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1. 发明授权

US08711618B2 Method for programming non-volatile memory device and apparatuses performing the method 有权
标题翻译：用于编程执行该方法的非易失性存储器件和装置的方法
公开(公告)号：US08711618B2
公开(公告)日：2014-04-29
申请号：US13190913
申请日：2011-07-26
申请人： Seong Hyeog Choi , Hong Rak Son , Jun Jin Kong , Yong June Kim
发明人： Seong Hyeog Choi , Hong Rak Son , Jun Jin Kong , Yong June Kim
IPC分类号： G11C7/10
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/10
摘要： A method of programming multi-level cells included in a spare region, the method including programming first page data and at least one first dummy data in a first multi-level cell; and programming second page data and at least one second dummy data in a second multi-level cell.
摘要翻译：一种对包含在备用区域中的多级单元进行编程的方法，所述方法包括在第一多级单元中编程第一页数据和至少一个第一虚拟数据; 以及在第二多级单元中编程第二页数据和至少一个第二伪数据。

2. 发明申请

US20120020156A1 METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE AND APPARATUSES PERFORMING THE METHOD 有权
标题翻译：编程非易失性存储器件的方法及其方法
公开(公告)号：US20120020156A1
公开(公告)日：2012-01-26
申请号：US13190913
申请日：2011-07-26
申请人： Seong Hyeog Choi , Hong Rak Son , Jun Jin Kong , Yong June Kim
发明人： Seong Hyeog Choi , Hong Rak Son , Jun Jin Kong , Yong June Kim
IPC分类号： G11C16/10
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/10
摘要： A method of programming multi-level cells included in a spare region, the method including programming first page data and at least one first dummy data in a first multi-level cell; and programming second page data and at least one second dummy data in a second multi-level cell.
摘要翻译：一种对包含在备用区域中的多级单元进行编程的方法，所述方法包括在第一多级单元中编程第一页数据和至少一个第一虚拟数据; 以及在第二多级单元中编程第二页数据和至少一个第二伪数据。

3. 发明授权

US09495518B2 Method of reliably reading data stored in multi-level cell (MLC) non-volatile memory 有权
标题翻译：可靠地读取存储在多级单元（MLC）非易失性存储器中的数据的方法
公开(公告)号：US09495518B2
公开(公告)日：2016-11-15
申请号：US13407333
申请日：2012-02-28
申请人： Yong June Kim , Hong Rak Son , Jae Hong Kim , Sang Yong Yoon , Ki Jun Lee , Jung Soo Chung , Seong Hyeog Choi
发明人： Yong June Kim , Hong Rak Son , Jae Hong Kim , Sang Yong Yoon , Ki Jun Lee , Jung Soo Chung , Seong Hyeog Choi
IPC分类号： G06F12/00 , G06F21/00 , G06F12/14 , G11C11/00 , G11C11/56 , G11C16/26 , G11C16/34 , G06F11/10
CPC分类号： G06F21/00 , G06F11/1012 , G06F11/108 , G06F12/00 , G06F12/14 , G11C11/00 , G11C11/5642 , G11C16/26 , G11C16/3418
摘要： An apparatus and a method for reading from a non-volatile memory whereby soft decision data is used to determine the reliability of hard decision data. The hard decision data read from the non-volatile memory is de-randomized and the soft decision data read from the non-volatile memory is not de-randomized. Using the soft decision data, the hard decision data is decoded.
摘要翻译：一种用于从非易失性存储器读取的装置和方法，由此使用软判决数据来确定硬判决数据的可靠性。从非易失性存储器读取的硬判决数据被去随机化，并且从非易失性存储器读取的软判决数据不被去随机化。使用软判决数据，硬判决数据被解码。

4. 发明授权

US09009390B2 Method for changing read parameter for improving read performance and apparatuses using the same 有权
标题翻译：用于改变读取参数以提高读取性能的方法和使用其的装置
公开(公告)号：US09009390B2
公开(公告)日：2015-04-14
申请号：US13238749
申请日：2011-09-21
申请人： Seong Hyeog Choi , Hong Rak Son , Kyoung Lae Cho , Jun Jin Kong , Sang Hoon Lee
发明人： Seong Hyeog Choi , Hong Rak Son , Kyoung Lae Cho , Jun Jin Kong , Sang Hoon Lee
IPC分类号： G06F13/00 , G06F13/28 , G11C16/02 , G11C16/06 , G11C29/42 , G11C16/00 , G11C11/56 , G11C16/34
CPC分类号： G11C16/02 , G06F13/00 , G11C11/5642 , G11C16/00 , G11C16/06 , G11C16/3418 , G11C16/349 , G11C29/42
摘要： A memory system including a non-volatile memory device and a memory controller is provided. When a read operation on a first data initially output from the non-volatile memory device during a first read operation is successful, the memory controller may change a read voltage for reading a second data stored in the non-volatile memory device during a second read operation.
摘要翻译：提供了包括非易失性存储器件和存储器控制器的存储器系统。当在第一次读取操作期间最初从非易失性存储器件输出的第一数据的读取操作成功时，存储器控制器可以在第二次读取期间改变用于读取存储在非易失性存储器件中的第二数据的读取电压操作。

