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1. 发明申请

US20060133174A1 Phase-change RAM containing AIN thermal dissipation layer and TiN electrode 有权
标题翻译：相变RAM包含AIN散热层和TiN电极
公开(公告)号：US20060133174A1
公开(公告)日：2006-06-22
申请号：US11270711
申请日：2005-11-08
申请人： Seong-Il Kim , Yong-Tae Kim , Young-Hwan Kim , Chun-Keun Kim , Min-Soo Youm
发明人： Seong-Il Kim , Yong-Tae Kim , Young-Hwan Kim , Chun-Keun Kim , Min-Soo Youm
IPC分类号： G11C7/00
CPC分类号： H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/1675
摘要： Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.
摘要翻译：提供了一种包含基板，下电极，相变材料，上电极和散热层的相变RAM，其中散热层包含具有高导热性的氮化铝散热层，以及下电极含有氮化钛电极，其产生使用少量电流产生的大量热量并且具有低导热性，由此在相变材料和电极之间产生的热量不会转移到器件，但是快速消散到其外部，以便能够使用低电流的高速操作并且提高器件的可靠性。

2. 发明授权

US07307269B2 Phase-change RAM containing AIN thermal dissipation layer and TiN electrode 有权
标题翻译：相变RAM包含AIN散热层和TiN电极
公开(公告)号：US07307269B2
公开(公告)日：2007-12-11
申请号：US11270711
申请日：2005-11-08
申请人： Seong-Il Kim , Yong-Tae Kim , Young-Hwan Kim , Chun-Keun Kim , Min-Soo Youm
发明人： Seong-Il Kim , Yong-Tae Kim , Young-Hwan Kim , Chun-Keun Kim , Min-Soo Youm
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/1675
摘要： Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.
摘要翻译：提供了一种包含基板，下电极，相变材料，上电极和散热层的相变RAM，其中散热层包含具有高导热性的氮化铝散热层，以及下电极含有氮化钛电极，其产生使用少量电流产生的大量热量并且具有低导热性，由此在相变材料和电极之间产生的热量不会转移到器件，但是快速消散到其外部，以便能够使用低电流的高速操作并且提高器件的可靠性。

3. 发明申请

US20050142667A1 Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity 有权
标题翻译：使用高蚀刻选择性的缓冲层的自对准铁电栅极晶体管的制造方法
公开(公告)号：US20050142667A1
公开(公告)日：2005-06-30
申请号：US10922949
申请日：2004-08-23
申请人： Yong-Tae Kim , Seong-Il Kim , Chun-Keun Kim , Sun-Il Shim
发明人： Yong-Tae Kim , Seong-Il Kim , Chun-Keun Kim , Sun-Il Shim
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/265 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8246 , H01L27/105 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/6684 , H01L21/2652 , H01L21/28291 , H01L29/66575
摘要： A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a source and a drain will be formed and then stopped at the buffer layer, thereby fabricating a self-aligned ferroelectric gate transistor without damage to the silicon thin film, and thus, an integration degree of a chip can be improved.
摘要翻译：公开了使用具有高蚀刻选择性的缓冲层的自对准铁电栅极晶体管的制造方法。在硅衬底和铁电体层之间形成具有高蚀刻选择性的缓冲层的堆叠结构，并且对形成源极和漏极的部分进行蚀刻，然后在缓冲层处停止，自对准的铁电栅极晶体管，而不损坏硅薄膜，从而可以提高芯片的集成度。

4. 发明授权

US07151001B2 Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity 有权
标题翻译：使用高蚀刻选择性的缓冲层的自对准铁电栅极晶体管的制造方法
公开(公告)号：US07151001B2
公开(公告)日：2006-12-19
申请号：US10922949
申请日：2004-08-23
申请人： Yong-Tae Kim , Seong-Il Kim , Chun-Keun Kim , Sun-Il Shim
发明人： Yong-Tae Kim , Seong-Il Kim , Chun-Keun Kim , Sun-Il Shim
IPC分类号： H01L21/00
CPC分类号： H01L29/6684 , H01L21/2652 , H01L21/28291 , H01L29/66575
摘要： A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a source and a drain will be formed and then stopped at the buffer layer, thereby fabricating a self-aligned ferroelectric gate transistor without damage to the silicon thin film, and thus, an integration degree of a chip can be improved.
摘要翻译：公开了使用具有高蚀刻选择性的缓冲层的自对准铁电栅极晶体管的制造方法。在硅衬底和铁电体层之间形成具有高蚀刻选择性的缓冲层的堆叠结构，并且对形成源极和漏极的部分进行蚀刻，然后在缓冲层处停止，自对准的铁电栅极晶体管，而不损坏硅薄膜，从而可以提高芯片的集成度。

