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1. 发明授权

US06573139B2 Method of fabricating cell of flash memory device 失效
公开(公告)号：US06573139B2
公开(公告)日：2003-06-03
申请号：US09903977
申请日：2001-07-12
申请人： Seong-soo Lee , Joon Kim , Kang-ill Seo
发明人： Seong-soo Lee , Joon Kim , Kang-ill Seo
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L27/115
摘要： A method of forming a floating gate electrode of a cell of a flash memory device having an interval less than a critical dimension (CD) in a conventional photolithographic process, in which the reliability of a dielectric layer does not deteriorate and damage to a floating gate electrode during etching is prevented, is provided. According to the present invention, a protective layer formed of a material having a high etching selectivity with respect to a device isolation layer and a doped polysilicon layer is formed on the upper surface of the doped polysilicon layer forming the floating gate electrode. The protective layer is partially etched and includes a recess. Next, a material layer for forming a spacer, which is formed of a material having a high etching selectivity with respect to the device isolation layer and the doped polysilicon layer, is formed on the upper surface of the protective layer and is etched back, thus forming the spacer. Damage to the doped polysilicon layer during etching is prevented by the protective layer containing the recess. The floating gate electrode, which is arranged at an interval less than a limit value in a photolithographic process, can be formed by the spacer. The spacer and the protective layer are removed, and a step difference does not occur at edges of the floating gate electrode. Thus deterioration of the reliability of a dielectric layer formed on top of the floating gate electrode can be prevented.

2. 发明授权

US07682450B2 Stacked semiconductor device and related method 有权
标题翻译：叠层半导体器件及相关方法
公开(公告)号：US07682450B2
公开(公告)日：2010-03-23
申请号：US11485323
申请日：2006-07-13
申请人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
发明人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
IPC分类号： C30B21/02
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/76879 , H01L21/76898 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.
摘要翻译：公开了一种叠层半导体器件及其制造方法。堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅，以及填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部，并且上部部分与基板成锥形。层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

3. 发明申请

US20070265038A1 Notification System And The Method Of Mobile Phone Call Arrival Using Sound Communication 审中-公开
标题翻译：通知系统和使用声音通信的手机通话方式
公开(公告)号：US20070265038A1
公开(公告)日：2007-11-15
申请号：US11742851
申请日：2007-05-01
申请人： Joon Kim
发明人： Joon Kim
IPC分类号： H04B1/38
CPC分类号： H04M19/041 , H04M1/7253
摘要： Disclosed is an incoming call notifying system for notifying a user of an incoming call of a mobile terminal. The incoming call notifying system comprises: a mobile terminal including a speaker configured to output a sound wave and a controller configured to control so as to output a sound wave signal of a predetermined frequency to the speaker in the incoming call; and an incoming call notifying apparatus including a microphone configured to receive a surrounding sound wave, a processor configured to analyze the sound wave received from the microphone, determine whether the received sound wave is the sound wave signal sent from the speaker of the mobile terminal, and if so, send a command a to notifying means.
摘要翻译：公开了一种来电通知系统，用于通知用户移动终端的来电。来电通知系统包括：移动终端，包括被配置为输出声波的扬声器;以及控制器，被配置为控制以便在来电中向扬声器输出预定频率的声波信号; 以及包括被配置为接收周围声波的麦克风的来电通知装置，被配置为分析从麦克风接收的声波的处理器，确定接收的声波是否是从移动终端的扬声器发送的声波信号，如果是这样，发送命令a到通知手段。

4. 发明申请

US20060102101A1 Electronic fence capable of guiding animals to return 失效
标题翻译：电子围栏能够引导动物返回
公开(公告)号：US20060102101A1
公开(公告)日：2006-05-18
申请号：US11261043
申请日：2005-10-28
申请人： Joon Kim
发明人： Joon Kim
IPC分类号： A01K15/02
CPC分类号： A01K15/023
摘要： An electronic fence system capable of guiding animals under training to return to a predetermined restricted area. The electronic fence generates electric shocks as the animals attempt to leave the predetermined restricted area and restrains the electrical shock when the animals return to the predetermined restricted area. The electronic fence includes a transmitter and a receiver. The transmitter transmits RF signals having a plurality of control signals such that different shock levels are generated responsive to the location of the animals within the predetermined restricted area. The receiver sets a shock wave level, selectively controls the generation of the electric shock and a high-frequency beep, automatically restrains the generation of the electric shock when an escaped animal returns to the predetermined restricted area, and generates an audible alarm and turns lamps on and off to indicate the location of the animal when it escapes from the predefined restricted area.
摘要翻译：一种能够引导被训练的动物回到预定限制区域的电子围栏系统。当动物返回到预定的限制区域时，电子围栏会产生电击，因为动物试图离开预定的限制区域并抑制电击。电子围栏包括发射机和接收机。发射机发送具有多个控制信号的RF信号，使得响应于动物在预定限制区域内的位置而产生不同的震动电平。接收器设置冲击波电平，选择性地控制电击的产生和高频蜂鸣，当逃脱的动物返回到预定的限制区域时，自动抑制电击的产生，并且产生可听见的警报并转动灯开启和关闭以指示当动物从预定义的限制区域逃逸时的位置。

