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1. 发明授权

US5741613A Methods of forming half-tone phase-shift masks with reduced susceptiblity to parasitic sputtering 失效
标题翻译：形成对寄生溅射具有降低的敏感性的半色调相移掩模的方法
公开(公告)号：US5741613A
公开(公告)日：1998-04-21
申请号：US713953
申请日：1996-09-13
申请人： Seong-yong Moon , Jong-wook Kye , Sung-gi Kim , Sung-chul Lim , In-kyun Shin
发明人： Seong-yong Moon , Jong-wook Kye , Sung-gi Kim , Sung-chul Lim , In-kyun Shin
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： Methods of forming half-tone phase-shift masks include the steps of forming a series of layers on a face of a transparent substrate such as quartz. These layers include a phase-shift layer of MoSiON, a layer of opaque material (e.g., chrome) for blocking light on the phase-shift layer and a photoresist layer on the layer of opaque material. The photoresist layer is then patterned to define a mask having openings therein which expose the layer of opaque material. The layer of opaque material is then patterned using a wet etchant, to expose portions of the phase-shift layer. The patterned photoresist layer is then stripped and a cleaning step is then performed to remove residual defects and marks from the patterned layer of opaque material. The patterned layer of opaque material is then used as a mask during the step of anisotropically dry etching the phase-shift layer using a gas containing CF.sub.4 and O.sub.2, but not CHF.sub.3. The use of a gas containing CF.sub.4 and O.sub.2 inhibits parasitic sputtering of chrome from the patterned layer of opaque material onto the exposed portions of the face of the transparent substrate, during the dry etching step. In contrast, the use of a gas containing CHF.sub.3 and O.sub.2 during dry etching of the phase-shift layer may cause the formation of parasitic defects containing chrome on the face of the transparent substrate. These parasitic defects typically cause a reduction in yield when the phase-shift mask is used in the formation of integrated circuits.
摘要翻译：形成半色调相移掩模的方法包括在诸如石英的透明基板的表面上形成一系列层的步骤。这些层包括MoSiON的相移层，用于阻挡相移层上的光的不透明材料层（例如，铬）和不透明材料层上的光致抗蚀剂层。然后将光致抗蚀剂层图案化以限定其中具有开口的掩模，其暴露不透明材料层。然后使用湿蚀刻剂将不透明材料层图案化，以暴露部分相移层。然后剥离图案化的光致抗蚀剂层，然后执行清洁步骤以从不透明材料的图案化层去除残留的缺陷和痕迹。然后在使用含有CF4和O2而不是CHF3的气体进行各向异性干蚀刻相移层的步骤期间，将不透明材料的图案化层用作掩模。在干蚀刻步骤期间，使用含有CF 4和O 2的气体抑制铬从不透明材料的图案化层的阳极溅射到透明基板的表面的暴露部分上。相反，在相移层的干蚀刻期间使用含有CHF 3和O 2的气体可能导致在透明基底的表面上形成含有铬的寄生缺陷。当在形成集成电路中使用相移掩模时，这些寄生缺陷通常导致产量的降低。