5. 发明授权

US09864544B2 Methods of operating memory systems for sub-block erase operation 有权
公开(公告)号：US09864544B2
公开(公告)日：2018-01-09
申请号：US15001275
申请日：2016-01-20
申请人： Eun Chu Oh , Hong Rak Son , Jun Jin Kong , Seong Hyeog Choi
发明人： Eun Chu Oh , Hong Rak Son , Jun Jin Kong , Seong Hyeog Choi
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28 , G06F3/06
CPC分类号： G06F3/0652 , G06F3/0614 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0673 , G06F3/0679 , G06F3/0688
摘要： A method of operating a memory system including memory blocks, each including memory cells and divided into at least first and second sub-blocks. The method includes performing a program operation on memory cells connected to at least one word line of the first and second sub-blocks using a first program method of programming data having a first number of bits, performing an erase operation on the first sub-block, and detecting a state of distribution of threshold voltages of memory cells of the first and second sub-blocks, and determining whether a program operation is to be performed on memory cells connected to a second adjacent word line including at least one word line adjacent to the first sub-block, out of the memory cells of the second sub-block, by using a second program method of programming data having a second number of bits, based on the detecting.

6. 发明授权

US08635509B2 Method of operating memory controller and memory system including the memory controller 失效
标题翻译：操作存储器控制器和存储器系统的方法，包括存储器控制器
公开(公告)号：US08635509B2
公开(公告)日：2014-01-21
申请号：US13612074
申请日：2012-09-12
申请人： Seong Hyeog Choi , Jun Jin Kong , Hong Rak Son
发明人： Seong Hyeog Choi , Jun Jin Kong , Hong Rak Son
IPC分类号： G11C29/00 , H03M13/00
CPC分类号： G06F11/1072 , G06F11/108 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： According to example embodiments, a method of controlling a memory controller includes executing an error correction code (ECC) on first page data that has been read from a non-volatile memory device using a first read voltage level, estimating a second read voltage level for reading the first page data using metadata of second page data when an uncorrectable error is detected in the first page data according to a result of executing the ECC.
摘要翻译：根据示例实施例，一种控制存储器控制器的方法包括：对使用第一读取电压电平从非易失性存储器件读取的第一页数据执行纠错码（ECC），估计第二读取电压电平根据执行ECC的结果在第一页数据中检测到不可校正的错误时，使用第二页数据的元数据读取第一页数据。

7. 发明申请

US20110289278A1 METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM 失效
标题翻译：对存储器件的读取电平进行估计的方法，其存储器控制器和记录介质
公开(公告)号：US20110289278A1
公开(公告)日：2011-11-24
申请号：US13114337
申请日：2011-05-24
申请人： Hee Seok EUN , Hong Rak Son , Jong Ha Kim , Young June Kim , Seong Hyeog Choi
发明人： Hee Seok EUN , Hong Rak Son , Jong Ha Kim , Young June Kim , Seong Hyeog Choi
IPC分类号： G06F12/08
CPC分类号： G11C11/5642 , G06F12/0246 , G06F2212/7209 , G11C16/3404 , G11C16/349
摘要： A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.
摘要翻译：一种估计存储器件的读取电平的方法包括：计算对应于关于要编程的数据中具有特定逻辑电平的单元的数量的信息中的至少一个的信息的第一信息以及关于具有特定单元状态的单元的数量的信息，以及在程序操作期间存储第一信息; 基于已经设置的阈值水平读取数据，并且相对于读取的数据计算关于由阈值水平定义的至少一个状态中的单元数量的第二信息; 使用基于所述第一信息的概率来计算与所述第二信息对应的所述至少一个状态下的小区的数量的第三信息; 将第二信息与第三信息进行比较; 以及根据比较结果确定是否改变阈值水平。

8. 发明授权

US08516183B2 Method of estimating read level for a memory device, memory controller therefor, and recording medium 失效
标题翻译：用于估计存储器件，其存储器控制器和记录介质的读取电平的方法
公开(公告)号：US08516183B2
公开(公告)日：2013-08-20
申请号：US13114337
申请日：2011-05-24
申请人： Hee Seok Eun , Hong Rak Son , Jong Ha Kim , Young June Kim , Seong Hyeog Choi
发明人： Hee Seok Eun , Hong Rak Son , Jong Ha Kim , Young June Kim , Seong Hyeog Choi
IPC分类号： G06F12/00
CPC分类号： G11C11/5642 , G06F12/0246 , G06F2212/7209 , G11C16/3404 , G11C16/349
摘要： A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.
摘要翻译：一种估计存储器件的读取电平的方法包括：计算对应于关于要编程的数据中具有特定逻辑电平的单元的数量的信息中的至少一个的信息的第一信息以及关于具有特定单元状态的单元的数量的信息，以及在程序操作期间存储第一信息; 基于已经设置的阈值水平读取数据，并且相对于读取的数据计算关于由阈值水平定义的至少一个状态中的单元数量的第二信息; 使用基于所述第一信息的概率来计算与所述第二信息对应的所述至少一个状态下的小区的数量的第三信息; 将第二信息与第三信息进行比较; 以及根据比较结果确定是否改变阈值水平。

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