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1. 发明申请

US20050085021A1 Display device and a method for manufacturing the same 有权
公开(公告)号：US20050085021A1
公开(公告)日：2005-04-21
申请号：US10983683
申请日：2004-11-09
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.

2. 发明授权

US06716726B2 Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06716726B2
公开(公告)日：2004-04-06
申请号：US10277140
申请日：2002-10-22
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L2120
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： The present invention relates to a thin film transistor, in a low-temperature poly-Si thin film becoming an elemental material of the thin film transistor, an object of the invention is to provide the thin film transistor suitable for realizing an image display device having a high performance and a large area at low cost by realizing a poly-crystalline thin film having a crystal structure restraining current scattering in a grain boundary, lessening surface roughness, and capable of realizing high mobility even to a positive hole current. The object described above is achieved by realizing a TFT with high mobility by restraining a current scattering factor in a grain boundary of crystal with an introduction of Ge into the poly-crystalline Si thin film and with a difference in ratios of Ge compositions between an interior grain of crystal and a grain boundary of crystal resulted from a phase separation involved in crystallization, and by restraining surface roughness using a difference in volumes in a crystal.
摘要翻译：薄膜晶体管本发明涉及一种成为薄膜晶体管的元素材料的低温多晶硅薄膜中的薄膜晶体管，其目的在于提供一种薄膜晶体管，其适用于实现具有通过实现具有抑制晶界中的电流散射的晶体结构的多晶薄膜，降低表面粗糙度，并且即使对于空穴电流也能实现高迁移率，因此具有高性能和大面积的低成本。目的描述通过在晶体的晶界中抑制电流散射因子，通过在多晶Si薄膜中引入Ge并且在晶体的内部晶粒之间的Ge组成的比率的差异来实现具有高迁移率的TFT，并且晶体的晶界由结晶涉及的相分离产生，并且通过使用差异来抑制表面粗糙度在一个水晶体积。

3. 发明授权

US06713324B2 Display device and a method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US06713324B2
公开(公告)日：2004-03-30
申请号：US10187999
申请日：2002-07-03
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： H01L2100
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.
摘要翻译：一种图像显示装置，包括显示像素块和与其周边的电路块。每块具有由高性能薄膜晶体管制成的电路。显示像素块和包括显示装置的四个角的外围电路块形成在具有小电路占用表面积的电路内置型薄膜晶体管的图像显示装置基板上。在显示像素块和电路块的整个或部分表面上设置包括各向异性晶体生长并且在其纵向方向上与电流方向对齐的晶粒的多晶硅薄膜的薄膜晶体管的电路。纵向方向与块内的水平或垂直方向对准，并且在从相同的直线观察时，在水平和垂直方向上排列的块可以被布置成混合。

4. 发明申请

US20050095822A1 Thin-film semiconductor device, manufacturing method of the same and image display apparatus 失效
标题翻译：薄膜半导体器件及其制造方法以及图像显示装置
公开(公告)号：US20050095822A1
公开(公告)日：2005-05-05
申请号：US11004858
申请日：2004-12-07
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种形成薄膜半导体器件的方法，其中通过利用由于表面张力引起的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛区熔融的半导体，其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

