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1. 发明申请

US20090089501A1 METHOD OF PREFETCHING DATA IN HARD DISK DRIVE, RECORDING MEDIUM INCLUDING PROGRAM TO EXECUTE THE METHOD, AND APPARATUS TO PERFORM THE METHOD 有权
标题翻译：在硬盘驱动器中预先提供数据的方法，记录介质，包括程序执行方法，以及设备执行方法
公开(公告)号：US20090089501A1
公开(公告)日：2009-04-02
申请号：US12174661
申请日：2008-07-17
申请人： Seong-jun AHN , Hyung-gyu Lee , Jung-hwan Kim , Young-bong Kim , Sine Kim , Young-il Seo , Chan-ho Park
发明人： Seong-jun AHN , Hyung-gyu Lee , Jung-hwan Kim , Young-bong Kim , Sine Kim , Young-il Seo , Chan-ho Park
IPC分类号： G06F12/08
CPC分类号： G06F12/0862 , G06F12/0866 , G06F12/0897 , G06F2212/221 , G06F2212/222
摘要： A method of prefetching data in a hard disk drive includes searching for a logic block address (LBA) of data requested by an external apparatus in a history of a non-volatile cache of the hard disk drive, and if the LBA of the data is stored in the history, storing data recorded in a LBA stored after the LBA of the data requested by the external apparatus from among LBAs stored in the history in a buffer of the hard disk drive.
摘要翻译：在硬盘驱动器中预取数据的方法包括在硬盘驱动器的非易失性缓存的历史中搜索由外部设备请求的数据的逻辑块地址（LBA），并且如果数据的LBA为存储在历史中，将存储在由外部设备请求的数据的LBA之后存储的LBA中的数据从存储在历史中的LBA中存储在硬盘驱动器的缓冲器中。

2. 发明授权

US07979631B2 Method of prefetching data in hard disk drive, recording medium including program to execute the method, and apparatus to perform the method 有权
标题翻译：在硬盘驱动器中预取数据的方法，包括执行该方法的程序的记录介质以及执行该方法的装置
公开(公告)号：US07979631B2
公开(公告)日：2011-07-12
申请号：US12174661
申请日：2008-07-17
申请人： Seong-jun Ahn , Hyung-gyu Lee , Jung-hwan Kim , Young-bong Kim , Sine Kim , Young-il Seo , Chan-ho Park
发明人： Seong-jun Ahn , Hyung-gyu Lee , Jung-hwan Kim , Young-bong Kim , Sine Kim , Young-il Seo , Chan-ho Park
IPC分类号： G06F12/08
CPC分类号： G06F12/0862 , G06F12/0866 , G06F12/0897 , G06F2212/221 , G06F2212/222
摘要： A method of prefetching data in a hard disk drive includes searching for a logic block address (LBA) of data requested by an external apparatus in a history of a non-volatile cache of the hard disk drive, and if the LBA of the data is stored in the history, storing data recorded in a LBA stored after the LBA of the data requested by the external apparatus from among LBAs stored in the history in a buffer of the hard disk drive.
摘要翻译：在硬盘驱动器中预取数据的方法包括在硬盘驱动器的非易失性缓存的历史中搜索由外部设备请求的数据的逻辑块地址（LBA），并且如果数据的LBA为存储在历史中，将存储在由外部设备请求的数据的LBA之后存储的LBA中的数据从存储在历史中的LBA中存储在硬盘驱动器的缓冲器中。