2. 发明授权

US5853921A Methods of fabricating phase shift masks by controlling exposure doses 失效
标题翻译：通过控制暴露剂量制造相移掩模的方法
公开(公告)号：US5853921A
公开(公告)日：1998-12-29
申请号：US905792
申请日：1997-07-28
申请人： Seong-yong Moon , In-kyun Shin , Ho-young Kang
发明人： Seong-yong Moon , In-kyun Shin , Ho-young Kang
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： A phase shift mask is fabricated by forming a radiation blocking layer on a phase shift mask substrate and forming a photoresist layer on the radiation blocking layer. First portions of the photoresist layer are exposed at a first exposure dose. Second portions of the photoresist layer are exposed at a second exposure dose that is greater than the first exposure dose, such that the second portions of the photoresist layer are wider than the first portions of the photoresist layer. The radiation blocking layer is etched using the photoresist layer as an etch mask, to thereby produce first apertures in the radiation blocking layer beneath the first portions of the photoresist layer and second apertures in the radiation blocking layer which are wider than the first apertures, beneath the second portions of the photoresist layer. The phase shift mask substrate is then etched beneath the second apertures. The first and second exposures are preferably performed by exposing the photoresist layer to electron beams of first and second exposure doses. The first and second portions of the photoresist layer may be overlapping or nonoverlapping. The first and second exposure doses may be multiple exposure doses which cumulatively provide the first and second exposure doses.
摘要翻译：通过在相移掩模基板上形成辐射阻挡层并在辐射阻挡层上形成光致抗蚀剂层来制造相移掩模。光致抗蚀剂层的第一部分以第一曝光剂量曝光。光致抗蚀剂层的第二部分以比第一曝光剂量大的第二曝光剂量曝光，使得光致抗蚀剂层的第二部分比光致抗蚀剂层的第一部分宽。使用光致抗蚀剂层作为蚀刻掩模蚀刻辐射阻挡层，从而在光致抗蚀剂层的第一部分下方的辐射阻挡层和辐射阻挡层中的第二孔之下产生比第一孔更宽的第一孔，下面光致抗蚀剂层的第二部分。然后在第二孔下方蚀刻相移掩模衬底。第一和第二曝光优选通过将光致抗蚀剂层暴露于第一和第二曝光剂量的电子束来进行。光致抗蚀剂层的第一和第二部分可以是重叠的或不重叠的。第一和第二暴露剂量可以是累积提供第一和第二暴露剂量的多次暴露剂量。

3. 发明申请

US20050123839A1 Photo mask capable of improving resolution by utilizing polarization of light and method of manufacturing the same 有权
标题翻译：能够通过利用光的偏振改善分辨率的光掩模及其制造方法
公开(公告)号：US20050123839A1
公开(公告)日：2005-06-09
申请号：US10942047
申请日：2004-09-16
申请人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
发明人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
IPC分类号： H01L21/027 , G03F1/14 , G03F9/00 , G21K5/00
CPC分类号： G03F1/38 , G03F1/50
摘要： A photo mask enhances the resolution of a photolithography process by polarizing the exposure light. The photo mask includes a transparent substrate made of quartz, a reflection pattern disposed on the transparent substrate, and a light-blocking pattern disposed on the reflection pattern. The external reflection pattern defines a light-transmitting area by exposing portions of the transparent substrate. The light-blocking pattern has the same size and shape as the external reflection pattern.
摘要翻译：光掩模通过偏振曝光光增强了光刻工艺的分辨率。光掩模包括由石英制成的透明基板，设置在透明基板上的反射图案和设置在反射图案上的遮光图案。外部反射图案通过暴露透明基板的部分来限定透光区域。遮光图案具有与外部反射图案相同的尺寸和形状。

4. 发明授权

US5814424A Half tone phase shift masks with staircase regions and methods of fabricating the same 失效
标题翻译：具有阶梯区域的半色调相移掩模及其制造方法
公开(公告)号：US5814424A
公开(公告)日：1998-09-29
申请号：US869559
申请日：1997-06-05
申请人： In-kyun Shin
发明人： In-kyun Shin
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/29 , G03F1/32
摘要： A phase shift mask includes a phase shift region and an unshifted phase region in spaced apart relation on a phase shift mask substrate, and a half tone region on the unshifted phase region. The half tone region changes the phase of radiation incident thereon. The half tone region preferably defines a staircase region which causes destructive interference of incident radiation which can thereby reduce the critical distance difference between patterns formed with the phase shift region and the unshifted phase region. The phase shift mask may be fabricated by forming a phase shift layer on a phase shift mask substrate and forming a patterned chrome layer on the phase shift layer which exposes a first portion and a second portion of the phase shift layer. A phase shift region is formed in the first portion of the phase shift layer and a half tone region and an unshifted phase region are formed in the second portion of the phase shift layer.
摘要翻译：相移掩模包括在相移掩模衬底上的间隔关系中的相移区域和非移相相位区域，以及未移相区域上的半色调区域。半色调区域改变入射在其上的辐射的相位。半色调区域优选地限定了引起入射辐射的破坏性干扰的阶梯区域，从而可以减小由相移区域和未移相区域形成的图案之间的临界距离差。可以通过在相移掩模衬底上形成相移层并在相移层上形成图案化的铬层来制造相移掩模，所述相移层暴露相移层的第一部分和第二部分。在相移层的第一部分中形成相移区域，并且在相移层的第二部分中形成半色调区域和未移相区域。