5. 发明授权

US06501095B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06501095B2
公开(公告)日：2002-12-31
申请号：US09791827
申请日：2001-02-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba , Yoshinobu Kimura , Seong-Kee Park
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L2904
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/045 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： The present invention relates to a thin film transistor device, an object of the invention is to realize the thin film transistor device of high mobility by large-grain sizing (quasi single crystal) a low-temperature poly-Si thin film being an elemental material of the thin film transistor in a state trued up to a crystal orientation having the most stable lattice structure in consideration of strain at the interface with a substrate, and by controlling a crystal position. The object described above can be achieved by realizing a high mobility thin film transistor device in a manner forming a channel with crystal grains having large grain size and controlled crystal orientations by paying attention to a fact that a {110} surface of IV group crystal (crystal composed of either one or a mixed crystal of them selected from a group of C, Si, Ge, Sn, and Pb) has the smallest dangling bond density, by minimizing strain energy at the substrate interface, and by making crystal growth with selection of crystal orientations having growth lengths equivalent to channel lengths.
摘要翻译：本发明涉及一种薄膜晶体管器件，其目的是通过大晶粒尺寸（准单晶）实现高迁移率的薄膜晶体管器件，作为元素材料的低温多晶硅薄膜考虑到与衬底的界面处的应变，并且通过控制晶体位置，在处于具有最稳定的晶格结构的晶体取向的状态下的薄膜晶体管。通过实现高移动性可以实现上述目的薄膜晶体管器件以通过注意以下事实来形成具有大晶粒尺寸和晶体取向晶体的沟道的方式：注意以下事实：IV族晶体的{110}表面（由它们中的一种或其混晶构成的晶体被选择通过使基板界面处的应变能最小化，并且通过选择使晶体生长，从C，Si，Ge，Sn和Pb组中获得最小的悬空键密度具有等同于通道长度的生长长度的晶体取向。

6. 发明授权

US07193238B2 Display device and a method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07193238B2
公开(公告)日：2007-03-20
申请号：US10983683
申请日：2004-11-09
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： H01L29/04
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.
摘要翻译：一种图像显示装置，包括显示像素块和与其周边的电路块。每块具有由高性能薄膜晶体管制成的电路。显示像素块和包括显示装置的四个角的外围电路块形成在具有小电路占用表面积的电路内置型薄膜晶体管的图像显示装置基板上。在显示像素块和电路块的整个或部分表面上设置包括各向异性晶体生长并且在其纵向方向上与电流方向对齐的晶粒的多晶硅薄膜的薄膜晶体管的电路。纵向方向与块内的水平或垂直方向对准，并且在从相同的直线观察时，在水平和垂直方向上排列的块可以被布置成混合。

7. 发明授权

US06949419B2 Display device and a method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US06949419B2
公开(公告)日：2005-09-27
申请号：US10778082
申请日：2004-02-17
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.
摘要翻译：一种图像显示装置，包括显示像素块和与其周边的电路块。每块具有由高性能薄膜晶体管制成的电路。显示像素块和包括显示装置的四个角的外围电路块形成在具有小电路占用表面积的电路内置型薄膜晶体管的图像显示装置基板上。在显示像素块和电路块的整个或部分表面上设置包括各向异性晶体生长并且在其纵向方向上与电流方向对齐的晶粒的多晶硅薄膜的薄膜晶体管的电路。纵向方向与块内的水平或垂直方向对准，并且在从相同的直线观察时，在水平和垂直方向上排列的块可以被布置成混合。

8. 发明授权

US07084020B2 Manufacturing method of a thin-film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US07084020B2
公开(公告)日：2006-08-01
申请号：US11004858
申请日：2004-12-07
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/00
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种形成薄膜半导体器件的方法，其中通过利用由于表面张力引起的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛区熔融的半导体，其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

9. 发明授权

US06847069B2 Thin-film semiconductor device, manufacturing method of the same and image display apparatus 失效
标题翻译：薄膜半导体器件及其制造方法以及图像显示装置
公开(公告)号：US06847069B2
公开(公告)日：2005-01-25
申请号：US10372809
申请日：2003-02-26
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01I27/148 , H01L29/768
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种薄膜半导体器件，其中通过利用熔融半导体的表面张力的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛状区域其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

10. 发明授权

US06690064B2 Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06690064B2
公开(公告)日：2004-02-10
申请号：US10274995
申请日：2002-10-22
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L21331
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： A thin film transistor is provided containing polycrystalline Si—Ge alloy. A high performance TFT may be provided having crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. An image display device may be realized having a high performance and a large area at a low cost.
摘要翻译：提供含有多晶Si-Ge合金的薄膜晶体管。可以提供具有通过在Si中引入Ge来抑制晶界中的电流散射和表面粗糙度的晶体结构的高性能TFT。可以以低成本实现具有高性能和大面积的图像显示装置。

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