3. 发明申请

US20090241001A1 RETRANSMISSION AND DELAYED ACK TIMER MANAGEMENT LOGIC FOR TCP PROTOCOL 失效
标题翻译： TCP协议的延迟和延迟确认定时器管理逻辑
公开(公告)号：US20090241001A1
公开(公告)日：2009-09-24
申请号：US11721213
申请日：2005-12-06
申请人： Chan-ho Park , Kyoung Park , Myung-Joon Kim
发明人： Chan-ho Park , Kyoung Park , Myung-Joon Kim
IPC分类号： H04L1/18 , G06F11/14
CPC分类号： H04L69/16 , H04L1/1854 , H04L1/188 , H04L47/10 , H04L47/193 , H04L47/323 , H04L69/12 , H04L69/161 , H04L69/163
摘要： Provided is an apparatus for detection timeout of each channel, which is a socket connection, in a Transmission Control Protocol (TCP) Offload Engine (TOE) using TCP accelerating hardware, and a method thereof. The timer managing apparatus of the TOE using the TCP accelerating hardware, including: a command register for receiving a command for a retransmission timer or a delayed ACK timer from an embedded processor of the TOE; a finite state machine (FSM) for storing information of a timer in operation by analyzing the command for the retransmission timer or the delayed ACK timer stored in the command register and controlling an entire operation of the timer managing apparatus; and a timeout checker for checking timeout of a timer in operation by using the stored timer information and notifying the timeout to the FSM.
摘要翻译：提供了一种使用TCP加速硬件的传输控制协议（TCP）卸载引擎（TOE）中的每个信道的检测超时的装置，其是套接字连接及其方法。使用TCP加速硬件的TOE的定时器管理装置，包括：从TOE的嵌入式处理器接收重发定时器的命令或延迟的ACK定时器的命令寄存器; 用于通过分析存储在命令寄存器中的重传定时器或延迟ACK定时器的命令来存储定时器的操作信息的有限状态机（FSM），并控制定时器管理装置的整个操作; 以及一个超时检查器，用于通过使用存储的定时器信息来检查正在运行的定时器的超时并通知超时给FSM。

4. 发明授权

US07129542B2 High voltage semiconductor device having high breakdown voltage and method of fabricating the same 有权
公开(公告)号：US07129542B2
公开(公告)日：2006-10-31
申请号：US10714607
申请日：2003-11-18
申请人： Chan-ho Park
发明人： Chan-ho Park
IPC分类号： H01L31/62 , H01L31/119
CPC分类号： H01L29/66295 , H01L29/0661 , H01L29/732
摘要： A high voltage semiconductor device, including: a high concentration collector area of a first conductive type; a low concentration collector area of a first conductive type formed on the high concentration collector area; a base area of a second conductive type formed on the low concentration collector area and having a trench perforating the low concentration collector area in a vertical direction at the edge of the trench; a high concentration emitter area of a first conductive type formed on a predetermined upper surface of the base area; and an emitter electrode, a base electrode, and a collector electrode isolated from one another and connected to the emitter area, the base area, and the collector area, respectively. High breakdown voltage can be obtained with a narrow junction termination area due to the trench.

5. 发明申请

US20100151296A1 ELECTRODE CATALYST FOR FUEL CELL AND FUEL CELL INCLUDING ELECTRODE HAVING ELECTRODE CATALYST 审中-公开
标题翻译：用于燃料电池和燃料电池的电极催化剂，包括具有电极催化剂的电极
公开(公告)号：US20100151296A1
公开(公告)日：2010-06-17
申请号：US12634043
申请日：2009-12-09
申请人： Kang Hee Lee , Kyung-jung Kwon , Chan-ho Park , Seon-ah Jin
发明人： Kang Hee Lee , Kyung-jung Kwon , Chan-ho Park , Seon-ah Jin
IPC分类号： H01M8/10 , H01M4/00 , H01M4/88
CPC分类号： H01M4/86 , H01M4/90 , H01M4/9083 , H01M4/921 , H01M4/926 , H01M8/1007
摘要： An electrode catalyst for a fuel cell and a fuel cell including an electrode having the electrode catalyst, include a non-platinum (Pt) catalyst, and a cerium (Ce) metal catalyst, both of which are supported on a carbon-based catalyst support having an improved catalytic activity at a decreased cost. The non-Pt catalyst may be at least one selected from the group consisting of Mn, Pd, Ir, Au, Cu, Co, Ni, Fe, Ru, WC, W, Mo, Se, any alloys thereof, and any mixtures thereof, and the Ce metal catalyst may be a Ce oxide.
摘要翻译：用于燃料电池的电极催化剂和包括具有电极催化剂的电极的燃料电池包括负载在碳基催化剂载体上的非铂（Pt）催化剂和铈（Ce）金属催化剂，以降低的成本具有改善的催化活性。非Pt催化剂可以是选自Mn，Pd，Ir，Au，Cu，Co，Ni，Fe，Ru，WC，W，Mo，Se中的至少一种，其任何合金及其任何混合物，Ce金属催化剂可以是Ce氧化物。