5. 发明授权

US09111506B2 Display device having a gate driver responsive to multiple scan start signals 有权
标题翻译：具有响应于多个扫描开始信号的栅极驱动器的显示装置
公开(公告)号：US09111506B2
公开(公告)日：2015-08-18
申请号：US13208531
申请日：2011-08-12
申请人： Myung-Ho Won , Min-Sik Um , Seong-Il Kim , Sang-Won Lee , Tae-Seok Ha , Hyo-Sun Kim
发明人： Myung-Ho Won , Min-Sik Um , Seong-Il Kim , Sang-Won Lee , Tae-Seok Ha , Hyo-Sun Kim
IPC分类号： G09G3/36 , H04N13/04
CPC分类号： G09G3/3674 , G09G2310/0267 , G09G2310/0286 , G09G2310/061 , G09G2310/08 , G09G2320/0209 , H04N13/341 , H04N13/356
摘要： A display device includes a plurality of pixels arranged in matrix, a plurality of gate lines, a plurality of data lines, and a gate driver connected to the plurality of gate lines. The gate driver receives a first scan start signal, a second scan start signal and clock signals and outputs a gate-on voltage to each of the plurality of gate lines. The gate driver outputs the gate-on voltage to the plurality of gate lines such that the gate-on voltages do not overlap with each other when the gate driver receives the first scan start signal. The gate driver outputs the gate-on voltage to at least two of the gate lines at substantially the same time when the gate driver receives the second scan start signal.
摘要翻译：显示装置包括以矩阵形式排列的多个像素，多条栅极线，多条数据线以及连接到多条栅极线的栅极驱动器。栅极驱动器接收第一扫描开始信号，第二扫描开始信号和时钟信号，并且对多个栅极线中的每一个输出栅极导通电压。栅极驱动器将栅极导通电压输出到多条栅极线，使得当栅极驱动器接收到第一扫描开始信号时，栅极导通电压彼此不重叠。栅极驱动器在栅极驱动器接收到第二扫描开始信号的同时基本上同时向至少两条栅极线输出栅极导通电压。

6. 发明授权

US5865888A Semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 失效
标题翻译：半导体器件外延层横向生长速率控制方法采用CBr4
公开(公告)号：US5865888A
公开(公告)日：1999-02-02
申请号：US684721
申请日：1996-07-22
申请人： Suk-Ki Min , Moo sung Kim , Seong-Il Kim
发明人： Suk-Ki Min , Moo sung Kim , Seong-Il Kim
IPC分类号： C23C16/44 , C23C16/455 , C30B25/02 , H01L21/20 , H01L21/205 , C30B1/00
CPC分类号： C30B25/02 , C30B29/42 , H01L21/02395 , H01L21/0243 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L21/02636 , Y10S117/913
摘要： A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.
摘要翻译：使用CBr4气体的半导体器件外延层横向生长速率控制方法涉及通过借助于金属有机化学蒸气在图案化的GaAs衬底上发生的外延层生长期间根据掺杂到外延层中的CBr 4量调节外延层横向生长速率沉积（MOCVD）工艺。横向生长速率可以通过改变生长温度和V / III掺杂比来调节。

7. 发明授权

US08296994B2 Film sheet for area focusing of sun light and greenhouse provided with the same 有权
标题翻译：提供太阳光和温室区域聚焦的电影片
公开(公告)号：US08296994B2
公开(公告)日：2012-10-30
申请号：US12962724
申请日：2010-12-08
申请人： Seong-Il Kim , Won-Jun Choi , Il-Ki Han , Jung-Il Lee
发明人： Seong-Il Kim , Won-Jun Choi , Il-Ki Han , Jung-Il Lee
IPC分类号： A01G9/24
CPC分类号： A01G9/243 , A01G9/1438 , F24S23/31 , G02B5/045 , Y02A40/252 , Y02A40/266 , Y02E10/43 , Y02P60/124
摘要： A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.
摘要翻译：提供了一种用于阳光区域聚焦的薄膜片和设有该阳光的温室。膜片包括i）具有矩形形状的膜，以及ii）形成在膜的一个表面上以在一个方向上延伸的多个棱镜组件。所述多个棱镜组件中的至少一个棱镜组件包括：i）至少一个第一棱镜单元，其包括具有彼此基本相同的倾斜角度的多个第一棱镜，以及ii）与第一棱镜单元相邻的至少一个第二棱镜单元棱镜单元，并且包括具有彼此基本相同的倾斜角度的多个第二棱镜。第一棱镜单元的宽度与第二棱镜单元的宽度基本相同，并且多个第一棱镜中的一个第一棱镜的倾斜角度与多个第二棱镜中的一个第二棱镜的倾斜角度不同，并且进入棱镜组件的光被配置为区域聚焦。