5. 发明授权

US06232696B1 Vacuum generating apparatus with multiple rotors 失效
标题翻译：具有多个转子的真空发生装置
公开(公告)号：US06232696B1
公开(公告)日：2001-05-15
申请号：US09358813
申请日：1999-07-23
申请人： Byung Kyu Kim , Joon Kim
发明人： Byung Kyu Kim , Joon Kim
IPC分类号： H02K1600
CPC分类号： F04D25/0653 , F04D25/166 , F04D29/441 , H02K7/14 , H02K21/24
摘要： A vacuum generating apparatus for a vacuum cleaner is provided, in which an axial type coreless brushless direct-current (DC) motor is implemented in the form of a rotor-impeller integration structure. The vacuum generating apparatus includes an axial type brushless DC motor in which disc-shaped upper and lower rotors are symmetrically disposed facing the upper and lower portions of a disc-shaped stator at either end of a rotating shaft rotatably supported in the inner circumferential portion of the stator, upper and lower impellers integrally fixed in the upper and lower rotors, respectively, and upper and lower housings whose outer circumferential portions are combined with the outer circumferential portions of the respective disc-shaped stator such that air sucked via sucking inlets formed at the center of the housings is guided to a discharging outlet together with the stator. A single rotor structure can also be adopted.
摘要翻译：提供一种用于真空吸尘器的真空发生装置，其中轴向型无芯无刷直流（DC）电动机以转子 - 叶轮一体化结构的形式实现。真空发生装置包括轴向型无刷直流电动机，其中盘形的上下转子对称地设置在与可旋转地支撑在旋转轴的内周部分的旋转轴的任一端面对的盘形定子的上部和下部分别一体地固定在上下转子中的定子，上下叶轮和外周部与各圆盘状定子的外周部组合的上下壳体，使得通过吸入口吸入的空气形成在壳体的中心与定子一起被引导到排出口。也可采用单转子结构。

6. 发明授权

US09349821B2 Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure 有权
公开(公告)号：US09349821B2
公开(公告)日：2016-05-24
申请号：US14940785
申请日：2015-11-13
申请人： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
发明人： Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC分类号： H01L21/311 , H01L21/28 , H01L29/49 , H01L27/092 , H01L27/108 , H01L29/423
CPC分类号： H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
摘要： An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.

7. 发明授权

US08419853B2 Stacked semiconductor device and related method 有权
标题翻译：叠层半导体器件及相关方法
公开(公告)号：US08419853B2
公开(公告)日：2013-04-16
申请号：US12623515
申请日：2009-11-23
申请人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
发明人： Yun-Seung Kang , Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang
IPC分类号： C30B21/04
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/76879 , H01L21/76898 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A stacked semiconductor device and a method for fabricating the stacked semiconductor device are disclosed. The stacked semiconductor device includes a first insulating interlayer having an opening that partially exposes a substrate, wherein the substrate includes single crystalline silicon, and a first seed pattern that fills the opening, wherein the first seed pattern has an upper portion disposed over the opening, and the upper portion is tapered away from the substrate. The stacked semiconductor device further includes a second insulating interlayer formed on the first insulating interlayer, wherein a trench that exposes the upper portion of the first seed pattern penetrates the second insulating interlayer, and a first single crystalline silicon structure that fills the trench.
摘要翻译：公开了一种叠层半导体器件及其制造方法。堆叠半导体器件包括具有部分地暴露衬底的开口的第一绝缘中间层，其中衬底包括单晶硅和填充开口的第一种子图案，其中第一种子图案具有设置在开口上方的上部，并且上部部分与基板成锥形。层叠半导体器件还包括形成在第一绝缘中间层上的第二绝缘中间层，其中暴露第一种子图案的上部的沟槽穿透第二绝缘夹层，以及填充沟槽的第一单晶硅结构。

