relates to the semiconductor device fabrication industry. More particularly a semiconductor device, having an interim reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a blanket Cu surface (20) disposed in a via (6) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin film (30); filling the via (6) with further Cu (26); annealing and planarizing the interconnect structure (35). The reduction of electromigration in copper interconnect lines (35) is achieved by decreasing the drift velocity in the copper line (35)/via (6), thereby decreasing the copper migration rate as well as the void formation rate, by using an interim conformal Cu-rich Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) from a stable chemical solution, and by controlling the Zn-doping thereof, which improves also interconnect reliability and corrosion resistance.
摘要翻译：本发明涉及半导体器件制造业。更具体地说，一种半导体器件，具有通过使用电镀设备电镀Cu，Cu表面（20）上电镀在布置在通孔（6）上的铜箔表面（20）上的临时还原氧Cu-Zn合金薄膜（30））在一种独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂; 并对中间电镀Cu-Zn合金薄膜进行退火; 用另外的Cu（26）填充通孔（6）; 退火和平坦化互连结构（35）。通过降低铜线（35）/通孔（6）中的漂移速度，可以实现铜互连线（35）中电迁移的减少，从而通过使用中间保形来降低铜迁移率以及空隙形成速率从稳定的化学溶液电镀在Cu表面（20）上的富Cu Cu-Zn合金薄膜（30），并且通过控制其Zn掺杂，这也提高了互连可靠性和耐腐蚀性。

10. 发明授权

US06660633B1 Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formed 有权
标题翻译：通过在铜表面上电镀临时铜 - 锌合金薄膜和由此形成的半导体器件来减少铜线中的电迁移的方法
公开(公告)号：US06660633B1
公开(公告)日：2003-12-09
申请号：US10083809
申请日：2002-02-26
申请人： Sergey Lopatin , Alexander H. Nickel
发明人： Sergey Lopatin , Alexander H. Nickel
IPC分类号： H01L2144
CPC分类号： H01L21/76846 , C25D3/58 , C25D5/18 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L2221/1089
摘要： A method of fabricating a semiconductor device, having an interim reduced-oxygen Cu-Zn alloy thin film (30) electroplated on a blanket Cu surface (20) disposed in a via (6) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin film (30); filling the via (6) with further Cu (26); annealing and planarizing the interconnect structure (35); and a semiconductor device thereby formed. The reduction of electromigration in copper interconnect lines (35) is achieved by decreasing the drift velocity in the copper line (35)/via (6), thereby decreasing the copper migration rate as well as the void formation rate, by using an interim conformal Cu-rich Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) from a stable chemical solution, and by controlling the Zn-doping thereof, which improves also interconnect reliability and corrosion resistance.
摘要翻译：一种制造半导体器件的方法，其具有通过使用电镀设备通过电镀设置在通孔（6）中的铜箔表面（20）上电镀的临时还原氧Cu-Zn合金薄膜，所述Cu表面（20）在独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂; 并对中间电镀Cu-Zn合金薄膜进行退火; 用另外的Cu（26）填充通孔（6）; 退火和平坦化互连结构（35）; 并由此形成半导体器件。通过降低铜线（35）/通孔（6）中的漂移速度，可以实现铜互连线（35）中电迁移的减少，从而通过使用中间保形来降低铜迁移率以及空隙形成速率从稳定的化学溶液电镀在Cu表面（20）上的富Cu Cu-Zn合金薄膜（30），并且通过控制其Zn掺杂，这也提高了互连可靠性和耐腐蚀性。

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