8. 发明授权

US08130041B2 Power amplifier device 有权
标题翻译：功率放大器装置
公开(公告)号：US08130041B2
公开(公告)日：2012-03-06
申请号：US12960153
申请日：2010-12-03
申请人： Seong-Il Kim , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
发明人： Seong-Il Kim , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0261 , H03F1/52 , H03F3/19 , H03F3/211 , H03F2200/18 , H03F2200/451
摘要： Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.
摘要翻译：提供了一种功率放大器装置。功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传送的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器，多个晶体管。

9. 发明授权

US07484103B2 Method and system for the information protection of digital content 有权
标题翻译：数字内容信息保护方法与系统
公开(公告)号：US07484103B2
公开(公告)日：2009-01-27
申请号：US10501254
申请日：2003-01-10
申请人： Je-Hak Woo , Hwan-Chul Lee , Sang-Young Cho , Seong-Ho Jeong , Young-Soo Ha , Seog-Kyoon Shin , Seong-Il Kim
发明人： Je-Hak Woo , Hwan-Chul Lee , Sang-Young Cho , Seong-Ho Jeong , Young-Soo Ha , Seog-Kyoon Shin , Seong-Il Kim
IPC分类号： G06F11/30
CPC分类号： G06F21/10
摘要： The present invention relates to the information protection of digital content transferred by streaming and download service through wire or wireless Internet network. The information protection system in this invention suggests a drastic prevention method of copyrights infringement such as illegal copy and unauthorized distribution of digital content, by using of the encryption, decryption, distribution, and authentication technologies. This invention suggests the control technology of general viewer program, not the specific viewer program for information protection, using a network filter driver for streaming and file system filter driver for download service. The main function of network and file system filter driver is the filtering operation such as a hooking, changing, decrypting, and restoring of message and data packet, and transferring to the viewer program. The main idea and technology of this invention suggest higher secure and efficient digital information protection system for live/VOD/HTTP streaming and download service.
摘要翻译：本发明涉及通过有线或无线因特网网络流式传输和下载服务传输的数字内容的信息保护。本发明的信息保护系统通过使用加密，解密，分发和认证技术，提出了非法复制和非法分发数字内容等版权侵权的大力预防方法。本发明提出了一般观看者节目的控制技术，而不是用于信息保护的特定观看者节目，使用用于流媒体的网络过滤器驱动程序和用于下载服务的文件系统过滤驱动器。网络和文件系统过滤驱动的主要功能是消息和数据包的挂接，更改，解密和恢复等过滤操作，并传送给观众节目。本发明的主要思想和技术提出了用于实时/ VOD / HTTP流和下载服务的更安全高效的数字信息保护系统。

10. 发明授权

US08124489B2 Monolithic microwave integrated circuit device and method of forming the same 失效
标题翻译：单片微波集成电路器件及其形成方法
公开(公告)号：US08124489B2
公开(公告)日：2012-02-28
申请号：US12832432
申请日：2010-07-08
申请人： Byoung-Gue Min , Jongmin Lee , Seong-Il Kim , Hyung Sup Yoon
发明人： Byoung-Gue Min , Jongmin Lee , Seong-Il Kim , Hyung Sup Yoon
IPC分类号： H01L21/331
CPC分类号： H01L29/66318 , H01L21/8252 , H01L27/0605 , H01L29/66204 , H01L29/7371 , H01L29/868
摘要： Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.
摘要翻译：提供了一种单片微波集成电路器件及其形成方法。该方法包括：在基底的异质结双极晶体管（HBT）区域和PIN二极管区域上形成子集电极层，集电极层，基极层，发射极层和发射极盖层; 在HBT区域中形成发射极图案和发射极盖图案，并通过图案化发射极层和发射极盖层而使基底层曝光; 并且通过用第一类型杂质掺杂PIN二极管区域的集电极层的一部分来形成本征区域，PIN二极管区域与HBT区域间隔开。

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