6. 发明申请

US20100018851A1 CARBON NANOTUBES FOR FUEL CELLS, METHOD FOR MANUFACTURING THE SAME, AND FUEL CELL USING THE SAME 有权
标题翻译：用于燃料电池的碳纳米管，其制造方法和使用该燃料电池的燃料电池
公开(公告)号：US20100018851A1
公开(公告)日：2010-01-28
申请号：US12511468
申请日：2009-07-29
申请人： Won-bong CHOI , Jae-uk Chu , Chan-ho Park , Hyuk Chang
发明人： Won-bong CHOI , Jae-uk Chu , Chan-ho Park , Hyuk Chang
IPC分类号： C01B31/02 , D01F9/12
CPC分类号： H01M4/8605 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01M4/9083 , H01M4/926 , H01M2008/1095 , Y10S977/70 , Y10S977/701 , Y10S977/72 , Y10S977/743 , Y10S977/843 , Y10S977/847
摘要： Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process. A fuel cell using as the carbon nanotubes for its electrode provides improved performance.
摘要翻译：提供了用于燃料电池的碳纳米管，其制造方法和使用该碳纳米管作为其电极的燃料电池。碳纳米管的内壁和外壁均匀掺杂有纳米尺寸的金属催化剂颗粒至0.3-5mg / cm2的程度。使用化学气相沉积或等离子体增强化学气相沉积在碳衬底上生长碳纳米管。由于碳纳米管具有大的比表面积，并且金属催化剂颗粒均匀地分布在其内壁和外壁上，所以当将碳纳米管用于燃料电池的电极时，电极中的反应效率最大。使用该方法制造的碳纳米管可以应用于形成大电极。生长在碳基板上的碳纳米管可以容易地应用于燃料电池的电极，提供经济的优点并简化整个电极的制造过程。使用作为其电极的碳纳米管的燃料电池提供改进的性能。

7. 发明授权

US06346444B1 Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof 有权
标题翻译：使用半绝缘多晶硅的功率半导体器件及其制造方法
公开(公告)号：US06346444B1
公开(公告)日：2002-02-12
申请号：US09653550
申请日：2000-08-31
申请人： Chan-ho Park , Jin-kyeong Kim , Jae-hong Park
发明人： Chan-ho Park , Jin-kyeong Kim , Jae-hong Park
IPC分类号： H01L21336
CPC分类号： H01L29/402 , H01L29/66136 , H01L29/66295 , H01L29/7322
摘要： A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.
摘要翻译：提供了具有改进的高击穿电压和提高的生产率的功率半导体器件及其制造方法。功率半导体包括形成在半导体衬底中的第一导电类型的集电极区域，形成在集电极区域中的第二导电类型的基极区域和形成在基极区域中的第一导电类型的发射极区域。形成与基部区域隔开预定距离的通道停止区域。分别在半导体衬底上沉积绝缘膜，半绝缘多晶硅（SIPOS）膜和分别图案化以暴露发射极区域，基极区域和沟道停止区域的氮化物膜。形成分别连接到基极区域，发射极区域和沟道停止区域的基极，发射极电极和等电位电极。

8. 发明授权

US09411491B2 Method for providing graphical user interface (GUI), and multimedia apparatus applying the same 有权
标题翻译：用于提供图形用户界面（GUI）的方法以及应用它的多媒体设备
公开(公告)号：US09411491B2
公开(公告)日：2016-08-09
申请号：US12173981
申请日：2008-07-16
申请人： Chan-ho Park , Kyoung-nyo Hwangbo , Mi-kyoung Kim
发明人： Chan-ho Park , Kyoung-nyo Hwangbo , Mi-kyoung Kim
IPC分类号： G06F3/048 , G06F3/0481 , G06F3/0484 , G06F3/0482 , G06F3/0485 , G11B27/10 , G11B27/34 , G06F3/0486 , G06F3/0488
CPC分类号： G06F3/04817 , G06F3/0482 , G06F3/0484 , G06F3/04842 , G06F3/04847 , G06F3/04855 , G06F3/0486 , G06F3/0488 , G11B27/105 , G11B27/34
摘要： A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.
摘要翻译：一种用于提供图形用户界面（GUI）以在触摸屏上接收用户命令的方法，以及使用其的多媒体设备。提供GUI的方法包括确定是否接收到用于GUI项目的放大命令，以及放大GUI项目。因此，能够使用户更正确地操作GUI项目，并且在GUI项目被操作时提供优异的视觉效果。