5. 发明授权

US06919149B2 Wave guided alternating phase shift mask and fabrication method thereof 失效
标题翻译：波导交替相移掩模及其制造方法
公开(公告)号：US06919149B2
公开(公告)日：2005-07-19
申请号：US10414217
申请日：2003-04-16
申请人： Seong-hyuck Kim , Tae-moon Jeong , In-kyun Shin
发明人： Seong-hyuck Kim , Tae-moon Jeong , In-kyun Shin
IPC分类号： G02B5/18 , G03F1/30 , G03F1/68 , H01L21/027 , G01F9/00
CPC分类号： G03F1/30
摘要： A wave guided alternating phase shift mask (WGAPSM) includes a substrate transparent to light from an exposure light source and a waveguide pattern formed on the substrate to define a plurality of transparent regions that are regularly arranged. The transparent regions defined by the waveguide pattern include a plurality of shift transparent regions formed of recess regions of the substrate and a plurality of non-shift transparent regions alternatively arranged with the shift transparent regions. The provided WGAPSM minimizes an error of critical dimension difference and an X-effect while securing a large process margin and not generating opaque defects. A fabricating method for the provided WGAPSM is also provided.
摘要翻译：波导交替相移掩模（WGAPSM）包括对来自曝光光源的光透明的基板和形成在基板上的波导图案，以限定规则排列的多个透明区域。由波导图案限定的透明区域包括由基板的凹部区域形成的多个偏移透明区域和交替布置有偏移透明区域的多个非透明区域。提供的WGAPSM最大限度地减少临界尺寸差异和X效应，同时确保大的工艺裕度，并且不产生不透明缺陷。还提供了所提供的WGAPSM的制造方法。

6. 发明申请

US20050123845A1 Method of adjusting deviation of critical dimension of patterns 审中-公开
标题翻译：调整模式临界尺寸偏差的方法
公开(公告)号：US20050123845A1
公开(公告)日：2005-06-09
申请号：US11030435
申请日：2005-01-07
申请人： Sung-min Huh , Sung-hyuck Kim , In-kyun Shin
发明人： Sung-min Huh , Sung-hyuck Kim , In-kyun Shin
IPC分类号： G03C5/00 , G03F1/36 , G03F1/60 , G03F1/68 , G03F1/80 , G03F7/00 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , H01L23/544
CPC分类号： G03F7/70625 , G03F7/70433 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method of adjusting a deviation of a critical dimension of patterns formed by a photolithography process is disclosed. The method comprises measuring the deviation of the critical dimension of patterns formed by the photolithography process and then forming a recess, an undercut, or an isotropic groove in a photomask. The recess, undercut, or isotropic groove is formed to have dimensions corresponding to the amount of deviation of the critical dimension in the patterns. The dimensions of the recess, undercut, or isotropic groove are generally smaller than a wavelength λ of an exposure source used in the photolithography process.
摘要翻译：公开了一种调整由光刻工艺形成的图案的临界尺寸偏差的方法。该方法包括测量由光刻工艺形成的图案的临界尺寸的偏差，然后在光掩模中形成凹槽，底切或各向同性凹槽。凹槽，底切或各向同性沟槽形成为具有与图案中的临界尺寸的偏差量相对应的尺寸。凹槽，底切或各向同性沟槽的尺寸通常小于在光刻工艺中使用的曝光源的波长λ。