8. 发明授权

US07585757B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07585757B2
公开(公告)日：2009-09-08
申请号：US11446151
申请日：2006-06-05
申请人： Jong-Seon Ahn , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Eun-Kuk Chung , Hyung-Mo Yang , Chang-Yeon Yoo , Yun-Seung Kang , Kyung-Tae Jang
发明人： Jong-Seon Ahn , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Eun-Kuk Chung , Hyung-Mo Yang , Chang-Yeon Yoo , Yun-Seung Kang , Kyung-Tae Jang
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L23/53271 , H01L21/76802 , H01L21/76816 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.
摘要翻译：在制造半导体器件的半导体器件和方法中，在绝缘层上形成防穿透膜图案和沟道膜图案。穿透防止图案和绝缘层可以分别包括氮化物和氧化物。穿透防止图案位于通道图案下方。

9. 发明申请

US20080087933A1 Semiconductor memory device and method of manufacturing the same 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080087933A1
公开(公告)日：2008-04-17
申请号：US11905035
申请日：2007-09-27
申请人： Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Jong-Seon Ahn
发明人： Eun-Kuk Chung , Joon Kim , Jin-Hong Kim , Suk-Chul Bang , Jong-Seon Ahn
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/11 , B82Y10/00 , H01L27/10873 , H01L27/10879 , H01L29/66795 , H01L29/785
摘要： Example embodiments relate to a semiconductor memory device including a channel layer pattern on a substrate, the channel layer pattern having a sidewall and an upper face, a spacer on the sidewall of the channel layer pattern, and a gate electrode covering the sidewall of the channel layer pattern, the spacer and the upper face of the channel layer pattern.
摘要翻译：示例性实施例涉及包括衬底上的沟道层图案，沟道层图案具有侧壁和上表面的半导体存储器件，沟道层图案的侧壁上的间隔物，以及覆盖沟道侧壁的栅电极层图案，间隔物和沟道层图案的上表面。

10. 发明申请

US20070055998A1 Digital living network alliance system for providing data service of digital broadcast and method for processing data service 审中-公开
标题翻译：数字生活网络联盟系统，用于提供数字广播的数据服务和处理数据业务的方法
公开(公告)号：US20070055998A1
公开(公告)日：2007-03-08
申请号：US11516215
申请日：2006-09-06
申请人： Seung-Mi Kang , Ho-Chul Shin , Woo-Jun Choi , Young-Kyu Bae , Chul-Seung Kim , Young-Seop Han , Joon Kim
发明人： Seung-Mi Kang , Ho-Chul Shin , Woo-Jun Choi , Young-Kyu Bae , Chul-Seung Kim , Young-Seop Han , Joon Kim
IPC分类号： H04N7/18 , H04N7/173
CPC分类号： H04N7/17318 , H04N21/2668 , H04N21/41407 , H04N21/4331 , H04N21/4622 , H04N21/47202 , H04N21/4722 , H04N21/4782 , H04N21/8126 , H04N21/8133
摘要： A system and method for Digital Living Network Alliance (DLNA) system is disclosed that provides data service of a digital broadcast. The DLNA system includes a digital media server for providing information about a broadcast A/V and data so as to handle a request for the data when a digital broadcast is requested, the digital media server receiving the digital broadcast and dividing the received digital broadcast into a broadcast A/V part and a data part so as to download the broadcast A/V part and the data part, respectively, and a digital media player for requesting the digital media server to transmit information about the digital broadcast, and to transmit data after receiving information about the broadcast A/V part and the data part from the digital media server, and for receiving and carrying out the requested data.
摘要翻译：公开了一种提供数字广播的数据服务的数字生活网络联盟（DLNA）系统和方法。 DLNA系统包括用于提供关于广播A / V和数据的信息的数字媒体服务器，以便在请求数字广播时处理对数据的请求，数字媒体服务器接收数字广播并将接收到的数字广播分成广播A / V部分和数据部分，以分别下载广播A / V部分和数据部分;以及数字媒体播放器，用于请求数字媒体服务器发送关于数字广播的信息，并且发送数据在从数字媒体服务器接收到关于广播A / V部分和数据部分的信息之后，接收和执行所请求的数据。

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