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    • 4. 发明申请
    • ORGANIC FIELD-EFFECT TRANSISTOR FOR SENSING APPLICATIONS
    • 用于传感应用的有机场效应晶体管
    • US20090267057A1
    • 2009-10-29
    • US12302045
    • 2007-05-10
    • Sepas SetayeshDagobert Michel De Leeuw
    • Sepas SetayeshDagobert Michel De Leeuw
    • H01L51/30H01L29/786H01L51/10
    • G01N27/414H01L51/0545
    • Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.
    • 场效应晶体管,包括栅电极层,第一介电层,源电极,漏电极,有机半导体和第二电介质层,其中第一介电层位于栅电极层上,源极, 漏电极和有机半导体位于第一电介质层的上方,源极和漏电极与有机半导体接触,其中第二介电层被放置在源电极,漏电极和有机半导体的组装上,其中 在场效应晶体管的操作期间,包括栅极电极层和第一介电层的组件的电容低于第二介电层的电容。 此外,公开了一种包括这种场效应晶体管的传感器系统和用于检测分子的传感器系统的使用。