9. 发明授权

US06911715B2 Bipolar transistors and methods of manufacturing the same 有权
标题翻译：双极晶体管及其制造方法相同
公开(公告)号：US06911715B2
公开(公告)日：2005-06-28
申请号：US10655820
申请日：2003-09-05
申请人： Chan-ho Park , Jin-myung Kim , Kyeong-seok Park , Dong-ho Hyun
发明人： Chan-ho Park , Jin-myung Kim , Kyeong-seok Park , Dong-ho Hyun
IPC分类号： H01L21/331 , H01L27/082 , H01L29/08 , H01L29/73 , H01L29/732 , H01L31/0336
CPC分类号： H01L29/0821 , H01L29/73 , H01L29/732
摘要： A bipolar transistor in which the occurrence of Kirk effect is suppressed when a high current is injected into the bipolar transistor and a method of fabricating the bipolar transistor are described. The bipolar transistor includes a first collector region of a first conductive type having high impurity concentration, a second collector region of a first conductive type which has high impurity concentration and is formed on the first collector region, a base region of a second conductive type being formed a predetermined portion of the second collector region, and an emitter region of a first conductive type being formed in the base region. The bipolar transistor further includes the third collector region, which has higher impurity concentration than the second collector region, at the bottom of the base region. Therefore, it is possible to prevent the base region from extending toward the second collector region due to the third collector region when a high current is injected into the bipolar transistor, thereby improving the capability of driving a current of the bipolar transistor and preventing the occurrence of Kirk effect even during the injection of a high current.
摘要翻译：描述了当高电流注入双极晶体管时抑制Kirk效应的发生的双极晶体管和制造双极晶体管的方法。双极晶体管包括具有高杂质浓度的第一导电类型的第一集电极区域，具有高杂质浓度并形成在第一集电极区域上的第一导电类型的第二集电极区域，第二导电类型的基极区域是形成第二集电极区域的预定部分，并且在基极区域中形成第一导电类型的发射极区域。双极晶体管还包括在基极区底部具有比第二集电极区域更高的杂质浓度的第三集电极区域。因此，当高电流注入双极晶体管时，可以防止基极区域由于第三集电极区域而朝向第二集电极区域延伸，从而提高驱动双极晶体管的电流并防止发生的能力柯克效应甚至在注入高电流时。

10. 发明授权

US06281548B1 Power semiconductor device using semi-insulating polycrystalline silicon 有权
标题翻译：使用半绝缘多晶硅的功率半导体器件
公开(公告)号：US06281548B1
公开(公告)日：2001-08-28
申请号：US09247507
申请日：1999-02-10
申请人： Chan-ho Park , Jin-kyeong Kim , Jae-hong Park
发明人： Chan-ho Park , Jin-kyeong Kim , Jae-hong Park
IPC分类号： H01L21336
CPC分类号： H01L29/402 , H01L29/66136 , H01L29/66295 , H01L29/7322
摘要： A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.
摘要翻译：提供了具有改进的高击穿电压和提高的生产率的功率半导体器件及其制造方法。功率半导体包括形成在半导体衬底中的第一导电类型的集电极区域，形成在集电极区域中的第二导电类型的基极区域和形成在基极区域中的第一导电类型的发射极区域。形成与基部区域隔开预定距离的通道停止区域。分别在半导体衬底上沉积绝缘膜，半绝缘多晶硅（SIPOS）膜和分别图案化以暴露发射极区域，基极区域和沟道停止区域的氮化物膜。形成分别连接到基极区域，发射极区域和沟道停止区域的基极，发射极电极和等电位电极。

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