7. 发明申请

US20150362834A1 EXPOSURE METHODS USING E-BEAMS AND METHODS OF MANUFACTURING MASKS AND SEMICONDUCTOR DEVICES THEREFROM 有权
标题翻译：使用电子束的曝光方法及其制造方法及其半导体器件
公开(公告)号：US20150362834A1
公开(公告)日：2015-12-17
申请号：US14693429
申请日：2015-04-22
申请人： Jin Choi , In-kyun Shin , Byoung-sup Ahn , Sang-hee Lee
发明人： Jin Choi , In-kyun Shin , Byoung-sup Ahn , Sang-hee Lee
IPC分类号： G03F1/78 , G03F1/36 , G06F17/50
CPC分类号： G03F1/78 , G03F1/36
摘要： Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.
摘要翻译：公开了一种曝光方法和制造掩模的方法和使用该方法的半导体器件，其最小化掩模数据准备（MDP）所需的时间以优化总曝光过程并通过使用逆解决方案来提高图案的质量，基于多光束掩模写入器。曝光方法包括接收通过光学邻近校正（OPC）获得的掩模带输出（MTO）设计数据，为MTO设计数据准备掩模数据，包括作业板，而不进行数据格式转换，执行复杂校正，包括邻近效应校正（PEC）由电子束邻近效应引起的误差和由曝光处理引起的误差的掩模处理校正（MPC）对掩模数据，基于执行复数校正的数据产生像素数据，以及基于所述像素数据在掩模用基板上进行电子束写入。

8. 发明授权

US09671686B2 Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom 有权
公开(公告)号：US09671686B2
公开(公告)日：2017-06-06
申请号：US14693429
申请日：2015-04-22
申请人： Jin Choi , In-kyun Shin , Byoung-sup Ahn , Sang-hee Lee
发明人： Jin Choi , In-kyun Shin , Byoung-sup Ahn , Sang-hee Lee
IPC分类号： G03F1/78 , G03F1/36
CPC分类号： G03F1/78 , G03F1/36
摘要： Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.

9. 发明授权

US07432022B2 Photo mask capable of improving resolution by utilizing polarization of light and method of manufacturing the same 有权
标题翻译：能够通过利用光的偏振改善分辨率的光掩模及其制造方法
公开(公告)号：US07432022B2
公开(公告)日：2008-10-07
申请号：US10942047
申请日：2004-09-16
申请人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
发明人： Sung-hyuck Kim , In-kyun Shin , Gi-sung Yoon
IPC分类号： G03F1/00
CPC分类号： G03F1/38 , G03F1/50
摘要： A photo mask enhances the resolution of a photolithography process by polarizing the exposure light. The photo mask includes a transparent substrate made of quartz, a reflection pattern disposed on the transparent substrate, and a light-blocking pattern disposed on the reflection pattern. The external reflection pattern defines a light-transmitting area by exposing portions of the transparent substrate. The light-blocking pattern has the same size and shape as the external reflection pattern.
摘要翻译：光掩模通过偏振曝光光增强了光刻工艺的分辨率。光掩模包括由石英制成的透明基板，设置在透明基板上的反射图案和设置在反射图案上的遮光图案。外部反射图案通过暴露透明基板的部分来限定透光区域。遮光图案具有与外部反射图案相同的尺寸和形状。

10. 发明申请

US20060019176A1 Chromeless phase shift mask and method of fabricating the same 审中-公开
标题翻译：无色相移掩模及其制造方法
公开(公告)号：US20060019176A1
公开(公告)日：2006-01-26
申请号：US11067338
申请日：2005-02-28
申请人： Sung-hyuck Kim , In-kyun Shin
发明人： Sung-hyuck Kim , In-kyun Shin
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/34 , G03F1/28
摘要： A chromeless phase shift mask (PSM) can be used in a single exposure process to produce a pattern whose features have different after development inspection critical dimensions (ADI CDs). The chromeless PSM includes a mask and a plurality of phase shifters constituted by recesses in the mask substrate. The recesses have different depths so that the phase shifters will produce different phase differences in the exposure light transmitted by the mask. The recesses are formed by etching the mask substrate. The mask substrate is initially etched to form a first set of the recesses. Some of these recesses are left as is to constitute the first phase shifters. The substrate is then further etched at the location of at least another of the first recesses to form the second phase shifter(s).
摘要翻译：无色相移掩模（PSM）可以在单次曝光过程中使用，以产生其特征在开发后检验关键尺寸（ADI CD）上具有不同的图案。无铬PSM包括掩模和由掩模基板中的凹部构成的多个移相器。凹槽具有不同的深度，使得移相器将在由掩模透射的曝光光中产生不同的相位差。通过蚀刻掩模基板形成凹部。最初蚀刻掩模基底以形成第一组凹陷。这些凹部中的一些被遗弃以构成第一移相器。然后在至少另一个第一凹部的位置处进一步蚀刻衬底以形成第二移相器。

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